EP2894951B1 - Substrat de câblage et procédé de fabrication de celui-ci - Google Patents
Substrat de câblage et procédé de fabrication de celui-ci Download PDFInfo
- Publication number
- EP2894951B1 EP2894951B1 EP13834871.9A EP13834871A EP2894951B1 EP 2894951 B1 EP2894951 B1 EP 2894951B1 EP 13834871 A EP13834871 A EP 13834871A EP 2894951 B1 EP2894951 B1 EP 2894951B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- wiring substrate
- base portion
- metal
- surface layer
- connection terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
- 239000000758 substrate Substances 0.000 title claims description 105
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000002344 surface layer Substances 0.000 claims description 60
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 238000007747 plating Methods 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 15
- 238000002844 melting Methods 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 238000010292 electrical insulation Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 21
- 230000004048 modification Effects 0.000 description 21
- 238000012986 modification Methods 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- -1 i.e. Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/119—Details of rigid insulating substrates therefor, e.g. three-dimensional details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3457—Solder materials or compositions; Methods of application thereof
- H05K3/3473—Plating of solder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0326—Organic insulating material consisting of one material containing O
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0367—Metallic bump or raised conductor not used as solder bump
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Definitions
- the present invention relates to a wiring substrate and a production method therefor.
- a wiring substrate is known, which is of the type adapted to mount thereon a semiconductor chip (see, for example, Patent Documents 1 and 2).
- connection terminals are provided for connection to the semiconductor chip.
- Patent Document 1 discloses to form an insulating layer with an opening through which a plurality of connection terminals are exposed, provide an insulating substance between the connection terminals within the opening, and then, perform plating on the connection terminals for the purpose of preventing an electrical short circuit caused between the connection terminals by plating material.
- Patent Document 2 discloses to, for the purpose of preventing an electrical short circuit caused between connection terminals by soldering, form an insulating layer between the connection terminals and make the thickness of the insulating layer smaller than that of the connection terminals.
- connection terminals In the techniques of Patent Documents 1 and 2, sufficient consideration has not been given to the occurrence of damage of the connection terminals during production of the wiring substrate.
- the techniques of Patent Documents 1 and 2 thus have the possibility of damage of the connection terminals during production of the wiring substrate so that the mechanical and electrical characteristics of the connection terminals are deteriorated. This leads to degradation in the reliability of connection of the connection terminals to the semiconductor chip. It is assumed that the connection terminals would sustain such damage due to not only contact with another object e.g. production equipment or another wiring substrate but also excessive erosion by various treatments e.g. etching, washing and plating. In the case of performing displacement plating on the connection terminals, for example, the connection terminals may be excessively eroded by a plating treatment solution and thereby hollowed out during the displacement plating.
- the present invention has been made to solve at least part of the above problems and can be embodied in the following aspects.
- the present invention can be embodied in various forms other than the wiring substrate, e.g., in the form of a device equipped with the wiring substrate, an apparatus for production of the wiring substrate and the like.
- FIG. 1 is a top view of a wiring substrate 10 according to one embodiment of the present invention.
- FIG. 2 is a schematic section view of part of the wiring substrate 10.
- FIG. 3 is a schematic section view of part of the wiring substrate 10 in a condition that a semiconductor chip 20 is mounted on the wiring substrate 10. It is herein noted that: FIG. 2 shows a cross section of the wiring substrate 10 as taken along line F2-F2 of FIG. 1 ; and FIG. 3 shows a cross section of the wiring substrate 10, on which the semiconductor chip 20 is mounted, as taken at a position corresponding to line F2-F2 of FIG. 1 .
- the wiring substrate 10 is in the form of a plate-shaped substrate produced using an organic material and thereby also called "organic substrate".
- the wiring substrate 10 is adapted for flip-chip mounting to mount thereon the semiconductor chip 20 as shown in FIG. 3 .
- the wiring substrate 10 includes a substrate layer 120, connection terminals 130 and a surface layer 140.
- the connection terminals 130 and the surface layer 140 are formed on the substrate layer 120 in such a manner that the connection terminals 130 are exposed from the surface layer 140.
- the wiring substrate 10 may have a multilayer structure in which a plurality of conductor layers and a plurality of insulating layers are alternately laminated on the substrate layer 120. It is feasible to form such a multilayer structure may on each of both sides of the substrate layer 120.
- FIG. 1 there are illustrated X, Y and Z axes perpendicular to one another. It is noted that the X, Y and Z axes of FIG. 1 correspond to those of the other figures.
