EP3702048A1 - Verfahren zum trocknen einer polyimidpaste und verfahren zur herstellung von solarzellen, die in der lage sind, eine hocheffiziente photoelektrische umwandlung zu ermöglichen - Google Patents

Verfahren zum trocknen einer polyimidpaste und verfahren zur herstellung von solarzellen, die in der lage sind, eine hocheffiziente photoelektrische umwandlung zu ermöglichen Download PDF

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Publication number
EP3702048A1
EP3702048A1 EP18869781.7A EP18869781A EP3702048A1 EP 3702048 A1 EP3702048 A1 EP 3702048A1 EP 18869781 A EP18869781 A EP 18869781A EP 3702048 A1 EP3702048 A1 EP 3702048A1
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EP
European Patent Office
Prior art keywords
polyimide
paste
solvent
cured
polar material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
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EP18869781.7A
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English (en)
French (fr)
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EP3702048B1 (de
EP3702048A4 (de
Inventor
Takenori Watabe
Hiroshi Hashigami
Hiroyuki Ohtsuka
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/105—Intermediate treatments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
    • B05D3/107—Post-treatment of applied coatings
    • B05D3/108—Curing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • B05D7/26—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials synthetic lacquers or varnishes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to a drying method of a polyimide paste and a manufacturing method of a solar cell.
  • FIG. 2 An overview of the back side of this back contact type solar cell is illustrated in FIG. 2 .
  • emitter layers 112 and base layers 113 are alternately arranged, and electrodes 124 and 125 (emitter electrodes 124 and base electrodes 125) are provided along the respective layers.
  • bus bar electrodes 134 and 135 (an emitter electrode bus bar 134 and a base electrode bus bar 135) for collecting currents obtained from these electrodes are provided.
  • the bus bar electrodes are often orthogonal to collecting electrodes.
  • a width of the emitter layer 112 is often from several mm to several hundred ⁇ m, and a width of the base layer 113 is often from several hundred ⁇ m to several tens ⁇ m. Further, a width of the electrode is typically approximately from several hundred to several tens ⁇ m, and the electrode is often called a finger electrode.
  • FIG. 3 A schematic diagram of a cross-sectional structure of the solar cell 100 is illustrated in FIG. 3 .
  • the emitter layers 112 and the base layers 113 are formed in the vicinity of an outermost surface of the back side of the substrate 110. Each film thickness of the emitter layer 112 and the base layer 113 is typically approximately 1 ⁇ m at most.
  • the finger electrodes 124 and 125 (the emitter electrodes 124 and the base electrodes 125) are provided, and a surface of a non-electrode region is covered with a dielectric film (backside passivation film) 142 such as a silicon nitride film and a silicon oxide film.
  • an antireflection film 141 is provided for the purpose of reducing reflectance loss.
  • a structure of a back side of this solar cell has a structure as schematically illustrated in FIG. 5(c) which will be described in detail later.
  • an insulating paste such as a polyimide paste is printed in a pattern shape, dried and cured, and bus bars are formed on this with a low-temperature curing conductive paste, which will be described in detail later.
  • Patent Document 2 a method for performing treatment at a high temperature after performing treatment at a low temperature for a fixed period to volatilize a solvent to some extent is publicly known in Patent Document 2. While a problem of dropping of a print is solved by this method, at the same time, degradation of productivity such as increase in a treatment period and increase in a size of a treatment apparatus, occurs.
  • the present invention has been made in view of the above-mentioned problems, and is directed to providing a drying method of a polyimide paste which can maintain a shape while maintaining productivity. Further, the present invention is directed to providing a manufacturing method of a solar cell which can dry a polyimide paste while maintaining productivity and maintaining a shape when a solar cell which includes a cured polyimide film as part of a structure of the solar cell is manufactured.
  • the present invention provides a drying method of a polyimide paste which includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated, the drying method including a step of applying the polyimide paste to a surface of a base material, a step of applying a solvent including a polar material to a surface of the base material at least at a portion where the polyimide paste is applied, and a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material.
  • the polar material is preferably at least one type among water, ethylene glycol, acetic acid, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, and formic acid.
  • the solvent including the polar material is preferably a solvent which includes the polar material of equal to or more than one percent by mass.
