EP2143140A2 - Methode de fabrication d'un module de puissance rigide - Google Patents

Methode de fabrication d'un module de puissance rigide

Info

Publication number
EP2143140A2
EP2143140A2 EP08748729A EP08748729A EP2143140A2 EP 2143140 A2 EP2143140 A2 EP 2143140A2 EP 08748729 A EP08748729 A EP 08748729A EP 08748729 A EP08748729 A EP 08748729A EP 2143140 A2 EP2143140 A2 EP 2143140A2
Authority
EP
European Patent Office
Prior art keywords
stamped grid
grid
tool
fixing
molding compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08748729A
Other languages
German (de)
English (en)
Inventor
Holger Ulrich
Teoman Senyiliz
Ronald Eisele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
Original Assignee
Danfoss Silicon Power GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Priority to EP10008598A priority Critical patent/EP2261971A1/fr
Publication of EP2143140A2 publication Critical patent/EP2143140A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
    • H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the invention relates to a method for producing a fixed power module with the method steps of the preamble of the main claim.
  • a known embodiment of power modules consists of open power semiconductors, which are soldered or glued directly onto metal stamped grid (so-called die-on-leadframe).
  • the individual stamped grids are typically fixed by a plastic frame, which is produced by transfer molding of the stamped grid parts inserted into the injection tool.
  • the stamped grid parts carry the components within the sprayed frame and outside the frame, the terminal lugs of the stamped grid parts represent the electrical connection of the assembly to other components.
  • the stamped grid parts of such power modules are distributed over several levels and must be electrically isolated from each other and thereby forcibly Mehrg- Hg.
  • the lowest level is equipped on the inside with semiconductors and the opposite metal side of the lowest punched grid facing an outer cooling surface.
  • Such modules do not have a substrate plate (e.g., DCB ceramic circuit board) or even a copper plate for heat spreading.
  • the missing substrate plate or missing base plate, removes the stiffness between the screw-on points to the module in order to develop the contact pressure sufficiently, which squeezes out the paste thinly.
  • Punching frame modules with an open interior volume behave like a multi-joint system of strips when screwed on. This leads to cushioning of the thermal compound in the thermally stressed center of the module.
  • Thermal paste in the middle is often 3-4 times thicker because of the lack of rigidity than at the edge of the substrateless module.
  • the object of the invention is to provide a method for generating power modules with increased rigidity, which also withstand a large number of heating cycles and also meet high mechanical requirements, such as those prevailing in motor vehicle technology, for example.
  • a stamped grid first, then by attaching the grid to the semiconductor components and creating the bond connections, subsequently introducing this assembled stand grid into a pressing tool, fixing the stamped grid in the pressing tool by fixation punches and wrapping the stamped grid with a thermosetting molding compound a pressing step a glass produces a hard power module, in particular, when the molding compound has the same thermal expansion coefficient as the main components of the enclosed structure.
  • This enclosed structure protects the semiconductors and their thin bond connections from all thermal damage but also from thermal cycling induced creep of individual materials.
  • the dominant material will be copper in copper stamped grids, but it may also be the material of the heat conductor plate if it is made of a material other than copper.
  • the thermal expansion coefficient of the molding compound by adding only slightly expanding particles, e.g. to adjust to a capacity of 80-90% of a SiO2 powder. That if desired, less than 80% of the admixture may take place, or may be an admixture of one part of a powder and another part of another powder. Also both powders can be or contain SiO 2 and differ only in the particle size (s). Certain particle size distributions may also be provided to adjust the strength.
  • the molding compound can also be produced with a coefficient of thermal expansion between the two main materials of the power module, which are advantageously chosen close to each other, wherein the thermal expansion coefficient can be adjusted very precisely in its thermal expansion, for example by the addition of low-expansion silica powder.
  • the thermal expansion coefficient can be adjusted very precisely in its thermal expansion, for example by the addition of low-expansion silica powder.
  • the compression molding is advantageously carried out at a pressure of 150-250 bar 200-210 bar, with temperatures in the range of 150-220 - A -
  • fixation punches are advantageously firmly anchored in the tool in corresponding guides and should be withdrawn for reuse in time before cooling the molding compound, thereby creating holes in the casing of the labmudoduls, can divide the punching grid into individual islands by the puncture punches, if the Fixationsstempellöcher are designed with a diameter larger than the width of the conductor tracks to be cut through. Furthermore, it will preferably be important to ensure that a bare surface of the power module remains during pressing, can be done at the heat dissipation of the semiconductor to the outside.
  • the resulting holes can be filled by potting, so as to complete the cladding body and to ensure the completion of the semiconductor.
  • the stamped grid can be laid before punching on the later side of the cooling with a known method of thermal spraying with a thin layer of ceramic particles.
  • Suitable materials are aluminum oxide or aluminum nitride.
  • Suitable layer thicknesses are e.g. between 20 and 100 ⁇ m.
  • This highly thermally conductive ceramic layer (approx. 25-160 W / mK compared to approx. 1 W / mK for a conventional thermal compound eg Dow Corning Thermal Compound 340) is connected by the selected method in material connection with the stamped grid and by the now possible high Mounting pressure in positive contact with the outer heat sink.
  • the coating with a ceramic functional layer by thermal spraying is also possible after wrapping the stamped grid. Then, in the coating process, only the side of the Module body provided with ceramic, which is used over the exposed stamped grid surfaces for cooling.
  • Another embodiment is the use of the punched
  • Openings to eliminate the fixing webs of the islands
  • an insulating sleeve (glued in addition as moisture protection) is inserted together with the screw in the opening.
  • Islands and the necessary punch-through holes are preferably in the inner region of the module surface. This inner area (close to the center) is also the area of maximum warming. Pressing on the module by screwing on, especially around the screw bushing, produces the highest pressing forces and thus the lowest resulting layer thickness of a thermal conductive paste. The close-to-center mounting through the already existing punched holes thus produces an additional improvement in the heat dissipation of the module. Further areas for mounting holes (outside the stamped grid area in the wrapping body) can therefore be omitted. This reduces the volume and thus the cost of the molding compound.
  • Be provided in the region of the inner and outer bonding surfaces with a preferably strip-like aluminum layer.
  • the layer of aluminum for punching the stamped grid is connected by a suitable adhesive with the stamped grid and thus forms a Schichrverbund at the places where a bond must be formed. at proportionately small aluminum surfaces, this is a cost-effective alternative to roll cladding (is carried out in large lengths in strips, islands of aluminum surfaces are not possible in Walzplattiertechnik)
  • FIG. 5 shows the stamped grid (shown without wrapping) with two paint holes produced after punching out of the webs by stamp-like punching tools
  • FIG. 6 shows a further embodiment of the stamped grid, in which the punched holes serve as punched holes further as through openings for mounting screws, which are carried out for this purpose in an insulating sleeve,
  • Fig. 7 is a perspective view using the punched holes (to eliminate the fixing webs of the islands) as Autobowungsöffhungen for mounting screws with their
  • Insulation sleeves are also shown, and
  • Fig. 8 is a sectional view when using placeholders. While manufacturing steps in the prior art described at the outset force a double cladding technique (step 2 and step 4 of the list below), the transistor module according to the invention is pressed in one step with a stamped grid and semiconductor components in a coating of a thermosetting molding compound.
