EP2151299A3 - Chemical mechanical polishing pad - Google Patents

Chemical mechanical polishing pad Download PDF

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Publication number
EP2151299A3
EP2151299A3 EP09154680.4A EP09154680A EP2151299A3 EP 2151299 A3 EP2151299 A3 EP 2151299A3 EP 09154680 A EP09154680 A EP 09154680A EP 2151299 A3 EP2151299 A3 EP 2151299A3
Authority
EP
European Patent Office
Prior art keywords
density
polishing pad
polymeric matrix
percent
isocyanate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP09154680.4A
Other languages
German (de)
French (fr)
Other versions
EP2151299B1 (en
EP2151299A2 (en
Inventor
Mary Jo Kulp
T. Todd Crkvenac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of EP2151299A2 publication Critical patent/EP2151299A2/en
Publication of EP2151299A3 publication Critical patent/EP2151299A3/en
Application granted granted Critical
Publication of EP2151299B1 publication Critical patent/EP2151299B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

The polishing pad is for polishing patterned semiconductor substrates. The pad includes a polymeric matrix and hollow polymeric particles within the polymeric matrix. The polymeric matrix is a polyurethane reaction product of a curative agent and an isocyanate-terminated polytetramethylene ether glycol at an NH2 to NCO stoichiometric ratio of 80 to 97 percent. The isocyanate-terminated polytetramethylene ether glycol has an unreacted NCO range of 8.75 to 9.05 weight percent. The hollow polymeric particles having an average diameter of 2 to 50 µm and a wt%b and densityb of constituents forming the polishing pad as follows: wt % a * density b density a = wt % b
Figure imga0001
where densitya equals an average density of 60 g/l, where densityb is an average density of 5 g/l to 500g/l, where wt%a is 3.25 to 4.25 wt%. The polishing pad has a porosity of 30 to 60 percent by volume; and a closed cell structure within the polymeric matrix forms a continuous network surrounding the closed cell structure.
EP09154680.4A 2008-08-05 2009-03-09 Chemical mechanical polishing pad Active EP2151299B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/221,581 US20100035529A1 (en) 2008-08-05 2008-08-05 Chemical mechanical polishing pad

Publications (3)

Publication Number Publication Date
EP2151299A2 EP2151299A2 (en) 2010-02-10
EP2151299A3 true EP2151299A3 (en) 2013-06-19
EP2151299B1 EP2151299B1 (en) 2014-06-11

Family

ID=41203879

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09154680.4A Active EP2151299B1 (en) 2008-08-05 2009-03-09 Chemical mechanical polishing pad

Country Status (6)

Country Link
US (1) US20100035529A1 (en)
EP (1) EP2151299B1 (en)
JP (1) JP2010041056A (en)
KR (1) KR20100017064A (en)
CN (1) CN101642897B (en)
TW (1) TWI482789B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8257544B2 (en) 2009-06-10 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having a low defect integral window
US8551201B2 (en) * 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
JP5528169B2 (en) 2010-03-26 2014-06-25 東洋ゴム工業株式会社 Polishing pad, method for manufacturing the same, and method for manufacturing a semiconductor device
JP5534907B2 (en) * 2010-03-31 2014-07-02 富士紡ホールディングス株式会社 Polishing pad and method of manufacturing polishing pad
US8257545B2 (en) 2010-09-29 2012-09-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
US9211628B2 (en) 2011-01-26 2015-12-15 Nexplanar Corporation Polishing pad with concentric or approximately concentric polygon groove pattern
JP5738728B2 (en) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 Polishing pad
JP5738731B2 (en) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 Polishing pad
JP5738730B2 (en) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 Polishing pad
US9079289B2 (en) * 2011-09-22 2015-07-14 Toyo Tire & Rubber Co., Ltd. Polishing pad
JP5738729B2 (en) * 2011-09-22 2015-06-24 東洋ゴム工業株式会社 Polishing pad
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
US9102034B2 (en) 2013-08-30 2015-08-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a substrate
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
TWI518176B (en) 2015-01-12 2016-01-21 三芳化學工業股份有限公司 Polishing pad and method for making the same
US10946495B2 (en) * 2015-01-30 2021-03-16 Cmc Materials, Inc. Low density polishing pad
JP2017185563A (en) * 2016-04-01 2017-10-12 富士紡ホールディングス株式会社 Polishing pad
KR101853021B1 (en) * 2017-01-12 2018-04-30 에스케이씨 주식회사 Porous polyurethane polishing pad and preparation method thereof
KR102102973B1 (en) * 2017-11-14 2020-04-22 에스케이씨 주식회사 Polishing pad
KR102058877B1 (en) * 2018-04-20 2019-12-24 에스케이씨 주식회사 POROUS POLYURETHANE POLISHING PAD and PREPARATION METHOD THEREOF
KR102188525B1 (en) * 2019-10-29 2020-12-08 에스케이씨 주식회사 Polishing pad, preparation method thereof, and preparation method of semiconductor device using same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169030B1 (en) * 2006-05-25 2007-01-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20070275226A1 (en) * 2006-05-25 2007-11-29 Mary Jo Kulp Chemical mechanical polishing pad
US20080182492A1 (en) * 2007-01-29 2008-07-31 Crkvenac T Todd Chemical mechanical polishing pad

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MY114512A (en) * 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
US6514301B1 (en) * 1998-06-02 2003-02-04 Peripheral Products Inc. Foam semiconductor polishing belts and pads
US6362107B1 (en) * 1998-11-09 2002-03-26 Toray Industries, Inc. Polishing pad and polishing device
KR100707407B1 (en) * 2000-06-13 2007-04-13 도요 고무 고교 가부시키가이샤 Process for producing polyurethane foam, polyurethane foam, and abrasive sheet
US20050171224A1 (en) * 2004-02-03 2005-08-04 Kulp Mary J. Polyurethane polishing pad
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
JP4475404B2 (en) * 2004-10-14 2010-06-09 Ｊｓｒ株式会社 Polishing pad
US7371160B1 (en) * 2006-12-21 2008-05-13 Rohm And Haas Electronic Materials Cmp Holdings Inc. Elastomer-modified chemical mechanical polishing pad

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169030B1 (en) * 2006-05-25 2007-01-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US20070275226A1 (en) * 2006-05-25 2007-11-29 Mary Jo Kulp Chemical mechanical polishing pad
US20080182492A1 (en) * 2007-01-29 2008-07-31 Crkvenac T Todd Chemical mechanical polishing pad

Also Published As

Publication number Publication date
EP2151299B1 (en) 2014-06-11
CN101642897B (en) 2011-08-03
KR20100017064A (en) 2010-02-16
TW201006854A (en) 2010-02-16
US20100035529A1 (en) 2010-02-11
CN101642897A (en) 2010-02-10
JP2010041056A (en) 2010-02-18
TWI482789B (en) 2015-05-01
EP2151299A2 (en) 2010-02-10

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