CN106526442B - The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor - Google Patents
The self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor Download PDFInfo
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Abstract
A kind of the self-heating effect evaluation method and self-heating effect evaluation system of ldmos transistor, the self-heating effect evaluation system includes ldmos transistor and temperature sensing device, the temperature sensing device is loaded with a predetermined current, and the voltage and temperature for making the temperature sensing device have corresponding relationship；According to temperature measurement unit, the temperature of temperature sensing device can be obtained；Temperature of the temperature for the temperature sensing device that self-heating effect evaluation unit is obtained according to temperature measurement unit as the ldmos transistor, and the relationship between the source-drain current value of ldmos transistor and signal voltage, temperature can be obtained according to the temperature and the source-drain current value of the ldmos transistor, signal voltage of the ldmos transistor.Therefore, the present invention can simulate influence of the self-heating effect to ldmos transistor I-V curve, it, can be using self-heating effect as the reference quantity of the source-drain current value of influence ldmos transistor, so that the design performance of ldmos transistor is closer to actual performance in subsequent conditioning circuit design.
Description
Technical field
The present invention relates to semiconductor field, in particular to the self-heating effect evaluation method of a kind of ldmos transistor and from
Fuel factor evaluation system.
Background technique
Compared with common field effect transistor, LDMOS (lateral double-diffused MOSFET) transistor
There is apparent advantage in terms of the device properties such as gain, the linearity, switch performance, heat dissipation performance and reduction series, therefore
It is widely applied.
Ldmos transistor is a kind of high tension apparatus, is displayed for device driving IC or radio-frequency devices.Due to being usually used in
Under condition of high voltage, temperature is higher at work for ldmos transistor, usually reaches 100 degrees Celsius or more, at these high temperatures,
Ldmos transistor can generate performance degradation.Such as: as temperature increases, the source and drain equivalent resistance of ldmos transistor becomes larger, and makes
It obtains drain current to reduce, this phenomenon is referred to as the self-heating effect of ldmos transistor.
When carrying out semiconductor device design, need to consider the self-heating effect of ldmos transistor, that is, need to find it is current certain
The I-V curve of one model ldmos transistor and the relationship of ldmos transistor operating temperature, but the prior art can not be in LDMOS
The temperature that ldmos transistor is directly measured when transistor works, is also just difficult to consider self-heating when carrying out ldmos transistor design
This factor of effect, so that the ldmos transistor performance designed is difficult to comply with standard.
Therefore, how ldmos transistor temperature at work and I-V curve are measured simultaneously, with to carry out LDMOS brilliant
Body pipe reasonably considers self-heating effect when designing, and becomes those skilled in the art's urgent problem to be solved.
Summary of the invention
Problems solved by the invention is to provide the self-heating effect evaluation method and self-heating effect of a kind of ldmos transistor
Evaluation system, for improving the breakdown voltage of ldmos transistor while guaranteeing that area shared by transistor does not increase.
To solve the above problems, the present invention provides a kind of self-heating effect evaluation system of ldmos transistor, comprising:
Ldmos transistor；
Ldmos transistor control unit, for the ldmos transistor grid and source electrode apply grid voltage respectively
And signal voltage, so that the ldmos transistor is generated self-heating effect and measures the source-drain current value of the ldmos transistor；
Temperature sensing device, it is adjacent with the ldmos transistor, it can be in the work of the ldmos transistor self-heating effect
With lower generation temperature change；The temperature sensing device is loaded with a predetermined current, for making the electricity of the temperature sensing device
Pressure has corresponding relationship with temperature；
Temperature measurement unit, for measuring the voltage of the temperature sensing device, to obtain the temperature sensing device
Temperature, and the temperature as the ldmos transistor；
Self-heating effect evaluation unit, it is the temperature of the ldmos transistor for being obtained according to temperature measurement unit, described
The source-drain current value and signal voltage for the ldmos transistor that ldmos transistor control unit obtains, obtain the LDMOS crystal
Relationship between the source-drain current value of pipe, signal voltage and temperature.
Optionally, the temperature sensing device is booster diode.
Optionally, the ldmos transistor and the booster diode are formed on a substrate, are additionally provided with and are mixed in the substrate
Miscellaneous separation layer, the ldmos transistor are located on the doping separation layer.
Optionally, the booster diode includes close to the first pole of the ldmos transistor and far from the LDMOS crystalline substance
Second pole of body pipe, first pole are located on the doping separation layer, and second is extremely not set on the doping separation layer.
Optionally, the first pole ground connection of the booster diode, the temperature measurement unit are used for two poles of the auxiliary
Second pole of pipe provides the predetermined current, for making the voltage of second pole of booster diode have corresponding close with temperature
System；
The temperature measurement unit includes:
Power supply is electrically connected with the second pole of the booster diode, for providing electric current for the booster diode；
Voltage measurement unit, for measuring the voltage of second pole of booster diode；
Computing unit, the corresponding relationship of voltage and temperature based on the second pole of booster diode, according to two poles of the auxiliary
The voltage of the second pole of pipe obtains the temperature of booster diode.
