EP3639265A4 - Finer grain dynamic random access memory - Google Patents

Finer grain dynamic random access memory Download PDF

Info

Publication number
EP3639265A4
EP3639265A4 EP18818644.9A EP18818644A EP3639265A4 EP 3639265 A4 EP3639265 A4 EP 3639265A4 EP 18818644 A EP18818644 A EP 18818644A EP 3639265 A4 EP3639265 A4 EP 3639265A4
Authority
EP
European Patent Office
Prior art keywords
random access
access memory
dynamic random
finer grain
grain dynamic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18818644.9A
Other languages
German (de)
French (fr)
Other versions
EP3639265A1 (en
Inventor
Brent Keeth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/976,580 external-priority patent/US11527510B2/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of EP3639265A1 publication Critical patent/EP3639265A1/en
Publication of EP3639265A4 publication Critical patent/EP3639265A4/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408Address circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/12Group selection circuits, e.g. for memory block selection, chip selection, array selection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Steroid Compounds (AREA)
EP18818644.9A 2017-06-12 2018-05-18 Finer grain dynamic random access memory Pending EP3639265A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762518575P 2017-06-12 2017-06-12
US15/976,580 US11527510B2 (en) 2017-06-16 2018-05-10 Finer grain dynamic random access memory
PCT/US2018/033317 WO2018231423A1 (en) 2017-06-12 2018-05-18 Finer grain dynamic random access memory

Publications (2)

Publication Number Publication Date
EP3639265A1 EP3639265A1 (en) 2020-04-22
EP3639265A4 true EP3639265A4 (en) 2021-01-06

Family

ID=64659860

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18818644.9A Pending EP3639265A4 (en) 2017-06-12 2018-05-18 Finer grain dynamic random access memory

Country Status (4)

Country Link
EP (1) EP3639265A4 (en)
KR (2) KR102438390B1 (en)
CN (1) CN110870011B (en)
WO (1) WO2018231423A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117389459A (en) * 2022-06-29 2024-01-12 华为技术有限公司 Memory, chip stacking structure, chip packaging structure and electronic equipment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090103345A1 (en) * 2007-10-23 2009-04-23 Mclaren Moray Three-dimensional memory module architectures
US20100121994A1 (en) * 2008-11-10 2010-05-13 International Business Machines Corporation Stacked memory array
US20150270250A1 (en) * 2012-11-13 2015-09-24 Ps4 Luxco S.A.R.L. Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
US8796863B2 (en) * 2010-02-09 2014-08-05 Samsung Electronics Co., Ltd. Semiconductor memory devices and semiconductor packages
US8644104B2 (en) * 2011-01-14 2014-02-04 Rambus Inc. Memory system components that support error detection and correction
JP2016520226A (en) * 2013-05-16 2016-07-11 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated Memory system with region specific memory access scheduling
KR20150025763A (en) * 2013-08-30 2015-03-11 에스케이하이닉스 주식회사 Memory system
US9172567B2 (en) * 2013-11-25 2015-10-27 Qualcomm Incorporated Methods and apparatus to reduce signaling power
KR102238706B1 (en) * 2014-11-28 2021-04-09 삼성전자주식회사 Semiconductor memory device and memory system including the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090103345A1 (en) * 2007-10-23 2009-04-23 Mclaren Moray Three-dimensional memory module architectures
US20100121994A1 (en) * 2008-11-10 2010-05-13 International Business Machines Corporation Stacked memory array
US20150270250A1 (en) * 2012-11-13 2015-09-24 Ps4 Luxco S.A.R.L. Semiconductor device

Also Published As

Publication number Publication date
KR20210116675A (en) 2021-09-27
KR102438390B1 (en) 2022-08-31
CN110870011A (en) 2020-03-06
KR20200008024A (en) 2020-01-22
EP3639265A1 (en) 2020-04-22
WO2018231423A1 (en) 2018-12-20
CN110870011B (en) 2023-11-03

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