EP3289113A1 - Verfahren zur herstellung von beschichteten substraten - Google Patents
Verfahren zur herstellung von beschichteten substratenInfo
- Publication number
- EP3289113A1 EP3289113A1 EP16714365.0A EP16714365A EP3289113A1 EP 3289113 A1 EP3289113 A1 EP 3289113A1 EP 16714365 A EP16714365 A EP 16714365A EP 3289113 A1 EP3289113 A1 EP 3289113A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- plasma
- coating material
- plasma device
- parameters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
- H01J37/32036—AC powered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
Definitions
- the invention relates to a method for the production of substrates with a plasma-coated surface and to an apparatus for carrying out the method according to the preambles of the independent claims.
- the particle bombardment is subsequently induced
- Activation of atoms and molecules from a solid surface in which a plasma is ignited in a vacuum by the action of an electric field, from which ions are accelerated onto a target, which ions strike atoms from the target, which then on the walls the vacuum chamber and precipitate on a substrate spaced from the target.
- a plasma is ignited in a vacuum by the action of an electric field, from which ions are accelerated onto a target, which ions strike atoms from the target, which then on the walls the vacuum chamber and precipitate on a substrate spaced from the target.
- a residual gas pressure usually predominantly an inert gas such as argon, which shows no disturbing influences on the layer forming on the substrate.
- Magnetron arrangements are often used to increase the ion current density.
- a heating of the material source is not necessary, but the target is usually cooled in the implementation of the process.
- the sputtering gas may additionally be mixed with reactive gases.
- residual gas may additionally be mixed with reactive gases.
- each electrode is alternately cathode and anode. This leads to a defined charge transport between cathode and anode without inhibiting influence of an oxide layer on the
- Target surfaces in contrast to the disturbing effect of the so-called “disappearing anode” in a reactive DC magnetron sputtering process.
- work is usually carried out in the so-called transition mode, since otherwise the oxide formation at the target surface is faster than the removal rate.
- excited sourceless plasma sources are also known in a frequency range between 1 MHz and 100 MHz, which may be lattice-free or have a plasma space enclosed by a grating, whereby the plasma is also normally subjected to a magnetic field in these plasma sources.
- an inductive plasma source operated in the radio frequency range is known in which, with a reduced number of system components, the plasma density is increased by permanent magnets arranged outside a vacuum chamber.
- DE 100 084 82 A1 discloses a plasma source operated in a high-frequency (HF) range with a magnetic field coil arrangement and a unit for extracting a plasma jet, superimposing a transverse magnetic field on an excitation electrode, and magnetic field coils around a plasma volume for generating a transverse magnetic field are arranged.
- HF high-frequency
- a capacitively coupled plasma source is known from EP 0 349 556 B1, according to which a plasma jet can be extracted, for example, for the removal and structuring of solid surfaces, for the production of surface dopants by particle bombardment or for the production of surface layers.
- Magnetic field allows a local increase in the plasma density and thus operation of the source at relatively low plasma pressures, wherein the generation of the magnetic field
- devices which have a combination of a sputtering device with a targetless plasma source, for example one of the plasma sources described above.
- EP 0 516 436 B1 is a combination of a magnetron sputtering device with a secondary plasma device for the reactive deposition of a material on a substrate.
- the sputtering device and the secondary plasma device each form sputtering and Activation zones that are atmospherically and physically adjacent.
- the plasmas of both zones are mixed into a single continuous plasma.
- EP 0 716 160 B1 discloses a coating device with a sputtering device and with a device for generating a plasma of low-energy ions.
- the sputtering and plasma devices can be selectively operated so that a
- Composite layer is formed, which has at least several layers.
- Composition of each layer may be selected from at least one of the following materials: a first metal, a second metal, an oxide of the first metal, an oxide of the second metal, mixtures of the first and second metals, and oxides of mixtures of the first and second metals.
- Sputtering device and at least a second constituent is a reactive component of the residual gas. It is envisaged that a reactive deposition of a layer with a predetermined stoichiometric deficit of the reactive constituent in a spatial region of the sputtering device on the substrate, a movement of the substrate with the deposited layer in a spatial region of a plasma source at a predetermined distance from the sputtering device is arranged in the vacuum chamber and a precise modification of the structure and / or stoichiometry of the layer by subsequent plasma action of the plasma source to reduce an optical loss of the layer takes place.