Optionally, the temperature measurement unit further includes the switching device being set between second pole and power supply, institute
Switching device is stated for being electrically connected to a power source second pole when the ldmos transistor is opened.
Optionally, the switching device is MOS transistor, the grid of the MOS transistor and the ldmos transistor
Grid electrical connection, for opening the MOS transistor when the ldmos transistor is opened, and then make second pole with
Power electric connection.
Optionally, the self-heating effect evaluation system further include:
Heating device makes described for heating the substrate when power supply applies the predetermined current to booster diode
The temperature of booster diode increases；
The voltage of temperature and voltage measurement unit measurement of the computing unit based on heating device obtains auxiliary two
The voltage of pole pipe and the corresponding relationship of temperature.
Optionally, the heating device is equipped with temperature measurement device, the temperature for heating device described in real time reaction.
Optionally, the computing unit includes:
Storage unit, the preliminary expression formula of the voltage-temperature function for storing the booster diode
Wherein IdFor the predetermined current provided the booster diode, Vd is first pole of booster diode
Voltage, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are and the booster diode itself property
The constant of qualitative correlation, the preliminary expression formula can simplify as Vd=aT+b；
Fitting unit, multiple groups temperature T for being obtained under the predetermined current in the step of heating the substrate and
Booster diode the second pole tension Vd substitutes into the simplified preliminary expression formula, obtains the voltage-temperature function
Final expression formula, using the final expression formula as the voltage of temperature sensing device and the corresponding relationship of temperature.
Optionally, the effective temperature that the booster diode can be measured that is within 800K.
The present invention also provides a kind of self-heating effect evaluation method of ldmos transistor, the ldmos transistor is located at substrate
On, temperature sensing device is additionally provided on the substrate, the ldmos transistor and temperature sensing device are adjacent, the temperature
Sensing device can generate temperature change under the action of the ldmos transistor self-heating effect, which is characterized in that the evaluation
Method includes:
The substrate is heated, the temperature of temperature sensing device is increased, a default electricity is applied to the temperature sensing device
Stream measures at different temperatures, the voltage value of the temperature sensing device, to obtain the voltage and temperature of the temperature sensing device
The corresponding relationship of degree；
So that the ldmos transistor and temperature sensing device is restored room temperature, grid are applied to the grid of the ldmos transistor
Pole tension applies signal voltage to source electrode, and the ldmos transistor is made to work；
The predetermined current is applied to the temperature sensing device, the LDMOS described in the ldmos transistor course of work is brilliant
The self-heating effect of body pipe increases the temperature sensing device temperature；
In temperature sensing device temperature elevation process, the voltage value of the temperature sensing device is measured, and based on described
Voltage and the corresponding relationship of temperature obtain the temperature of the temperature sensing device, the Current Temperatures as the ldmos transistor；
Under each temperature value of ldmos transistor, change the signal voltage, and measures and flow through the LDMOS crystalline substance
The source-drain current value of body pipe, obtains the corresponding relationship of signal voltage and source-drain current value under each temperature value, in conjunction with multiple temperature
The signal voltage of value and the corresponding relationship of source-drain current value obtain the signal voltage of the ldmos transistor, source-drain current value and
Relationship between temperature.
Optionally, the temperature sensing device is booster diode, and the booster diode includes the first pole and the second pole,
The first pole ground connection, voltage value of second pole of booster diode under the predetermined current and temperature meet voltage-temperature
Spend function；
The step of providing predetermined current to the temperature sensing device includes: by described second extremely to two poles of the auxiliary
Pipe provides the predetermined current；
The step of measuring the voltage value of the temperature sensing device includes: the voltage for measuring second pole of booster diode
Value.
Optionally, obtain the temperature sensing device electric current and temperature corresponding relationship the step of include: according to
The voltage-temperature function of booster diode obtains the voltage of the temperature sensing device and the corresponding relationship of temperature, the auxiliary
The preliminary expression formula of the voltage-temperature function of diode
Wherein IdFor the predetermined current provided the booster diode, Vd is second pole of booster diode
Voltage, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are and the booster diode itself property
The constant of qualitative correlation, the preliminary expression formula can simplify as Vd=aT+b；
By the predetermined current IdUnder obtained multiple groups temperature T and electric current IdBring simplified preliminary expression formula V intod=a
T+b obtains constant a and constant b, obtains the final expression formula of the voltage-temperature function, using the final expression formula as temperature
Spend the voltage of sensing device and the corresponding relationship of temperature.
Optionally, the step of heating the substrate includes: to make the substrate temperature in the range of 300 to 800K.
