EP1934992B1 - Balanced resistor hf resistor with a planar layer structure - Google Patents
Balanced resistor hf resistor with a planar layer structure Download PDFInfo
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- EP1934992B1 EP1934992B1 EP06806115A EP06806115A EP1934992B1 EP 1934992 B1 EP1934992 B1 EP 1934992B1 EP 06806115 A EP06806115 A EP 06806115A EP 06806115 A EP06806115 A EP 06806115A EP 1934992 B1 EP1934992 B1 EP 1934992B1
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- resistive layer
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- 239000004020 conductor Substances 0.000 claims description 20
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- 230000002349 favourable effect Effects 0.000 description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
- H01P1/268—Strip line terminations
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- the present invention relates to an RF resistor, in particular an RF termination, having a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, wherein the input wiring is electrically connected to a first end of the resistance layer, the grounding wiring is electrically connected to a first end opposite the second end of the resistance layer, and the resistance layer between the first end and the second end is perpendicular to a propagation direction of the first RF energy is limited to the resistive layer and perpendicular to a normal to the planar layer structure by lateral surfaces, wherein the resistance layer for balancing the characteristic impedance to a predetermined value at least one, the cross-section
- the invention further relates to a method for balancing the characteristic impedance of an RF resistor, in particular an RF terminating resistor, with a planar layer structure which has on a substrate a resistive layer for converting
- the structure of the resistive layer is adapted to the high frequency relevant environmental conditions.
- HF terminating resistors of the o.g. It is known, at the edge of the resistive layer, to electrically deactivate a planar region by incision or to form deep cuts in the cross section of the structure.
- this results in the problem that locally high current densities occur in the region of the incisions, which lead to high temperatures in the resistance layer.
- the RF resistor can be used only narrowband or possibly must be sorted out as unusable as rejects of production.
- the invention is based on the object, an RF resistance o.g. To improve the type such that at the highest possible yield of the manufacturing process and maintaining best RF properties, using increased power dissipation, the heat is optimally distributed on the resistance layer by balancing the characteristic impedance.
- the incision is formed spaced from the lateral surfaces of the resistive layer.
- the incision is an architecturally strictured such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, causing the electronic ohmic resistance (sheet resistance ) is changed accordingly over the entire resistance layer.
- the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistance layer, wherein the legs of the U-shaped notch essential are formed longer than the base of the U-shaped incision, a current density on the resistive layer is uniformly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby distributes heat development on the resistive layer in the region of the incision over a larger area.
- the incision is arranged centrally between the lateral surfaces of the resistance layer.
- the incision is formed spaced from the side surfaces of the resistive layer.
- the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby correspondingly increasing the characteristic impedance over the entire resistive layer is changed.
- these extensions are formed symmetrically to each other.
- the incision is formed centrally between the lateral surfaces of the resistance layer.
- an RF termination resistor comprises a resistive layer 10, an input conductive line 12 and a grounding interconnect 14.
- the resistive layer 10, the input interconnect 12 and the bulk interconnect 14 are formed as respective layers on a substrate 16 forming a planar laminar structure.
- the input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18.
- the resistive layer 10 is for converting RF energy to heat
- the input trace 12 is for supplying RF energy
- the bulk launch trace 14 is for electrical connection to a ground contact (not shown).
- the resistive layer 10 is delimited between the first end 18 and the second end 20 in the direction perpendicular to a propagation direction 22 of the RF energy on the resistive layer 10 and perpendicular to a normal 24 to the planar layer structure by lateral surfaces 26.
- a U-shaped incision 28 which at least partially narrows the cross-section of the resistance layer is formed to balance the characteristic impedance to a predetermined value on the resistive layer 10, which is arranged centrally between the lateral surfaces 26 such that an open end 30 of the U-shaped Incision 28 facing the second end 20 of the resistive layer 10.
- the U-shaped incision 28 is formed with two parallel legs 32 and a leg connecting the legs 32 34, wherein the legs 32 extend parallel to the propagation direction 22 of the RF energy on the resistive layer 10 and formed substantially longer than the base 34th.
- the current density is distributed over a large cross-sectional area and locally narrow areas with high current density are avoided. This distributes the resulting heat energy to a larger area, thus avoiding locally high-temperature localized areas.
- the alignment in the longitudinal direction in the center of the structure is made at a favorable location for heat distribution and at the same time the influence to balance to the best possible fitting values is.
- the current density is uniformly distributed over the length of the resistor structure 10 in the propagation direction 22 of the RF energy in the incision 28 formed according to the invention.
