EP3029733A1 - Dispositif d'affichage électroluminescent organique - Google Patents

Dispositif d'affichage électroluminescent organique Download PDF

Info

Publication number: EP3029733A1
Authority: EP; European Patent Office
Prior art keywords: electrode; organic light; light emitting; shield unit; display device
Prior art date: 2014-12-06
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

EP15197945.7A

Other languages

German (de)

English (en)

Other versions

EP3029733B1 (fr

Inventor

Jaehee Park

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

LG Display Co Ltd

Original Assignee

LG Display Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-12-06

Filing date

2015-12-04

Publication date

2016-06-08

2015-06-30 Priority claimed from KR1020150092696A external-priority patent/KR102454728B1/ko

2015-12-04 Application filed by LG Display Co Ltd filed Critical LG Display Co Ltd

2016-06-08 Publication of EP3029733A1 publication Critical patent/EP3029733A1/fr

2020-03-04 Application granted granted Critical

2020-03-04 Publication of EP3029733B1 publication Critical patent/EP3029733B1/fr

Status Active legal-status Critical Current

2035-12-04 Anticipated expiration legal-status Critical

Links

239000010409 thin film Substances 0.000 claims abstract description 137
239000003990 capacitor Substances 0.000 claims abstract description 93
239000004065 semiconductor Substances 0.000 claims abstract description 58
239000000463 material Substances 0.000 claims description 13
229910052751 metal Inorganic materials 0.000 claims description 11
239000002184 metal Substances 0.000 claims description 11
239000010410 layer Substances 0.000 description 150
230000001808 coupling effect Effects 0.000 description 44
230000003071 parasitic effect Effects 0.000 description 43
230000003247 decreasing effect Effects 0.000 description 39
238000009413 insulation Methods 0.000 description 19
239000000758 substrate Substances 0.000 description 16
230000000052 comparative effect Effects 0.000 description 13
239000011229 interlayer Substances 0.000 description 11
230000005684 electric field Effects 0.000 description 10
230000008859 change Effects 0.000 description 8
230000000694 effects Effects 0.000 description 7
238000007667 floating Methods 0.000 description 7
238000000034 method Methods 0.000 description 7
230000008569 process Effects 0.000 description 6
239000004020 conductor Substances 0.000 description 5
229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
230000006866 deterioration Effects 0.000 description 4
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 3
230000007423 decrease Effects 0.000 description 3
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
230000001105 regulatory effect Effects 0.000 description 3
XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
239000010949 copper Substances 0.000 description 2
239000002019 doping agent Substances 0.000 description 2
239000010931 gold Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
230000004044 response Effects 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
230000008878 coupling Effects 0.000 description 1
238000010168 coupling process Methods 0.000 description 1
238000005859 coupling reaction Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
229910052733 gallium Inorganic materials 0.000 description 1
239000011521 glass Substances 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
230000008595 infiltration Effects 0.000 description 1
238000001764 infiltration Methods 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
229920003023 plastic Polymers 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052709 silver Inorganic materials 0.000 description 1
239000004332 silver Substances 0.000 description 1
YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
239000011787 zinc oxide Substances 0.000 description 1
BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1

Images

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment

Definitions

the driving thin film transistor 120 includes an active layer 121, a gate electrode 122 overlapping the active layer 121, and an input electrode 123 and an output electrode 124 connected with the active layer 121.
the active layer 121 may refer to a channel or a semiconductor layer.
the shield unit includes a semiconductive portion overlapping the first electrode and/or the gate electrode.
a distance between the shield unit and the data line is smaller than a distance between the second electrode and the data line. That is, the shield unit may extend further towards the data line than the second electrode.
the shield unit 580 includes a plurality of shielding areas corresponding to at least each of the data line 251 and the VDD line 252.
a data line may overlap the shield unit as a portion of the patterned semiconductor layer is disposed.
a distance between an edge of the first electrode and an edge of the adjacent shield unit may be set to be greater than a distance between the edge of the first electrode and an edge of the adjacent data line.
a portion of the shield unit may have semiconductive characteristic.
the active layer overlapping the first pattern electrode may have semiconductive characteristic.
a portion of the shield unit which is further extended than the first pattern electrode and exposed i may have conductive characteristic.
the anode contact part of the second pattern electrode may be connected with the shield unit and the output electrode.
a first shield capacitance which varies on the basis of a data voltage (image signal) may be generated between the patterned semiconductor layer and the first pattern electrode.

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Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Geometry (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Manufacturing & Machinery (AREA)
Electroluminescent Light Sources (AREA)
Devices For Indicating Variable Information By Combining Individual Elements (AREA)

EP15197945.7A 2014-12-06 2015-12-04 Dispositif d'affichage électroluminescent organique Active EP3029733B1 (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR20140174509		2014-12-06
KR1020150092696A KR102454728B1 (ko)	2014-12-06	2015-06-30	유기 발광 표시 장치

Publications (2)

Publication Number	Publication Date
EP3029733A1 true EP3029733A1 (fr)	2016-06-08
EP3029733B1 EP3029733B1 (fr)	2020-03-04

Family

ID=54783447

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP15197945.7A Active EP3029733B1 (fr)	2014-12-06	2015-12-04	Dispositif d'affichage électroluminescent organique

Country Status (2)