- the Z axis refers to one of these axes extending in a lamination direction of the surface layer 140 relative to the substrate layer 120 where +Z axis direction is defined as a direction from the substrate layer 120 to the surface layer 140 along the Z axis; and -Z axis direction is defined as a direction opposite the +Z axis direction.
- the X and Y axes refer to the other two of these axes extending in a layer in-plane direction perpendicular to the Z axis
- +X axis direction is defined as a direction from the left side to the right side along the X axis in FIG. 1
- -X axis direction is defined as a direction opposite the +X axis direction
- +Y axis direction is defined as a direction from the back side to the front side along the Y axis in FIG. 1
- -Y axis direction is defined as a direction opposite the +Y axis direction.
- the substrate layer 120 of the wiring substrate 10 is made of an insulating material in a plate shape.
- a thermosetting resin such as bismaleimide-triazine resin (BT) or epoxy resin is used as the insulating material of the substrate layer 120.
- the insulating material of the substrate layer 120 may be a fiber reinforced resin (such as glass-fiber reinforced epoxy resin).
- through holes and through-hole conductors may be formed in the substrate layer 120 as a part of wiring for connection to the connection terminals 130.
- the surface layer 140 of the wiring substrate 10 is made as a layer of an insulating material called "solder resist".
- the surface layer 140 has a first surface region 141, a second surface region 142 and a wall surface region 148.
- the first surface region 141 is a surface region of the surface layer 140 in which an opening 150 is formed.
- the first surface region 141 is oriented along the X and Y axes and directed toward the +Z axis direction so as to constitute a part of a +Z axis side surface of the surface layer 140.
- the second surface region 142 is a surface region of the surface layer 140 located inside the opening 150 and recessed toward the substrate layer 120 relative to the first surface region 141.
- the second surface region 142 is oriented along the X and Y axes and directed toward the +Z axis direction so as to constitute a part of the +Z axis side surface of the surface layer 140 inside the opening 150.
- the connection terminals 130 are exposed from the second surface region 142.
- the wall surface region 148 is a surface region of the surface layer 140 extending between the first and second surface regions 141 and 142 in the lamination direction (Z axis direction) and thereby defining the opening 150.
- the wall surface region 148 is connected to each of the first and second surface regions 141 and 142 so as to form a square corner therebetween as shown in FIG. 2 .
- the wall surface region 148 may be connected to at least one of the first and second surface regions 141 and 142 via a curved corner surface.
- connection terminals 130 of the wiring substrate 10 are provided as a conductor pattern of a conductive material on the substrate layer 120.
- the connection terminals 130 are formed by applying a copper plating layer to a surface of the substrate layer 120 and etching the copper plating layer into a desired shape.
- connection terminals 130 are exposed from the surface layer 140 and, more specifically, the second surface region 142 of the surface layer 140. In the present embodiment, the connection terminals 130 protrude from the second surface region 142 in the +Z axis direction as shown in FIG. 2 .
- connection terminals 130 are used so as to make connection to connection terminals 232 of the semiconductor chip 20 via soldering SD.
- the connection terminals 130 are soldered to the respective connection terminals 232 of the semiconductor chip 20; and an underfill material 30 is charged into a clearance within the opening 150 between the wiring substrate 10 and the semiconductor chip 20.
- FIG. 4 is an enlarged section view schematically showing the detailed configuration of the connection terminal 130 in the wiring substrate 10. It is noted that FIG. 4 shows, by enlargement, one of the connection terminals 130 of FIG. 2 .
- the connection terminal 130 has a base portion 132, a covering portion 134 and a filling portion 138.
- the base portion 132 of the connection terminal 130 is located adjacent to the surface layer 140 so as to extend through the surface layer 140 and protrude from the surface layer 140. More specifically, the base portion 132 is located adjacent to the surface layer 140 so as to extend through the surface layer 140 from the substrate layer 120 toward the +Z axis direction and protrude from the second surface region 142 of the surface layer 140 toward the +Z axis direction in the present embodiment.
- the base portion 132 is made of an electrically conductive first metal. In the present embodiment copper (Cu) is used as the first metal of the base portion 132. It is feasible in another alternative embodiment to use another electrically conductive metal material as the first metal.
- the base portion 132 is provided with a lateral region 132a, a lateral region 132b and an end region 132c.
- the lateral region 132a of the base portion 132 is situated on the -Z axis side with respect to the second surface region 142 and adjacent to the inside of the surface layer 140.
- the lateral region 132b of the base portion 132 is situated on the +Z axis side with respect to the second surface region 142 and is connected to the end region 132c.