- the current-carrying resistance surface is much wider.
- FIGS. 2 and 3 illustrate the advantageous effect of the incision 28 according to the invention on the characteristic impedance of the resistive layer 10. The values in the FIGS. 2 and 3 are determined from simulations.
- the 4 to 6 show experimentally determined temperature values at various points of the resistance structure 10 without adjustment ( Fig. 4 ), with adjustment by means of a first embodiment of the incision 28 (FIG. Fig. 5 ) and with adjustment by means of a second embodiment of the incision 28 (FIG. Fig. 6 ).
- this is purely U-shaped with legs 32 and base 34 is formed.
- this is like at Fig.
- the adjustment with the incision 28 according to the invention is technologically very easy to implement and causes homogeneous temperature distribution also or just for very large adjustment slots.
- the temperature is even lowered by the uniform distribution with a high level of balance. Due to the high power losses, dimensionally large resistance structures result compared to the wavelength.
- the resistance structure 10 on the substrate 16, in particular that of the resistance surface in the longitudinal direction 22, is adapted by a changing structure width.
- the possibility of making the incision 28 relatively long for the adjustment also has a positive effect on the reflection factor. Overall, the following advantages are achieved: Constant heat distribution (no hot spots), ensuring very good reflection factors over the entire bandwidth and cost reduction due to high production yield.
- the favorable properties of the new adjustment method have a direct effect on the use of a resistance substrate. According to the practical application, boundary conditions must be adhered to. This could be, for example, maximum temperature loads of solder joints or maximum permissible temperature tolerances of resistance layers. Due to its advantageous properties, the invention is particularly suitable for the production of high-resistance HF resistors (mass production, assembly line production).
- the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
- these extensions are formed symmetrically to each other.
- the incision is formed centrally between the lateral surfaces of the resistance layer.
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Abstract
Description
Die vorliegende Erfindung betrifft einen HF-Widerstand, insbesondere einen HF-Abschlusswiderstand, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweitens Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF-Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei die Widerstandsschicht zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens einen, den Querschnitt der Widerstandsschicht wenigstens teilweise verengenden Einschnitt aufweist, gemäß dem Oberbegriff des Anspruchs 1. Die Erfindung betrifft ferner ein Verfahren zum Abgleichen des Wellenwiderstandes eines HF-Widerstands, insbesondere eines HF-Abschlusswiderstands, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweiten Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF-Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens ein, den Querschnitt der Widerstandsschicht wenigstens teilweise verengender Einschnitt auf der Widerstandsschicht ausgebildet wird, gemäß dem Oberbegriff des Anspruchs 8.The present invention relates to an RF resistor, in particular an RF termination, having a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, wherein the input wiring is electrically connected to a first end of the resistance layer, the grounding wiring is electrically connected to a first end opposite the second end of the resistance layer, and the resistance layer between the first end and the second end is perpendicular to a propagation direction of the first RF energy is limited to the resistive layer and perpendicular to a normal to the planar layer structure by lateral surfaces, wherein the resistance layer for balancing the characteristic impedance to a predetermined value at least one, the cross-section The invention further relates to a method for balancing the characteristic impedance of an RF resistor, in particular an RF terminating resistor, with a planar layer structure which has on a substrate a resistive layer for converting the resistive layer to at least partially narrowing RF energy into heat, an input trace for supplying RF energy and a grounding conductor for electrically connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistance layer, the grounding conductor is electrically connected to a second end of the resistance layer opposite the first end, and the resistance layer is between the first end and the second end in the direction perpendicular to a propagation direction of the RF energy on the resistance layer and perpendicular to a normal to the planar layer structure is limited by lateral surfaces, wherein for balancing the characteristic impedance to a predetermined value at least one, the cross-section of the resistive layer at least partially narrowing incision on the resistance layer is formed, according to the preamble of claim 8.