Compared with prior art, technical solution of the present invention has the advantage that
In the self-heating effect evaluation system of ldmos transistor of the present invention, the self-heating effect evaluation system includes LDMOS crystalline substance
Body pipe and temperature sensing device, the temperature sensing device are loaded with a predetermined current, for making the temperature sensing device
Voltage and temperature have corresponding relationship；According to temperature measurement unit, the voltage of the temperature sensing device can be measured, and then is obtained
To the temperature of the temperature sensing device；The temperature inductor that the self-heating effect evaluation unit is obtained according to temperature measurement unit
Temperature of the temperature of part as the ldmos transistor, and can be according to the temperature of the ldmos transistor and described
The source-drain current value of ldmos transistor, signal voltage obtain the source-drain current value and signal voltage, temperature of the ldmos transistor
Relationship between degree.Therefore, the present invention can simulate influence of the self-heating effect to the ldmos transistor I-V curve, subsequent
Circuit design in, between the source-drain current value and signal voltage, temperature of the ldmos transistor that can be obtained according to the present invention
Relationship, using self-heating effect as the reference quantity for the source-drain current value for influencing ldmos transistor, so that ldmos transistor
Design performance is closer to actual performance, to improve the quality of integrated circuit.
Detailed description of the invention
Fig. 1 is the functional schematic of one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention；
Fig. 2 is the structural schematic diagram of one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention；
Fig. 3 is the schematic diagram of one embodiment of self-heating effect evaluation method of ldmos transistor of the present invention.
Specific embodiment
As stated in the background art, the self-heating effect of ldmos transistor is affected to ldmos transistor performance, into
It when row semiconductor device design, needs to consider the self-heating effect of ldmos transistor, that is, needs to find current a certain model LDMOS
The I-V curve of transistor and the relationship of ldmos transistor operating temperature, but the prior art can not work in ldmos transistor
When directly measure the temperature of ldmos transistor, be also just difficult to consider when carrying out ldmos transistor design self-heating effect this because
Element, so that the ldmos transistor performance designed is difficult to comply with standard.
In order to solve the technical problem, the present invention provides a kind of self-heating effect evaluation system of ldmos transistor.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
With reference to Fig. 1, the schematic diagram of one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention is shown.This
The self-heating effect evaluation system of embodiment ldmos transistor includes:
Ldmos transistor 201 and ldmos transistor control unit 204.The ldmos transistor control unit 204 is used for
Grid voltage is applied to the grid (not shown) of the ldmos transistor 201, applies signal voltage to source electrode (not shown), also
For measuring the source-drain current value of the ldmos transistor 201
Temperature sensing device, the temperature sensing device is adjacent with the ldmos transistor 201, can be in the LDMOS
Temperature change is generated under the action of the self-heating effect of transistor 201；The temperature sensing device is loaded with a predetermined current, is used for
The voltage and temperature for making the temperature sensing device have corresponding relationship.
Specifically, in the present embodiment, the temperature sensing device is booster diode 202, the ldmos transistor
201 and booster diode 202 it is adjacent, the booster diode 202 can be in the work of 201 self-heating effect of ldmos transistor
With lower generation temperature change.When applying a predetermined current to the booster diode 202, the electricity of the booster diode 202
Pressure has corresponding relationship with temperature.
That is, the performance of the booster diode 202 is influenced by 201 self-heating effect of ldmos transistor,
So that different shape is presented in the I-V curve of the booster diode 202 at different temperatures.
It continues to refer to figure 1, the present embodiment self-heating effect evaluation system further includes temperature measurement unit 203, for measuring
The voltage for stating temperature sensing device obtains the temperature of the temperature sensing device.
Self-heating effect evaluation unit 205, the temperature conduct of the temperature sensing device for being obtained according to temperature measurement unit
The temperature of the ldmos transistor 201 is also used to temperature and the LDMOS crystal according to the ldmos transistor 201
The source-drain current value of pipe 201, signal voltage obtain between the source-drain current value of the ldmos transistor and signal voltage, temperature
Relationship.
According to the present embodiment self-heating effect evaluation system, the self-heating effect of the ldmos transistor 201 can be evaluated into
Row simulation, obtains the relationship between the source-drain current value and signal voltage, temperature of the ldmos transistor 201.The LDMOS
The method that the self-heating effect evaluation of transistor 201 is simulated generally comprises:
The substrate is heated, the temperature of temperature sensing device is increased, predetermined current is applied to the temperature sensing device,
It measures at different temperatures, the voltage value of the temperature sensing device, to obtain the voltage and temperature of the temperature sensing device
Corresponding relationship.
So that the ldmos transistor 201 and temperature sensing device is restored room temperature, it is single to control the ldmos transistor control
Member 204 works, and applies grid voltage to the grid of the ldmos transistor 201, applies signal voltage to source electrode, makes described
Ldmos transistor 201 works；The predetermined current is applied to the temperature sensing device, it is worked in ldmos transistor 201
The self-heating effect of ldmos transistor 201 described in journey increases the temperature sensing device temperature；
In temperature sensing device temperature elevation process, the temperature sense is measured using the temperature measurement unit 203
The voltage value of device, and the corresponding relationship based on the voltage and temperature obtains the temperature of the temperature sensing device, as institute
State the Current Temperatures of ldmos transistor 201.
