EP1917667B1 - Hf terminating resistor having a planar layer structure - Google Patents
Hf terminating resistor having a planar layer structure Download PDFInfo
- Publication number
- EP1917667B1 EP1917667B1 EP06776894A EP06776894A EP1917667B1 EP 1917667 B1 EP1917667 B1 EP 1917667B1 EP 06776894 A EP06776894 A EP 06776894A EP 06776894 A EP06776894 A EP 06776894A EP 1917667 B1 EP1917667 B1 EP 1917667B1
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- conductor
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- earthing
- resistor
- layer structure
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- 239000004020 conductor Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C13/00—Resistors not provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
- H01P1/268—Strip line terminations
Definitions
- the present invention relates to an RF termination resistor having a planar layer structure comprising on a substrate a resistance layer for converting RF energy to heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, the input line is electrically connected to a first end of the resistive layer and the grounding conductor is electrically connected to a first end opposite the second end of the resistive layer and at a ground contact end of the layered structure, the bulk starting conductor forms the uppermost layer of the layered structure, according to the preamble of claim 1.
- the invention further relates to a method for producing a planar layer structure for an RF termination resistor, wherein on a substrate, a resistance layer for converting RF energy into heat, an input conductor for feeding n of RF energy and a grounding conductor for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer and the grounding conductor is electrically connected to a first end opposite the second end of the resistive layer, according to the preamble of Claim 6.
- RF terminating resistors are used, for example, for adapting RF modules in the mobile and microwave radio range with very high transmission powers, for example for terminating a combiner or antenna output.
- High power dissipation terminators have large resistor structures to distribute the injected RF power to this area. This works However, unfavorable to the reflection factor in broadband application, or the terminating resistor is used with the same reflection factors only in a narrower frequency band.
- EP 1460710 shows an RF terminating resistor with a planar layer structure.
- the invention has for its object to design a RF termination of the above type and a method of the type mentioned above such that the ground terminal of the resistor structure of the substrate to the ground contact, such as a housing wall, on the one hand very short, to the most accurate adaptation of the On the other hand, however, to obtain characteristic impedance that can still form a good solder joint for the ground contact between the ground strip conductor and ground contact.
- the ground strip conductor track is at least partially disposed on the resistor layer.
- the resistive layer is formed on the substrate and then the grounding conductor track is at least partially formed on the resistive layer.
- the grounding conductor track is arranged on the substrate and has an extension extending in the direction of the first end of the resistance layer, which is arranged on the resistance layer.
- a good and functionally reliable producible electrical contact between the ground strip conductor and the ground contact is achieved by an upper side facing away from the substrate of the bulk conductor track both in the region of the ground contact end of the layer structure, in which the ground strip conductor rests on the substrate, as well as in the Extension, in which the mass insertion conductor rests on the resistance layer extends in a plane.
- the planar layer structure is arranged in a housing of electrically conductive material, wherein the ground contact is the housing.
- the ground contact is arranged on a ground contact-side end face of the planar layer structure.
- the apparent, preferred embodiment of an RF termination resistor comprises a resistance layer 10, an input conductor 12 and a grounding conductor 14.
- the resistance layer 10, the input conductor 12 and the grounding conductor 14 are formed as respective layers on a substrate 16 and form a planar layer structure.
- the input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18.
- the resistive layer 10 is for converting RF energy into heat
- the input trace 12 is for supplying RF energy
- the bulk launch trace 14 is for electrically connecting to a ground contact 22 (FIG. Fig. 2 ).
- the resistive layer 10 and the grounding conductor 14 formed planar layer structure is made of Fig. 2 closer.
- the ground contact 22 is arranged frontally on a ground contact-side end of the layer structure and is for example a part of a housing.
- This housing is made of an electrically conductive material and thereby also has good Wänne effetseigenschaften so that the resultant in the resistive layer 10 heat energy is dissipated through the housing to a heat sink.
- the grounding conductor 14 provides electrical contact between the resistive layer 10 and the housing 22.
- the grounding conductor track 14 is arranged at least partially on the resistance layer 10.
- the Masseeanschussleiterbahn 14 arranged on the substrate 16.