  • the method for producing a power module comprising the steps of producing a stamped grid, populating the stamped grid with semiconductor components, any passive components and bonding corresponding compounds, inserting the thus equipped punched grid in a pressing tool, fixing the punched grid in the tool by fixation punches, and pressing a thermoset Press molding compound in the tool while enclosing the populated stamped grid is easy to control in the invention.
  • fixation punches may be withdrawn prior to hardening of the molding compound, but especially before the molding compound intimately bonds with them.
  • the fixing of the stamped grid in the tool should be effected by fixation punches acting on connecting webs, the width of which is greater than the width of the connecting webs and a cooling surface in such a way when fixing by fixation punches the side of the tool are pressed so that it is not coated with (molding) wrapping with molding compound.
  • the populated stamped grid can be divided into a plurality of separate subframes for generating a plurality of electrically separated devices in the module body, and so on Technique prevailing problem in the design of interconnect islands in the path trace of the stamped grid to solve.
  • Punching grids are always interconnected arrangements of conductor tracks and areas for semiconductors and other components. Island structures were previously not possible because all-round punched-out conductor surfaces of the stamped grid would not be stationary without fixation. This forced solutions in different levels, with the disadvantages described above.
  • the rigidity of the module can be achieved by filling the module body in a full volume by means of transfer molding with a duroplastic hard glassy polymer material (for example Henkel
  • the punched grid consists of only a single and one-piece layer of conductive material, such as Cu.
  • the later necessary islands are held in position by at least one connection with the rest of the stamped grid. Typically, islands with two or three lands are stabilized. Solutions are also possible in which a bridge fixes two later islands.
  • the single punched grid is covered by the molding compound, the track island is additionally fixed by the hardened molding compound and can not change the position.
  • the islands to be separated from the stamped grid (and also electrically isolated) in the conductor track guide are formed only after filling by compression molding.
  • the filled envelope body receives openings which are removed by bare stamps (round or square) are created during the filling phase.
  • the punches are part of the mold tool and are axially displaceable. The resulting openings extend from the top of the module body in the interior of the module to the inside of the stamped grid.
  • the stamp thus presses on the still unseparated punched grid and additionally fixes it flush with the bottom of the lower tool, thus ensuring a stepless transition of the molding compound to the externally visible stamped grid.
  • stamping punches penetrate the covering body at the locations of the prepared openings and separate the fixing webs of the island (s) from the rest of the strip conductors.
  • FIG. 2 shows by way of example a circuit diagram for a B6 transistor bridge circuit.
  • FIG. 1 shows a one-piece and single-layer stamped grid for such a B6 transistor bridge. All required surfaces are still connected by one or more webs.
  • Fig. 3 the manufacturing step of soldering the power semiconductors and other passive components (thermistor, resistors, capacitors, shunts) is already completed. Subsequently, the necessary wire bonds for electrical full contacting were made on the unchanged stamped grid.
  • Fig. 4 follows the manufacturing step of wrapping by compression molding of the unchanged, but equipped stamped grid. The wrapping body has received by the shape of the tool its outer dimensions and in this way also two holes for unscrewing. The aforementioned axial punches in the tool have left two blind holes through the cladding body up to the punched grid surface (inner small holes).
  • Fig. 5 shows the power module in the enclosure body with externally punched contact surfaces for the electrical connection and Fig. 6, the punched grid, which arises after punching the webs by stamp-like punching tools below the blind holes.
  • the islands are mechanically and electrically separated from the other stamped grid surfaces. However, this takes place within the wrapper body and is thus not visible (unless one chemically dissolves the wrapper plastic and retains that Punched grid back). It can be seen that the 2 punched holes produce a total of 4 islands.
  • Fig. 7 shows a further embodiment with the use of punched openings (to eliminate the fixing webs of the islands) as suitssöffhungen for mounting screws.
  • an insulating sleeve (glued in addition as moisture protection) is inserted together with the screw in the opening.
  • the free punching of the assembled, one-piece stamped grid can also not take place through recesses, but rather through fixing bodies previously inserted at the predetermined positions ("sacrificed hold-downs").
  • These fixing placeholder bodies can be made of a solid material or partially hollow and have to fulfill the condition that they can be penetrated by the free-punching tool (elastomers).
  • Fig. 8 shows the Transitormodul Sciences of molding compound in cross section. Shown is the one-piece stamped grid and a placeholder body for fixing the stamped grid in the tool.
  • the placeholder body is already placed on the stamped grid with components during the placement process and conceals the connecting webs of the islands, which are later to be electrically insulated by free punching. By closing the mold halves of the placeholder body is clamped between the tool wall and stamped grid and therefore fixes the stamped grid in the tool.
  • the molding compound remains in the placeholder body in the tool and is partially surrounded by molding compound and fixed therein.
  • the tool-guided punches described above are not required.
  • the placeholder body is made of a temperature-resistant and elastic material, which on the one hand enables the clamping function in the tool and on the other hand the penetration and displacement by the free-punching tool.
  • this is an elastomer z.
  • silicone for example, silicone.
  • the method of manufacturing a power module is through the steps of: creating a punched grid, populating the stamped grid with semiconductor devices, eventually gene passive components and bonding corresponding compounds, introducing the thus equipped punched grid in a pressing tool, fixing the punched grid in the tool described by fixation punches, and pressing a duroplastic molding compound in the tool under the envelope of the assembled punched grid.
  • the stamped grid is in one piece, and recesses remain at predetermined positions during wrapping, so that accessibility of the unenclosed stamped grid is ensured, and subsequent separation of webs of the one-piece stamped grid is carried out by the inserted into the recesses punch, below Generation of electrically isolated islands of stamped grid materials of the former one-piece stamped grid.
  • the punches are retracted before hardening of the molding compound.
  • the punches will be withdrawn before the molding compound intimately bonds with them.
  • the fixing of the stamped grid is carried out in the tool by acting on connecting webs punch whose width is greater than the width of the connecting webs.
  • the free punching of the assembled, one-piece stamped grid can not be done through recesses, but by previously inserted at the predetermined positions, fixing dummy body, so that a transistor module with a lead frame and semiconductor devices in a cladding of a thermosetting molding compound whose thermal expansion coefficient the dominant components of the power module is adjusted by appropriate admixture of low-expansion material of predetermined grain distribution.
  • a transistor module is preferable that when fixing by stamp or by the fixing placeholder body, a cooling surface is pressed to the side of the tool so that it is not coated with molding compound during (partial) wrapping, and thus to a part of the outer surface of the transistor module.
  • a further embodiment uses a built-in in the free punching of the former one-piece stamped lead-throughs in the transistor module body inserted, the metallic screws or rivets electrically insulating plug-in sleeve.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

