EP1662554A4 - Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren - Google Patents

Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren

Info

Publication number
EP1662554A4
EP1662554A4 EP04772275A EP04772275A EP1662554A4 EP 1662554 A4 EP1662554 A4 EP 1662554A4 EP 04772275 A EP04772275 A EP 04772275A EP 04772275 A EP04772275 A EP 04772275A EP 1662554 A4 EP1662554 A4 EP 1662554A4
Authority
EP
European Patent Office
Prior art keywords
liquid
exposure
substrate
exposure apparatus
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04772275A
Other languages
English (en)
French (fr)
Japanese (ja)
Other versions
EP1662554A1 (de
Inventor
Hiroyuki Nagasaka
Yuuki Ishii
Susumu Makinouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34220704&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP1662554(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP1662554A1 publication Critical patent/EP1662554A1/de
Publication of EP1662554A4 publication Critical patent/EP1662554A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optics & Photonics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
EP04772275A 2003-08-21 2004-08-20 Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren Withdrawn EP1662554A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003297507 2003-08-21
JP2004038411 2004-02-16
PCT/JP2004/012319 WO2005020299A1 (ja) 2003-08-21 2004-08-20 露光装置、露光方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
EP1662554A1 EP1662554A1 (de) 2006-05-31
EP1662554A4 true EP1662554A4 (de) 2008-01-23

Family

ID=34220704

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04772275A Withdrawn EP1662554A4 (de) 2003-08-21 2004-08-20 Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren

Country Status (5)

Country Link
US (4) US8064037B2 (de)
EP (1) EP1662554A4 (de)
JP (10) JP4524670B2 (de)
KR (11) KR101288632B1 (de)
WO (1) WO2005020299A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101288632B1 (ko) * 2003-08-21 2013-07-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR20170070264A (ko) * 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
KR101664642B1 (ko) 2003-09-29 2016-10-11 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
JP4691927B2 (ja) * 2004-08-13 2011-06-01 株式会社ニコン 顕微鏡観察装置
JP4548341B2 (ja) * 2004-02-10 2010-09-22 株式会社ニコン 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
JP4973754B2 (ja) * 2004-03-04 2012-07-11 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005111722A2 (en) 2004-05-04 2005-11-24 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP3870207B2 (ja) * 2004-08-05 2007-01-17 キヤノン株式会社 液浸露光装置及びデバイス製造方法
SG155929A1 (en) 2004-09-17 2009-10-29 Nikon Corp Exposure apparatus, exposure method, and method for manufacturing device
US20090226846A1 (en) * 2005-03-30 2009-09-10 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
EP1881520A4 (de) * 2005-05-12 2010-06-02 Nikon Corp Optisches projektionssystem, belichtungsvorrichtung und belichtungsverfahren
US7170583B2 (en) * 2005-06-29 2007-01-30 Asml Netherlands B.V. Lithographic apparatus immersion damage control
US8054445B2 (en) * 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG170060A1 (en) * 2005-09-09 2011-04-29 Nikon Corp Exposure apparatus, exposure method, and device production method
US7929109B2 (en) 2005-10-20 2011-04-19 Nikon Corporation Apparatus and method for recovering liquid droplets in immersion lithography
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007194484A (ja) 2006-01-20 2007-08-02 Toshiba Corp 液浸露光方法
US9477158B2 (en) * 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101529845B1 (ko) * 2006-08-31 2015-06-17 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
SG143137A1 (en) 2006-11-13 2008-06-27 Asml Netherlands Bv Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US7692765B2 (en) 2007-02-21 2010-04-06 Asml Netherlands B.V. Lithographic apparatus and method of removing liquid
DE102007025340B4 (de) 2007-05-31 2019-12-05 Globalfoundries Inc. Immersionslithograpieprozess unter Anwendung einer variablen Abtastgeschwindigkeit und Lithographiesystem
NL1035757A1 (nl) * 2007-08-02 2009-02-03 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
EP2221669A3 (de) * 2009-02-19 2011-02-09 ASML Netherlands B.V. Lithografische Vorrichtung, Verfahren zum Steuern der Vorrichtung und Verfahren zur Herstellung eines Artikels
NL2004305A (en) * 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
EP2264529A3 (de) * 2009-06-16 2011-02-09 ASML Netherlands B.V. Lithografische Vorrichtung, Verfahren zum Steuern der Vorrichtung und Verfahren zur Herstellung eines Artikels unter Anwendung einer lithografischen Vorrichtung
EP2381310B1 (de) 2010-04-22 2015-05-06 ASML Netherlands BV Flüssigkeitshandhabungsstruktur und lithographischer Apparat
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
CN108292101B (zh) 2015-10-01 2020-07-21 Asml荷兰有限公司 光刻设备及器件制造方法
JP7215819B2 (ja) 2017-01-11 2023-01-31 ダイキン工業株式会社 空気調和装置及び室内ユニット
JP7225030B2 (ja) * 2019-05-31 2023-02-20 キヤノン株式会社 インプリント方法、及び、物品の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
EP0605103A1 (de) * 1992-11-27 1994-07-06 Canon Kabushiki Kaisha Projektionsvorrichtung zur Tauchbelichtung
EP1653501A1 (de) * 2003-07-28 2006-05-03 Nikon Corporation Belichtungsvorrichtung, bauelemente-herstellungsverfahren und steuerverfahren für eine belichtungsvorrichtung