Ein HF-Widerstand gemäß dem Oberbegriff des Anspruchs 1 und ein Verfahren gemäß dem Oberbegriff des Anspruchs 8 sind aus der Offenlegungsschrift
Um den HF-Widerstand breitbandig zu gestalten, wird die Struktur der Widerstandsschicht an die hochfrequenzrelevanten Umgebungsbedingungen angepasst. Zum Abgleich von HF-Abschlusswiderständen der o.g. Art ist es bekannt, am Rand der Widerstandsschicht durch Einschnitt einen flächenhaften Bereich elektrisch zu deaktivieren oder tiefe Einschnitte in den Querschnitt der Struktur auszubilden. Hierbei ergibt sich jedoch das Problem, dass im Bereich der Einschnitte lokal hohe Stromdichten entstehen, die zu hohen Temperaturen in der Widerstandsschicht führen. Dies hat zu Folge, dass der HF-Widerstand nur noch schmalbandiger eingesetzt werden kann oder ggf. als unbrauchbar als Ausschuss der Produktion aussortiert werden muss.To make the RF resistance broadband, the structure of the resistive layer is adapted to the high frequency relevant environmental conditions. For the adjustment of HF terminating resistors of the o.g. It is known, at the edge of the resistive layer, to electrically deactivate a planar region by incision or to form deep cuts in the cross section of the structure. However, this results in the problem that locally high current densities occur in the region of the incisions, which lead to high temperatures in the resistance layer. This has the consequence that the RF resistor can be used only narrowband or possibly must be sorted out as unusable as rejects of production.
Der Erfindung liegt die Aufgabe zugrunde, einen HF-Widerstand der o.g. Art derart zu verbessern, dass bei höchstmöglicher Ausbeute des Fertigungsprozesses und Beibehaltung bester HF-Eigenschaften, unter Anwendung erhöhter Verlustleistung, die Wärme auf der Widerstandsschicht durch den Abgleich des Wellenwiderstandes optimal verteilt wird.The invention is based on the object, an RF resistance o.g. To improve the type such that at the highest possible yield of the manufacturing process and maintaining best RF properties, using increased power dissipation, the heat is optimally distributed on the resistance layer by balancing the characteristic impedance.
Diese Aufgabe wird erfindungsgemäß durch einen HF-Widerstand der o.g. Art mit den in Anspruch 1 gekennzeichneten Merkmalen sowie durch ein Verfahren der o.g. Art mit den in Anspruch 8 gekennzeichneten Merkmalen gelöst. Vorteilhafte Ausgestaltungen der Erfindung sind in den weiteren Ansprüchen beschrieben.This object is achieved by an RF resistor of the type mentioned above with the features characterized in claim 1 and by a method of the above Art solved with the features characterized in claim 8. Advantageous embodiments of the invention are described in the further claims.
Bei einem HF-Widerstand der o.g. Art ist es vorgesehen, dass der Einschnitt von den seitlichen Flächen der Widerstandsschicht beabstandet ausgebildet ist.For an HF resistor the o.g. Art is provided that the incision is formed spaced from the lateral surfaces of the resistive layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise ist der Einschnitt derart ausgbildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF-Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der elektronische, ohmsche Widerstand (Flächenwiderstand) über die gesamte Widerstandsschicht entsprechend verändert ist.Conveniently, the incision is ausgebildet such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. As a result, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, causing the electronic ohmic resistance (sheet resistance ) is changed accordingly over the entire resistance layer.
Dadurch, dass der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet ist, wobei die Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet sind als die Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung der HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt.Characterized in that the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistance layer, wherein the legs of the U-shaped notch essential are formed longer than the base of the U-shaped incision, a current density on the resistive layer is uniformly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby distributes heat development on the resistive layer in the region of the incision over a larger area.
Zum besonders feinen Einstellen des Flächenwiderstandes ist an freien, der Basis abgewandten Enden der Schenkel des U-förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise sind diese Verlängerungen symmetrisch zueinander ausgebildet.For particularly fine adjusting the surface resistance is at free, the base remote from the ends of the legs of the U-shaped incision one each Extension of the incision formed. Conveniently, these extensions are symmetrical to each other.
In einer bevorzugten Ausführungsform ist der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht angeordnet.In a preferred embodiment, the incision is arranged centrally between the lateral surfaces of the resistance layer.
Bei einem Verfahren der o.g. Art ist es vorgesehen, dass der Einschnitt beabstandet von den seitlichen Flächen der Widerstandsschicht ausgebildet wird.In a method of o.g. Art is provided that the incision is formed spaced from the side surfaces of the resistive layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise wird bei einem Verfahren der vorgenannten Art der Einschnitt derart ausgebildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF-Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der Wellenwiderstand über die gesamte Widerstandsschicht entsprechend verändert ist.Appropriately, in a method of the aforementioned type, the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. As a result, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby correspondingly increasing the characteristic impedance over the entire resistive layer is changed.
