WO1994029493A3 - Recubrimientos ceramicos producidos mediante lampara excimera de descarga silenciosa - Google Patents
Recubrimientos ceramicos producidos mediante lampara excimera de descarga silenciosa Download PDFInfo
- Publication number
- WO1994029493A3 WO1994029493A3 PCT/ES1994/000058 ES9400058W WO9429493A3 WO 1994029493 A3 WO1994029493 A3 WO 1994029493A3 ES 9400058 W ES9400058 W ES 9400058W WO 9429493 A3 WO9429493 A3 WO 9429493A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ceramic coatings
- excimer lamp
- coatings produced
- silent discharge
- discharge excimer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Recubrimientos cerámicos dentro del sistema Si-O-N-C, pueden ser aplicados sobre diferentes materiales y componentes por medio de un método basado en la Deposición Química a partir de Vapor inducida por Lámpara (Lamp-CVD). La flexibilidad de este método permite controlar las propiedades físico-químicas de los recubrimientos, siendo de especial aplicación en los campos de la microelectrónica, optoelectrónica, células solares y protección de materiales.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES9301284A ES2067410B1 (es) | 1993-06-10 | 1993-06-10 | Recubrimientos de nitruro de silicio producidos mediante lampara excimera de descarga silenciosa. |
ESP9301284 | 1993-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1994029493A2 WO1994029493A2 (es) | 1994-12-22 |
WO1994029493A3 true WO1994029493A3 (es) | 1995-02-09 |
Family
ID=8282143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/ES1994/000058 WO1994029493A2 (es) | 1993-06-10 | 1994-06-09 | Recubrimientos ceramicos producidos mediante lampara excimera de descarga silenciosa |
Country Status (2)
Country | Link |
---|---|
ES (1) | ES2067410B1 (es) |
WO (1) | WO1994029493A2 (es) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200424343A (en) * | 2002-09-05 | 2004-11-16 | Asml Us Inc | Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631199A (en) * | 1985-07-22 | 1986-12-23 | Hughes Aircraft Company | Photochemical vapor deposition process for depositing oxide layers |
JPS6274084A (ja) * | 1985-09-27 | 1987-04-04 | Sanyo Electric Co Ltd | 周期構造膜の製造方法 |
EP0402798A2 (de) * | 1989-06-15 | 1990-12-19 | Heraeus Noblelight GmbH | Beschichtungsvorrichtung |
EP0421834A1 (fr) * | 1989-09-14 | 1991-04-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Procédé pour la réalisation d'un dépot d'un revêtement protecteur inorganique et amorphe sur un substrat polymérique organique |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0174743A3 (en) * | 1984-09-05 | 1988-06-08 | Morton Thiokol, Inc. | Process for transition metal nitrides thin film deposition |
US4910043A (en) * | 1987-07-16 | 1990-03-20 | Texas Instruments Incorporated | Processing apparatus and method |
JP2637265B2 (ja) * | 1990-06-28 | 1997-08-06 | 株式会社東芝 | 窒化珪素膜の形成方法 |
-
1993
- 1993-06-10 ES ES9301284A patent/ES2067410B1/es not_active Expired - Fee Related
-
1994
- 1994-06-09 WO PCT/ES1994/000058 patent/WO1994029493A2/es active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631199A (en) * | 1985-07-22 | 1986-12-23 | Hughes Aircraft Company | Photochemical vapor deposition process for depositing oxide layers |
JPS6274084A (ja) * | 1985-09-27 | 1987-04-04 | Sanyo Electric Co Ltd | 周期構造膜の製造方法 |
EP0402798A2 (de) * | 1989-06-15 | 1990-12-19 | Heraeus Noblelight GmbH | Beschichtungsvorrichtung |
EP0421834A1 (fr) * | 1989-09-14 | 1991-04-10 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Procédé pour la réalisation d'un dépot d'un revêtement protecteur inorganique et amorphe sur un substrat polymérique organique |
Non-Patent Citations (5)
Title |
---|
BERGONZO P ET AL: "Development of a novel large area excimer lamp for direct photodeposition of thin films", LASER SURFACE PROCESSING AND CHARACTERIZATION. SYMPOSIUM E OF THE 1991 E-MRS SPRING CONFERENCE, STRASBOURG, FRANCE, 28-31 MAY 1991, ISSN 0169-4332, APPLIED SURFACE SCIENCE, JAN. 1992, NETHERLANDS, PAGE(S) 424 - 429 * |
BERGONZO P ET AL: "Direct photolamp-deposition of silicon dioxide films using a xenon excimer lamp", LASER, LAMP AND SYNCHROTRON ASSISTED MATERIALS SURFACE PROCESSING: SYMPOSIUM B OF THE E-MRS SPRING CONFERENCE, STRASBOURG, FRANCE, 2-5 JUNE 1992, ISSN 0169-4332, APPLIED SURFACE SCIENCE, MAY 1993, NETHERLANDS, PAGE(S) 393 - 397 * |
HANABUSA M: "Photoinduced deposition of thin films", MATERIAL SCIENCE REPORTS, MAY 1987, NETHERLANDS, VOL. 2, NR. 2, PAGE(S) 51 - 98, ISSN 0920-2307 * |
KOGELSCHATZ U: "Silent-discharge driven excimer UV sources and their applications", LASER SURFACE PROCESSING AND CHARACTERIZATION. SYMPOSIUM E OF THE 1991 E-MRS SPRING CONFERENCE, STRASBOURG, FRANCE, 28-31 MAY 1991, ISSN 0169-4332, APPLIED SURFACE SCIENCE, JAN. 1992, NETHERLANDS, PAGE(S) 410 - 423 * |
PATENT ABSTRACTS OF JAPAN vol. 011, no. 273 (C - 445) 4 September 1987 (1987-09-04) * |
Also Published As
Publication number | Publication date |
---|---|
ES2067410B1 (es) | 1995-11-01 |
WO1994029493A2 (es) | 1994-12-22 |
ES2067410A1 (es) | 1995-03-16 |
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