ES2039019T3 - Circuito semiconductor integrado con un sensor de campo magnetico hecho de material semiconductor. - Google Patents
Circuito semiconductor integrado con un sensor de campo magnetico hecho de material semiconductor.Info
- Publication number
- ES2039019T3 ES2039019T3 ES198888119272T ES88119272T ES2039019T3 ES 2039019 T3 ES2039019 T3 ES 2039019T3 ES 198888119272 T ES198888119272 T ES 198888119272T ES 88119272 T ES88119272 T ES 88119272T ES 2039019 T3 ES2039019 T3 ES 2039019T3
- Authority
- ES
- Spain
- Prior art keywords
- magnetic field
- amplifier
- factor
- semi
- field sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000004020 conductor Substances 0.000 abstract 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract 1
- 235000009508 confectionery Nutrition 0.000 abstract 1
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 239000011777 magnesium Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Pyrrole Compounds (AREA)
- Hydrogenated Pyridines (AREA)
- Electronic Switches (AREA)
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
Abstract
LA FABRICACION DE UN MATERIAL SEMI CONDUCTOR, MEJORANDO SU TIEMPO DE ABILIDAD, EN SU CAMPO DE MAGNESIO, Y SOBRE TODO MEJORAR EL ALMACEN DE ELEMENTOS. LA ORDENACION CONSTA DE UNA CONFECCION DE VARIANTES EN UN CAMPO MAGNETICO (1) CONTINUANDO A SU VEZ CON LA INTENSIDAD ELECTRONICA Y EL SISTEMA METAMORFOSICO (2). EL CAMPO MAGNETICO (1), CONSTA DE UN ALMACEN ELECTRONICO (1) UNO DE ESTOS CAMPOS ACTUAN CONFORME AL AMPLIFICADOR (3) Y EL CONDUCTOR MORFOSICO (4). LOS CAMBIOS SE PRODUCEN POR LA INTENSIDAD DE FRECUENCIAS, Y EL ANALOGO DIGITAL. EL AMPLIFICADOR (3) ES MIEMBRO DE CORRECCION QUE TRANSMITE PROPORCIONALMENTE LA CONFECCION DE VRIANTES A LOS FACTORES (1+ N/N) O (1 N/N). ESTE CONSTA (3) DE UN AMPLIFICADOR OPERATIVO, QUE SE INTERPONE, ENTRE LA RESISTENCIA DE ACOPLAMIENTO Y LA RESISTENCIA DE ENTRADA DEL AMPLIFICADOR, ESTE FACTOR ESTA RELACIONADO CON LA OPOSICION DE VALORES, QUE ACTUAN SIMETRICAMENTE EN MEDIO Y UNIENDO EL CAMPO MAGNETIO (1) CON EL MATERIAL SEMI CONDUCTOR. POR OTRA PARTE EL FACTOR N ES EL PORTADOR DE CONCENTRACION DEL MATERIAL SEMI CONDUCTOR, Y APLICANDOLE EL FACTOR N, SE PRODUCE UN CAMBIO EN EL PORTADOR DE MATERIALES (R). OBTENIENDO LA IGUALDAD DEL CAMPO MAGNETIDO (1) QUEDANDO ASI EL PORTADOR DE CONCENTRACION (N) AL MIMO NIVEL QUE EL CAMPO MAGNETICO (1).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH150488 | 1988-04-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2039019T3 true ES2039019T3 (es) | 1993-08-16 |
Family
ID=4211993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES198888119272T Expired - Lifetime ES2039019T3 (es) | 1988-04-21 | 1988-11-19 | Circuito semiconductor integrado con un sensor de campo magnetico hecho de material semiconductor. |
Country Status (8)
Country | Link |
---|---|
US (1) | US4970411A (es) |
EP (1) | EP0338122B1 (es) |
JP (1) | JPH0213869A (es) |
AT (1) | ATE86800T1 (es) |
DE (1) | DE3879187D1 (es) |
ES (1) | ES2039019T3 (es) |
FI (1) | FI891890A (es) |
YU (1) | YU68689A (es) |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532584A (en) * | 1993-08-31 | 1996-07-02 | Eastman Kodak Company | MR sensor including calibration circuit wherein signals are averaged for determining a correction factor and pole pieces are shaped to reduce field in gap therebetween |