Under each temperature value of ldmos transistor 201, change the signal voltage, and measures and flow through the LDMOS
The source-drain current value of transistor 201.
Using the self-heating effect evaluation unit 205, according to the temperature for the temperature sensing device that temperature measurement unit 203 obtains
The temperature as the ldmos transistor 201 is spent, the pass corresponding with source-drain current value of signal voltage under each temperature value is obtained
System obtains the signal of the ldmos transistor 201 in conjunction with the signal voltage of multiple temperature values and the corresponding relationship of source-drain current value
Relationship between voltage, source-drain current value and temperature.
2 are please referred to, the structural schematic diagram of the present embodiment self-heating effect evaluation system is shown, in conjunction with reference Fig. 2, this implementation
Example self-heating effect evaluation system include:
Substrate 100, the ldmos transistor 201 and temperature sensing device are located on substrate 100.In the present embodiment, institute
Stating substrate 100 is P type substrate.The material of the substrate 100 is silicon.In other embodiments, the substrate 100 of the p-type may be used also
Think body silicon substrate, body germanium substrate, germanium silicon substrate, silicon carbide substrates, silicon-on-insulator substrate or germanium substrate on insulator etc. its
His semiconductor substrate, or the multilayer lamination structure including at least one layer of interlayer dielectric layer can also be formed in the substrate 100
There are the semiconductor devices such as transistor, diode and metal interconnection structure, the invention is not limited in this regard.
In the present embodiment, doping separation layer 101 is additionally provided on the substrate 100, the ldmos transistor 201 is located at
On the doping separation layer 101, the booster diode 202 is located at the doping close to a pole of the ldmos transistor 201
On separation layer 101.In the present embodiment, the doping type of the doping separation layer 101 is N-type.
The booster diode 202 includes close to the first pole 112 of the ldmos transistor 201 and far from the LDMOS
Second pole 113 of transistor 201, first pole 112 are located on the doping separation layer 103, and the second pole 113 is not set in institute
It states on doping separation layer 103.In the present embodiment, first pole 112 is attached most importance to N-doped zone, and attach most importance to P for second pole 113
Type doped region, first pole 112 are grounded.
In the present embodiment, the doping separation layer 103 is equipped with the first doped layer 102, first doped layer 102
Doping type is p-type.The ldmos transistor 201 includes the source electrode 109 being located on the first doped layer 102, drain electrode 110, is located at
Channel (not shown) and the grid 120 on the channel, the grid 120 between source electrode 109, drain electrode 110 are connected to control
Current potential Vg processed.
The first isolation structure 119, the source electrode 109 and the first isolation structure 119 are equipped between the source electrode 109 and channel
It is set in a drift region 105, the drift region 105 is N-type drift region.The source electrode 109 is electrically connected with a controlling potential Vdd
It connects, the drain electrode 110 is connected to a low potential (being ground connection in the present embodiment), the doping type of the source electrode 109 and drain electrode 110
It is identical.Specifically, in the present embodiment, the source electrode 109 and drain electrode 110 is attached most importance to N-doped zone.The source electrode 109 is far from institute
Booster diode 202 is stated, it is described to drain 110 close to the booster diode 202.
The ldmos transistor 201 further includes the 5th pole 111 between first pole 112 and drain electrode 110, institute
It is different with the doping type of drain electrode 110 to state the 5th pole 111, P-doped zone of attaching most importance to.
It is equipped with the second isolation structure 118 between the drain electrode 110 and the 5th pole 111, the ldmos transistor 201 also wraps
The second doped layer 106 being located on first doped layer 102 is included, second doped layer 106 is p-type lightly doped district, with institute
The first doped layer 102 for stating p-type is connected.The drain electrode 110 and the 5th pole 111 are located in second doped layer 106, and described the
Five poles 111 ground connection, for adjusting the current potential of second doped layer 106.
The booster diode 202 further includes third doped region 107 and the 4th doped region 108, and first pole 112 is located at
In the third doped region 107, second pole 113 is located in the 4th doped region 108, the doping of the third doped region 107
Type is N-type, and the doping type of the 4th doped region is p-type.
To sum up, the ldmos transistor 201 is N-type ldmos transistor, by the way that the drift region 105 is arranged, so that institute
It states and forms resistive formation between the first pole 112 of ldmos transistor 201 and the second pole 113, make the breakdown potential of ldmos transistor 201
Pressure improves, so as to be used for high tension apparatus.But the present invention to the specific structure of the ldmos transistor 201 with no restrictions.
With continued reference to Fig. 2, in the present embodiment, when the booster diode 202 applies a predetermined current, the auxiliary two
The voltage and temperature of pole pipe 202 have corresponding relationship.The temperature measurement unit 203 includes:
Diode power source 131 is electrically connected with the second pole 113 of the booster diode 202, for two poles of the auxiliary
Pipe 202 applies voltage.
Voltage measurement unit 132, for measuring 113 voltage of the second pole of the booster diode 202 (due to the first pole
112 ground connection, the voltage of 113 voltage of the second pole, that is, booster diode 202).