- a desired layer thickness of the deposited layer can via a
- Be set coating time for example, in situ using an optical layer thickness measurement by an optical monitor.
- Sputtering of the oxide is controlled by means of a lambda probe.
- Sputtering system produced a parabolic layer thickness distribution, which is called chordal effect. To compensate for this layer thickness distribution and for the production of uniform layers is proposed, the sputtering in the
- Treatment atmosphere moving workpieces regardless of their trajectory and - alignment targeted a desired layer thickness distribution can be realized. It is also proposed that in one modulation unit one, preferably two or more
- a method for producing magnetron sputter-coated substrates is also known from EP 1 552 544 B1, in which a magnetron magnetic field pattern along the sputtering surface is cyclically moved on a magnetron source with a sputtering surface, the substrate is moved away from and above the sputtering surface, being with the cyclic
- Movement of the magnetic field pattern phase locked the amount of material deposited per unit time on the substrate changes cyclically.
- one measures the material distribution currently stored on the substrate as a measured controlled variable compares it with a desired distribution and, in accordance with the comparison result, as
- Control difference the course of the phase-locked cyclic change as a manipulated variable in a control loop for the mentioned distribution.
- this method it is assumed that, in principle, in the case of a two-dimensional or three-dimensional cyclic movement of the magnetron magnetic field pattern, that component of motion which is perpendicular to the direction of movement of the substrate is decisive. With the known method is to be achieved in particular that one can do without aperture apertures.
- the known prior art merely aims to compensate for layer thickness distributions which deviate from desired distributions due to the chordal effect or mechanical inaccuracies of the installations. Deviations from one
- predetermined layer thickness distribution due to the individual plasma conditions of the deposition process as well as the varying thickness and varying dielectric properties of the deposited dielectric layer itself are not taken into account.
- Document DE 10 2013 101 269 A1 describes how, in the case of magnetron sputtering, a measurement of layer properties can be carried out, with transmission, reflection and / or sheet resistance measurements on certain traces on the substrate.
- the corresponding device comprises so-called gas channel segments, each with its own gas inlet for the separate coating of areas of the substrates.
- the following is carried out:
- the user can carry out an analysis of the layer at any location where influence on the layer properties can be made by changing the process gas quantity and composition. It is meant a location of the arrangement described in the document and not a location on the substrate.
- the document DE 102 34 855 A1 describes a device for setting a predetermined layer thickness distribution by means of a coating source, in which a passage opening for the vapor between the coating source and the substrates is delimited by at least two partial diaphragms movable to the transport direction of the substrate. Due to the design, no layer thickness distribution in the direction of movement of a substrate to be coated can be set with this device. It means
- Deposition process such as the electric field of the plasma boundary layer
- the observed layer thickness distribution depends, inter alia, on substrate support structures, such as the size and position of openings in which the substrates are housed, the material of the substrate and the substrate support, the speed at which the substrates are moved.
- the object of the present invention is to provide a method and a device, with which coating material on a surface of a substrate with a low
- Deviation from a predetermined layer thickness distribution in the direction of movement of the substrate can be deposited, and also deviations that can be considered and compensated by the individual plasma conditions of the deposition process.
- the object is achieved with the features of the independent claims.
- Vacuum chamber which has a powered with an alternating current plasma device, with
- Coating area along a lying on the surface of the substrate trajectory means of the plasma device characterized by a) determining actual values of a layer thickness of deposited
- Coating material on at least parts of the trajectory in the direction of movement of the substrate b) Comparison of the actual values with target values of the layer thickness on the at least parts of the trajectory c) Determining parameters of the plasma device for changing the amount of coating material deposited per unit time as a function of the position such that the actual values of the layer thickness of deposited coating material deviate less than a predetermined difference from the target values, and d) setting parameters of the plasma device for changing the amount of coating material deposited per unit time according to item c) e) deposition of coating material by means of the plasma device with the parameters set in point d).
- the method involves moving a substrate relative to the plasma device by means of a movement device along a curve.
- a movement device By means of the plasma device is
- Coating material deposited on a surface of the substrate in a coating area along a lying on the surface of the substrate trajectory is here understood as trajectory the path or the path of movement of the coating area when moving the substrate relative to the plasma device.
- the coating area is determined by the coating window of the
- the coating window here is a surface which is at a distance from the plasma device and on which coating material is deposited when the substrate is not moved relative to the plasma device.
