EP3260831B1 - Capteur de force à faible coût - Google Patents

Capteur de force à faible coût Download PDF

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Publication number
EP3260831B1
EP3260831B1 EP17176511.8A EP17176511A EP3260831B1 EP 3260831 B1 EP3260831 B1 EP 3260831B1 EP 17176511 A EP17176511 A EP 17176511A EP 3260831 B1 EP3260831 B1 EP 3260831B1
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EP
European Patent Office
Prior art keywords
sense die
cavity
actuation element
diaphragm
cover member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP17176511.8A
Other languages
German (de)
English (en)
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EP3260831A1 (fr
Inventor
Richard Wade
Alistair David Bradley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
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Filing date
Publication date
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Publication of EP3260831A1 publication Critical patent/EP3260831A1/fr
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Publication of EP3260831B1 publication Critical patent/EP3260831B1/fr
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate

Definitions

  • WO2015/065639A1 discloses a force sensor having a substrate with a flip-chip mounted force sensing die. A force transfer member is located on a thinned backside region of the dies, and a cover to capture the force transfer member in a cavity. The cover may be mounted to through holes in the substrate.
  • EP2270455A2 discloses a force sensor with a spherical actuator and a cover. The cover can be mounted on the substrate using adhesive and may have a flexible membrane integrated with it.
  • EP1519173A1 discloses a force sensor with a diaphragm and force transmitting means, with a force transmitting means positioning structure. The structure provides a guide member, in the form of a through hole.
  • US2013/0247689A1 discloses a force sensor including a sense die mounted to a substrate.
  • a protective housing for receiving a force receiving feature may be attached to the substrate.
  • the force receiving feature may be in contact with a boss on the sense die.
  • DE102008037572A1 discloses a force sensor that has a ceramic body within a housing.
  • the housing is provided with a lid, which has an opening in the center. Through this opening protrudes a dome surface of the steel ball. The portion protruding through the opening forms a force introduction portion.
  • a low cost small force sensor which includes a sense die assembly, and techniques for manufacturing the sense die assembly and the force sensor, as well as techniques for operation of the force sensor.
  • a sense die assembly which can include a sense die having a top side and a bottom side, wherein the sense die includes a cavity and a diaphragm formed therein by etching, and one or more sensing elements positioned on a bottom side of the diaphragm; an actuation element placed in the cavity of the sense die and in contact with a top side of the diaphragm and with a wall of the cavity; and a cover member formed on the top side of the sense die, wherein the cover member includes an opening positioned over the cavity of the sense die, wherein a portion of the actuation element extends through the opening, wherein the cover member provides wafer-level retention of the actuation element in the cavity.
  • the method includes etching a stack of bonded silicon wafers to form a sense die having a cavity and a diaphragm; placing an actuation element into the cavity such that the actuation element contacts a top side of the diaphragm; and bonding or growing a cover member on the top side of the sense die, wherein the cover member has an opening through which the actuation element extends, and wherein the cover member holds the actuation element within the cavity.
  • a sense die assembly comprising the sense die, the actuation element, and the cover member can be flip chip bonded to a substrate, or vice versa.
  • Disclosed herein are a sense die assembly and methods for manufacturing the sense die assembly.
  • the disclosed assembly, sensor, and methods utilize wafer-level retention to hold an actuation element in a cavity of the sense die.
  • the force sensor is only slightly larger than the sense die itself, and the force sensor is useful in applications in which 25 mm 2 or less of a footprint area is available for a force sensor.
  • the force sensors 100 and 200 may each include a substrate 110, a sense die 120 having a cavity 124 formed therein and a diaphragm 122 connected to the substrate 110, an actuation element 130 or 230 placed in the cavity 124 of the sense die 120, and a cover member 140.
  • One or more sensing elements 160 can be positioned on a bottom side 127 of the diaphragm 122 of the sense die 120.
  • the sense die 120, the actuation element 130 or 230, and the cover member 140 can be collectively referred to as the sense die assembly 150 of the force sensor 100 or 200.
  • the sense die 120 can have a top side 121 and a bottom side 123.