Computing unit (not shown), 113 voltage of the second pole based on the booster diode 202 is corresponding with electric current to close
System obtains the temperature of booster diode 202 according to the voltage of the booster diode 202.
Specifically, in the present embodiment, the first pole 112 and the second pole 113 of the booster diode 202 can pass through gold
Belong to plug and be connected to peripheral circuit, the diode power source 131 and voltage measurement unit 132 can be set in peripheral circuit.
The computing unit can be set in the integrated circuit in 202 outside of booster diode, the invention is not limited in this regard.
The self-heating effect evaluation system further include: heating device (not shown), in diode power source 132 to auxiliary
Diode 202 heats the substrate 100 when applying a predetermined current, makes the ldmos transistor 201 and booster diode 202
Temperature increase.Specifically, the heating device can be heating cushion or heating furnace, the invention is not limited in this regard.At this
In embodiment, the heating device is equipped with temperature measurement device, and the temperature measurement device can heat described in real time reaction
The temperature of device.
It should be noted that in the present embodiment, temperature and the voltage of the computing unit based on heating device are surveyed
It measures the voltage that unit 132 measures and obtains the voltage of booster diode 202 and the corresponding relationship of temperature.
In the present embodiment, specifically, the computing unit includes:
Storage unit, the preliminary expression formula of the voltage-temperature function for storing the booster diode
Wherein IdFor the predetermined current provided the booster diode, Vd is the electricity of first pole of booster diode
Pressure, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are and the booster diode self property
Relevant constant, the preliminary expression formula can simplify as Vd=aT+b.
Fitting unit, in the step of heating substrate 100, in a predetermined current IdUnder obtained multiple groups temperature
The 113 voltage Vd of the second pole of T and the booster diode 202 substitutes into the simplified preliminary expression formula, obtains the voltage-
The final expression formula of temperature funtion, using the final expression formula as the electric current of temperature sensing device and the corresponding relationship of temperature.
Therefore, when carrying out the simulation of self-heating effect using the self-heating effect evaluation system of the present embodiment ldmos transistor,
Storage unit and fitting unit can obtain the voltage of temperature sensing device and the corresponding relationship of temperature in the computing unit.
After obtaining the corresponding relationship, the ldmos transistor 201 and temperature sensing device is made to restore room temperature, it is right
The grid of the ldmos transistor 201 applies grid voltage Vg, applies signal voltage Vdd to source electrode, makes the LDMOS crystal
Pipe 201 works, and applies the predetermined current to the booster diode 202, described in 201 course of work of ldmos transistor
The self-heating effect of ldmos transistor 201 increases 202 temperature of booster diode.
In 202 temperature elevation process of booster diode, two poles of the auxiliary are flowed through in the measurement of voltage measurement unit 132
The voltage value of 202 second pole 113 of pipe.Corresponding relationship and the voltage of the computing unit based on the voltage and temperature
The voltage that measuring unit 132 measures, can obtain the temperature of institute's booster diode 202, as the ldmos transistor 201
Current Temperatures T.The self-heating effect evaluation unit 205 is brilliant according to the temperature of the ldmos transistor 201 and the LDMOS
Source-drain current value Ids, the signal voltage Vdd of body pipe 201 obtain the source-drain current value Ids and letter of the ldmos transistor 201
Relationship number between voltage Vdd, temperature T.
It should be noted that the ldmos transistor 201 can be prior art disposable type in the present embodiment
Ldmos transistor can be using the present invention certainly before carrying out IC design using various model ldmos transistors
Fuel factor evaluation system carries out the simulation of self-heating effect to the ldmos transistor of required different model.
It should also be noted that, the booster diode 202 in the present embodiment self-heating effect evaluation system is in the prior art
For controlling the diode of the current potential of the doping separation layer 101 and substrate 100, the first pole 112 of the booster diode 202
For controlling the current potential of the doping separation layer 101, the second pole 113 of the booster diode 202 is for controlling the substrate
100 current potential.That is, booster diode 202 and ldmos transistor 201 in the present embodiment self-heating effect evaluation system
Adjacent structure can be LDMOS transistor structure in the prior art, so that the present embodiment self-heating effect evaluation system structure
Simply, the simulation of ldmos transistor self-heating effect is carried out using the present embodiment self-heating effect evaluation system, without to existing
Ldmos transistor is redesigned.
It should also be noted that, in the present embodiment, the temperature measurement unit further includes being set to second pole 113
Switching device 133 between diode power source 131, the switching device 133 are used for when the ldmos transistor is opened,
It is electrically connected second pole 113 with diode power source 131.
The switching device 133 is MOS transistor, the grid of the MOS transistor and the ldmos transistor 201
Grid electrical connection, for opening the MOS transistor, and then make described second when the ldmos transistor 201 is opened
Pole 113 is electrically connected with diode power source 131.