- the actual values of the layer thickness of deposited coating material deviate less than a predefined difference from the desired values of the layer thickness. Additional coating material is thus deposited as a function of the difference between actual values of the layer thickness and the desired values.
- desired values are selected which correspond to a uniform layer thickness.
- desired values are selected which correspond to a uniform layer thickness.
- the plasma device can have an aperture diaphragm which is known per se, in order additionally to achieve a uniform layer thickness distribution perpendicular to the direction of movement of the substrate. With such an aperture diaphragm, however, it is not possible to correct the layer thickness distribution in the direction of movement of the substrate.
- Plasma conditions of the deposition process is dependent.
- the self-bias in a dielectric substrate is affected by the substrate thickness as well as the accumulation of surface charges, which in turn are determined by the plasma conditions.
- the self-biasing process regenerates the growing layer and thus influences the layer thickness distribution and other properties of the deposited layer.
- Moving direction of the substrate which are due to the changing during the movement of the substrate individual plasma conditions of the deposition process and by the varying thickness and varying dielectric properties of the deposited dielectric layer itself. This is possible because additional Coating material is deposited as a function of the difference between actual values of the layer thickness and the target values, regardless of the cause of the difference.
- the actual values of the layer thickness on at least parts of a trajectory lying on the surface of the substrate are constantly approximately equal to the desired values of the layer thickness.
- the actual values are compared with target values of the layer thickness and parameters of the plasma device are determined in order to change the amount of coating material (coating rate) deposited per unit time as a function of the position of the substrate.
- the position of the substrate preferably corresponds to a position of the coating window of the plasma device relative to
- the invention contemplates that upon operation of the plasma device with plasma excitation with RF (13.56 MHz) and MF (40KHz), a self-bias is imposed on the substrate based on the geometry and material of the environment of the substrate as well as the electrical charge the environment and the substrate is dependent.
- Coating material of elements such as Si and Al, Mg and their oxides and nitrides is significantly stronger than Nb, Hf and Ta and their oxides and nitrides, in which the layer thickness edge drop was below the detection limit.
- Substrates with a diameter of 200mm a layer thickness edge drop of 2% - in contrast to a layer thickness edge drop of 0.6% at MF.
- the plasma device is operated with RF or MF or the deposition is carried out by means of a stimulated with RF or MF plasma.
- the invention makes it possible to substantially reduce the layer thickness edge drop in flat substrates, for example, in sputtering of SiO 2 with RF plasma excitation in a substrate with a
- Diameter of 200mm from 2% to 0.5%.
- the invention thus makes it possible in a simple manner to take into account the influence of geometry and material of the substrate environment on the deposition process.
- the mechanical and electrical structure of the plasma device as well as the Vacuum chamber easier and cheaper, since you no longer have to pay attention in the design of the plasma device and / or vacuum device, which set electrical potentials in the deposition process, but by determining and setting parameters of the plasma source according to point c) and d) per unit time Deposited amount of coating material advantageously changes the influence of
- Layer thickness is controlled, in the present invention, if the determined actual values of the layer thickness differ not less than the predetermined difference from the target values, the plasma device is operated such that the deposited amount of
- Coating material is changed until the actual values of the layer thickness deviate less than a predetermined difference from the target values.
- An embodiment of the method according to the invention is characterized in that parameters of the power supply and / or parameters of the gas supply of
- Plasma device and / or parameters of the plasma emission of the plasma device according to point d) can be adjusted.
- the plasma device can be controlled or regulated to the deposition rate and / or other layer properties, such as
- Another embodiment of the method is characterized by determining the actual values by measuring in situ in the vacuum chamber according to point a).
- the determination of the actual values by measuring in-situ in the vacuum chamber has the advantage that a removal of the substrate from the vacuum chamber and the associated expense can be avoided and thus increases the process reliability and the process time can be reduced.
- the determination of the actual values in situ can take place, for example, by means of an optical monitoring system.
- the comparison is made in accordance with point b). If the actual values of the layer thickness of deposited coating material deviate less than a predetermined difference from the desired values, the substrate can be further processed, in particular removed from the vacuum chamber. Otherwise, point c) and point d) and a further deposition of coating material take place.