L'invention concerne un procédé pour produire un module de puissance rigide. Selon ce procédé, une grille de connexion est produite en une pièce; cette grille de connexion est équipée de composants à semi-conducteurs et de composants passifs éventuels et les connexions correspondantes sont établies; la grille de connexion ainsi équipée est placée dans un outil de compression de sorte que la grille de connexion non enrobée soit accessible; la grille de connexion est fixée dans l'outil au moyen de matrices de fixation; une matière plastique thermodurcissable à mouler par compression est comprimée dans l'outil de façon à enrober la grille de connexion équipée. Le procédé selon l'invention se caractérise en ce que, lors du processus d'enrobage, des évidements sont ménagés à des emplacements prédéterminés dans l'enrobage dans le module de puissance, puis des pièces jointives de la grille de connexion en une pièce sont découpées au moyen de matrices de découpage introduites dans les évidements de façon à produire des îlots électriquement isolés constitués de matériaux de la grille de connexion antérieurement en une pièce.
EP08748729A 2007-04-30 2008-04-02 Methode de fabrication d'un module de puissance rigide Withdrawn EP2143140A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10008598A EP2261971A1 (fr) 2007-04-30 2008-04-02 Procede de fabrication d'un module de puissance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007020618A DE102007020618B8 (de) 2007-04-30 2007-04-30 Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
PCT/DE2008/000566 WO2008131713A2 (fr) 2007-04-30 2008-04-02 Dispositif pour graver des plaquettes de semi-conducteurs de grande surface