- Extending in the direction of the first end 18 of the resistive layer 10 is an extension 24 of the bulk starting conductor 14, which is arranged on the resistive layer 10, ie, the resistive layer 10 is arranged in the region of the extension 24 between the substrate 16 and the grounding conductor layer 14.
- a side facing away from the substrate 16 top 26 of the bulk slotted conductor 14 extends both in the region of the ground contact-side end of the layer structure in which the bulk slotted conductor 14 rests on the substrate 16, as well as in the region of the extension 24 in which the Masseneanschussleiter- web 14 on the resistance layer 10 rests in a plane.
- This planar upper side 26 of the grounding conductor 14 serves to establish the electrical contact with the housing 22, wherein a solder connection is preferably produced.
- a length 28 of the grounding conductor 14, i. an extension of the mass insertion conductor 14 in the propagation direction of the RF wave have a certain minimum length, since otherwise no sufficient Lotkehle can form.
- a method of fabricating a planar laminar structure for an RF termination comprising forming on a substrate a resistive layer for converting RF energy to heat, an input line for supplying RF energy, and a bulk bus for electrically connecting to a ground contact Input conductor is electrically connected to a first end of the resistive layer and the Masseeingschussleiterbahn is electrically connected to a first end opposite the second end of the resistive layer, characterized in that first the resistive layer is formed on the substrate and thereafter the Masseeingschussleiterbahn at least partially formed on the resistive layer becomes.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Details Of Resistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
Description
Die vorliegende Erfindung betrifft einen HF-Abschlusswiderstand mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und an einem massekontaktseitigen Ende der Schichtstruktur die Masseanschussleiterbahn die oberste Schicht der Schichtstruktur ausbildet, gemäß dem Oberbegriff des Anspruchs 1. Die Erfindung betrifft ferner ein Verfahren zum Herstellen einer planaren Schichtstruktur für einen HF-Abschlusswiderstand, wobei auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt ausgebildet wird, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden wird und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden wird, gemäß dem Oberbegriff von Anspruch 6.The present invention relates to an RF termination resistor having a planar layer structure comprising on a substrate a resistance layer for converting RF energy to heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, the input line is electrically connected to a first end of the resistive layer and the grounding conductor is electrically connected to a first end opposite the second end of the resistive layer and at a ground contact end of the layered structure, the bulk starting conductor forms the uppermost layer of the layered structure, according to the preamble of claim 1. The invention further relates to a method for producing a planar layer structure for an RF termination resistor, wherein on a substrate, a resistance layer for converting RF energy into heat, an input conductor for feeding n of RF energy and a grounding conductor for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer and the grounding conductor is electrically connected to a first end opposite the second end of the resistive layer, according to the preamble of Claim 6.
HF-Abschlusswiderstände finden beispielsweise für die Anpassung von HF-Baugruppen im Mobil- und Richtfunkbereich mit sehr hohen Sendeleistungen Anwendung, z.B. zum Abschluss eines Combiners oder Antennenausganges. Abschlusswiderstände erhöhter Verlustleistung besitzen große Widerstandsstrukturen, um die eingekoppelte HF-Leistung auf diese Fläche zu verteilen. Dies wirkt sich jedoch ungünstig auf den Reflexionsfaktor bei breitbandiger Anwendung aus, bzw. der Abschlusswiderstand ist bei gleichen Reflexionsfaktoren lediglich in einem schmaleren Frequenzband verwendbar.RF terminating resistors are used, for example, for adapting RF modules in the mobile and microwave radio range with very high transmission powers, for example for terminating a combiner or antenna output. High power dissipation terminators have large resistor structures to distribute the injected RF power to this area. This works However, unfavorable to the reflection factor in broadband application, or the terminating resistor is used with the same reflection factors only in a narrower frequency band.
Bei den oben erwähnten HF-Abschlusswiderständen sind spezielle Konstruktionen der Substratstrukturen notwenig, um durch diese den sehr hohen technischen Ansprüchen gerecht zu werden.