  • Reference to bottom side 123 and top side 121 of the sense die 120 is for clarity of reference to the illustrations in the figures, and it is not intended that the top side 121 of the sense die 120 always faces upward, nor is it intended that the bottom side 123 always faces downward.
  • various etching techniques may be performed by referring to the top side 121 as the "back side” of the sense die 120 and by referring to the bottom side 123 as the "front side" of the sense die 120.
  • the sense die 120 can be formed from a stack of bonded silicon wafers, which in Figure 1 and Figure 2 is a stack of two wafers 170 and 171 bonded together. As can be seen in Figure 1 and Figure 2 , wafer 171 can be stacked on top of the wafer 170.
  • the cavity 124 (discussed in more detail below) is etched in the sense die 120 such that wafer 170 has a portion 172 which can act as the diaphragm 122 of the sense die 120.
  • the portion 172 of the wafer 170 which can act as the diaphragm 122 can be where the sensing elements 160 are placed/formed on the diaphragm 122.
  • the wafer 170 can have a thickness T1 which is less than a thickness T2 of wafer 171.
  • the cover member 140 likewise can have a thickness T3 which is less than a thickness T2 of the wafer 171.
  • the thickness T1 of wafer 170 can be of a value sufficient for wafer 170 to function as a diaphragm 122 of the sense die 120 (e.g., equal to or less than 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm).
  • the thickness T2 of wafer 171 can be of a value sufficient for etching a cavity 124 which can receive the actuation element 130 or 230 (e.g., equal to or less than 5 mm, 4 mm, 3 mm, 2 mm, 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm).
  • the thickness T3 of the cover member 140 can be of a value sufficient to provide rigidity for retention of the actuation element 130 or 230 in the cavity 124 (e.g., equal to or less than 3 mm, 2 mm, 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm).
  • the sense die 120 is shown in Figure 1 and Figure 2 as formed from a stack of two bonded silicon wafers 170 and 171, in the present invention the sense die 120 is formed of a single wafer.
  • the cavity 124 and diaphragm 122 can be suitably formed in the sense die 120 via etching or grinding the wafer or stack of wafers to get the diaphragm thickness desired (e.g., about ⁇ 100 microns or smaller). In such configuration, a cavity 124 would be formed such that the cavity 124 has a depth and the diaphragm 122 has a thickness of suitable values as disclosed herein.
  • the sense die 120 can have a footprint area (as viewed in a direction of arrow A) in a range of about 2.5 mm 2 (e.g., about 1.6 mm x 1.6 mm) to about 25 mm 2 (e.g., about 5 mm x 5 mm); alternatively, in a range of about 4 mm 2 (about 2 mm x 2 mm) to about 25 mm 2 (about 5 mm x 5 mm).
  • the sense die 120 can be made of any suitable material(s), for example, silicon.
  • the cavity 124 of the sense die 120 is formed by etching and is defined by the top side 125 of the diaphragm 122, one or more walls 126 (e.g., which are residual portions of silicon wafer 171 after etching is performed), and a portion 141 of the cover member 140 which defines a top wall 142 of the cavity 124.
  • the cavity 124 can have a width of about 0.1 mm. Additionally, the cavity 124 can have a depth T2 of a value suitable for receiving the actuation element 130 or 230.
  • the cavity 124 can be cylindrical in shape, cuboid in shape, or can have any other shape suitable for receiving the actuation element 130 or 230. Figure 1 and Figure 2 show the cavity 124 can have a cylindrical shape.
  • the diameter D1 of the cavity 124 can be large enough to receive the actuation element 130 or 230 therein (e.g., equal to or less than 3 mm, 2 mm, 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm).
  • Figure 1 and Figure 2 show the cavity 124 which can be formed by deep reactive ion etching (DRIE).
  • DRIE deep reactive ion etching
  • the diaphragm 122 of the sense die 120 has a top side 125 and a bottom side 127.
  • the diaphragm 122 can be formed in the sense die 120 by etching techniques known in the art and/or disclosed herein (e.g., deep reactive ion etching) or grinding techniques known in the art and/or disclosed herein.
  • Reference to top side 125 and bottom side 127 of the diaphragm 122 is for clarity of reference to the illustrations in the figures, and it is not intended that the top side 125 of the diaphragm 122 always faces upward, nor is it intended that the bottom side 127 of the diaphragm 122 always faces downward.