Country	Link
US (1)	US9978826B2 (fr)
EP (1)	EP3029733B1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3316309A1 (fr) *	2016-10-31	2018-05-02	LG Display Co., Ltd.	Afficheur électroluminescent organique
EP3751616A1 (fr) *	2019-06-14	2020-12-16	Samsung Display Co., Ltd.	Dispositif d'affichage et son procédé de fabrication
JP2021500588A (ja) *	2017-08-31	2021-01-07	京東方科技集團股▲ふん▼有限公司ＢｏｅＴｅｃｈｎｏｌｏｇｙＧｒｏｕｐＣｏ．，Ｌｔｄ．	アレイ基板、表示装置およびアレイ基板の製造方法

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KR102528296B1 (ko) *	2015-11-18	2023-05-04	삼성디스플레이 주식회사	표시 장치
KR20180066937A (ko) *	2016-12-09	2018-06-20	삼성디스플레이 주식회사	표시 장치
KR102531126B1 (ko) *	2017-06-14	2023-05-11	삼성디스플레이 주식회사	단위 화소 및 이를 포함하는 유기 발광 표시 장치
CN109326624B (zh) *	2017-08-01	2021-12-24	京东方科技集团股份有限公司	像素电路、其制造方法及显示装置
KR102349280B1 (ko)	2017-08-08	2022-01-11	삼성디스플레이 주식회사	박막 트랜지스터 어레이 기판, 디스플레이 장치 및 이의 제조 방법
CN108878494B (zh) *	2018-06-29	2020-12-04	上海天马有机发光显示技术有限公司	有机发光显示面板和显示装置
KR20200047834A (ko) *	2018-10-24	2020-05-08	삼성디스플레이 주식회사	유기 발광 표시 장치
KR102592957B1 (ko) *	2018-10-31	2023-10-24	삼성디스플레이 주식회사	디스플레이 장치
CN109449169B (zh) *	2018-12-06	2021-04-13	京东方科技集团股份有限公司	阵列基板及其制造方法、显示装置
KR102606687B1 (ko) *	2018-12-12	2023-11-28	삼성디스플레이 주식회사	표시 장치 및 이의 제조 방법
CN109755281B (zh)	2019-01-14	2021-07-06	深圳市华星光电半导体显示技术有限公司	Oled显示面板及其制作方法
KR20200098803A (ko) *	2019-02-12	2020-08-21	삼성디스플레이 주식회사	표시 패널
KR20210070462A (ko) *	2019-12-04	2021-06-15	삼성디스플레이 주식회사	표시장치
CN111129003B (zh) *	2019-12-18	2022-07-29	重庆康佳光电技术研究院有限公司	一种电致发光器件的覆晶结构和显示装置
KR20210113531A (ko) *	2020-03-06	2021-09-16	삼성디스플레이 주식회사	표시 장치
KR20220022920A (ko) *	2020-08-19	2022-03-02	삼성디스플레이 주식회사	표시 장치
WO2022052008A1 (fr) *	2020-09-10	2022-03-17	京东方科技集团股份有限公司	Substrat d'affichage et panneau d'affichage
CN112736143B (zh) *	2020-12-23	2022-08-23	武汉华星光电半导体显示技术有限公司	显示面板及显示装置
KR20220125902A (ko) *	2021-03-05	2022-09-15	삼성디스플레이 주식회사	디스플레이 장치

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2015
- 2015-12-04 EP EP15197945.7A patent/EP3029733B1/fr active Active
- 2015-12-04 US US14/960,024 patent/US9978826B2/en active Active

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JP2006030635A (ja) *	2004-07-16	2006-02-02	Sony Corp	表示装置
US20100079419A1 (en) *	2008-09-30	2010-04-01	Makoto Shibusawa	Active matrix display
EP2498242A1 (fr) *	2011-03-10	2012-09-12	Seiko Epson Corporation	Dispositif électro-optique et appareil électronique

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3316309A1 (fr) *	2016-10-31	2018-05-02	LG Display Co., Ltd.	Afficheur électroluminescent organique
US10468477B2 (en)	2016-10-31	2019-11-05	Lg Display Co., Ltd.	Organic light-emitting display device
JP2021500588A (ja) *	2017-08-31	2021-01-07	京東方科技集團股▲ふん▼有限公司ＢｏｅＴｅｃｈｎｏｌｏｇｙＧｒｏｕｐＣｏ．，Ｌｔｄ．	アレイ基板、表示装置およびアレイ基板の製造方法
EP3688807A4 (fr) *	2017-08-31	2021-05-19	BOE Technology Group Co., Ltd.	Substrat de matrice, appareil d'affichage et procédé de fabrication du substrat de matrice
US11239297B2 (en)	2017-08-31	2022-02-01	Boe Technology Group Co., Ltd.	Array substrate with capacitor including conductive part of active layer and method of fabricating thereof
EP3751616A1 (fr) *	2019-06-14	2020-12-16	Samsung Display Co., Ltd.	Dispositif d'affichage et son procédé de fabrication
US11049929B2 (en)	2019-06-14	2021-06-29	Samsung Display Co., Ltd.	Display device and method of manufacturing the same
US11678547B2 (en)	2019-06-14	2023-06-13	Samsung Display Co., Ltd.	Display device and method of manufacturing the same

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US20160163780A1 (en)	2016-06-09
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