DE10224747B4 (de) * | 2002-06-04 | 2004-05-13 | Infineon Technologies Ag | Sensorschaltung und Verfahren zur Herstellung derselben |
JP4496907B2 (ja) * | 2004-09-30 | 2010-07-07 | ヤマハ株式会社 | 磁気測定回路 |
EP1746426B1 (de) * | 2005-07-22 | 2019-03-06 | Melexis Technologies NV | Stromsensor |
US9823090B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a target object |
US7923996B2 (en) | 2008-02-26 | 2011-04-12 | Allegro Microsystems, Inc. | Magnetic field sensor with automatic sensitivity adjustment |
DE102009000363A1 (de) | 2009-01-21 | 2010-07-22 | Hilti Aktiengesellschaft | Schlagwerk und Handwerkzeugmaschine |
DE112010000848B4 (de) | 2009-02-17 | 2018-04-05 | Allegro Microsystems, Llc | Schaltungen und Verfahren zum Erzeugen eines Selbsttests eines Magnetfeldsensors |
KR101673185B1 (ko) | 2009-07-22 | 2016-11-07 | 알레그로 마이크로시스템스, 엘엘씨 | 자기장 센서의 진단 동작 모드 생성 회로 및 방법 |
US8680846B2 (en) | 2011-04-27 | 2014-03-25 | Allegro Microsystems, Llc | Circuits and methods for self-calibrating or self-testing a magnetic field sensor |
US8604777B2 (en) | 2011-07-13 | 2013-12-10 | Allegro Microsystems, Llc | Current sensor with calibration for a current divider configuration |
US9201122B2 (en) * | 2012-02-16 | 2015-12-01 | Allegro Microsystems, Llc | Circuits and methods using adjustable feedback for self-calibrating or self-testing a magnetic field sensor with an adjustable time constant |
US9817078B2 (en) | 2012-05-10 | 2017-11-14 | Allegro Microsystems Llc | Methods and apparatus for magnetic sensor having integrated coil |
US9383425B2 (en) | 2012-12-28 | 2016-07-05 | Allegro Microsystems, Llc | Methods and apparatus for a current sensor having fault detection and self test functionality |
US9548443B2 (en) | 2013-01-29 | 2017-01-17 | Allegro Microsystems, Llc | Vertical Hall Effect element with improved sensitivity |
US10725100B2 (en) | 2013-03-15 | 2020-07-28 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an externally accessible coil |
US9810519B2 (en) | 2013-07-19 | 2017-11-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as tooth detectors |
US10495699B2 (en) | 2013-07-19 | 2019-12-03 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having an integrated coil or magnet to detect a non-ferromagnetic target |
US10145908B2 (en) | 2013-07-19 | 2018-12-04 | Allegro Microsystems, Llc | Method and apparatus for magnetic sensor producing a changing magnetic field |
US9312473B2 (en) * | 2013-09-30 | 2016-04-12 | Allegro Microsystems, Llc | Vertical hall effect sensor |
EP3080627B1 (en) | 2013-12-26 | 2020-10-14 | Allegro MicroSystems, LLC | Methods and apparatus for sensor diagnostics |
US9645220B2 (en) | 2014-04-17 | 2017-05-09 | Allegro Microsystems, Llc | Circuits and methods for self-calibrating or self-testing a magnetic field sensor using phase discrimination |
US9735773B2 (en) | 2014-04-29 | 2017-08-15 | Allegro Microsystems, Llc | Systems and methods for sensing current through a low-side field effect transistor |
US9739846B2 (en) | 2014-10-03 | 2017-08-22 | Allegro Microsystems, Llc | Magnetic field sensors with self test |
US9823092B2 (en) | 2014-10-31 | 2017-11-21 | Allegro Microsystems, Llc | Magnetic field sensor providing a movement detector |