It is such to be advantageous in that, by the way that the switching device 133 is arranged, can be realized to the ldmos transistor 201
Grid apply grid voltage Vg when, the predetermined current synchronously is applied to the booster diode 202, therefore by described auxiliary
The temperature for helping 202 first pole of diode, 103 voltage value measurement to obtain can reflect the ldmos transistor 201 much sooner
Temperature caused by self-heating effect increases, and the temperature for obtaining the temperature sensing device measurement is more acurrate.But the present invention is to being
The no setting switching device 133 is with no restrictions.
The present invention also provides a kind of ldmos transistor self-heating effect evaluation method, the self-heating effect evaluation method can be with
But it is not limited to be applied to self-heating effect evaluation system provided by the present invention.Ldmos transistor self-heating effect of the present invention evaluation side
The application conditions of method are as follows: ldmos transistor is located on substrate, and temperature sensing device, the LDMOS are additionally provided on the substrate
Transistor and temperature sensing device are adjacent, and the temperature sensing device can be in the effect of the ldmos transistor self-heating effect
Lower generation temperature change, the self-heating effect evaluation method include:
The self-heating effect evaluation system of ldmos transistor provided by the invention is provided.Specifically, in the present embodiment, may be used
To provide self-heating effect evaluation system described in above-described embodiment, therefore can continue to refer to figure 1 to Fig. 2, the self-heating effect
Details are not described herein for the specific structure of evaluation system.
With continued reference to Fig. 2, in the present embodiment, the evaluation method is specifically included:
The substrate 100 is heated, the temperature of booster diode 202 is increased, the booster diode 202 is applied default
Electric current measures at different temperatures, the voltage value of the booster diode 202, to obtain the voltage of the booster diode 202
With the corresponding relationship of temperature.
It should be noted that including: logical to the step of temperature sensing device application predetermined current in the present embodiment
It crosses second pole 113 and predetermined current is applied to the booster diode 202；The voltage of the temperature sensing device is flowed through in measurement
The step of value includes: the voltage value for measuring 202 second pole 113 of booster diode.
After obtaining the voltage of the booster diode 202 and the corresponding relationship of temperature, make the ldmos transistor 201
Restore room temperature with booster diode 202, grid voltage Vg is applied, to source electrode 109 to the grid 120 of the ldmos transistor 201
Apply signal voltage Vdd, the ldmos transistor 201 is made to work.
The predetermined current is applied to the booster diode 202 by second pole 113, in ldmos transistor 201
The self-heating effect of ldmos transistor 201 described in the course of work increases 202 temperature of booster diode.
In 202 temperature elevation process of booster diode, the voltage value of 202 second pole 113 of booster diode is measured,
And the corresponding relationship based on the voltage and temperature obtains the temperature of the booster diode 202, as the ldmos transistor
201 Current Temperatures.
Under each temperature value of ldmos transistor 201, change the signal voltage, and measures and flow through the LDMOS
The source-drain current value of transistor 201, obtains the corresponding relationship of signal voltage and source-drain current value under each temperature value, in conjunction with multiple
The signal voltage of temperature value and the corresponding relationship of source-drain current value obtain the signal voltage of the ldmos transistor 201, source and drain electricity
Relationship between flow valuve and temperature.
Therefore, evaluation method of the present invention can be used in evaluating self-heating effect to the ldmos transistor 201I-V curve
It influences, in subsequent circuit design, the source-drain current value and signal of the ldmos transistor 201 that can be obtained according to the present invention
Relationship between voltage, temperature, using self-heating effect as the reference quantity of the source-drain current value of ldmos transistor 201, so that
The design performance of ldmos transistor 201 is closer to actual performance, to improve the quality of integrated circuit.
Specifically, in the present embodiment, obtain the booster diode 202 voltage and temperature corresponding relationship the step of
Include:
The voltage and temperature of the temperature sensing device are obtained according to the voltage-temperature function of the booster diode 202
Corresponding relationship, the preliminary expression formula of the voltage-temperature function of the booster diode 202
Wherein IdFor the predetermined current provided the booster diode 202, Vd is the booster diode 202 second
The voltage of pole 113, T are the temperature of the booster diode 202, and k is Boltzmann constant, and n, A and Φ are and the auxiliary two
The relevant constant of 202 self property of pole pipe.
In the present embodiment, the step of heating substrate 100 includes: that the substrate temperature is made to arrive 800K's 300
In range.With reference to Fig. 3, show when temperature T is 300 to 800K, the corresponding relationship of T*lnT and T, wherein abscissa is temperature
The value of T, unit K, ordinate T*lnT.As seen from Figure 3, when temperature T is 300 to 800K, the value and T base of T*lnT
In a linear relationship in sheet, therefore, when temperature T is 300 to 800K, the Vd and T in the preliminary expression formula is substantially linear
Relationship, the preliminary expression formula can simplify as Vd=aT+b.That is, the booster diode 202 can be measured that
Effective temperature within 800K, it should be noted that 202 self-heating effect of ldmos transistor causes the raised model of temperature
It encloses substantially also in the range of 300 to 800K.