Dadurch, dass bei einem Verfahren der vorgenannten Art der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet wird, wobei die Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet werden als die Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung der HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt.Characterized in that in a method of the aforementioned type of incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistive layer, wherein the legs the U-shaped incision are formed much longer than the base of the U-shaped incision, a current density on the resistive layer is evenly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby heat development on the resistive layer in the region of the incision on a distributed over a larger area.
Zum besonders feinen Einstellen des Wellenwiderstandes wird bei einem Verfahren der vorgenannten Art an freien, der Basis abgewandten Enden der Schenkel des U-förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise werden diese Verlängerungen symmetrisch zueinander ausgebildet.For particularly fine adjustment of the characteristic impedance is formed in a method of the aforementioned type of free, the base remote from the ends of the legs of the U-shaped incision respectively an extension of the incision. Conveniently, these extensions are formed symmetrically to each other.
In einer bevorzugten Ausführungsform des vorgenannten Verfahrens wird der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht ausgebildet.In a preferred embodiment of the aforementioned method, the incision is formed centrally between the lateral surfaces of the resistance layer.
Die Erfindung wird im Folgenden anhand der Zeichnung näher erläutert. Diese zeigt in:
- Fig. 1
- eine bevorzugte Ausführungsform eines erfindungsgemäßen HF-Widerstandes in Aufsicht,
- Fig. 2
- eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für den HF-Widerstand gemäß
Fig. 1 ohne Abgleich mittels eines Einschnittes, - Fig. 3
- eine graphische Darstellung der Anpassung des Wellenwiderstandes über die Frequenz für den HF-Widerstand gemäß
Fig. 1 mit Abgleich mittels des erfindungsgemäßen Einschnittes, - Fig. 4
- eine alternative Ausführungsform eines HF-Widerstandes ohne Abgleich mittels des erfindungsgemäßen Einschnittes in Aufsicht,
- Fig. 5
- den HF-Widerstand gemäß
Fig. 4 mit Abgleich mittels des erfindungsgemäßen Einschnittes gemäß einer ersten bevorzugten Ausführungsform in Aufsicht und - Fig. 6
- den HF-Widerstand gemäß
Fig. 4 mit Abgleich mittels des erfindungsgemäßen Einschnittes gemäß einer zweiten bevorzugten Ausführungsform in Aufsicht.
- Fig. 1
- a preferred embodiment of an RF resistor according to the invention in supervision,
- Fig. 2
- a graph of the adjustment of the characteristic impedance over the frequency for the RF resistance according to
Fig. 1 without adjustment by means of an incision, - Fig. 3
- a graph of the adjustment of the characteristic impedance over the frequency for the RF resistance according to
Fig. 1 with adjustment by means of the incision according to the invention, - Fig. 4
- an alternative embodiment of an RF resistor without adjustment by means of the incision according to the invention in supervision,
- Fig. 5
- the RF resistance according to
Fig. 4 with adjustment by means of the incision according to the invention according to a first preferred embodiment in plan view and - Fig. 6
- the RF resistance according to
Fig. 4 with adjustment by means of the incision according to the invention according to a second preferred embodiment in plan view.
Die aus
Die Widerstandsschicht 10 ist zwischen dem ersten Ende 18 und dem zweiten Ende 20 in Richtung senkrecht zu einer Ausbreitungsrichtung 22 der HF-Energie auf der Widerstandsschicht 10 sowie senkrecht zu einer Normalen 24 zur planaren Schichtstruktur durch seitliche Flächen 26 begrenzt. Erfindungsgemäß ist zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert auf der Widerstandsschicht 10 ein den Querschnitt der Widerstandsschicht wenigstens teilweise verengender, U-förmiger Einschnitt 28 ausgebildet, der mittig zwischen den seitlichen Flächen 26 derart angeordnet ist, dass ein offenes Ende 30 des U-förmigen Einschnitts 28 dem zweiten Ende 20 der Widerstandsschicht 10 zugewandt ist. Der U-förmige Einschnitt 28 ist mit zwei parallelen Schenkeln 32 und eine die Schenkel 32 miteinander verbindenden Basis 34 ausgebildet, wobei sich die Schenkel 32 parallel zur Ausbreitungsrichtung 22 der HF-Energie auf der Widerstandsschicht 10 erstrecken und wesentlich länger ausgebildet sind als die Basis 34. Hierdurch ergibt sich eine relativ große, elektrisch deaktivierter Bereich zwischen den Schenkeln 32, wobei gleichzeitig der elektrisch wirksame Querschnitt im Bereich des Einschnittes 28 relativ groß bleibt. Dadurch verteilt sich die Stromdichte über eine großen Querschnittsbereich und lokal eng begrenzte Stellen mit hoher Stromdicht sind vermieden. Dies verteilt die sich ergebende Wärmeenergie auf einen größeren Bereich, so dass lokal eng begrenzte Stellen mit hoher Temperatur vermieden sind.The