Family Cites Families (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JP3218478B2 (ja) 1992-09-04 2001-10-15 株式会社ニコン 投影露光装置及び方法
US5424552A (en) 1991-07-09 1995-06-13 Nikon Corporation Projection exposing apparatus
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH0684157A (ja) 1992-09-04 1994-03-25 Alps Electric Co Ltd 磁気ヘッド
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US6333776B1 (en) 1994-03-29 2001-12-25 Nikon Corporation Projection exposure apparatus
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3551570B2 (ja) * 1995-08-09 2004-08-11 株式会社ニコン 走査型露光装置及び露光方法
JPH09167735A (ja) * 1995-12-15 1997-06-24 Canon Inc 投影露光装置及びそれを用いた半導体デバイスの製造方法
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
KR20030096435A (ko) 1996-11-28 2003-12-31 가부시키가이샤 니콘 노광장치 및 노광방법
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH10209039A (ja) * 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
KR100521704B1 (ko) * 1997-09-19 2005-10-14 가부시키가이샤 니콘 스테이지장치, 주사형 노광장치 및 방법, 그리고 이것으로제조된 디바이스
JP3097620B2 (ja) * 1997-10-09 2000-10-10 日本電気株式会社 走査型縮小投影露光装置
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
EP1030351A1 (de) * 1997-11-12 2000-08-23 Nikon Corporation Belichtungsapparat, apparat zur herstellung von bauelementen, und verfahren zur herstellung von belichtungsapparaten
JPH11176727A (ja) * 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
JP4370608B2 (ja) * 1998-03-09 2009-11-25 株式会社ニコン 走査露光方法、走査型露光装置及びその製造方法、並びにデバイス製造方法
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
AU5447499A (en) * 1998-09-03 2000-03-27 Nikon Corporation Exposure apparatus and exposure method, and device and method for producing the same
EP1143491A4 (de) * 1998-11-19 2003-11-26 Nikon Corp Optisches bauelement, belichtungssystem, laserstrahlquelle, gaszuführungsverfahren, belichtungsverfahren und bauelementherstellungsverfahren
JP2001144004A (ja) * 1999-11-16 2001-05-25 Nikon Corp 露光方法、露光装置、及びデバイス製造方法
DE10010131A1 (de) * 2000-03-03 2001-09-06 Zeiss Carl Mikrolithographie - Projektionsbelichtung mit tangentialer Polarisartion
US6801301B2 (en) * 2001-10-12 2004-10-05 Canon Kabushiki Kaisha Exposure apparatus
AU2003256081A1 (en) 2002-08-23 2004-03-11 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP3953460B2 (ja) 2002-11-12 2007-08-08 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ投影装置
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1586386A4 (de) * 2002-12-03 2010-04-21 Nikon Corp Verfahren und vorrichtung zur entfernung von verunreinigungen sowie belichtungsverfahren und -vorrichtung
CN1723541B (zh) 2002-12-10 2010-06-02 株式会社尼康 曝光装置和器件制造方法
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
KR20050085235A (ko) 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4529433B2 (ja) 2002-12-10 2010-08-25 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4645027B2 (ja) 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
AU2003276569A1 (en) * 2002-12-13 2004-07-09 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
KR101096478B1 (ko) * 2003-01-23 2011-12-20 가부시키가이샤 니콘 노광 장치
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
JP2005277363A (ja) 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
TWI518742B (zh) 2003-05-23 2016-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI607292B (zh) 2003-06-13 2017-12-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
JP3862678B2 (ja) 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2843472B1 (de) 2003-07-08 2016-12-07 Nikon Corporation Waferplatte für die Immersionslithografie
KR101288632B1 (ko) * 2003-08-21 2013-07-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7063565B2 (en) * 2004-05-14 2006-06-20 Thomas & Betts International, Inc. Coaxial cable connector
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD221563A1 (de) * 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
EP0605103A1 (de) * 1992-11-27 1994-07-06 Canon Kabushiki Kaisha Projektionsvorrichtung zur Tauchbelichtung
EP1653501A1 (de) * 2003-07-28 2006-05-03 Nikon Corporation Belichtungsvorrichtung, bauelemente-herstellungsverfahren und steuerverfahren für eine belichtungsvorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2005020299A1 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9429495B2 (en) 2004-06-04 2016-08-30 Carl Zeiss Smt Gmbh System for measuring the image quality of an optical imaging system