By the predetermined current IdUnder obtained multiple groups temperature T and electric current IdBring simplified preliminary expression formula V intod=a
T+b obtains constant a and constant b, obtains the final expression formula of the voltage-temperature function, using the final expression formula as temperature
Spend the voltage of sensing device and the corresponding relationship of temperature.
Thus, it is possible to find out, the present embodiment obtains the side of the electric current of the temperature sensing device and the corresponding relationship of temperature
Method is the predetermined current I provided the booster diode 202d, according to measurement 202 second pole 113 of booster diode
Voltage value, obtain the corresponding relationship of voltage and temperature, temperature T 300 to 800K when, voltage pass corresponding with temperature
It is relatively simple, so that the subsequent corresponding relationship based on the voltage and temperature obtains the temperature of the booster diode 202 more
It is convenient and accurate to add so that signal voltage, source-drain current value and the temperature of the ldmos transistor 202 obtained it
Between relationship it is more accurate.
It should also be noted that, in the present embodiment, the temperature measurement unit further includes being set to second pole 113
Switching device 133 between diode power source 131, the switching device 133 are used for when the ldmos transistor is opened,
It is electrically connected second pole 113 with diode power source 131.
The switching device 133 is MOS transistor, the grid of the MOS transistor and the ldmos transistor 201
Grid electrical connection, for opening the MOS transistor, and then make described second when the ldmos transistor 201 is opened
Pole 113 is electrically connected with diode power source 131.
It is such to be advantageous in that, by the way that the switching device 133 is arranged, obtain the voltage of the booster diode 202 with
Apply grid voltage Vg, to the application of source electrode 109 in the grid 120 to the ldmos transistor 201 after the corresponding relationship of temperature
Signal voltage Vdd, make the ldmos transistor 201 work the step of in, synchronously to the booster diode 202 apply institute
Predetermined current is stated, therefore can much sooner by the temperature that 202 second pole of booster diode, the 113 voltage value measurement obtains
Reflect that temperature caused by 201 self-heating effect of ldmos transistor increases, the temperature for obtaining the temperature sensing device measurement
It is more acurrate.But whether the present invention is to being arranged the switching device 133 with no restrictions.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (14)
1. a kind of self-heating effect evaluation system of ldmos transistor characterized by comprising
Ldmos transistor；
Ldmos transistor control unit, for the ldmos transistor grid and source electrode apply grid voltage and letter respectively
Number voltage makes the ldmos transistor generate self-heating effect and measures the source-drain current value of the ldmos transistor；
Temperature sensing device, it is adjacent with the ldmos transistor, it can be under the action of the ldmos transistor self-heating effect
Generate temperature change；The temperature sensing device is loaded with a predetermined current, for make the voltage of the temperature sensing device with
Temperature has corresponding relationship；
Temperature measurement unit, for measuring the voltage of the temperature sensing device, to obtain the temperature of the temperature sensing device,
And the temperature as the ldmos transistor；
Self-heating effect evaluation unit, it is the temperature of the ldmos transistor for being obtained according to temperature measurement unit, described
The source-drain current value and signal voltage for the ldmos transistor that ldmos transistor control unit obtains, obtain the LDMOS crystal
Relationship between the source-drain current value of pipe, signal voltage and temperature；
Wherein, the temperature sensing device is booster diode, and the booster diode includes the first pole and the second pole, described the
One pole ground connection, voltage value of second pole of booster diode under the predetermined current and temperature meet voltage-temperature function.
2. self-heating effect evaluation system according to claim 1, which is characterized in that the ldmos transistor and described auxiliary
Help diode to be formed on a substrate, be additionally provided with doping separation layer in the substrate, the ldmos transistor be located at the doping every
On absciss layer.
3. self-heating effect evaluation system according to claim 2, which is characterized in that the booster diode includes close to institute
The first pole of ldmos transistor and the second pole far from the ldmos transistor are stated, first pole is located at doping isolation
On layer, second is extremely not set on the doping separation layer.
4. self-heating effect evaluation system according to claim 3, which is characterized in that the temperature measurement unit is used for institute
The second pole for stating booster diode provides the predetermined current, and the voltage and temperature for making second pole of booster diode have
There is corresponding relationship；
The temperature measurement unit includes:
Power supply is electrically connected with the second pole of the booster diode, for providing electric current for the booster diode；
Voltage measurement unit, for measuring the voltage of second pole of booster diode；
Computing unit, the corresponding relationship of voltage and temperature based on the second pole of booster diode, according to the booster diode
The voltage of two poles obtains the temperature of booster diode.
5. self-heating effect evaluation system according to claim 4, which is characterized in that the temperature measurement unit further includes setting
The switching device being placed between second pole and power supply, the switching device are used to make when the ldmos transistor is opened
Second pole is electrically connected to a power source.
6. self-heating effect evaluation system according to claim 5, which is characterized in that the switching device is MOS transistor,
The grid of the MOS transistor is electrically connected with the grid of the ldmos transistor, is used for when the ldmos transistor is opened,
The MOS transistor is opened, and then is electrically connected to a power source second pole.