Um den erfindungsgemäßen HF-Widerstand breitbandig zu gestalten, ist also die Struktur der Widerstandsschicht an die hochfrequenzrelevanten Umgebungsbedingungen angepasst, wobei erfindungsgemäß der Abgleich in Längsrichtung in der Strukturmitte an einer für die Wärmeverteilung günstigen Stelle vorgenommen wird und gleichzeitig der Einfluss zum Abgleich auf bestmögliche Anpasswerte gewahrt ist. Wo bei der herkömmlichen Methode des Abgleichs des Wellenwiderstands heiße Stellen durch eine erhöhte Stromdichte auftreten, wird bei dem erfindungsgemäß ausgebildeten Einschnitt 28 die Stromdichte gleichmäßig über die Länge der Widerstandsstruktur 10 in Ausbreitungsrichtung 22 der HF-Energie verteilt. Die stromdurchflossene Widerstandsfläche ist wesentlich breiter.In order to design the high-frequency resistance of the invention broadband, so the structure of the resistive layer is adapted to the high-frequency environmental conditions, according to the invention, the alignment in the longitudinal direction in the center of the structure is made at a favorable location for heat distribution and at the same time the influence to balance to the best possible fitting values is. Where in the conventional method of balancing the characteristic impedance hot spots occur due to an increased current density, the current density is uniformly distributed over the length of the
Die
Man sieht deutlich die Tendenz der Temperaturverteilung auf der Widerstandsschicht in Abhängigkeit des gewählten Abgleichschlitzes. Der Abgleich mit dem erfindungsgemäßen Einschnitt 28 ist technologisch sehr einfach zu realisieren und bewirkt homogene Temperaturverteilung auch bzw. gerade bei sehr großen Abgleichschlitzen. Im Gegensatz zu extremen Einschnitten (I-Schnitt), wie im Stand der Technik üblich, wird mit dem erfindungsgemäßen Einschnitt 28 die Temperatur bei großem Abgleich durch die gleichmäßige Verteilung sogar gesenkt. Aufgrund der hohen Verlustleistungen ergeben sich im Vergleich zur Wellenlänge maßlich große Widerstandsstrukturen. Um dennoch sehr, gute Anpassungen der Load zu erzielen, wird die Widerstandsstruktur 10 auf dem Substrat 16, insbesondere die der Widerstandsfläche in Längsrichtung 22, durch eine sich ändernde Strukturbreite, angepasst. Die Möglichkeit den Einschnitt 28 für den Abgleich relativ lang zu gestalten, wirkt sich ebenfalls positiv auf den Reflexionsfaktor aus. Insgesamt werden folgende Vorteile erzielt: Konstante Wärmeverteilung (keine hot Spot's), Gewährleistung sehr guter Reflexionsfaktoren über gesamte Bandbreite und Kostensenkung durch hohe Ausbeute der Fertigung.One can clearly see the tendency of the temperature distribution on the resistive layer as a function of the selected tuning slot. The adjustment with the
Die günstigen Eigenschaften der neuen Abgleichmethode wirken sich direkt auf den Einsatz eines Widerstandssubstrates aus. Entsprechend des praktischen Einsatzes müssen Randbedingungen eingehalten werden. Dies könnten z.B. maximale Temperaturbelastungen von Lötstellen oder maximal zulässige Temperaturverträglichkeiten von Widerstandsschichten sein. Die Erfindung ist aufgrund der vorteilhaften Eigenschaften besonders für die Fertigung von HF-Widerständen in großen Stückzahlen (Massenfertigung, Fließbandfertigung) geeignet.The favorable properties of the new adjustment method have a direct effect on the use of a resistance substrate. According to the practical application, boundary conditions must be adhered to. This could be, for example, maximum temperature loads of solder joints or maximum permissible temperature tolerances of resistance layers. Due to its advantageous properties, the invention is particularly suitable for the production of high-resistance HF resistors (mass production, assembly line production).