Diese Aufgabe wird erfindungsgemäß durch einen HF-Abschlusswiderstand der o.g. Art mit den in Anspruch 1 gekennzeichneten Merkmalen und durch ein Verfahren der o.g. Art mit den in Anspruch 6 gekennzeichneten Merkmalen gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den weiteren Ansprüchen beschrieben.This object is achieved by an RF termination of o.g. Art having the features characterized in claim 1 and by a method of o.g. Art solved with the features characterized in claim 6. Advantageous embodiments of the invention are described in the further claims.
Bei einem HF-Abschlusswiderstand der o.g. Art ist es erfindungsgemäß vorgesehen, dass die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht angeordnet ist.For an RF termination of the o.g. Art it is provided according to the invention that the ground strip conductor track is at least partially disposed on the resistor layer.
Bei einem Verfahren der o.g. Art ist es erfindungsgemäß vorgesehen, dass zuerst die Widerstandsschicht auf dem Substrat ausgebildet wird und danach die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht ausgebildet wird.In a method of o.g. It is inventively provided that first the resistive layer is formed on the substrate and then the grounding conductor track is at least partially formed on the resistive layer.
Dies hat den Vorteil, dass die Oberseite der Masseanschussleiterbahn vollständig frei liegt und damit für die Kontaktierung mit dem Massekontakt vollständig zur Verfügung steht. Hierdurch ist es möglich, die Masseanschussleiterbahn so kurz wie für eine ausreichende elektrische. Verbindung mit dem Massekontakt nötig auszubilden, so dass die negativen elektrischen Auswirkungen des Masseanschlusses auf die Anpassung des Wellenwiderstandes des HF-Abschlusswiderstandes minimiert und gleichzeitig die zur elektrischen Kontaktierung zur Verfügung stehende Oberfläche maximiert werden kann.This has the advantage that the upper side of the ground starting conductor is completely exposed and thus completely available for contacting with the ground contact. This makes it possible, the ground strip conductor so short as for a sufficient electrical. Make connection with the ground contact necessary, so that the negative electrical effects of the ground terminal on the adjustment of the characteristic impedance of the RF termination resistance minimized while the surface available for electrical contacting surface can be maximized.
In einer bevorzugten Ausführungsform ist am massekontaktseitigen Ende der Schichtstruktur die Masseanschussleiterbahn auf dem Substrat angeordnet und weist eine sich in Richtung des ersten Endes der Widerstandsschicht erstreckende Erweiterung auf, die auf der Widerstandsschicht angeordnet ist.In a preferred embodiment, at the ground contact-side end of the layer structure, the grounding conductor track is arranged on the substrate and has an extension extending in the direction of the first end of the resistance layer, which is arranged on the resistance layer.
Eine gute und funktionssicher herstellbare elektrische Kontaktierung zwischen der Masseanschussleiterbahn und dem Massekontakt erzielt man dadurch, dass sich eine von dem Substrat abgewandte Oberseite der Masseanschussleiterbahn sowohl im Bereich des massekontaktseitigen Endes der Schichtstruktur, in dem die Masseanschussleiterbahn auf dem Substrat aufliegt, als auch im Bereich der Erweiterung, in dem die Masseanschussleiterbahn auf der Widerstandsschicht aufliegt, in einer Fläche erstreckt.A good and functionally reliable producible electrical contact between the ground strip conductor and the ground contact is achieved by an upper side facing away from the substrate of the bulk conductor track both in the region of the ground contact end of the layer structure, in which the ground strip conductor rests on the substrate, as well as in the Extension, in which the mass insertion conductor rests on the resistance layer extends in a plane.
Zum Abführen der in der Widerstandsschicht erzeugten Wärme ist die planare Schichtstruktur in einem Gehäuse aus elektrisch leitendem Werkstoff angeordnet, wobei der Massekontakt das Gehäuse ist.For discharging the heat generated in the resistance layer, the planar layer structure is arranged in a housing of electrically conductive material, wherein the ground contact is the housing.
Zweckmäßigerweise ist der Massekontakt an einer massekontaktseitigen Stirnfläche der planaren Schichtstruktur angeordnet.Expediently, the ground contact is arranged on a ground contact-side end face of the planar layer structure.