- Another embodiment of the method is characterized by removing the
- the measurement of the actual values preferably takes place spectrally-ellipsometrically with a spectral ellipsometer. After the actual values have been measured, the comparison is made in accordance with point b). If the actual values of the layer thickness of deposited
- the substrate can be further treated, optionally in or outside the
- a further embodiment of the method is characterized in that the parameters of the power supply are an electrical current, an electrical voltage, an electrical power and / or a plasma impedance.
- the parameters of the power supply are an electrical current, an electrical voltage, an electrical power and / or a plasma impedance.
- an electrical current, an electrical voltage, a plasma impedance and / or an electric power are changed or modulated as a function of the position of the substrate.
- a further embodiment of the method is characterized in that the parameters of the gas supply to the plasma device are a working gas flow and / or a reactive gas flow into the plasma device or into a space between
- Plasma device and substrate acts.
- Plasma device is designed as a sputtering source with one or more sputtering cathodes (sputtering targets) or has such a sputtering source and the deposition takes place as sputtering.
- the sputter source can be controlled.
- the sputtering source can be operated in particular, as known per se, in the metallic or in the reactive mode or by a commutation of the reactive discharge between the metallic mode and the reactive mode.
- the sputter source can also be actively regulated.
- an electric power of the sputtering cathode or the sputtering cathodes, and thus the deposition rate, is changed or modulated depending on the position of the substrate.
- the electrical power is modulated according to a triangular profile, a rectangular profile, a sine profile, a Sin 2 profile or a pulse profile. It is understood that these profiles are also used in other plasma devices as sputtering sources for
- Power modulation can be used.
- Another embodiment of the method is characterized in that the deposition takes place by means of a plasma device which is designed as a targetless plasma source or has such a plasma source.
- Another embodiment of the method is characterized by deposition by means of a sputtering source and additional plasma treatment of the substrate, as is known per se from EP 1 592 821 A2.
- the sputtering source can also be operated in the metallic mode or in the reactive mode.
- the use of the method is particularly advantageous for deposition by means of a sputtering source and an additional plasma treatment of the substrate, since the additional plasma treatment can greatly influence the plasma conditions, in particular the electrical potentials during the deposition process.
- Another embodiment of the method is characterized by moving the substrate along a linear curve, such as in an in-line system.
- a linear curve such as in an in-line system.
- a trained as a circle or arc curve This can be done for example by means of a turntable or cylinder system.
- Another embodiment of the method is characterized by moving the substrate along a curve that is equidistant from the plasma device.
- Another embodiment of the method is characterized by moving the substrate along a curve which is non-equidistant with respect to the plasma device,
- Another embodiment of the method is characterized by the use of a disc-shaped substrate.
- Another embodiment of the method is characterized by using a disc-shaped substrate having a largest linear dimension or a largest one Diameter smaller than a coating window of the plasma device.
- Coating window is here referred to a spaced-apart from the plasma device surface on the at not relatively moving relative to the plasma device substrate
- Coating material is deposited.
- Coating material can be used on a substrate for which the actual values of a layer thickness have been determined, but that also the deposition of
- Coating material on some or all of the other substrates can be done with the set parameters of the plasma device.
- Layer thickness profiles are coated with the same parameters of the plasma device when they are located at equivalent positions of the moving device.
- the set parameters can then be saved as a process profile.
- a coating system provided with a plasma-coated surface of a dielectric coating material substrates provided in a vacuum chamber by a coating system, wherein the coating plant has a powered with an alternating current plasma device.
- Controlling the moving means wherein the plasma source or the substrate by means of the controlled moving means based on the as operating configuration associated stored process profile is moved along a contour of the surface relative to the surface of the substrate,
- Control module based on the surface classification and a
- Plasma source parameter profile of the process profile that characterizes the correlation between the surface classification and the plasma source control signal
- a vacuum chamber having an alternating current operated plasma device comprising moving means for moving a substrate relative to the plasma device along a curve, wherein by means of the plasma means depositing coating material on a surface of the substrate in a coating area along one on the surface of the substrate lying trajectory is characterized by a control module that is designed and set up for a1) determining actual values of a layer thickness of deposited
- the device has the corresponding advantages of the method according to the invention.
- Figure 1 is a sketch of a preferred apparatus for sputter coating of substrates
- FIG. 2 shows a block diagram of a device according to the invention for carrying out the method according to the invention
- FIG. 4 shows position-dependent power modulation for compensating the
- Figure 1 shows a schematic representation of a preferred device 1 for
- the device 1 is arranged in a vacuum chamber, not shown.