- the end region 132c of the base portion 132 is provided so as to constitute a +Z axis side end of the base portion 132.
- the lateral portion 132b and the end portion 132c are covered by the covering portion 134.
- the covering portion 134 of the connection terminal 130 is located so as to cover the base portion 132.
- the covering portion 134 covers the lateral portion 132b and the end portion 132c of the base portion 132 as mentioned above.
- the covering portion 134 is made of an electrically conductive second metal.
- the second metal of the covering portion 134 is lower in melting point than the first metal of the base portion 132.
- tin (Sn) is used as the second metal of the covering portion 134. It is feasible in another alternative embodiment to use another electrically conductive metal material as the second metal.
- the filling portion 138 of the connection terminal 130 is located so as to fill a hollow 136 in the base portion 132.
- the hollow 136 is provided from the outside to the inside of the base portion 132 at a position between the lateral regions 132a and 132b.
- the filling portion 138 is mainly made of the second metal of the covering portion 134 but partly made of an alloy containing the first and second metals. It is feasible that the filling portion 138 is made of at least one of the second metal and the alloy containing the first and second metals.
- FIG. 5 is a flowchart for production of the wiring substrate 10.
- the respective layers of the wiring substrate 10, i.e., the substrate layer 120 and the surface layer 140, and the base portions 132 of the connection terminals 130 are first formed (process step P110).
- the base portions 132 of the connection terminals 130 are formed by applying a copper plating layer to the surface of the substrate layer 120 and etching the copper plating layer into a desired shape.
- the surface layer 140 is formed by applying a photocurable insulating resin to the surface of the substrate layer 120 on which the base portions 132 of the connection terminals 130 have been formed, and then, subjecting the applied resin to exposure and development in the present embodiment.
- the opening 150 of the surface layer 140 corresponds to where masking has been applied during the exposure.
- the second surface region 142 and the wall surface region 148 are thus defined on the surface layer 140 by washing away uncured resin part during the development.
- the first and second surface regions 141 and 142 and the wall surface region 148 are formed integrally so as to constitute the surface layer 140 as a single layer in the present embodiment. It is feasible in another alternative embodiment to define the second surface region 142 on the surface layer 140 by, after making the opening 150 in the surface layer 140 such that the opening 150 reaches the base portion 132, charging the photocurable insulating resin again into the opening 150.
- FIG. 6 is an enlarged section view showing the detailed configuration of the connection terminal 130 during the process of production of the wiring substrate 10. It is herein noted that FIG. 6 shows the state of the wiring substrate 10 after the completion of the process step P110.
- the base portion 132 of the connection terminal 130 is provided adjacent to the surface layer 140 with a part of the base portion 132 extending through the surface layer 140 and another part of the base portion 132 being exposed and protruding from the surface layer 140.
- the base portion 132 of the connection terminal 130 is provided with a lateral region 132a, a lateral region 132d and an end region 132e in the state after the process step P110.
- the lateral region 132a of the base portion 132 is situated on the -Z axis side with respect to the second surface region 142 and adjacent to the inside of the surface layer 140.
- the lateral region 132d of the base portion 132 is situated on the +Z axis side with respect to the second surface region 142 and is continuously connected to the lateral region 132a.
- the end region 132e of the base portion 132 is provided so as to constitute a +Z axis side end of the base portion 132 and is connected to the lateral region 132d. In this state, the lateral portions 132a and 132d are being exposed from the surface layer 140.
- the covering portion 134 of the connection terminal 130 is formed by plating treatment (process step P150).
- the covering portion 134 is formed by displacement tin plating that is one type of electroless plating.
- the covering portion 134 of the connection terminal 130 may be formed by using another electrically conductive material or by any other plating treatment such as electroplating or chemical plating.
- FIG. 7 is an enlarged section view showing the detailed configuration of the connection terminal 130 during the process of production of the wiring substrate 10. It is herein noted that FIG. 7 shows the state of the wiring substrate 10 after the completion of the process step P150.
- the displacement plating is performed such that the second metal, i.e., tin (Sn) displaces the first metal, i.e., copper (Cu) on the lateral region 132d and the end region 132e of the base portion 132 of the connection terminal 130.
- the base portion 132 is eroded by being formed with a lateral region 132b and an end region 132c in place of the lateral region 132d and the lateral region 132e, respectively, while the covering portion 134 is formed on where the lateral region 132d and the end region 132e have been present as shown in FIG. 7 in the state after the process step P150.