  • top side 125 of the diaphragm 122 and the top side 121 of the sense die 120 is intended to reference orientation of top side 125 and top side 121 in the same direction
  • bottom side 127 of the diaphragm 122 and the bottom side 123 of the sense die 120 is intended to reference orientation of bottom side 123 and bottom side 127 in the same direction.
  • the diaphragm 122 can have a thickness T1 sufficient for use in force sensors. Additionally or alternatively, the thickness T1 of the diaphragm 122 can be of a value such that the diaphragm 122 can deflect in response to a force applied to the actuation element 130 or 230 in the direction of arrow A. As discussed in more detail below, the sensing element(s) 160 can be formed/placed on the bottom side 127 of the diaphragm 122.
  • the diaphragm 122 can be fabricated by back-side etching a silicon die (e.g., made of a single silicon wafer or a stack of bonded silicon wafers 170 and 171 as discussed herein) with an etching technique disclosed herein.
  • the diaphragm 122 can be the portion of the silicon wafer(s) which is remaining after deep reactive ion etching (DRIE) of the cavity 124 in the sense die 120.
  • DRIE deep reactive ion etching
  • the sense die 120 can have one or more sensing elements 160 located on a bottom side 127 of the diaphragm 122.
  • the sensing elements 160 can be one or more piezoresistive elements or components and/or other circuitry (e.g., trim circuitry, signal conditioning circuitry, etc.) formed using suitable fabrication or printing techniques.
  • the sensing elements 160 can be configured to have an electrical resistance that varies according to an applied mechanical force (e.g., deflection of the diaphragm 122) in the direction of arrow A.
  • the sensing elements 160 can be formed of a silicon piezoresistive material.
  • the sensing elements 160 can be any other suitable sensing elements formed of any suitable material, silicon or non-silicon based.
  • Sensing elements 160 in the form of piezoresistive elements can be connected in a Wheatstone bridge configuration (e.g., a full or half bridge configuration).
  • the one or more sensing elements 160 can sense a deflection of the diaphragm 122 in response to an applied force in the direction of arrow A.
  • the cover member 140 is positioned on the top side 121 of the sense die 120.
  • the cover member 140 has an opening 146 positioned over at least a portion of the cavity 124 of the sense die 120 and through which the actuation element 130 or 230 extends.
  • the opening 146 is defined by the portion 141 of the cover member 140 which extends over another portion of the cavity 124.
  • the portion 141 of the cover member 140 (and thus the opening 146), as viewed in the direction of arrow A, may have any shape configured to hold the actuation element 130 or 230 within the cavity 124 of the sense die 120 while allowing a portion 132 or 232 of the actuation element 130 or 230 to extend past the top side 143 of the cover member 140.
  • the portion 141 and opening 146 can have a circular shape, a rectangular shape, a square shape, an oval shape, a triangular shape, a pentagonal shape, a hexagonal shape, and so on.
  • a diameter D2 of the opening 146 is generally less than the diameter D1 of the cavity 124.
  • the cover member 140 holds the actuation element 130 or 230 within the cavity 124 of the sense die 120 and provides wafer-level retention of the actuation element 130 or 230 in the sense die assembly 150. That is, a portion 141 of the cover member 140 may define a top wall 142 of the cavity 124 for retaining the actuation element 130 or 230.
  • the opening 146 may be precisely formed with respect to the dimensions of the actuation element 130 or 230 (e.g., the dimensions of the ball bearing in Figure 1 or the cylindrical pin in Figure 2 ) so as to maintain a relatively constant point of contact between the actuation element 130 or 230 and the sensing diaphragm 122.
  • the cover member 140 is disposed on the top side 121 of the sense die 120.
  • the cover member 140 is not attached directly to the substrate 110.
  • the cover member 140 in the form of a silicon, glass, metal, ceramic, or plastic wafer may be attached or connected to the top side 121 of the sense die 120 through bonding.
  • the bonding or connection of the cover member 140 to the sense die 120 may be achieved by using a suitable adhesive or any other suitable bonding mechanism (e.g., glass frit, solder, eutectic, fusion bonding, anodic bonding, etc.).