  • the present invention provides a manufacturing method of a solar cell which includes a cured polyimide film formed with cured polyimide as part of a structure of the solar cell, the manufacturing method including a step of, when the cured polyimide film is formed, drying a polyimide paste using the drying method of the polyimide paste according to one of the above-described methods.
  • the present invention provides a manufacturing method of a solar cell which includes a cured polyimide film formed with cured polyimide as part of a structure of the solar cell, the manufacturing method including a step of forming a pn junction which joins a p-type layer and an n-type layer within a semiconductor substrate, a step of forming a p-type electrode which electrically contacts the p-type layer, a step of forming an n-type electrode which electrically contacts the n-type layer, and, further, when the cured polyimide film is formed, a step of applying a polyimide paste which includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes the cured polyimide by being cured as a result of being dried and heated, to a surface of a structure including the semiconductor substrate, a step of applying a solvent including a polar material of at least one type among water, ethylene glycol, acetic acid, methanol, ethanol, 1-propan
  • the solvent including the polar material is preferably a solvent which includes the polar material of equal to or more than one percent by mass.
  • the drying method of the polyimide paste of the present invention it is possible to reproducibly obtain a pattern in a desired shape without increasing a drying period, therefore, while maintaining productivity. While, conventionally, a drying method in which a temperature is risen in two stages is required to perform drying so as not to cause dropping of a polyimide paste, by using the present invention, it becomes possible to perform dry at a high temperature from the beginning, so that it becomes possible to improve productivity as a result of reducing a size of a drying apparatus and shortening a drying period.
  • the drying method of a polyimide paste of the present invention can be applied to manufacturing of a solar cell, so that it becomes possible to improve productivity of manufacturing of a solar cell.
  • a polyimide paste which can be applied in a drying method of a polyimide paste of the present invention is a polyimide paste which includes an organic solvent and a polyimide resin dissolved in the organic solvent, and which becomes cured polyimide by being cured as a result of being dried and heated. That is, this polyimide paste is formed with at least polyimide molecules and a solvent, and other components such as a thixotropic agent may be mixed as necessary. Further, the polyimide paste becomes a paste form by making viscosity from 30 to 150 Pa ⁇ s, and if an arbitrary shape is drawn, its shape can be maintained. Therefore, by using a printing method, or the like, it is possible to form polyimide in a desired pattern shape on a substrate.
  • Desired characteristics of the polyimide paste are normally obtained by a solvent being volatilized at 50 to 300°C and cured by being heated at 250 to 400°C.
  • a desired pattern cannot be obtained by viscosity decreasing and fluidity being expressed.
  • the polyimide paste and the solvent are dried. It is preferable to perform drying at equal to or higher than 140°C.
  • the polyimide paste is dried. That is, first, the polyimide paste is applied to a surface of a base material (step S1).
  • the base material can be made a target on which the cured polyimide is to be formed.
  • a solvent including a polar material is applied to a surface of the base material at least at a portion where the polyimide paste is applied (step S2).
  • This solvent preferably includes one of water, ethylene glycol, acetic acid, methanol, ethanol, 1-propanol (n-propanol), 2-propanol, 1-butanol, and formic acid as the polar material. Vapor pressures of these solvents are relatively low, and increase in a drying period as a result of application of these is minor. Further, the concentration is preferably equal to or higher than one percent by mass, and may be 100 percent.
  • step S3 the polyimide paste and the solvent including the polar material are dried.
  • the polar material as described above (the above-described polar material is also itself a solvent having polarity) is attached to the paste, polyimide molecules are precipitated from the solvent in the paste and solidified. Because fluidity as the paste is lost, if they are subjected to treatment at a high temperature, the shape does not expand.
  • a method for applying the solvent including the polar material while it is also possible to use a method in which the base material is immersed into the solvent, a printing method or a spin coat method, a sufficient effect can be obtained even through spraying of a small amount of the solvent.
  • "application” of the solvent in the present invention includes a method for putting the surface into a state where the solvent is brought into contact with the surface at least at a portion where the polyimide paste is applied to cover the surface at the portion. Further, after the polyimide is applied, and before the solvent is applied, leaving for leveling, vacuum defoaming, or the like, may be performed as appropriate.
  • the above-described method can be applied to manufacturing of a solar cell. That is, in the manufacturing method of a solar cell which includes a cured polyimide film formed with cured polyimide as part of a structure of the solar cell, when the cured polyimide film is formed, it is possible to apply the drying method of a polyimide paste of the present invention.