7. self-heating effect evaluation system according to claim 4, which is characterized in that the self-heating effect evaluation system is also wrapped
It includes:
Heating device makes the auxiliary for heating the substrate when power supply applies the predetermined current to booster diode
The temperature of diode increases；
The voltage of temperature and voltage measurement unit measurement of the computing unit based on heating device obtains booster diode
Voltage and temperature corresponding relationship.
8. self-heating effect evaluation system according to claim 7, which is characterized in that the heating device is equipped with thermometer
Measure device, the temperature for heating device described in real time reaction.
9. self-heating effect evaluation system according to claim 7, which is characterized in that the computing unit includes:
Storage unit, the preliminary expression formula of the voltage-temperature function for storing the booster diode
Wherein IdFor the predetermined current provided the booster diode, Vd is the voltage of first pole of booster diode,
T is the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are related to the booster diode self property
Constant, the preliminary expression formula is reduced to Vd=aT+b, a and b are constant；
Fitting unit, multiple groups temperature T for being obtained under the predetermined current in the step of heating the substrate and described
Booster diode the second pole tension Vd substitutes into the simplified preliminary expression formula, obtains the final of the voltage-temperature function
Expression formula, using the final expression formula as the voltage of temperature sensing device and the corresponding relationship of temperature.
10. self-heating effect evaluation system according to claim 1, which is characterized in that the booster diode can measure
The effective temperature arrived is within 800K.
11. a kind of self-heating effect evaluation method of ldmos transistor, the ldmos transistor is located on substrate, on the substrate
It is additionally provided with temperature sensing device, the ldmos transistor and temperature sensing device are adjacent, and the temperature sensing device can be
Temperature change is generated under the action of the ldmos transistor self-heating effect, which is characterized in that the evaluation method includes:
The substrate is heated, the temperature of temperature sensing device is increased, a predetermined current is applied to the temperature sensing device, is surveyed
Amount at different temperatures, the voltage value of the temperature sensing device, to obtain the voltage and temperature of the temperature sensing device
Corresponding relationship；
So that the ldmos transistor and temperature sensing device is restored room temperature, grid electricity is applied to the grid of the ldmos transistor
Pressure applies signal voltage to source electrode, and the ldmos transistor is made to work；
The predetermined current, the ldmos transistor described in the ldmos transistor course of work are applied to the temperature sensing device
Self-heating effect the temperature sensing device temperature is increased；
In temperature sensing device temperature elevation process, the voltage value of the temperature sensing device is measured, and be based on the voltage
The temperature that the temperature sensing device is obtained with the corresponding relationship of temperature, the Current Temperatures as the ldmos transistor；
Under each temperature value of ldmos transistor, change the signal voltage, and measures and flow through the ldmos transistor
Source-drain current value, the corresponding relationship of signal voltage and source-drain current value under each temperature value is obtained, in conjunction with multiple temperature values
Signal voltage and the corresponding relationship of source-drain current value obtain the signal voltage of the ldmos transistor, source-drain current value and temperature
Between relationship；
Wherein, the temperature sensing device is booster diode, and the booster diode includes the first pole and the second pole, described the
One pole ground connection, voltage value of second pole of booster diode under the predetermined current and temperature meet voltage-temperature function.
12. self-heating effect evaluation method according to claim 11, which is characterized in that
The step of providing predetermined current to the temperature sensing device includes: extremely to mention to the booster diode by described second
For the predetermined current；
The step of measuring the voltage value of the temperature sensing device includes: the voltage value for measuring second pole of booster diode.
13. self-heating effect evaluation method according to claim 12, which is characterized in that obtain the temperature sensing device
The step of electric current and the corresponding relationship of temperature includes: to obtain the temperature according to the voltage-temperature function of the booster diode
The voltage of sensing device and the corresponding relationship of temperature, the preliminary expression formula of the voltage-temperature function of the booster diodeWherein IdFor the default electricity provided the booster diode
Stream, Vd are the voltage of second pole of booster diode, and T is the temperature of the booster diode, and k is Boltzmann constant, n, A
It is constant relevant to the booster diode self property with Φ, the preliminary expression formula can simplify as Vd=aT+b；
By the predetermined current IdUnder obtained multiple groups temperature T and electric current IdBring simplified preliminary expression formula V intod=aT+b is obtained
Constant a and constant b obtains the final expression formula of the voltage-temperature function, using the final expression formula as temperature inductor
The voltage of part and the corresponding relationship of temperature.
14. self-heating effect evaluation method according to claim 11, which is characterized in that the step of heating substrate packet
It includes: making the substrate temperature in the range of 300 to 800K.
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| CN107797045B (en) * | 2017-09-13 | 2019-06-07 | 浙江大学 | A method of measuring transistor self-heating effect and the variation of channel mean temperature |
| CN109633400B (en) * | 2018-12-21 | 2020-10-09 | 无锡职业技术学院 | VDMOS vertical grid field effect transistor performance detection device |
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