- the hollow 136 is provided in a part of the base portion 132 between the lateral regions 132a and 132b due to excessive erosion by a plating treatment solution during the displacement tin plating in the process step P150.
- the hollow 136 of the base portion 132 may be provided due to any causes other than the displacement tin plating, such as contact with another object e.g. production equipment or another wiring substrate, various treatments e.g. etching and washing etc.
- the filling portion 138 of the connection terminal 130 is formed by heating the wiring substrate 10 (process step P170).
- the filling portion 138 is formed by heating the connection terminal 130 at a temperature higher than the melting point of the second metal, i.e., tin (Sn) and thereby filling the hollow 136 in the base portion 132 with a molten metal melted from at least the covering portion 134 among the base portion 132 and the covering portion 134.
- the connection terminal 130 is obtained in the form of FIG. 4 .
- the base portion 132 which is made of the first metal
- the heating temperature of the connection terminals 130 it is preferable to avoid melting of the base portion 132, which is made of the first metal, by setting the heating temperature of the connection terminals 130 to be higher than or equal to the melting point of the second metal and lower than the melting point of the first metal.
- the melting of the base portion 132 may however be allowed within the range that can maintain the function of the connection terminal 130.
- the filling portion 138 may be formed simultaneously with the application of soldering SD by reflow treatment for connection of the semiconductor chip 20 and the connection terminal 130.
- the wiring substrate 10 is washed (process step P180). In this way, the wiring substrate 10 is completed.
- FIG. 8 is a top view of a wiring substrate 10b according to one modification example of the above embodiment.
- the same constituent parts of the wiring substrate 10b as those of the wiring substrate 10 of the above embodiment are denoted by the same reference numerals to avoid duplicating explanation thereof.
- the wiring substrate 10b of the present modification example is the same as the wiring substrate 10 of the above embodiment, except for the shapes of first and second surface regions 141 and 142, connection terminals 130 and openings 150.
- Openings 150 are formed in the first surface region 141 of the wiring substrate 10b. These four openings 150 are rectangular in shape when viewed from the +Z axis direction and are arranged so as to surround and define a rectangle area in the center of the first surface region 141 of the wiring substrate 10b. In the present embodiments, the four openings 150 are arranged along outer peripheral edges of the wiring substrate 10b, respectively.
- connection terminals 130 are indicated by hatching.
- a plurality of second surface regions 142 and a plurality of connection terminals 130 are provided in the opening 150.
- Each of the connection terminals 130 is elongated in shape so as to extend from one end to the other end along the shorter side direction of the rectangular opening 150.
- Each of the second surface regions 142 is located between adjacent ones of the connection terminals 130.
- each of the connection terminals 130 has a base portion 132, a covering portion 134 and a filling portion 138 in the present modification example.
- FIG. 9 is a top view of a wiring substrate 10c according to another modification example of the above embodiment.
- the same constituent parts of the wiring substrate 10c as those of the wiring substrate 10 of the above embodiment are denoted by the same reference numerals to avoid duplicating explanation thereof.
- the present modification example is also applicable to the other embodiments and other modification examples explained in the present specification.
- the wiring substrate 10c of the present modification example is the same as the wiring substrate 10 of the above embodiment, except for connection terminals 130c.
- the connection terminal 130c of the present modification example is the same as the connection terminal 130 of the above embodiment, except that the respective portions of the connection terminals 130c are different in configuration because of the reason that the end region 132c of the base portion 132 of the connection terminal 130c is situated on the -Z axis side with respect to the second surface region 142 of the surface layer 140.
- the base portion 132 of the connection terminal 130c is located adjacent to the surface layer 140.
- the lateral region 132a of the base portion 132 is situated on the -Z axis side with respect to the second surface region 142 of the surface layer 140 and adjacent to the inside of the surface layer 140.
- the lateral region 132b and the end region 132c of the base portion 132 are situated on the -Z axis side with respect to the second surface region 142 of the surface layer 140 and are covered by the covering portion 134.
- the covering portion 134 reaches a point on the +Z axis side of the second surface region 142 of the surface layer 140.
- the filling portion 138 is also situated on the -Z axis side with respect to the second surface region 142 of the surface layer 140.
- the production method of the wiring substrate 10c is the same as that of the above embodiment, except that the base portion 132 and the surface layer 140 are formed such that the end region 132c of the base portion 132 is situated on the -Z axis side with respect the second surface region 142 of the surface layer 140.