  • the drying method of a polyimide paste of the present invention can be applied to a manufacturing method of a solar cell which includes a cured polyimide film formed with cured polyimide as part of a structure of the solar cell, the manufacturing method including a step of forming a pn junction for joining a p-type layer and an n-type layer within a semiconductor substrate, a step of forming a p-type electrode which electrically contacts the p-type layer, and a step of forming an n-type electrode which electrically contacts the n-type layer.
  • the manufacturing method of the solar cell includes a step of, when a cured polyimide film is formed, applying a polyimide paste which includes an organic solvent and a polyimide resin dissolved in the organic solvent and which becomes cured polyimide by being cured as a result of being dried and heated, to a surface of a structure including a semiconductor substrate, a step of applying a solvent including a polar material to a surface of the structure including the semiconductor substrate at least at a portion where the polyimide paste is applied, a step of, after applying the solvent including the polar material, drying the polyimide paste and the solvent including the polar material, and a step of heating and curing the dried polyimide paste to form a cured polyimide film.
  • group V elements such as phosphorus, arsenic and antimony are doped to high-purity silicon to prepare an as-cut single-crystal ⁇ 100 ⁇ N-type silicon substrate 310 whose specific resistance is made 0.1 to 5 ⁇ cm.
  • the single-crystal substrate may be manufactured using either a CZ method or an FZ method.
  • the substrate 310 does not necessarily have to be a single-crystal silicon, and may be polycrystalline silicon.
  • the texture has a structure of a minute pyramid shape and is formed by utilizing characteristics that etching speed differs depending on a plane direction of a crystal.
  • the texture is manufactured by the substrate being immersed into a heated alkaline solution (having concentration of 1 to 10% and at a temperature from 60 to 100°C) of sodium hydroxide, potassium hydroxide, potassium carbonate, sodium carbonate, sodium hydrogen carbonate, or the like, for approximately 10 to 30 minutes. It is also possible to promote reaction by dissolving 2-propanol of a predetermined amount in the above-described solution.
  • the substrate is cleaned in an acid aqueous solution of hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, or a mixed liquid thereof. It is also possible to improve a cleaning level by mixing hydrogen peroxide.
  • the emitter layer 312 is formed on a first main surface of this substrate 310 (a main surface which becomes a non-light-receiving surface (back side) when this is made a solar cell) ( FIG. 4(b) ).
  • the emitter layer 312 has a conductivity type (in this case, a p-type) inverse to that of the substrate 310, and has a thickness of approximately 0.05 to 2 ⁇ m.
  • the emitter layer 312 can be formed through vapor-phase diffusion using BBr 3 , or the like.
  • a pair of two substrates 310 are superimposed and placed in a heat treat furnace, and is subjected to heat treatment at 950 to 1050°C by introducing a mixed gas of BBr 3 and oxygen.
  • the emitter layer 312 As a carrier gas, nitrogen and argon are suitable. Further, it is also possible to form the emitter layer 312 using a method in which a coating agent including a boron source is applied to the first main surface, and heat treatment is performed at 950 to 1050°C.
  • a coating agent including a boron source for example, an aqueous solution including boric acid of 1 to 4 % as a boron source, and polyvinyl alcohol of 0.1 to 4% as a thickener can be used. If the emitter layer 312 is formed using one of the above-described methods, a glass layer including boron is also formed at the same time on the surface of the emitter layer 312.
  • masks (diffusion masks, barrier films) 351 and 352 for forming the base layer which is the next step are formed on the both main surfaces ( FIG. 4(c) ).
  • a silicon oxide film, a silicon nitride film, or the like can be used as the masks 351 and 352. If a CVD method is used, by selecting a type of a gas to be introduced as appropriate, it is possible to form any film. In a case of a silicon oxide film, it is possible to form the masks by thermally oxidizing the substrate 310.
  • a silicon oxide film of approximately 100 to 250 nm is formed.
  • This heat treatment may be performed within the same batch subsequent to the heat treatment for emitter formation described above.
  • glass is formed on the surface of the substrate 310 as described above after the emitter layer 312 is formed, this glass is preferably not removed before the masks are formed particularly in a case where the emitter layer 312 is a p-type. By not removing the glass layer, it is possible to suppress increase in the number of processes and to prevent decrease in minority carrier lifetime of the substrate 310. It is considered the glass layer provides a gettering effect.
