ES2062713T3 - Instalacion de pulverizacion catodica de indice elevado. - Google Patents

Instalacion de pulverizacion catodica de indice elevado.

Info

Publication number
ES2062713T3
ES2062713T3 ES91401433T ES91401433T ES2062713T3 ES 2062713 T3 ES2062713 T3 ES 2062713T3 ES 91401433 T ES91401433 T ES 91401433T ES 91401433 T ES91401433 T ES 91401433T ES 2062713 T3 ES2062713 T3 ES 2062713T3
Authority
ES
Spain
Prior art keywords
high index
formation
favors
spray installation
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
ES91401433T
Other languages
English (en)
Inventor
Roland Devigne
Jean-Pierre Beaufays
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Saint Gobain Vitrage SA
Original Assignee
Saint Gobain Vitrage SA
Saint Gobain Vitrage International SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Vitrage SA, Saint Gobain Vitrage International SA filed Critical Saint Gobain Vitrage SA
Application granted granted Critical
Publication of ES2062713T3 publication Critical patent/ES2062713T3/es
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

LA INVENCION SE REFIERE A UNA INSTALACION DE REVESTIMIENTO DE SUSTRATOS POR PULVERIZACION EN VACIO. EL CATODO DE ESTA INSTALACION COMPRENDE EN PARTICULAR UN PAR DE ELECTRODOS (21) DISPUESTOS A LA ALTURA DEL SUSTRATO Y PIEZAS POLARES ASIMETRICAS (8, 9), CUYA CONFIGURACION FAVORECE LA EYECCION CONTROLADA DE ELECTRONES ENERGETICOS EN DIRECCION DE LOS SUSTRATOS (11), LO QUE FAVORECE LA CALIDAD DEL DEPOSITO, Y MAS ESPECIALMENTE LA FORMACION DE COMPUESTOS CUANDO SE TRABAJA EN ATMOSFERA REACTIVA. LA INVENCION SE ADAPTA MAS ESPECIALMENTE A LA FORMACION DE CAPAS FINAS DE SUSTANCIAS COMPUESTAS SOBRE SUSTRATOS DE GRANDES DIMENSIONES, TALES COMO LAMINAS DE VIDRIO.
ES91401433T 1990-06-08 1991-06-03 Instalacion de pulverizacion catodica de indice elevado. Expired - Fee Related ES2062713T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
BE9000576A BE1004442A3 (fr) 1990-06-08 1990-06-08 Installation de pulverisation cathodique a taux eleve.

Publications (1)

Publication Number Publication Date
ES2062713T3 true ES2062713T3 (es) 1994-12-16

Family

ID=3884816

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91401433T Expired - Fee Related ES2062713T3 (es) 1990-06-08 1991-06-03 Instalacion de pulverizacion catodica de indice elevado.

Country Status (4)

Country Link
EP (1) EP0461014B1 (es)
BE (1) BE1004442A3 (es)
DE (1) DE69103478T2 (es)
ES (1) ES2062713T3 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5873989A (en) * 1997-02-06 1999-02-23 Intevac, Inc. Methods and apparatus for linear scan magnetron sputtering
DE19705884A1 (de) * 1997-02-15 1998-08-20 Leybold Ag Plasma-Zündvorrichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155825A (en) * 1977-05-02 1979-05-22 Fournier Paul R Integrated sputtering apparatus and method
WO1985002418A1 (en) * 1983-12-01 1985-06-06 Shatterproof Glass Corporation Gas distribution system for sputtering cathodes
GB2209769A (en) * 1987-09-16 1989-05-24 Ion Tech Ltd Sputter coating
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
DE3834318A1 (de) * 1988-10-08 1990-04-12 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe

Also Published As

Publication number Publication date
EP0461014B1 (fr) 1994-08-17
DE69103478T2 (de) 1995-03-23
DE69103478D1 (de) 1994-09-22
BE1004442A3 (fr) 1992-11-24
EP0461014A1 (fr) 1991-12-11

Similar Documents

Publication Publication Date Title
US4108751A (en) Ion beam implantation-sputtering
JPS6483656A (en) Method and vacuum painting machine for applying film to base layer
WO2000055388A3 (en) Method and apparatus for arc deposition
CA2006124A1 (en) Distributed feedback laser for frequency modulation communication systems
ES2100328T3 (es) Recubrimiento de la superficie de un substrato con una barrera impermeable.
ES2026558T3 (es) Dispositivo de deposito al vacio, por pulverizacion catodica reactiva sobre una lamina de vidrio.
ES2062713T3 (es) Instalacion de pulverizacion catodica de indice elevado.
CN101681816B (zh) 用于薄膜钝化的双靶溅射***及用该***形成薄膜的方法
EP2368282B1 (en) Process of forming protecting layer by particles having low energy
DE10044841A1 (de) Plasmaverkapselungfür elektronische und mikroelektronische Bauelemente wie OLEDs
CN107251650A (zh) 电子器件用密封剂及电子器件的制造方法
US7326446B2 (en) Method for coating metal surfaces and substrate having a coated metal surface
KR100833769B1 (ko) 유기 박막 증착기의 마스크 얼라인먼트용 자석판 및자석판과 마스크의 얼라인먼트 구조
ES2101999T3 (es) Procedimiento para la produccion de una pelicula de barrera, y una pelicula de barrera producida segun el procedimiento.
WO1998002596A1 (de) Vakuumbeschichtungsanlage mit einer beschichtungskammer und zumindest einer quellenkammer
IT1211938B (it) Apparecchiatura e procedimento per la deposizione di uno strato sottile su un substrato trasparente, particolarmente per la realizzazione di vetrature
EP0269112A3 (en) Method of forming a thin crystalline metal film
ES2147967T3 (es) Procedimiento de preparacion de un substrato no conductor para el deposito electrolitico.
JPS5534689A (en) Sputtering device
JPS56156760A (en) Method and apparatus for forming coat
KR20010020500A (ko) 마그네시아를 기초로 한 증착을 발생시키는 방법
EP1017874B1 (en) Colorless diamond-like carbon coatings
JPS56169116A (en) Manufacture of amorphous silicon film
TW201103880A (en) Electronic device and method of manufacturing the same
CA2281265A1 (en) Method for manufacturing a nonlinear optical thin film

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 461014

Country of ref document: ES

FD1A Patent lapsed

Effective date: 19991007