Ein Verfahren zum Abgleichen des Wellenwiderstandes eines HF-Widerstands, insbesondere eines HF-Abschlusswiderstands, mit einer planaren Schichtstruktur, die auf einem Substrat eine Widerstandsschicht zum Umwandeln von HF-Energie in Wärme, eine Eingangsleiterbahn zum Zuführen von HF-Energie und eine Masseanschussleiterbahn zum elektrischen Verbinden mit einem Massekontakt aufweist, wobei die Eingangsleiterbahn mit einem ersten Ende der Widerstandsschicht elektrisch verbunden ist, die Masseanschussleiterbahn mit einem dem ersten Ende gegenüberliegenden zweiten Ende der Widerstandsschicht elektrisch verbunden ist und die Widerstandsschicht zwischen dem ersten Ende und dem zweiten Ende in Richtung senkrecht zu einer Ausbreitungsrichtung der HF-Energie auf der Widerstandsschicht sowie senkrecht zu einer Normalen zur planaren Schichtstruktur durch seitliche Flächen begrenzt ist, wobei zum Abgleich des Wellenwiderstandes auf einen vorbestimmten Wert wenigstens ein, den Querschnitt der Widerstandsschicht wenigstens teilweise verengender Einschnitt auf der Widerstandsschicht ausgebildet wird, ist dadurch gekennzeichnet, dass der Einschnitt beabstandet von den seitlichen Flächen der Widerstandsschicht ausgebildet wird.A method for balancing the characteristic impedance of an RF resistor, in particular an RF termination resistor, with a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input conductor for supplying RF energy and a grounding conductor to the electrical Connecting to a ground contact, wherein the input conductor is electrically connected to a first end of the resistive layer, the bulk starting conductor is electrically connected to a first end opposite the second end of the resistive layer and the resistive layer between the first end and the second end in the direction perpendicular to a Spreading direction of the RF energy on the resistive layer and perpendicular to a normal to the planar layer structure is limited by lateral surfaces, wherein for balancing the characteristic impedance to a predetermined value at least one, the cross section of the Wi At least partially narrowing incision on the resistance layer is formed, for example, in that the incision is formed at a distance from the lateral areas of the resistance layer.
Dies hat den Vorteil, dass auch im Bereich des Einschnittes eine günstige Wärmeverteilung erzielt wird, die heiße Stellen durch erhöhte Stromdichte vermeidet.This has the advantage that even in the region of the incision, a favorable heat distribution is achieved, which avoids hot spots due to increased current density.
Zweckmäßigerweise wird bei einem Verfahren der vorgenannten Art der Einschnitt derart ausgebildet, dass dieser den Querschnitt der Widerstandsschicht in Richtung der Normalen zur planaren Schichtstruktur vollständig unterbricht. Dadurch ist ein Bereich der Widerstandsschicht in Richtung der Ausbreitungsrichtung der HF-Energie hinter dem Einschnitt vollständig deaktiviert und trägt nicht mehr zu Stromleitung von der Eingangsleiterbahn am ersten Ende der Widerstandsschicht zur Masseanschlussleiterbahn am zweiten Ende der Widerstandsschicht bei, wodurch der Flächenwiderstand über die gesamte Widerstandsschicht entsprechend verändert ist.Appropriately, in a method of the aforementioned type, the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure. Thereby, a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby increasing the sheet resistance over the entire resistive layer is changed.
Dadurch, dass bei einem Verfahren der vorgenannten Art der Einschnitt in der Ebene der Widerstandsschicht U-förmig mit zwei Schenkeln und einer die Schenkel verbindenden Basis und mit einer offenen Seite des U-förmigen Einschnittes dem zweiten Ende der Widerstandsschicht zugewandt ausgebildet wird, wobei die Schenkel des U-förmigen Einschnittes wesentlich länger ausgebildet werden als die Basis des U-förmigen Einschnittes, wird eine Stromdichte auf der Widerstandsschicht gleichmäßig über eine Länge der Widerstandsschicht in Ausbreitungsrichtung der HF-Energie verteilt und dadurch eine Wärmeentwicklung auf der Widerstandsschicht im Bereich des Einschnittes auf eine größere Fläche verteilt.Characterized in that in a method of the aforementioned type of incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistive layer, wherein the legs the U-shaped incision are formed much longer than the base of the U-shaped incision, a current density on the resistive layer is evenly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby heat development on the resistive layer in the region of the incision on a distributed over a larger area.