  • boron is used as a dopant for the emitter layer 312
  • surface concentration of boron preferably decreases and a recombination rate on the surface decreases by a difference in a diffusion coefficient and a segregation coefficient between in Si and in SiO 2 .
  • the mask 352 is open at a portion which becomes a base region (mask opening portion 354). Specifically, the mask 352 is opened to have an opening width of 50 to 200 ⁇ m in a shape of parallel lines at intervals of approximately 0.6 to 2.0 mm. Either a chemical method like a photolithography method or etching paste, or a physical method like laser or dicer may be used.
  • the substrate 310 may be immersed into an alkali aqueous solution which is an aqueous solution of KOH, NaOH, or the like, which is heated at 50 to 90°C and whose concentration is high (10 to 30%), for 1 to 30 minutes, to remove (etch) the emitter layer 312 which is unnecessary at the opening portion (recess 361 at the mask opening portion).
  • the above-described masks 351 and 352 also function as masks for alkali etching in the present step. If this etching is performed, as illustrated in FIG. 4(e) , a recess is formed on the surface of the substrate 310.
  • a depth of the recess is determined by a depth of the emitter layer 312, and is, normally, approximately 0.5 to 10 ⁇ m.
  • the base layer 313 is formed.
  • a vapor-phase diffusion method using phosphoryl chloride can be used to form the base layer 313.
  • the substrate 310 being subjected to heat treatment under an atmosphere of phosphoryl chloride and a mixture gas of nitrogen and oxygen at 830 to 950°C, a phosphorus diffusion layer (N + layer) which becomes the base layer 313 is formed.
  • the base layer it is also possible to form the base layer using a method in which a material including phosphorus is spin coated, or heat treatment is performed after printing. Because the mask 351 is formed on the light receiving surface side upon formation of the base layer 313 (see FIG.
  • phosphorus is not auto-doped on the light receiving surface side upon heat treatment. Further, because the masks 351 and 352 are unnecessary in the subsequent steps, it is not necessary to oxide the substrate 310 more than necessary or form an extra film. That is, at a time point at which heat treatment for forming the base layer is finished, a thickness of the silicon oxide film on the base layer may be equal to or less than 95 nm. Note that, in a case where the above-described etching step is performed, as illustrated in FIG. 4(f) , the base layer is formed on an inner surface of the recess 361.
  • the masks and glass formed on the surfaces are removed with hydrofluoric acid, or the like. By this means, as illustrated in FIG. 4(f) , the masks 351 and 352 are removed.
  • an antireflection film 341 is formed on a second main surface (a main surface opposite to the above-described first main surface) ( FIG. 4(g) ).
  • a silicon nitride film, a silicon oxide film, or the like can be utilized.
  • a film of approximately 100 nm is formed using a plasma CVD apparatus.
  • As a reaction gas while a mixture of silane (SiH 4 ) and ammonia (NH 3 ) is often used, nitrogen can be also used in place of NH 3 .
  • a silicon nitride film and a silicon oxide film can be used also for the first main surface as a film which passivates the surface of the substrate (backside passivation film) ( FIG. 4(g) ).
  • a film thickness of the backside passivation film 342 is preferably 50 to 250 nm.
  • the backside passivation film 342 can be formed using a CVD method in a case of a silicon nitride film and can be formed using a thermal oxidation method or a CVD method in a case of a silicon oxide film in a similar manner to the antireflection film 341 on the second main surface (light receiving surface) side.
  • the substrate is an N-type as in this example
  • an aluminum oxide film is formed also on the base (N-type) layer, because most part of the surface (first main surface) is the emitter (P-type) layer 312, there is minor degradation in characteristics due to this.
  • the base electrodes 325 and the emitter electrodes 324 are formed ( FIG. 4(h) ).
  • the base electrodes 325 are formed using, for example, a screen printing method. For example, a plate having a pattern of parallel lines at intervals of 0.6 to 2.0 mm, whose opening width is 30 to 100 ⁇ m, is prepared, and an Ag paste in which Ag powder and glass frit are mixed with an organic binder is printed along the base layer. In a similar manner, an Ag paste is printed as the emitter electrodes 324.