Publications (1)

Publication Number Publication Date
EP2143140A2 true EP2143140A2 (fr) 2010-01-13

Family

ID=39684220

Family Applications (2)

Application Number Title Priority Date Filing Date
EP10008598A Withdrawn EP2261971A1 (fr) 2007-04-30 2008-04-02 Procede de fabrication d'un module de puissance
EP08748729A Withdrawn EP2143140A2 (fr) 2007-04-30 2008-04-02 Methode de fabrication d'un module de puissance rigide

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP10008598A Withdrawn EP2261971A1 (fr) 2007-04-30 2008-04-02 Procede de fabrication d'un module de puissance

Country Status (4)

Country Link
EP (2) EP2261971A1 (fr)
CN (1) CN101689538B (fr)
DE (1) DE102007020618B8 (fr)
WO (1) WO2008131713A2 (fr)

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DE102009014794B3 (de) * 2009-03-28 2010-11-11 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines für Hochvoltanwendungen geeigneten festen Leistungsmoduls und damit hergestelltes Leistungsmodul
JP5793995B2 (ja) * 2011-06-28 2015-10-14 トヨタ自動車株式会社 リードフレーム、及び、パワーモジュール
EP2927954B1 (fr) 2014-04-02 2021-06-09 Brusa Elektronik AG Système de fixation pour un module de puissance
DE102015200480A1 (de) 2015-01-14 2016-07-14 Robert Bosch Gmbh Kontaktanordnung und Leistungsmodul
EP3770956A1 (fr) 2019-07-25 2021-01-27 ABB Schweiz AG Module d'alimentation à semi-conducteur

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DE102005061773B3 (de) * 2005-12-23 2007-05-16 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul

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DE102007020618B3 (de) 2008-10-30
CN101689538B (zh) 2012-08-08
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EP2261971A1 (fr) 2010-12-15
WO2008131713A3 (fr) 2008-12-31
DE102007020618B8 (de) 2009-03-12

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