  • the cover member 140 may be of a material substantially the same as the sense die 120; alternatively, a different material.
  • the cover member 140 is formed as a layer of silicon or silicon oxide on the top side 121 of the sense die 120 by growing crystals of silicon or silicon oxide through standard lithography growth patterns.
  • opening 146 of the cover member 140 is shown in Figure 1 and Figure 2 as centered over the cavity 124, it is contemplated that the opening 146 may be positioned off-center with respect to the cavity 124 or at any location such that at least a portion of the opening 146 facilitates the extension of the actuation element 130 or 230 therethrough for transmitting a force to the diaphragm 122 such that the sensing elements 160 generate electrical signals.
  • Figure 1 and Figure 2 show the force sensor 100 and 200 including an actuation element 130 for transmitting an external force to the sense die 120.
  • the actuation element 130 is placed in the cavity 124 of the sense die 120 and in contact with i) a top side 125 of the diaphragm 122, ii) wall 126 of the cavity 124, and iii) a top wall 142 of the cavity 124 defined by the portion 141 of the cover member 140 which is positioned over a portion of the cavity 124.
  • the actuation element 130 in Figure 1 is in the form of a ball bearing.
  • the actuation element 130 is received by the top side 125 of the diaphragm 122 and the wall 126 of the cavity 124.
  • the diameter D5 of the actuation element 130 can be slightly smaller than the diameter D1 of the cavity 124 (e.g., slightly smaller than 3 mm, 2 mm, 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm).
  • the diameter D5 of the actuation element 130 can be 0.1 mm.
  • the actuation element 230 in Figure 2 is in the form of a cylindrical pin having a cylindrical shape.
  • the cylindrical pin can include a first portion 231 and a second portion 232.
  • the first portion 231 has a diameter D3 which can be equal to or less than 3 mm, 2 mm, 1 mm, 0.9 mm, 0.8 mm, 0.7 mm, 0.6 mm, 0.5 mm, 0.4 mm, 0.3 mm, 0.2 mm, or 0.1 mm.
  • the diameter D3 can be larger than a diameter D4 of the second portion 232.
  • the diameter D3 of the first portion 231 can also be larger than the opening 146 in the cover member 140 through which the second portion 232 of the actuation element 230 (the cylindrical pin) extends.
  • the diameter D3 of the first portion 231 can be slightly smaller than the diameter D1 of the cavity 124, and the diameter D4 of the second portion 232 can be slightly smaller than the diameter D2 of the opening 146. Because the diameter D3 of the first portion 231 is larger than the diameter D4 of the second portion 232, the cylindrical pin has a lip 233 which abuts the top wall 142 of the cavity 124 (which is defined by the portion 141 of the cover member 140). Contact of the lip 233 with the top wall 142 retains the actuation element 230 in the cavity 124.
  • the actuation element 130 or 230 extends from the top side 125 of the diaphragm 122 to the top wall 142 formed by the cover member 140.
  • the actuation element 130 or 230 can be positioned (and the cavity 124 can be formed) at any position on the sense die 120.
  • actuation element 130 or 230 and the cavity 124 can be substantially centered relative to the sensing elements 160 or may be positioned at any other location on the diaphragm 122 relative to the sensing elements 160.
  • the actuation element 130 or 230 is placed in the cavity of the sense die 120 before placing the cover member 140 on the sense die 120.
  • the substrate 110 can be any surface to which the sense die assembly 150 can be mounted.
  • the substrate 110 may include ceramic material (e.g., alumina), which may have similar temperature expansion coefficients.
  • the substrate 110 can include any other suitable materials (e.g., a printed circuit board (PCB)).
  • PCB printed circuit board
  • the bottom side 123 of the sense die 120 (and the bottom side 127 of the diaphragm 122) can be flip chip mounted to the substrate 110 via electrically conductive bonds 180.
  • the sense die 120 can be electrically connected to the substrate 110 via ball bump bonds which electrically connect bond pads (not shown) of the sense die 120 (i.e., on the bottom side 127 of the diaphragm 122) to bond pads (not shown) on the substrate 110.