  • the Ag paste for the base electrodes may be the same as or may be different from the Ag paste for the emitter electrodes.
  • the Ag powder is made to penetrate through (fire-through) the silicon nitride film through heat treatment, so that the electrodes are in conduction with the silicon.
  • Burning is normally performed through treatment at a temperature from 700 to 850°C for 1 to 5 minutes.
  • a passivation film backside passivation film 342
  • the emitter layer 312 is formed at a portion where texture is formed, it is possible to realize low contact resistance without removing the passivation film (backside passivation film 342). Note that it is also possible to perform burning separate for the base layer electrodes 325 and the emitter layer electrodes 324.
  • FIG. 5(a) is a top view of the substrate 310 after the above-described step in FIG. 4(h) .
  • the emitter electrodes 324 and the base electrodes 325 are respectively formed on the emitter region (emitter layer) 312 and the base region (base layer) 313.
  • a polyimide paste is applied to this substrate 310 in a pattern shape.
  • the polyimide paste is only required to be applied in a pattern at a position of the insulating film 371 illustrated in, for example, FIG.
  • N bus bar in this case, a bus bar connected to the base electrodes
  • P bus bar in this case, a bus bar connected to the emitter electrodes
  • a screen printing method, an ink jet method, or the like can be used for application.
  • a solvent including a polar material is applied.
  • drying step drying is performed at, for example, equal to or higher than 140°C.
  • the solvent preferably includes one of water, ethylene glycol, acetic acid, methanol, ethanol, 1-propanol (n-propanol), 2-propanol, 1-butanol, and formic acid, and concentration is preferably equal to or higher than one percent by mass.
  • concentration is preferably equal to or higher than one percent by mass.
  • bus bars are formed. As illustrated in FIG. 5(c) , N bus bars (base electrode bas bars 335) are connected to the base electrodes 325, P bus bars (emitter electrode bus bars 334) are connected to the emitter electrodes 324, the N bus bars (base electrode bus bars 335) are connected to the emitter electrodes 324 via the insulating layers 371, and the P bus bars (emitter electrode bus bars 334) are connected to the base electrodes 325 via the insulating layers 371. As a material for the bus bars, a low-temperature curing conductive paste can be used.
  • a material including a conductive material of one or more types selected from Ag, Cu, Au, Al, Zn, In, Sn, Bi and Pb, and, further, a resin of one or more types selected from an epoxy resin, an acryl resin, a polyester resin, a phenol resin, and a silicone resin can be used.
  • the material as described above is applied in a pattern shape using, for example, a screen printing method, a dispenser, or the like, the material is cured at 100 to 400°C for 1 to 60 minutes. Because a distance between adjacent bus bars can be shortened by increasing bus bars, it is possible to make the finger electrodes thinner, so that it is possible to reduce cost of materials of the finger electrodes.
  • the number of bus bars can be determined as appropriate by trade-off between increase in cost of materials as a result of the number of bus bars being increased and reduction in cost of materials by the finger electrodes being made thinner, the number of bus bars is preferably between 4 and 20. In this manner, the solar cell 300 illustrated in FIG. 5(c) is manufactured.
  • the present invention can be also applied in a case where the substrate is a P-type substrate. That is, it is only necessary to provide an N-type layer as the emitter layer 312 and provide a P-type layer as the base layer 313.
  • the present invention can be also applied to a manufacturing method of a double side electrode type solar cell in Patent Document 3.
  • a film of Al is formed on a back side of a substrate, and the substrate is subjected to heat treatment to form a BSF layer, the Al is removed.
  • a polyimide paste with an opening portion is printed here. While a size of the opening is preferably from 40 to 300 ⁇ m, if the substrate is dried immediately after printing, there is a case where the pattern may drop, and the opening may become smaller.
  • the paste is solidified by a solvent being sprayed, or the like, on the printing surface. By this means, dropping is suppressed, so that it is possible to realize stable manufacturing.
  • Al is evaporated to make a backside electrode.
  • the present invention can be also applied to a manufacturing method of a back contact type solar cell in Patent Document 4.
  • a silicon oxide film is formed on these.
  • a polyimide paste is screen-printed on this silicon oxide film.
  • An opening of a plate is approximately 200 ⁇ m.
  • the paste is solidified by a solvent being sprayed, or the like, on the printing surface. By this means, dropping is suppressed, so that it is possible to realize stable manufacturing.