- the device 1 comprises a process module 25 with an alternating-current-operated plasma device, which is designed as a sputtering source 31, and with a plasma source 32.
- the device 1 further comprises an optional
- the turntable device 20 can receive a plurality of substrates which are moved about the axis Z.
- the substrates 10 may, for example, be accommodated in suitable openings of an annular substrate turntable 21.
- the substrate turntable 21 can be loaded or unloaded via a lock 28 with substrates.
- a heating device 27 the substrates can be heated, wherein the heating device 27 is preferably designed as a radiant heater with quartz heaters.
- the substrates can be heated to several 100 °, for example to 250 ° C.
- the movement device 20 can preferably be operated at an adjustable speed of the turntable 21 between 1 and 500 rpm. Instead of a planar one
- Movement device can also be a known per se drum-shaped device for moving the or the substrates are used.
- the sputtering source and the plasma source are associated with a peripheral surface area of the drum.
- a movement device for moving a substrate along a linear curve can also be provided.
- the sputtering source 31 is preferably a magnetron source, more preferably a
- the (not shown) power supply of the sputtering source 31 is preferably a medium frequency (MF) - or radio frequency (RF) - or a DC pulse - supply unit, via a
- Matching network are coupled to the sputtering cathodes.
- Voltage ranges of the sputtering cathodes used are 400-800 V.
- a 13.56 MHz RF sputtering source and / or a 40KHz MF source is employed.
- Preferred is a power output to the sputtering cathodes in the range between 500W and 20kW.
- the Power scales with the area of the cathode up to a maximum value of about
- the sputtering source 31 can be operated in a known metallic mode, a reactive mode or in transition mode.
- Preferred sputtering materials are metals and their oxides and nitrides such as Al, Mg, Zr, Hf, Ta as well as semiconductors such as Si and their oxides and nitrides.
- the plasma source 32 generates a plasma containing excited ions and radicals of a residual gas.
- the residual gas includes an inert gas such as argon and optionally one or more reactive ingredients such as oxygen or nitrogen.
- the plasma modifies the layers of coating material deposited on the substrate by the sputtering source 31.
- the plasma source 31 may be, for example, a DC, RF, or DC pulse or DC + RF plasma source device.
- the ion energy of the plasma produced by means of the plasma source 32 is adjustable, preferably in a range between 10 EV 200 EV or even 400 EV.
- an ECWR plasma source is used, in which the energy of the plasma particles can be set largely independently of the plasma density in the plasma source.
- sputter sources and / or plasma sources are provided in the vacuum chamber.
- optical measuring device arranged for optical monitoring, by means of which the optical properties of the deposited coating material can be determined.
- transmission and / or reflection are preferred
- the optical measuring device is a layer thickness measuring device, particularly preferably a spectrophotometer, ellipsometer or a spectral ellipsometer, with which actual values of the layer thickness in situ can be determined selectively or along a trajectory.
- the substrate 10 is removed from the turntable device 20 under the
- Sputtering source 31 moves, wherein coating material is deposited in a coating area along a lying on the surface 1 1 trajectory.
- the coating window has a larger area than the substrate. It is understood that the invention can also be used with substrates in which the substrate has the same or larger area than the coating window.
- the substrate is moved on in a circular fashion by the turntable device 20 and reaches the plasma source 32 at a certain point in time, wherein an additional plasma treatment can take place.
- a further oxidation of the deposited coating material can take place, as described in detail in the Applicant's EP 1 198 607 B1. Subsequently, a further deposition of coating material by means of the sputtering source 31 can take place.
- FIG. 2 shows a device for carrying out the method according to the invention with a plasma device 150, a movement device 160 and a control module 140.
- the plasma device 150 and the movement device 160 can, as in the
- the control module 140 includes a computing module 141 and a computing module 141 .
- the device further comprises a layer thickness measuring device 110, a presetting device 120 and a comparison device 130.
- Vacuum chamber configured and designed device shown, wherein a determination of actual values of a layer thickness of deposited coating material on at least parts of a trajectory 105 in a removed from the vacuum chamber substrate 100 takes place.
- the trajectory is usually curved in accordance with the orbital motion of the substrate.
- the determined measured values are supplied to the comparison device 130 and compared with the desired values stored in the default device 120 and made available to the comparison device 130.
- the comparing means 130 supplies a comparison result between the actual values and the target values to the control module 140.