  • the sense die 120 can be electrically connected to the substrate 110 using any suitable connecting mechanism (e.g., adhesive, ball-grid array (BGA), solder, lead wires, or a combination thereof).
  • adhesive can be used as the material for one or more of the electrically conductive bonds 180.
  • Any suitable conductive adhesive can be used.
  • a nonlimiting example of a conductive adhesive is SDC5000, which is available from Momentive Performance Materials Inc. of Waterford, N.Y. It is contemplated that any other suitable conductive adhesive can be used.
  • the conductive adhesive can be used in combination with a nonconductive adhesive.
  • a nonlimiting example of a nonconductive adhesive is RTV6424, which is available from Momentive Performance Materials Inc. of Waterford, N.Y.
  • the adhesive can be provided in a pattern to electrically connect bond pads (not shown) of the sense die 120 (i.e., on the bottom side 127 of the diaphragm 122) to bond pads (not shown) on the substrate 110.
  • wire bonds can electrically connect the substrate 110 to the sense die assembly 150.
  • the one or more wire bonds can include any electrically conductive metal, such as copper; however, any suitable material may be used, such as conductive polymers.
  • a chamber or space 190 can be present between the bottom side 123 of the sense die 120 (the bottom side 127 of the diaphragm 122) and the substrate 110.
  • the chamber or space 190 allows the diaphragm 122 to deflect in the direction of arrow A (e.g., in response to an applied force transmitted by the actuation element 130 or 230) without contacting or bottoming out against the substrate 110.
  • the chamber or space 190 also provides room for the sensing elements 160 which can be located on the bottom side 123 of the sense die 120.
  • the chamber or space 190 can also isolate the sensing elements 160 from the source of the force.
  • an electrical output signal may be generated that is related to the degree of deflection of the diaphragm 122 in the direction of arrow A, and thus the force applied to the actuation element 130 or 230 in the direction of arrow A.
  • the actuation element 130 or 230 may be configured to transmit the external force to the diaphragm 122, which then deflects the diaphragm 122 accordingly and changes the resistance of the piezoresistive elements 160.
  • the point of contact between the diaphragm 122 and actuation element 130 or 230 can determine to some extent the amount of electrical signal outputted, with differing points of contact producing different output signals for the same applied force.
  • a method for operating the force sensor 100 or 200 can include one or more of i) applying a current to one or more sensing elements 160, ii) receiving an external force against an actuation element 130 or 230 which is retained in a sense die assembly 150 having wafer level retention provided by a sense die 120 and a cover member 140, iii) transmitting the force from the actuation element 130 to 230 to a diaphragm 122 of a sense die 120, iv) deflecting the diaphragm 122 in response to the transmitted force, and v) outputting an electrical signal from the one or more sensing elements 160.
  • Embodiments of a method of manufacturing the force sensor 100 or 200 are also disclosed herein.
  • the method includes etching (e.g. via deep reactive ion etching) a silicon wafer 171 to form a sense die 120 having the cavity 124 and a diaphragm 122, placing an actuation element 130 or 230 into the cavity 124 such that the actuation element 130 or 230 contacts a top side 125 of the diaphragm 122; and growing a cover member 140 on the top side 121 of the sense die 120, wherein the cover member 140 has an opening 146 through which a portion 132 or 232 of the actuation element 130 or 230 extends, and wherein the cover member 140 holds the actuation element 130 or 230 within the cavity 124.
  • the method can also include ball bumping a bottom side 151 of the sense die assembly 150 comprising the sense die 120, the actuation element 130 or 230, and the cover member 140; sawing the sense die assembly 150 from the silicon wafer 171; and flip chip bonding the bottom side 151 of the sense die assembly 150 onto a substrate 110.
  • the method can also include flip chip bonding the substrate 110 to the bottom side 151 of the sense die assembly 150 (comprising the sense die 120, the actuation element 130 or 230, and the cover member 140); sawing the sense die assembly 150 from the silicon wafer 171; and placing the sawn sense die assembly 150 (which is flip chip bonded to the substrate 110) on nitto tape. Placing the sense die assembly 150 on nitto tape allows delivery of the sense die assembly 150 to a customer in wafer form.