  • a silicon oxide film is partially open to form electrodes.
  • the present invention can be also applied to a manufacturing method of a back contact type solar cell in Patent Document 5.
  • An emitter layer, a base layer and a silicon oxide film are formed on a back side of a substrate.
  • a polyimide paste is printed in a pattern such that the polyimide paste is open only to the base layer, through screen printing or ink jet printing. While the opening is preferably approximately 30 to 300 ⁇ m, also in this case, if the substrate is dried immediately after printing, there is a case where the pattern may drop and the opening may become smaller.
  • the paste is solidified by a solvent being sprayed, or the like, on the printing surface. By this means, dropping is suppressed, so that it is possible to realize stable manufacturing.
  • a contact portion is partially open to form an electrode.
  • printing was performed on a silicon substrate using a screen printing method using polyimide for screen printing Q-IP-0997-N of PI R&D Co.,ltd.
  • a printing plate had a pattern such that a plurality of non-opening portions (non-printing portions) each having a diameter of 100 ⁇ m were provided, and printing was performed on the whole area other than these portions.
  • Various kinds of solvents were sprayed on a printing surface of a substrate immediately after printing, the substrate was dried by a hot plate at 140°C, and a printing shape was observed with a microscope. Ten portions were observed for respective conditions, and average values of the obtained diameters of openings are indicated in Table 1.
  • a solar cell was manufactured using the method of the present invention.
  • a phosphorous-doped ⁇ 100 ⁇ N-type as-cut silicon substrate having a thickness of 200 ⁇ m and specific resistance of 1 ⁇ cm was immersed into an aqueous solution of 2% potassium hydroxide / 2-propanol at 72°C to form texture on both sides, and, subsequently, the substrate was cleaned in a mixed solution of hydrochloric acid / hydrogen peroxide heated at 75°C.
  • the mask on the back side was open using laser.
  • a laser source a second harmonic of Nd:YVO 4 was used.
  • the opening pattern was a shape of parallel lines at intervals of 1.2 mm. This was immersed into KOH at 80°C, whose concentration was 24% to remove the emitter layer at the opening portion.
  • the substrates was subjected to heat treatment at 870°C for 40 minutes in a state where light receiving surfaces are superimposed on each other to form a phosphorous diffusion layer at the opening portion.
  • the substrate was immersed into hydrofluoric acid whose concentration was 25% to remove surface glass and the masks.
  • an aluminum oxide film and a silicon nitride film were formed on both sides using a plasma CVD apparatus. Film thicknesses were respectively set at 10 nm and 100 nm on both sides.
  • a polyimide paste was printed on this substrate in a pattern shape using a screen printer. After printing, pure water was uniformly sprayed on a printing surface, and the substrate was dried for 5 minutes at a belt furnace at 200°C.
  • a low-temperature curing Ag paste was printed in a shape of six lines so as to be orthogonal to the existing finger electrode using a screen printer and cured for 30 minutes at a belt furnace at 300°C to make bus bars.
  • Example 10 after the polyimide paste was printed, the substrate was dried for 5 minutes at a belt furnace at 200°C without pure water being sprayed. Thereafter, the bus bars were formed using a method similar to that in Example 10.

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EP18869781.7A 2017-10-26 2018-08-24 Verfahren zum trocknen einer polyimidpaste und verfahren zur herstellung von solarzellen, die in der lage sind, eine hocheffiziente photoelektrische umwandlung zu ermöglichen Active EP3702048B1 (de)

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PCT/JP2018/031330 WO2019082495A1 (ja) 2017-10-26 2018-08-24 ポリイミドペーストの乾燥方法及び高光電変換効率太陽電池の製造方法

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US8008575B2 (en) 2006-07-24 2011-08-30 Sunpower Corporation Solar cell with reduced base diffusion area
US7838062B2 (en) 2007-05-29 2010-11-23 Sunpower Corporation Array of small contacts for solar cell fabrication
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JP5655206B2 (ja) 2010-09-21 2015-01-21 株式会社ピーアイ技術研究所 太陽電池の裏面反射層形成用ポリイミド樹脂組成物及びそれを用いた太陽電池の裏面反射層形成方法
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EP3702048A4 (de) 2021-07-14
US20200303570A1 (en) 2020-09-24
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US11742439B2 (en) 2023-08-29
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