- the present invention is not limited to the above aspects, embodiments and modifications/variations and can be embodied in various forms without departing from the scope of the present invention.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Claims (5)
- Substrat de câblage (10, 10b, 10c), comprenant :une couche de surface (140) ayant des propriétés d'isolation électrique ; etune borne de connexion (130, 130c) ayant des propriétés de conduction électrique et faisant saillie à partir de la couche de surface,dans lequel la borne de connexion comporte :une partie de base (132) faite d'un premier métal électriquement conducteur et positionnée de manière adjacente à la couche de surface (140) ;une partie de recouvrement (134) faite d'un second métal électriquement conducteur ayant un point de fusion inférieur à celui du premier métal et recouvrant la partie de base (132) ; etune partie de remplissage (138) faite d'au moins un du second métal et d'un alliage contenant les premier et second métaux et remplissant un creux (136) dans la partie de base (132).
- Substrat de câblage selon la revendication 1, dans lequel le premier métal est du cuivre (Cu) ; et dans lequel le second métal est de l'étain (Sn).
- Substrat de câblage selon la revendication 1 ou 2, dans lequel la partie de base (132) est positionnée de sorte à s'étendre à travers la couche de surface (140) et à faire saillie à partir de la couche de surface.
- Procédé de fabrication d'un substrat de câblage (10, 10b, 10c), le substrat de câblage comprenant : une couche de surface (140) ayant des propriétés d'isolation électrique ; et une borne de connexion (130, 130c) faisant saillie à partir de la couche de surface (140) et comportant une partie de base (132) faite d'un premier métal électriquement conducteur et une partie de recouvrement (134) faite d'un second métal électriquement conducteur ayant un point de fusion inférieur à celui du premier métal et recouvrant la partie de base (132), le procédé de fabrication comprenant :
le chauffage de la borne de connexion à une température supérieure ou égale au point de fusion du second métal de sorte à remplir un creux (136) dans la partie de base (132) avec un métal en fusion fondu à partir d'au moins la partie de recouvrement (134) parmi la partie de base et la partie de recouvrement. - Procédé de fabrication du substrat de câblage selon la revendication 4, dans lequel le creux (136) est prévu dans la partie de base (132) lors de la formation de la partie de recouvrement (134) par placage par déplacement.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012196863 | 2012-09-07 | ||
PCT/JP2013/004588 WO2014038125A1 (fr) | 2012-09-07 | 2013-07-29 | Substrat de câblage et procédé de fabrication de celui-ci |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2894951A1 EP2894951A1 (fr) | 2015-07-15 |
EP2894951A4 EP2894951A4 (fr) | 2016-08-10 |
EP2894951B1 true EP2894951B1 (fr) | 2018-07-04 |
Family
ID=50236764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13834871.9A Not-in-force EP2894951B1 (fr) | 2012-09-07 | 2013-07-29 | Substrat de câblage et procédé de fabrication de celui-ci |
Country Status (7)
Country | Link |
---|---|
US (1) | US10123415B2 (fr) |
EP (1) | EP2894951B1 (fr) |
JP (1) | JP5513694B1 (fr) |
KR (1) | KR101622895B1 (fr) |
CN (1) | CN104604341B (fr) |
TW (1) | TWI492678B (fr) |
WO (1) | WO2014038125A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6181441B2 (ja) * | 2013-06-24 | 2017-08-16 | 新光電気工業株式会社 | パッド構造、実装構造、及び、製造方法 |
KR20170083823A (ko) * | 2016-01-11 | 2017-07-19 | 에스케이하이닉스 주식회사 | 측면 범프 결합 구조를 갖는 반도체 패키지 |
Family Cites Families (23)
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JP2001267376A (ja) * | 2000-03-14 | 2001-09-28 | Seiko Instruments Inc | Fpcの製造方法及び表示装置 |