Zum besonders feinen Einstellen des Wellenwiderstandes wird bei einem Verfahren der vorgenannten Art an freien, der Basis abgewandten Enden der Schenkel des U-förmigen Einschnittes jeweils eine Verlängerung des Einschnittes ausgebildet. Zweckmäßigerweise werden diese Verlängerungen symmetrisch zueinander ausgebildet.For particularly fine adjustment of the characteristic impedance is formed in a method of the aforementioned type of free, the base remote from the ends of the legs of the U-shaped incision respectively an extension of the incision. Conveniently, these extensions are formed symmetrically to each other.
In einer bevorzugten Ausführungsform des vorgenannten Verfahrens wird der Einschnitt mittig zwischen den seitlichen Flächen der Widerstandsschicht ausgebildet.In a preferred embodiment of the aforementioned method, the incision is formed centrally between the lateral surfaces of the resistance layer.
Claims (14)
- RF resistor, and in particular an RF terminating resistor, having a planar layer structure which has, on a substrate (16), a resistive layer (10) for converting RF energy into heat, an input conductor track (12) for the infeed of RF energy, and an earthing conductor track (14) for making an electrical connection to an earth contact, the input conductor track (12) being electrically connected to a first end (18) of the resistive layer (10), the earthing conductor track (14) being electrically connected to a second end (20) of the resistive layer which is opposite from the first end (18), and the resistive layer (10) being bounded, between the first end (18) and the second end (20), by lateral faces (26) in a direction perpendicular to a direction of propagation (22) of the RF energy in the resistive layer (10) and perpendicular to a normal (24) to the planar layer structure, the resistive layer (10) having at least one incision, which at least partly constricts the cross-section of the resistive layer (10), to match the characteristic impedance to a predetermined value, wherein the incision (28) is formed to be spaced away from the lateral faces (26) of the resistive layer (10), characterised in that the incision (28) is formed to be U-shaped in the plane of the resistive layer (10), with the U having two sides (32) and a bottom (34) which connects the sides (32).
- RF resistor according to claim 1, characterised in that the incision (28) is so formed that it completely interrupts the cross-section of the resistive layer (10) in the direction of the normal (24) to the planar layer structure.
- RF resistor according to at least one of the foregoing claims, characterised in that the sides (32) of the U-shaped incision (28) are formed to be substantially longer than the bottom (34) of the U-shaped incision (28).
- RF resistor according to at least one of the foregoing claims, characterised in that an open end (30) of the U-shaped incision (28) is adjacent the second end (20) of the resistive layer (10).
- RF resistor according to at least one of the foregoing claims, characterised in that an extension (36) of the U-shaped incision (28) is formed at each of those free ends of the sides (32) of the incision (28) which are remote from the bottom (34).
- RF resistor according to claim 5, characterised in that the extensions (36) are formed to be symmetrical to one another.
- RF resistor according to at least one of the foregoing claims, characterised in that the incision (28) is arranged centrally between the lateral faces (26) of the resistive layer (10).
- Method of matching the characteristic impedance of an RF resistor, and in particular an RF terminating resistor, having a planar layer structure which has, on a substrate, a resistive layer for converting RF energy into heat, an input conductor track for the infeed of RF energy, and an earthing conductor track for making an electrical connection to an earth contact, the input conductor track being electrically connected to a first end of the resistive layer, the earthing conductor track being electrically connected to a second end of the resistive layer which is opposite from the first end, and the resistive layer being bounded, between the first end and the second end, by lateral faces in a direction perpendicular to a direction of propagation of the RF energy in the resistive layer and perpendicular to a normal to the planar layer structure, there being formed in the resistive layer, to match the characteristic impedance to a predetermined value, at least one incision which at least partly constricts the cross-section of the resistive layer, wherein the incision is formed to be spaced away from the lateral faces of the resistive layer, characterised in that the incision is formed to be U-shaped in the plane of the resistive layer with the U having two sides and a bottom which connects the sides.
- Method according to claim 8, characterised in that the incision is so formed that it completely interrupts the cross-section of the resistive layer in the direction of the normal to the planar layer structure.
- Method according to claim 9, characterised in that the U-shaped incision is formed to have an open end of the U-shaped incision adjacent the second end of the resistive layer.
- Method according to claim 9 or 10, characterised in that the sides of the U-shaped incision are formed to be substantially longer than the bottom of the U-shaped incision.
- Method according to at least one of claims 8 to 11, characterised in that there is formed an extension of the incision at each of those free ends of the sides of the U-shaped incision which are remote from the bottom.
- Method according to claim 12, characterised in that these extensions are formed to be symmetrical to one another.