US10712403B2 (en) | 2014-10-31 | 2020-07-14 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US9719806B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a movement of a ferromagnetic target object |
US9720054B2 (en) | 2014-10-31 | 2017-08-01 | Allegro Microsystems, Llc | Magnetic field sensor and electronic circuit that pass amplifier current through a magnetoresistance element |
US10466298B2 (en) | 2014-11-14 | 2019-11-05 | Allegro Microsystems, Llc | Magnetic field sensor with shared path amplifier and analog-to-digital-converter |
US9804249B2 (en) | 2014-11-14 | 2017-10-31 | Allegro Microsystems, Llc | Dual-path analog to digital converter |
US9841485B2 (en) | 2014-11-14 | 2017-12-12 | Allegro Microsystems, Llc | Magnetic field sensor having calibration circuitry and techniques |
US9638764B2 (en) | 2015-04-08 | 2017-05-02 | Allegro Microsystems, Llc | Electronic circuit for driving a hall effect element with a current compensated for substrate stress |
US9851417B2 (en) | 2015-07-28 | 2017-12-26 | Allegro Microsystems, Llc | Structure and system for simultaneous sensing a magnetic field and mechanical stress |
US10107873B2 (en) | 2016-03-10 | 2018-10-23 | Allegro Microsystems, Llc | Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress |
US10132879B2 (en) | 2016-05-23 | 2018-11-20 | Allegro Microsystems, Llc | Gain equalization for multiple axis magnetic field sensing |
US10041810B2 (en) | 2016-06-08 | 2018-08-07 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors that act as movement detectors |
US10012518B2 (en) | 2016-06-08 | 2018-07-03 | Allegro Microsystems, Llc | Magnetic field sensor for sensing a proximity of an object |
US10260905B2 (en) | 2016-06-08 | 2019-04-16 | Allegro Microsystems, Llc | Arrangements for magnetic field sensors to cancel offset variations |
US10162017B2 (en) | 2016-07-12 | 2018-12-25 | Allegro Microsystems, Llc | Systems and methods for reducing high order hall plate sensitivity temperature coefficients |
US9628101B1 (en) * | 2016-09-27 | 2017-04-18 | Semiconductor Components Industries, Llc | Methods and apparatus for an analog-to-digital converter |
US11428755B2 (en) | 2017-05-26 | 2022-08-30 | Allegro Microsystems, Llc | Coil actuated sensor with sensitivity detection |
US10324141B2 (en) | 2017-05-26 | 2019-06-18 | Allegro Microsystems, Llc | Packages for coil actuated position sensors |
US10310028B2 (en) | 2017-05-26 | 2019-06-04 | Allegro Microsystems, Llc | Coil actuated pressure sensor |
US10641842B2 (en) | 2017-05-26 | 2020-05-05 | Allegro Microsystems, Llc | Targets for coil actuated position sensors |
US10996289B2 (en) | 2017-05-26 | 2021-05-04 | Allegro Microsystems, Llc | Coil actuated position sensor with reflected magnetic field |
US10837943B2 (en) | 2017-05-26 | 2020-11-17 | Allegro Microsystems, Llc | Magnetic field sensor with error calculation |
US10520559B2 (en) | 2017-08-14 | 2019-12-31 | Allegro Microsystems, Llc | Arrangements for Hall effect elements and vertical epi resistors upon a substrate |
US10866117B2 (en) | 2018-03-01 | 2020-12-15 | Allegro Microsystems, Llc | Magnetic field influence during rotation movement of magnetic target |
US10424616B1 (en) * | 2018-06-20 | 2019-09-24 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit devices including vertical and lateral hall elements, and methods for fabricating the same |