JP2002261111A (ja) * | 2001-03-06 | 2002-09-13 | Texas Instr Japan Ltd | 半導体装置及びバンプ形成方法 |
JP2002289652A (ja) | 2001-03-26 | 2002-10-04 | Hitachi Cable Ltd | 半導体装置用テープキャリアおよびその製造方法 |
JP2004288785A (ja) * | 2003-03-20 | 2004-10-14 | Sony Corp | 導電突起の接合構造及び接合方法 |
TWI254995B (en) | 2004-01-30 | 2006-05-11 | Phoenix Prec Technology Corp | Presolder structure formed on semiconductor package substrate and method for fabricating the same |
JP2006024902A (ja) * | 2004-06-07 | 2006-01-26 | Shinko Electric Ind Co Ltd | 極細線パターンを有する配線基板の製造方法および配線基板 |
WO2006040847A1 (fr) * | 2004-10-14 | 2006-04-20 | Ibiden Co., Ltd. | Carte à circuit imprimé et procédé de fabrication de carte à circuit imprimé |
JP4665531B2 (ja) * | 2005-01-27 | 2011-04-06 | 日立電線株式会社 | 配線板の製造方法 |
TWI281840B (en) * | 2005-05-09 | 2007-05-21 | Phoenix Prec Technology Corp | Electrically connecting structure of circuit board and method for fabricating same |
JP4747770B2 (ja) | 2005-10-04 | 2011-08-17 | 日立化成工業株式会社 | プリント配線板の製造方法、及び半導体チップ搭載基板の製造方法 |
DE102006025162B3 (de) * | 2006-05-30 | 2008-01-31 | Epcos Ag | Flip-Chip-Bauelement und Verfahren zur Herstellung |
US7619305B2 (en) * | 2007-08-15 | 2009-11-17 | Powertech Technology Inc. | Semiconductor package-on-package (POP) device avoiding crack at solder joints of micro contacts during package stacking |
WO2009110095A1 (fr) * | 2008-03-07 | 2009-09-11 | 富士通株式会社 | Matériau conducteur, pâte conductrice, carte de circuit imprimé et dispositif à semi-conducteur |
US7569935B1 (en) * | 2008-11-12 | 2009-08-04 | Powertech Technology Inc. | Pillar-to-pillar flip-chip assembly |
JP5223666B2 (ja) | 2008-12-26 | 2013-06-26 | 富士通株式会社 | 回路基板の製造方法及び半導体装置の製造方法 |
WO2010103940A1 (fr) * | 2009-03-09 | 2010-09-16 | 株式会社村田製作所 | Circuit imprimé de résine |
US8299341B2 (en) * | 2009-05-13 | 2012-10-30 | The California Institute Of Technology | Fabrication of vertically aligned metallic nanopillars |
TWI469288B (zh) * | 2009-06-11 | 2015-01-11 | Chipbond Technology Corp | 凸塊化晶片結構及其應用之半導體覆晶裝置 |
US8143704B2 (en) * | 2009-10-02 | 2012-03-27 | Texas Instruments Incorporated | Electronic assemblies including mechanically secured protruding bonding conductor joints |
US8786062B2 (en) * | 2009-10-14 | 2014-07-22 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and process for fabricating same |
JP5444050B2 (ja) | 2010-03-12 | 2014-03-19 | 三菱製紙株式会社 | ソルダーレジストパターンの形成方法 |
US8669137B2 (en) * | 2011-04-01 | 2014-03-11 | International Business Machines Corporation | Copper post solder bumps on substrate |
KR20130076286A (ko) * | 2011-12-28 | 2013-07-08 | 삼성전기주식회사 | 인쇄회로기판 및 그의 제조방법 |
-
2013
- 2013-07-29 JP JP2013555696A patent/JP5513694B1/ja not_active Expired - Fee Related
- 2013-07-29 CN CN201380046617.0A patent/CN104604341B/zh not_active Expired - Fee Related
- 2013-07-29 KR KR1020157008427A patent/KR101622895B1/ko active IP Right Grant
- 2013-07-29 EP EP13834871.9A patent/EP2894951B1/fr not_active Not-in-force
- 2013-07-29 WO PCT/JP2013/004588 patent/WO2014038125A1/fr active Application Filing
- 2013-07-29 US US14/416,254 patent/US10123415B2/en active Active
- 2013-09-05 TW TW102131921A patent/TWI492678B/zh not_active IP Right Cessation
Non-Patent Citations (1)
Title |
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None * |
Also Published As
Publication number | Publication date |
---|---|
US20150189752A1 (en) | 2015-07-02 |
KR20150052212A (ko) | 2015-05-13 |
JP5513694B1 (ja) | 2014-06-04 |
EP2894951A4 (fr) | 2016-08-10 |
JPWO2014038125A1 (ja) | 2016-08-08 |
TW201424481A (zh) | 2014-06-16 |
EP2894951A1 (fr) | 2015-07-15 |
TWI492678B (zh) | 2015-07-11 |
KR101622895B1 (ko) | 2016-05-19 |
WO2014038125A1 (fr) | 2014-03-13 |
CN104604341B (zh) | 2017-12-22 |
US10123415B2 (en) | 2018-11-06 |
CN104604341A (zh) | 2015-05-06 |
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