  • the actuation element 130 or 230 can engage and transmit an external force to the diaphragm 122, which in turn deflects and causes the sensing elements 160 to provide electrical signals which vary with the magnitude of the external force.
  • the disclosed force sensor 100 and 200, sense die assembly 150, and the associated alternative configurations provide a sense die assembly 150 which uses the cover member 140 formed of silicon or silicon oxide to provide wafer-level retention of the actuation element 130 or 230 in the cavity 124 of a sense die 120, instead of a protective cover or housing which is formed of plastic, polyamide, ceramic, or metal and which is connected directly to the substrate 110.
  • miniaturization of the force sensors 100 and 200 and the sense die assembly 150 to a footprint are of less than about 25 mm 2 (e.g., less than about 5 mm x 5 mm) can be achieved. That is, using the cover member 140 to provide wafer-level retention of the actuation element 130 or 230 in the cavity 124 of the sense die 120, instead of a protective cover or housing, allows for miniaturization of the force sensors 100 and 200 to a footprint area of less than about 25 mm 2 (e.g., less than about 5 mm x 5 mm).
  • the applications for the force sensor 100 or 200 and sense die assembly 150 disclosed herein are not to be limited to a particular application. Instead, the disclosed configurations can provide a low cost force sensor solution for applications which require a footprint area of less than about 25 mm 2 (e.g., less than about 5 mm x 5 mm).

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
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Claims (13)

  1. Ensemble puce de détection de force (150) comprenant :
    une puce de détection (120) comportant un côté supérieur (121) et un côté inférieur (123), dans lequel ladite puce de détection (120) comprend une cavité (124), comportant au moins une paroi (126),
    et un diaphragme (122) formé à l'intérieur de celle-ci, et
    au moins un élément de détection (160) positionné sur un côté inférieur (127) du diaphragme (122), dans lequel la puce de détection (120) est formée d'une seule tranche ;
    un élément d'actionnement (130 ou 230) placé dans la cavité (124) de la puce de détection (120) et en contact avec un côté supérieur (125) du diaphragme (122) et avec une paroi (126) de la cavité (124) ; caractérisé par :
    un élément couvercle (140) comprenant une couche de silicium ou d'oxyde de silicium formée sur le côté supérieur (121) de la puce de détection (120), ledit élément couvercle (140) comprenant une ouverture (146) positionnée sur la cavité (124) de la puce de détection (120), dans lequel une partie (132 ou 232) de l'élément d'actionnement (130 ou 230) traverse l'ouverture (146),
    dans lequel l'élément couvercle (140) comporte une partie (141) définissant l'ouverture (146), et la cavité (124) est définie par le côté supérieur (125) du diaphragme (122), l'au moins une paroi (126) et une partie de l'élément couvercle (140), lequel définit une paroi supérieure (142) de la cavité (124) et
    dans lequel l'élément couvercle (140) assure une rétention au niveau de la tranche de l'élément d'actionnement (130 ou 230) dans la cavité (124).
  2. Ensemble puce de détection (150) selon la revendication 1, dans lequel l'élément d'actionnement (130 ou 230) est
    i) de forme sphérique ou
    ii) de forme cylindrique
    et comporte une première partie (231) et une seconde partie (232), dans lequel la première partie (231) présente un diamètre supérieur à un diamètre de la seconde partie (232), dans lequel le diamètre de la première partie (231) est supérieur à l'ouverture (146) de l'élément de couvercle (140) traversé par la seconde partie (232) de l'élément d'actionnement (230).
  3. Ensemble puce de détection (150) selon la revendication 1, dans lequel la puce de détection (120) comporte une zone d'empreinte dans la plage comprise entre 2,5 mm2 et 25 mm2.
  4. Ensemble puce de détection (150) selon la revendication 1, dans lequel une chambre ou un espace (190) est présent entre le côté inférieur (127) du diaphragme (122) et un substrat (110).
  5. Ensemble puce de détection (150) selon la revendication 1, dans lequel la cavité (124) présente une largeur d'environ 0,1 mm.
  6. Ensemble puce de détection (150) selon la revendication 1, comprenant en outre :
    un substrat (110),
    dans lequel le côté inférieur (123) de la puce de détection (120) est une puce retournée liée au substrat (110).