- Method according to at least one of claims 8 to 11, characterised in that the incision is formed centrally between the lateral faces of the resistive layer.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE202005015927U DE202005015927U1 (en) | 2005-10-11 | 2005-10-11 | Balanced high frequency resistor especially a termination resistor with a planar layer structure and having a notch spaced from the side surfaces of the resistive layer |
PCT/EP2006/009736 WO2007042243A1 (en) | 2005-10-11 | 2006-10-09 | Balanced resistor hf resistor with a planar layer structure |
Publications (2)
Publication Number | Publication Date |
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EP1934992A1 EP1934992A1 (en) | 2008-06-25 |
EP1934992B1 true EP1934992B1 (en) | 2009-01-28 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP06806115A Active EP1934992B1 (en) | 2005-10-11 | 2006-10-09 | Balanced resistor hf resistor with a planar layer structure |
Country Status (10)
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US (1) | US8063731B2 (en) |
EP (1) | EP1934992B1 (en) |
JP (1) | JP2009512293A (en) |
CN (1) | CN101288134B (en) |
AT (1) | ATE422096T1 (en) |
CA (1) | CA2624472C (en) |
DE (2) | DE202005015927U1 (en) |
HK (1) | HK1124954A1 (en) |
NO (1) | NO337881B1 (en) |
WO (1) | WO2007042243A1 (en) |
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JP5419088B2 (en) * | 2010-01-07 | 2014-02-19 | アルパイン株式会社 | Substrate attenuation circuit |
CN101923928B (en) * | 2010-03-25 | 2012-05-23 | 四平市吉华高新技术有限公司 | High-frequency patch resistor and manufacturing method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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DE1945839B2 (en) * | 1969-09-10 | 1978-03-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Termination resistor covering wide frequency range - has absorption layer at end of strip conductor linked to earthing conductor |
DE2634812C2 (en) * | 1976-08-03 | 1983-05-05 | Spinner-GmbH Elektrotechnische Fabrik, 8000 München | HF power terminating resistor |
US4148005A (en) * | 1977-10-14 | 1979-04-03 | The United States Of America As Represented By The Secretary Of The Army | Thermometric transducer device |
JPH01304705A (en) * | 1988-06-01 | 1989-12-08 | Murata Mfg Co Ltd | Trimming of film resistor |
DE3843600C1 (en) * | 1988-12-23 | 1990-03-22 | Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De | High-frequency power terminating impedance |
US6007755A (en) * | 1995-02-21 | 1999-12-28 | Murata Manufacturing Co., Ltd. | Resistor trimming method |
US6148502A (en) * | 1997-10-02 | 2000-11-21 | Vishay Sprague, Inc. | Surface mount resistor and a method of making the same |
FI106414B (en) * | 1999-02-02 | 2001-01-31 | Nokia Networks Oy | Broadband impedance adapter |
-
2005
- 2005-10-11 DE DE202005015927U patent/DE202005015927U1/en not_active Expired - Lifetime
-
2006
- 2006-10-09 CA CA2624472A patent/CA2624472C/en active Active
- 2006-10-09 CN CN2006800379577A patent/CN101288134B/en active Active
- 2006-10-09 DE DE502006002761T patent/DE502006002761D1/en active Active
- 2006-10-09 EP EP06806115A patent/EP1934992B1/en active Active
- 2006-10-09 JP JP2008534913A patent/JP2009512293A/en not_active Withdrawn
- 2006-10-09 WO PCT/EP2006/009736 patent/WO2007042243A1/en active Application Filing
- 2006-10-09 AT AT06806115T patent/ATE422096T1/en not_active IP Right Cessation
- 2006-10-09 US US12/089,146 patent/US8063731B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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JP2009512293A (en) | 2009-03-19 |
ATE422096T1 (en) | 2009-02-15 |
NO337881B1 (en) | 2016-07-04 |
HK1124954A1 (en) | 2009-07-24 |
WO2007042243A1 (en) | 2007-04-19 |
DE202005015927U1 (en) | 2005-12-29 |
CA2624472A1 (en) | 2007-04-19 |
US8063731B2 (en) | 2011-11-22 |
CN101288134B (en) | 2011-02-09 |
CA2624472C (en) | 2013-06-04 |
NO20082123L (en) | 2008-05-06 |
EP1934992A1 (en) | 2008-06-25 |
DE502006002761D1 (en) | 2009-03-19 |
US20090206981A1 (en) | 2009-08-20 |
CN101288134A (en) | 2008-10-15 |
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