Also Published As

Publication number Publication date
KR20120003503A (ko) 2012-01-10
US20060139593A1 (en) 2006-06-29
KR20110137390A (ko) 2011-12-22
KR101288632B1 (ko) 2013-07-22
KR101381563B1 (ko) 2014-04-04
WO2005020299A1 (ja) 2005-03-03
US20110211186A1 (en) 2011-09-01
KR20140104017A (ko) 2014-08-27
US20170299966A1 (en) 2017-10-19
KR20120115588A (ko) 2012-10-18
JP4862923B2 (ja) 2012-01-25
KR101441844B1 (ko) 2014-09-17
KR101915921B1 (ko) 2019-01-07
JP2012129556A (ja) 2012-07-05
KR101343655B1 (ko) 2013-12-20
JP6319410B2 (ja) 2018-05-09
KR101769722B1 (ko) 2017-08-18
KR101475995B1 (ko) 2014-12-23
JP4524670B2 (ja) 2010-08-18
JP5708546B2 (ja) 2015-04-30
JP5353925B2 (ja) 2013-11-27
EP1662554A1 (de) 2006-05-31
JP4784654B2 (ja) 2011-10-05
US10209622B2 (en) 2019-02-19
US20130128244A1 (en) 2013-05-23
JP2014103408A (ja) 2014-06-05
JP2009081479A (ja) 2009-04-16
JP2011109147A (ja) 2011-06-02
KR20060126901A (ko) 2006-12-11
JP5949878B2 (ja) 2016-07-13
JP6390592B2 (ja) 2018-09-19
KR101259095B1 (ko) 2013-04-30
JP2016048384A (ja) 2016-04-07
KR101239632B1 (ko) 2013-03-11
KR101613384B1 (ko) 2016-04-18
KR20170094004A (ko) 2017-08-16
KR20180120816A (ko) 2018-11-06
KR20110123784A (ko) 2011-11-15
JP2015029160A (ja) 2015-02-12
KR20160044594A (ko) 2016-04-25
US10203608B2 (en) 2019-02-12
JP2017068277A (ja) 2017-04-06
JP5761326B2 (ja) 2015-08-12
US8064037B2 (en) 2011-11-22
JPWO2005020299A1 (ja) 2006-10-19
JP2018049295A (ja) 2018-03-29
KR20140002075A (ko) 2014-01-07
JP2009290222A (ja) 2009-12-10
KR20120066078A (ko) 2012-06-21

Similar Documents

Publication Publication Date Title
EP1662554A4 (de) Belichtungsvorrichtung, belichtungsverfahren und bauelementeherstellungsverfahren
HK1090174A1 (en) Exposure apparatus, substrate carrying method, exposure method, and method for producing device
EP2264531A3 (de) Belichtungsgerät und Verfahren zur Herstellung einer Vorrichtung
TW200509205A (en) Exposure method and device-manufacturing method
EP1670039A4 (de) Belichtungsvorrichtung und bauelemente-herstellungsverfahren
SG148994A1 (en) Exposure apparatus, exposure method, method for producing device, and optical part
HK1138074A1 (en) Exposure equipment, exposure method and device manufacturing method
EP2284614A3 (de) Belichtungsgerät, Belichtungsverfahren und Verfahren zur Herstellung einer Vorrichtung
SG158744A1 (en) Exposure apparatus and method for producing device
TW200622838A (en) Controlling a light source of an optical pointing device based on surface quality
EP3093873A3 (de) Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung
EP1643543A4 (de) Verknüpfungseinheit, belichtungsvorrichtung und verfahren zur bauelementeerstellung
EP2256790A3 (de) Beleuchtungseinrichtung, Vorrichtungsherstellungsverfahren und Wartungsverfahren
SG10201809095SA (en) Exposure apparatus, exposure method, and method for producing device
TW200502720A (en) Immersion photolithography system and method using inverted wafer-projection optics interface
TW200700926A (en) Optical element, exposure apparatus, and device manufacturing method
WO2004033027A3 (en) Radiation process and apparatus
SG140603A1 (en) Liquid recovery apparatus, exposure apparatus, exposure method, and device manufacturing method
EP1705520A3 (de) Belichtungsgerät und Belichtungsverfahren sowie Verfahren zur Herstellung einer Leiterplatte
EP3007207A3 (de) Projektionsbelichtungsvorrichtung, reinigungs- und wartungsverfahren einer projektionsbelichtungsvorrichtung und verfahren zur herstellung einer vorrichtung
WO2008135865A3 (en) Exposing printing plates using light emitting diodes
TW200512546A (en) Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1715383A3 (de) Belichtungsanlage
GB0305753D0 (en) Exposure apparatus for irradiating a sensitized substrate
TW200607008A (en) Light irradiation apparatus, crystallization apparatus, crystallization method and device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20060303

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PL PT RO SE SI SK TR

DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1090172

Country of ref document: HK

A4 Supplementary search report drawn up and despatched

Effective date: 20071227

17Q First examination report despatched

Effective date: 20080425

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: NIKON CORPORATION

RTI1 Title (correction)

Free format text: EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD

RIN1 Information on inventor provided before grant (corrected)

Inventor name: NAGASAKA, HIROYUKI,C/O NIKON CORPORATION

Inventor name: ISHII, YUUKI,C/O NIKON CORPORATION

Inventor name: MAKINOUCHI, SUSUMU,C/O NIKON CORPORATION

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20101207

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1090172

Country of ref document: HK