Die Erfindung wird im Folgenden anhand der Zeichnung näher erläutert. Diese zeigt in:
- Fig. 1
- eine bevorzugte Ausführungsform eines erfindungsgemäßen HF-Abschlusswiderstands in Aufsicht,
- Fig. 2
- den HF-Abschlusswiderstand von
Fig. 1 in schematischer Schnittansicht, - Fig. 3
- eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für eine Länge der Masseanschussleiterbahn von L = 0,6 mm und
- Fig. 4
- eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für eine Länge der Masseanschussleiterbahn von L = 1,1 mm
- Fig. 1
- a preferred embodiment of an RF termination resistor according to the invention in supervision,
- Fig. 2
- the RF termination of
Fig. 1 in a schematic sectional view, - Fig. 3
- a graph showing the adjustment of the characteristic impedance over the frequency for a length of the bulk conductor track of L = 0.6 mm and
- Fig. 4
- a graph showing the adjustment of the characteristic impedance over the frequency for a length of the bulk starting conductor of L = 1.1 mm
Die aus
Die von der Eingangsleiterbahn 12 (in
Die Masseanschussleiterbahn 14 stellt den elektrischen Kontakt zwischen der Widerstandsschicht 10 und dem Gehäuse 22 her. Erfindungsgemäß ist die Masseanschussleiterbahn 14 wenigstens teilweise auf der Widerstandsschicht 10 angeordnet. Am massekontaktseitigen Ende der Schichtstruktur ist die Masseanschussleiterbahn 14 auf dem Substrat 16 angeordnet. In Richtung des ersten Endes 18 der Widerstandsschicht 10 erstreckt sich eine Erweiterung 24 der Masseanschussleiterbahn 14, die auf der Widerstandsschicht 10 angeordnet ist, d.h. die Widerstandsschicht 10 ist im Bereich der Erweiterung 24 zwischen dem Substrat 16 und der Masseanschlussleiterschicht 14 angeordnet.The
Eine von dem Substrat 16 abgewandte Oberseite 26 der Masseanschussleiterbahn 14 erstreckt sich sowohl im Bereich des massekontaktseitigen Endes der Schichtstruktur, in dem die Masseanschussleiterbahn 14 auf dem Substrat 16 aufliegt, als auch im Bereich der Erweiterung 24, in dem die Masseanschussleiter- _ bahn 14 auf der Widerstandsschicht 10 aufliegt, in einer Fläche. Diese ebene Oberseite 26 der Masseanschussleiterbahn 14 dient zum Herstellen des elektrischen Kontaktes mit dem Gehäuse 22, wobei bevorzugt eine Lötverbindung hergestellt wird. Hierzu muss eine Länge 28 der Masseanschussleiterbahn 14, d.h. eine Ausdehnung der Masseanschussleiterbahn 14 in Ausbreitungsrichtung der HF-Welle, eine gewisse Mindestlänge haben, da sich sonst keine ausreichende Lotkehle ausbilden kann. Andererseits ergeben sich umso größere negative Auswirkungen auf die Impedanzanpassung, je größer der Wert für die Länge 28 ist. Dadurch, dass die Masseanschussleiterbahn 14 am massekontaktseitigen Ende der Schichtstruktur auch im Bereich der Überlappung mit der Widerstandsschicht 10 die oberste Schicht darstellt, kann diese Länge 28 so klein gewählt werden, wie dies für die Kontaktierung mit dem Gehäuse unbedingt notwendig ist. Der negative Einfluss der Masseanschussleiterbahn 14 auf die Impedanzanpassung des HF-Abschlusswiderstandes ist dadurch minimiert.A side facing away from the
Es ist eine kurze geometrische Distanz zwischen dem zweiten Ende 20 der Widerstandschicht 10 und der Gehäusewand 22 notwendig. Gleichzeitig besteht die technologische Forderung nach einer ausreichenden Länge 28 der Lötverbindung sowie einem kostengünstigen Aufbau. Durch den erfindungsgemäßen Schichtaufbau (Masseanschussleiterbahn 14 auf Widerstandsschicht 10) wird allen Forderungen Rechnung getragen. Es ergibt sich ein einfacher, kostengünstiger Aufbau (keine Stimkontaktierung), eine ausreichende Lötfläche für eine gleichmäßige, saubere Lötverbindung (Masseverbindung zum Gehäuse 22, die eine Kehlbildung gewährleistet), und man hat trotz großer Widerstandsstrukturen einen Ansatzpunkt zur Optimierung des Reflexionsfaktors, da die Länge 28 der Masseanschlussleiterbahn 14 einen entscheidenden Einfluss auf die elektrischen Parameter besitzt. Die dargestellte kostengünstige Fertigungstechnologie für planare Strukturen, wirkt sich sehr vorteilhaft auf die HF-Eigenschaften aus.There is a short geometric distance between the