US11255700B2 (en) | 2018-08-06 | 2022-02-22 | Allegro Microsystems, Llc | Magnetic field sensor |
US10823586B2 (en) | 2018-12-26 | 2020-11-03 | Allegro Microsystems, Llc | Magnetic field sensor having unequally spaced magnetic field sensing elements |
US11061084B2 (en) | 2019-03-07 | 2021-07-13 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deflectable substrate |
US10955306B2 (en) | 2019-04-22 | 2021-03-23 | Allegro Microsystems, Llc | Coil actuated pressure sensor and deformable substrate |
US11237020B2 (en) | 2019-11-14 | 2022-02-01 | Allegro Microsystems, Llc | Magnetic field sensor having two rows of magnetic field sensing elements for measuring an angle of rotation of a magnet |
US11280637B2 (en) | 2019-11-14 | 2022-03-22 | Allegro Microsystems, Llc | High performance magnetic angle sensor |
US11194004B2 (en) | 2020-02-12 | 2021-12-07 | Allegro Microsystems, Llc | Diagnostic circuits and methods for sensor test circuits |
US11169223B2 (en) | 2020-03-23 | 2021-11-09 | Allegro Microsystems, Llc | Hall element signal calibrating in angle sensor |
US11262422B2 (en) | 2020-05-08 | 2022-03-01 | Allegro Microsystems, Llc | Stray-field-immune coil-activated position sensor |
US11493361B2 (en) | 2021-02-26 | 2022-11-08 | Allegro Microsystems, Llc | Stray field immune coil-activated sensor |
US11630130B2 (en) | 2021-03-31 | 2023-04-18 | Allegro Microsystems, Llc | Channel sensitivity matching |
US11578997B1 (en) | 2021-08-24 | 2023-02-14 | Allegro Microsystems, Llc | Angle sensor using eddy currents |
US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3816766A (en) * | 1973-01-29 | 1974-06-11 | Sprague Electric Co | Integrated circuit with hall cell |
US4292582A (en) * | 1977-06-22 | 1981-09-29 | Nippon Klingage Kabushiki Kaisha | Residual voltage regulating circuit for hall element |
DE2844420A1 (de) * | 1978-10-12 | 1980-04-24 | Itt Ind Gmbh Deutsche | Integriertes hall-bauelement |
DE3061485D1 (en) * | 1979-05-04 | 1983-02-03 | Gen Electric Co Plc | Carrier-domain magnetometers |
CH664632A5 (de) * | 1984-08-16 | 1988-03-15 | Landis & Gyr Ag | Schaltungsanordnung zur kompensation von schwankungen des uebertragungsfaktors eines magnetfeldsensors. |
US4760285A (en) * | 1987-03-30 | 1988-07-26 | Honeywell Inc. | Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity |
-
1988
- 1988-11-19 DE DE8888119272T patent/DE3879187D1/de not_active Expired - Fee Related
- 1988-11-19 EP EP88119272A patent/EP0338122B1/de not_active Expired - Lifetime
- 1988-11-19 ES ES198888119272T patent/ES2039019T3/es not_active Expired - Lifetime
- 1988-11-19 AT AT88119272T patent/ATE86800T1/de not_active IP Right Cessation
-
1989
- 1989-04-05 YU YU68689A patent/YU68689A/sh unknown
- 1989-04-19 US US07/340,274 patent/US4970411A/en not_active Expired - Fee Related
- 1989-04-19 JP JP1097708A patent/JPH0213869A/ja active Pending
- 1989-04-20 FI FI891890A patent/FI891890A/fi not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
YU68689A (sh) | 1992-07-20 |
EP0338122A1 (de) | 1989-10-25 |
EP0338122B1 (de) | 1993-03-10 |
ATE86800T1 (de) | 1993-03-15 |
US4970411A (en) | 1990-11-13 |
JPH0213869A (ja) | 1990-01-18 |
FI891890A (fi) | 1989-10-22 |
DE3879187D1 (de) | 1993-04-15 |
FI891890A0 (fi) | 1989-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG2A | Definitive protection |
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