DE69215949D1 - BICMOS Schaltung mit niedriger Schwelle - Google Patents

BICMOS Schaltung mit niedriger Schwelle

Info

Publication number
DE69215949D1
DE69215949D1 DE69215949T DE69215949T DE69215949D1 DE 69215949 D1 DE69215949 D1 DE 69215949D1 DE 69215949 T DE69215949 T DE 69215949T DE 69215949 T DE69215949 T DE 69215949T DE 69215949 D1 DE69215949 D1 DE 69215949D1
Authority
DE
Germany
Prior art keywords
low threshold
bicmos circuit
bicmos
circuit
threshold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69215949T
Other languages
English (en)
Inventor
Yogi K Puri
Raymond D Schulz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69215949D1 publication Critical patent/DE69215949D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
DE69215949T 1991-04-18 1992-03-26 BICMOS Schaltung mit niedriger Schwelle Expired - Lifetime DE69215949D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/687,341 US5132567A (en) 1991-04-18 1991-04-18 Low threshold BiCMOS circuit

Publications (1)

Publication Number Publication Date
DE69215949D1 true DE69215949D1 (de) 1997-01-30

Family

ID=24760072

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69215949T Expired - Lifetime DE69215949D1 (de) 1991-04-18 1992-03-26 BICMOS Schaltung mit niedriger Schwelle

Country Status (4)

Country Link
US (1) US5132567A (de)
EP (1) EP0509283B1 (de)
JP (1) JP2548864B2 (de)
DE (1) DE69215949D1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0653843A3 (de) * 1993-11-17 1996-05-01 Hewlett Packard Co CMOS Schaltungen mit adaptiver Spannungsschwelle.
JP3754070B2 (ja) * 1994-02-15 2006-03-08 ラムバス・インコーポレーテッド 遅延ロック・ループ
JP2643840B2 (ja) * 1994-06-16 1997-08-20 日本電気株式会社 半導体集積回路装置
DE69529367T2 (de) * 1994-08-19 2004-01-22 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterspeicheranordnung und hochspannungsschaltende Schaltung
TW280027B (de) * 1994-09-30 1996-07-01 Rambus Inc
JP2000077984A (ja) * 1998-08-31 2000-03-14 Nec Corp リングオッシレータと遅延回路

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
JPH07107973B2 (ja) * 1984-03-26 1995-11-15 株式会社日立製作所 スイツチング回路
US4616146A (en) * 1984-09-04 1986-10-07 Motorola, Inc. BI-CMOS driver circuit
JPS62221219A (ja) * 1986-03-22 1987-09-29 Toshiba Corp 論理回路
DE3878345T2 (de) * 1987-08-17 1993-05-27 Nippon Electric Co Bimosschaltung, faehig zum betrieb bei hoher geschwindigkeit mit niedrigem verbrauch.
JP2569113B2 (ja) * 1988-03-07 1997-01-08 株式会社日立製作所 半導体集積回路装置
US4851713A (en) * 1988-03-10 1989-07-25 Gte Laboratories Incorporated Fast CMOS NAND gate circuit
JP2550138B2 (ja) * 1988-03-18 1996-11-06 株式会社日立製作所 バイポーラトランジスタと電界効果トランジスタとを有する半導体集積回路装置
KR920009870B1 (ko) * 1988-04-21 1992-11-02 삼성반도체통신 주식회사 Bi-CMOS 인버터 회로
JPH01286617A (ja) * 1988-05-13 1989-11-17 Nec Corp ＢｉＣＭＯＳ論理回路
JP2553632B2 (ja) * 1988-05-16 1996-11-13 松下電器産業株式会社 バイモス型論理回路
US4845385A (en) * 1988-06-21 1989-07-04 Silicon Connections Corporation BiCMOS logic circuits with reduced crowbar current
JP2696991B2 (ja) * 1988-09-26 1998-01-14 日本電気株式会社 ＢｉＣＭＯＳ論理回路
JPH06103839B2 (ja) * 1988-12-28 1994-12-14 株式会社東芝 半導体論理回路
DE69026534T2 (de) * 1989-05-15 1996-09-12 Texas Instruments Inc BICMOS-Hochleistungsschaltkreis mit voller Ausgangsspannungsschwingung
US4999523A (en) * 1989-12-05 1991-03-12 Hewlett-Packard Company BICMOS logic gate with higher pull-up voltage

Also Published As

Publication number Publication date
JP2548864B2 (ja) 1996-10-30
EP0509283A1 (de) 1992-10-21
JPH04346515A (ja) 1992-12-02
EP0509283B1 (de) 1996-12-18
US5132567A (en) 1992-07-21

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Legal Events

Date Code Title Description
8332 No legal effect for de