Ein Verfahren zum Herstellen einer planaren Schichtstruktur für einen HF-Abschlusswiderstand, wobei auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt ausgebildet wird, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden wird und die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden wird, ist dadurch gekennzeichnet, dass zuerst die Widerstandsschicht auf dem Substrat ausgebildet wird und danach die Masseanschussleiterbahn wenigstens teilweise auf der Widerstandsschicht ausgebildet wird.A method of fabricating a planar laminar structure for an RF termination, comprising forming on a substrate a resistive layer for converting RF energy to heat, an input line for supplying RF energy, and a bulk bus for electrically connecting to a ground contact Input conductor is electrically connected to a first end of the resistive layer and the Masseeingschussleiterbahn is electrically connected to a first end opposite the second end of the resistive layer, characterized in that first the resistive layer is formed on the substrate and thereafter the Masseeingschussleiterbahn at least partially formed on the resistive layer becomes.
Der Einfluss der Länge L 28 der Masseanschussletterbahn 14 ist in den
Claims (6)
- HF terminating resistor having a planar layer structure which, on a substrate (16), comprises a resistor layer (10) for converting HF energy to heat, an input conductor (12) for supplying HF energy and an earthing conductor (14) for the electric connection to an earthing contact (22), in which the input conductor (12) is electrically connected to a first end (18) of the resistor layer (10) and the earthing conductor (14) is electrically connected to a second end (20) of the resistor layer (10)opposite the first end (18), and on an earthing contact end of the layer structure, the earthing conductor (14) forms the topmost layer of the layer structure, characterized in that the earthing conductor (14) is at least partially arranged on the resistor layer (10).
- The HF terminating resistor according to Claim 1, characterized in that at the end of the layer structure on the earthing contact side, the earthing conductor (14) is arranged on the substrate (16) and has a widened portion (24) extending in the direction of the first end (18) of the resistor layer, which portion (24) is arranged on the resistor layer (10).
- The HF terminating resistor according to Claim 2, characterized in that an upper side (26) of the earthing conductor (14) facing away from the substrate (16) extends in an area both in the region of the end of the layer structure on the earthing contact side, in which the earthing conductor (14) lies on the substrate (16) and also in the region of the widened portion (24), in which the earthing conductor (14) lies on the resistor layer (10).
- The HF terminating resistor according to at least one of the preceding claims, characterized in that the planar layer structure is arranged in a housing of electrically conductive material, with the earthing contact (22) being the housing.
- The HF terminating resistor according to at least one of the preceding claims, characterized in that the earthing contact (22) is arranged on an end face of the planar layer structure on the earthing contact side.