- a position sensor 155 may detect a position of a substrate.
- an edge of a substrate can also be detected, with the knowledge of a speed of the substrate, in particular of the rotational speed of a turntable, allowing precise determination of the position of the substrate to be carried out by the control module 140.
- the calculation module 141 of the control module 140 determines parameters of the plasma device 150 in order to change the amount of coating material deposited per unit time such that the actual values of the layer thickness of deposited coating material deviate less than a predetermined difference from the desired values. This can be done by assigning the actual values and the desired values to specific locations on the trajectory 105. In an installation, as in the exemplary embodiment illustrated in FIG.
- the calculation module 141 of the control module 140 determines parameters of the plasma device 150 in order to change the amount of coating material deposited per unit time depending on the position of the substrate such that the actual values of the layer thickness of the deposited coating material are less than the predetermined difference from the target value. Values differ, it being understood that a certain coating time or at a
- Turntable device is associated with a certain number of coating passes of the substrate.
- the control module 140 then adjusts the parameters of the plasma device by means of the adjustment module 142 to the values which are determined by means of the calculation module 141.
- the substrate is brought back into the vacuum chamber and moved with the movement device 160, deposition of coating material taking place by means of the plasma device 150 with the set parameters.
- the power supplied by a power supply is modulated by the control device 140 as a function of the position of the substrate, wherein it is preferred in a sputtering device if the sputtering power is modulated according to a triangular profile, a rectangular profile, a sinusoidal profile, a sin 2 profile or a pulse profile.
- substrates can be identical Diameter, same substrate thickness and the same material with the same parameters of the plasma device are coated.
- the process can be carried out if the determination of the actual values of the deposited coating material takes place in situ in the vacuum chamber, wherein, of course, the removal of the substrate when determining the actual values is omitted.
- selectable process profile by means of a memory module of the control module 140.
- one of the provided process profiles is selected by means of a
- Input unit of the control module 140 wherein the selected process profile is assigned to the control module 140 as an operating configuration. Then, the movement means 160 is moved in accordance with the associated stored process profile along a contour 105 of the surface relative to the surface 101 of the substrate 100.
- measuring parameters are acquired at at least one measuring point of the contour 105 on the surface 101 of the substrate 100 by means of a measuring sensor of the system.
- the material characteristic parameters determined by the sensor are quantified by the control module 140 on the basis of predefined ones
- Material characteristic parameter ranges based on the material characteristic parameters.
- a plasma source control signal is generated by a computing module of the control module 140 based on the surface classification and a
- Plasma source parameter profile of the process profile which characterizes the correlation between the surface classification and the plasma source control signal.
- the plasma source is controlled by means of the plasma source control signal
- FIG. 3 shows a further embodiment of the invention, wherein in a sputter-up configuration a dual magnetron 180 is shown, which is arranged underneath a substrate plate 190 of a movement device which is not otherwise shown in any more detail.
- an inert gas container 220 for example argon
- a reactive gas container 230 for example oxygen
- an inert gas or a reactive gas can be introduced into the interior of the vacuum chamber 170 via gas inlets 210 and 21 1.
- An inert gas and reactive gas flow may depend on measured values of a sensor 200, for example a
- Lambda probe whose signal is evaluated by a sensor evaluation device 202 and a control or regulating device 240 is supplied, are set. It is understood that the vacuum chamber 170 also has pumping means, which are not shown for simplicity.
- the magnetron 180 is connected to a power supply 170 via an unrepresented matching network.
- Substrate support plate 190 attached, but not shown, substrate are determined.
- the position sensor 250 may detect a peripheral edge of a substrate. If the rotational speed of the turntable is known, an accurate position determination of the substrate by the control module 140 can be carried out on this basis.
- the embodiment further includes, but not shown in Figure 3, components for determining the actual values and target values of deposited coating material on the substrate or substrates and a comparison device for comparing the actual values with the desired values on at least parts of the Surface of the substrate lying trajectory.
- the power supplied by the generator 170 to the dual magnetron 180 is preferably modulated by the control device 140 as a function of the position of the substrate.
- the magnetron sputtering source 180 can be controlled via the control device 240 or regulated using measured values of the sensor 200.
