EP1279966A3 - Apparatus and method for determining the reliability of integrated semiconductor circuits at high temperatures - Google Patents

Apparatus and method for determining the reliability of integrated semiconductor circuits at high temperatures Download PDF

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Publication number
EP1279966A3
EP1279966A3 EP02014934A EP02014934A EP1279966A3 EP 1279966 A3 EP1279966 A3 EP 1279966A3 EP 02014934 A EP02014934 A EP 02014934A EP 02014934 A EP02014934 A EP 02014934A EP 1279966 A3 EP1279966 A3 EP 1279966A3
Authority
EP
European Patent Office
Prior art keywords
reliability
integrated semiconductor
determining
high temperatures
semiconductor circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02014934A
Other languages
German (de)
French (fr)
Other versions
EP1279966A2 (en
EP1279966B1 (en
Inventor
Wilhelm Asam
Josef Fazekas
Andreas Martin
David Smeets
Jochen Von Hagen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
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Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1279966A2 publication Critical patent/EP1279966A2/en
Publication of EP1279966A3 publication Critical patent/EP1279966A3/en
Application granted granted Critical
Publication of EP1279966B1 publication Critical patent/EP1279966B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317—Testing of digital circuits
    • G01R31/3173—Marginal testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/286—External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2868—Complete testing stations; systems; procedures; software aspects
    • G01R31/287—Procedures; Software aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2872—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2879—Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/261—Amplifier which being suitable for instrumentation applications

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Power Engineering (AREA)
  • Automation & Control Theory (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Die Erfindung betrifft eine Vorrichtung und ein Verfahren zur Erfassung einer Zuverlässigkeit von integrierten Halbleiterbauelementen mit einem Trägersubstrat (1) zum Aufnehmen eines zu untersuchenden integrierten Halbleiterbauelements (HBE), einem Heizelement (HE) und einem Temperatursensor (TS), wobei der Temperatursensor (TS) zumindest teilweise ein parasitäres Funktionselement des Halbleiterbauelements (HBE) aufweist. Dadurch können Zuverlässigkeitstests besonders genau und platzsparend durchgeführt werden.

Figure 00000001
The invention relates to a device and a method for detecting the reliability of integrated semiconductor components with a carrier substrate (1) for receiving an integrated semiconductor component (HBE) to be examined, a heating element (HE) and a temperature sensor (TS), the temperature sensor (TS) at least partially has a parasitic functional element of the semiconductor component (HBE). This means that reliability tests can be carried out particularly precisely and in a space-saving manner.
Figure 00000001
EP02014934A 2001-07-23 2002-07-08 Apparatus and method for determining the reliability of integrated semiconductor circuits at high temperatures Expired - Fee Related EP1279966B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10135805A DE10135805A1 (en) 2001-07-23 2001-07-23 Device and method for detecting the reliability of integrated semiconductor components at high temperatures
DE10135805 2001-07-23

Publications (3)

Publication Number Publication Date
EP1279966A2 EP1279966A2 (en) 2003-01-29
EP1279966A3 true EP1279966A3 (en) 2003-07-16
EP1279966B1 EP1279966B1 (en) 2005-04-20

Family

ID=7692778

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02014934A Expired - Fee Related EP1279966B1 (en) 2001-07-23 2002-07-08 Apparatus and method for determining the reliability of integrated semiconductor circuits at high temperatures

Country Status (4)

Country Link
US (2) US6787799B2 (en)
EP (1) EP1279966B1 (en)
CN (1) CN1237596C (en)
DE (1) DE10135805A1 (en)

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US20060066335A1 (en) * 2004-09-28 2006-03-30 Kang Seung H Semiconductor test device with heating circuit
DE102004047752B3 (en) * 2004-09-30 2006-01-26 Infineon Technologies Ag Semiconductor component with temperature sensor
CN100399037C (en) * 2005-04-30 2008-07-02 中国科学院空间科学与应用研究中心 Screening method for commercial plastic packaging device space application
DE102005043270B4 (en) * 2005-09-12 2011-06-22 Infineon Technologies AG, 81669 Device for monitoring the temperature of planar field-effect transistors and associated production method
DE102005043271B4 (en) * 2005-09-12 2011-07-28 Infineon Technologies AG, 81669 Device for measuring the temperature in vertically structured semiconductor devices during operation and combined test structure for detecting the reliability
EP2042989A1 (en) * 2006-02-03 2009-04-01 Research In Motion Limited System and method for extending a component-based application platform with custom services
DE102006007040A1 (en) * 2006-02-15 2007-08-16 Austriamicrosystems Ag Component with integrated heating element and method for heating a semiconductor body
DE102006013721B4 (en) * 2006-03-24 2011-12-08 Infineon Technologies Ag Semiconductor circuit arrangement and associated method for temperature detection
US7835129B2 (en) 2006-03-29 2010-11-16 Infineon Technologies Ag Circuit arrangement for overtemperature detection
DE102007008389B4 (en) * 2006-03-29 2014-07-17 Infineon Technologies Ag Circuit arrangement for overtemperature detection
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US7759957B2 (en) * 2007-07-27 2010-07-20 United Microelectronics Corp. Method for fabricating a test structure
US8680523B2 (en) * 2010-12-16 2014-03-25 IP Cube Partners (ICP) Co., Ltd. Sensor for semiconductor degradation monitoring and modeling
US9076751B2 (en) * 2011-08-30 2015-07-07 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices with self-heating structures, methods of manufacture thereof, and testing methods
US9006000B2 (en) 2012-05-03 2015-04-14 Sandisk Technologies Inc. Tj temperature calibration, measurement and control of semiconductor devices
US9329614B1 (en) * 2012-07-31 2016-05-03 Cirrus Logic, Inc. Bandgap with thermal drift correction
DE102013204467A1 (en) * 2013-03-14 2014-09-18 Zf Friedrichshafen Ag Arrangement for testing a device for protecting an electronic device against overheating and associated method
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KR102116147B1 (en) * 2014-03-06 2020-05-28 매그나칩 반도체 유한회사 Buried Magnetic Sensor
CN106483439B (en) * 2015-08-31 2019-05-28 中芯国际集成电路制造(上海)有限公司 The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor
CN106526442B (en) * 2015-09-09 2019-05-28 中芯国际集成电路制造(上海)有限公司 The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor
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Also Published As

Publication number Publication date
US6873170B2 (en) 2005-03-29
CN1237596C (en) 2006-01-18
US6787799B2 (en) 2004-09-07
EP1279966A2 (en) 2003-01-29
EP1279966B1 (en) 2005-04-20
DE10135805A1 (en) 2003-02-13
US20040140826A1 (en) 2004-07-22
US20030020131A1 (en) 2003-01-30
CN1399323A (en) 2003-02-26

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