- A method for the production of a planar layer structure for an HF terminating resistor, in which a resistor layer for converting HF energy to heat, an input conductor for supplying HF energy and an earthing conductor for the electric connection to an earthing contact is formed on a substrate, in which the input conductor is electrically connected to a first end of the resistor layer and the earthing conductor is electrically connected to a second end of the resistor layer opposite the first end, characterized in that firstly the resistor layer is formed on the substrate and thereafter the earthing conductor is formed at least partially on the resistor layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE202005013515U DE202005013515U1 (en) | 2005-08-26 | 2005-08-26 | High frequency termination resistor for an antenna has a planar structure providing good heat transfer |
PCT/EP2006/008089 WO2007022906A2 (en) | 2005-08-26 | 2006-08-16 | Hf terminating resistor having a planar layer structure |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1917667A2 EP1917667A2 (en) | 2008-05-07 |
EP1917667B1 true EP1917667B1 (en) | 2010-01-06 |
Family
ID=35336570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP06776894A Active EP1917667B1 (en) | 2005-08-26 | 2006-08-16 | Hf terminating resistor having a planar layer structure |
Country Status (10)
Country | Link |
---|---|
US (1) | US7834714B2 (en) |
EP (1) | EP1917667B1 (en) |
JP (1) | JP2009506525A (en) |
CN (1) | CN101253583B (en) |
AT (1) | ATE454703T1 (en) |
CA (1) | CA2617505C (en) |
DE (2) | DE202005013515U1 (en) |
HK (1) | HK1121578A1 (en) |
NO (1) | NO338161B1 (en) |
WO (1) | WO2007022906A2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202006018768U1 (en) | 2006-12-12 | 2007-02-15 | Rosenberger Hochfrequenztechnik Gmbh & Co.Kg | Energy absorbing flange high frequency moving load waveguide has edge bent at right angles towards a substrate |
CN103633427B (en) * | 2012-12-28 | 2015-02-04 | 中国科学院电子学研究所 | Broadband antenna based on planar resistor technology |
DE102018121918A1 (en) * | 2018-09-07 | 2020-03-12 | DESY Deutsches Elektronen-Synchrotron | Power amplifier for the high frequency range |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2096858B1 (en) | 1970-07-07 | 1973-11-16 | Thomson Csf | |
US4310812A (en) * | 1980-08-18 | 1982-01-12 | The United States Of America As Represented By The Secretary Of The Army | High power attenuator and termination having a plurality of cascaded tee sections |
EP0424536B1 (en) | 1989-02-02 | 1994-09-14 | Fujitsu Limited | Film resistor terminator for microstrip line |
US4965538A (en) * | 1989-02-22 | 1990-10-23 | Solitron Devices, Inc. | Microwave attenuator |
JP3060916B2 (en) * | 1995-10-24 | 2000-07-10 | 株式会社村田製作所 | High-voltage variable resistor |
US6300859B1 (en) * | 1999-08-24 | 2001-10-09 | Tyco Electronics Corporation | Circuit protection devices |
FR2852738A1 (en) * | 2003-03-19 | 2004-09-24 | Radiall Sa | MICROWAVE DEVICE FOR POWER DISSIPATION OR MITIGATION. |
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2005
- 2005-08-26 DE DE202005013515U patent/DE202005013515U1/en not_active Expired - Lifetime
-
2006
- 2006-08-16 DE DE502006005869T patent/DE502006005869D1/en active Active
- 2006-08-16 WO PCT/EP2006/008089 patent/WO2007022906A2/en active Application Filing
- 2006-08-16 JP JP2008527354A patent/JP2009506525A/en not_active Withdrawn
- 2006-08-16 CN CN2006800312897A patent/CN101253583B/en active Active
- 2006-08-16 AT AT06776894T patent/ATE454703T1/en active
- 2006-08-16 EP EP06776894A patent/EP1917667B1/en active Active
- 2006-08-16 CA CA2617505A patent/CA2617505C/en active Active
- 2006-08-16 US US12/064,764 patent/US7834714B2/en active Active
-
2008
- 2008-03-14 NO NO20081366A patent/NO338161B1/en not_active IP Right Cessation
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2009
- 2009-02-16 HK HK09101420.9A patent/HK1121578A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA2617505C (en) | 2014-10-07 |
US20090134959A1 (en) | 2009-05-28 |
DE202005013515U1 (en) | 2005-11-03 |
NO20081366L (en) | 2008-03-14 |
CN101253583B (en) | 2012-03-21 |
HK1121578A1 (en) | 2009-04-24 |
WO2007022906A3 (en) | 2007-04-19 |
US7834714B2 (en) | 2010-11-16 |
JP2009506525A (en) | 2009-02-12 |
EP1917667A2 (en) | 2008-05-07 |
ATE454703T1 (en) | 2010-01-15 |
CA2617505A1 (en) | 2007-03-01 |
CN101253583A (en) | 2008-08-27 |
DE502006005869D1 (en) | 2010-02-25 |
WO2007022906A2 (en) | 2007-03-01 |
NO338161B1 (en) | 2016-08-01 |
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