- FIG. 4 shows plots of measurement results of layer thickness distributions of deposited coating material on circular planar substrates by means of a device as shown in FIG. 1, the ordinate indicating the layer thickness with respect to an arbitrary value 100 and the abscissa indicating the position on a trajectory on the surface is indicated by a diameter of the circular substrate.
- Zero point corresponds to the center of the circular substrate.
- the areas to the left and right of the zero point correspond to positions on a trajectory in the direction of movement of the substrate.
- the layer thickness measurements were ex situ.
- the curves show results of layer thickness measurement of silicon dioxide deposited by controlled RF sputtering.
- the curve labeled 400 corresponds to a deposition with a constant sputtering power of 10,000W.
- the curve 400 shows a maximum of the layer thickness in the region of the center of the substrate for the deposited layer with a decrease to the edges left and right by more than 2%.
- the curve 401 shows measured values for SiO 2 deposited according to the method according to the invention, wherein a modulation of the sputtering power, which is dependent on the position of the substrate below the center of the sputtering source, was used. It was the of the
- Modulation of the sputtering power according to the invention resulted in an increased coating rate in the edge regions with which the reduced coating thickness otherwise occurring in the edge regions was compensated.
- FIG. 5 shows a representation of the sputtering power used in the deposition of FIG. 4 as a function of a position on a trajectory on the surface of the substrate, the zero point corresponding to the zero point in FIG.
- the substrate is moved through the deposit under the sputtering source.
- a certain position on the abscissa in Figure 5 thus corresponds to a time at which the center of the sputtering source is above the position in question.
- the curve labeled 500 corresponds to a constant sputtering performance, as is common in the prior art.
- the curve 501 corresponds to the
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PCT/EP2016/057065 WO2016156496A1 (de) | 2015-03-31 | 2016-03-31 | Verfahren zur herstellung von beschichteten substraten |
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US (1) | US11814718B2 (de) |
EP (1) | EP3289113A1 (de) |
JP (1) | JP6707559B2 (de) |
CN (1) | CN107532290B (de) |
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JP7226710B2 (ja) * | 2018-02-16 | 2023-02-21 | Tdk株式会社 | 磁気抵抗効果素子及びその製造方法 |
TWI794475B (zh) * | 2018-05-09 | 2023-03-01 | 德商索萊爾有限公司 | 用於接收多個基板以進行處理之保持裝置、處理系統及方法 |
KR20210011974A (ko) * | 2018-05-17 | 2021-02-02 | 에바텍 아크티엔게젤샤프트 | 기판 처리 방법 및 진공 증착 장치 |
EP3663431A1 (de) * | 2018-12-06 | 2020-06-10 | Singulus Technologies AG | Verfahren zur substratbeschichtung |
DE102018133062A1 (de) | 2018-12-20 | 2020-06-25 | Optics Balzers Ag | Verfahren zur Herstellung eines linear variablen optischen Filters |
DE102019200761A1 (de) * | 2019-01-22 | 2020-07-23 | TRUMPF Hüttinger GmbH + Co. KG | Verfahren zur Kompensation von Prozessschwankungen eines Plasmaprozesses und Regler für einen Leistungsgenerator zur Versorgung eines Plasmaprozesses |
JP2020164927A (ja) * | 2019-03-29 | 2020-10-08 | 芝浦メカトロニクス株式会社 | 成膜装置 |
ES2955578T3 (es) * | 2019-09-09 | 2023-12-04 | Sturm Maschinen & Anlagenbau Gmbh | Dispositivo de revestimiento y procedimiento de revestimiento metálico de piezas de trabajo |
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JP2023051251A (ja) * | 2021-09-30 | 2023-04-11 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
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- 2016-03-31 TW TW105110515A patent/TWI624552B/zh active
- 2016-03-31 EP EP16714365.0A patent/EP3289113A1/de active Pending
- 2016-03-31 US US15/563,129 patent/US11814718B2/en active Active
- 2016-03-31 WO PCT/EP2016/057065 patent/WO2016156496A1/de active Application Filing
- 2016-03-31 CN CN201680024331.6A patent/CN107532290B/zh active Active
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US20180087142A1 (en) | 2018-03-29 |
TW201702408A (zh) | 2017-01-16 |
WO2016156496A1 (de) | 2016-10-06 |
JP6707559B2 (ja) | 2020-06-10 |
JP2018511705A (ja) | 2018-04-26 |
US11814718B2 (en) | 2023-11-14 |
CN107532290A (zh) | 2018-01-02 |
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