  7. Ensemble puce de détection (150) selon la revendication 6, dans lequel l'élément d'actionnement (130 ou 230) est
    i) de forme sphérique ou
    ii) de forme cylindrique et comporte une première partie (231) et une seconde partie (232), dans lequel la première partie (231) présente un diamètre supérieur à un diamètre de la seconde partie (232), dans lequel le diamètre de la première partie (231) est supérieur à l'ouverture (146) dans l'élément de couvercle (140) traversé par la seconde partie (232) de l'élément d'actionnement (230).
  8. Ensemble puce de détection (150) selon la revendication 6, dans lequel la puce de détection (120) comporte une zone d'empreinte dans la plage comprise entre environ 2,5 mm2 et environ 25 mm2.
  9. Ensemble puce de détection (150) selon la revendication 6, dans lequel une chambre ou un espace (190) est présent entre le côté inférieur (127) du diaphragme (122) et le substrat (110).
  10. Procédé de fabrication d'un capteur de force (100 ou 200) comprenant :
    la gravure d'une tranche de silicium (171) pour former une puce de détection (120) comportant une cavité (124), comportant au moins une paroi (126), et un diaphragme (122) ;
    le placement d'un élément d'actionnement (130 ou 230) dans la cavité (124) de telle sorte que l'élément d'actionnement (130 ou 230) est en contact avec un côté supérieur (125) du diaphragme (122) et une paroi (126) de la cavité (124) ; caractérisé par :
    la croissance d'un élément de couvercle (140) en silicium ou en oxyde de silicium sur le côté supérieur (121) de la puce de détection (120), dans lequel l'élément de couvercle (140) comporte une partie (141) définissant une ouverture (146) traversée par une partie (132 ou 232) de l'élément d'actionnement (130 ou 230), la cavité étant définie par le côté supérieur (125) du diaphragme (122), ladite au moins une paroi (126) et une partie de l'élément de couvercle (140), laquelle définit une paroi supérieure (142) de la cavité (124), et dans lequel l'élément de couvercle (140) fournit une rétention au niveau de la tranche de l'élément d'actionnement (130 ou 230) dans la cavité (124).
  11. Procédé selon la revendication 10, comprenant en outre :
    le heurt par boule d'un côté inférieur (151) d'un ensemble puce de détection (150) comprenant la puce de détection (120), l'élément d'actionnement (130 ou 230) et l'élément de couvercle (140) ;
    le sciage de l'ensemble puce de détection (150) à partir de la tranche de silicium (171) ; et
    la liaison de puce retournée de côté inférieur (151) de l'ensemble puce de détection (150) à un substrat (110).
  12. Procédé selon la revendication 10, comprenant en outre :
    la liaison de puce retournée du substrat (110) à un côté inférieur (151) d'un ensemble puce de détection (150) comprenant la puce de détection (120), l'élément d'actionnement (130 ou 230) et l'élément de couvercle (140) ;
    le sciage de l'ensemble puce de détection (150) à partir de la tranche de silicium (171) ; et
    le placement de l'ensemble puce de détection (150) sur une bande.
  13. Procédé selon la revendication 10, dans lequel au moins un élément piézorésistif (160) est situé sur un côté inférieur (127) du diaphragme (122).
EP17176511.8A 2016-06-24 2017-06-16 Capteur de force à faible coût Active EP3260831B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/192,311 US9869598B1 (en) 2016-06-24 2016-06-24 Low cost small force sensor

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Publication Number Publication Date
EP3260831A1 EP3260831A1 (fr) 2017-12-27
EP3260831B1 true EP3260831B1 (fr) 2020-09-02

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CN (1) CN107543639B (fr)

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US11162850B2 (en) * 2019-04-25 2021-11-02 Measurement Specialties, Inc. Sensor assemblies with integrated electrical connections and diaphragm overload protection

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EP3260831A1 (fr) 2017-12-27
CN107543639B (zh) 2021-03-12
US9869598B1 (en) 2018-01-16
CN107543639A (zh) 2018-01-05
US20170370793A1 (en) 2017-12-28

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