EP1027463A4 - Metallartikel mit feinem gleichförmigem gefüge und textur und verfahren zu dessen herstellung - Google Patents

Metallartikel mit feinem gleichförmigem gefüge und textur und verfahren zu dessen herstellung

Info

Publication number
EP1027463A4
EP1027463A4 EP98931689A EP98931689A EP1027463A4 EP 1027463 A4 EP1027463 A4 EP 1027463A4 EP 98931689 A EP98931689 A EP 98931689A EP 98931689 A EP98931689 A EP 98931689A EP 1027463 A4 EP1027463 A4 EP 1027463A4
Authority
EP
European Patent Office
Prior art keywords
billet
forging
process according
rolling
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP98931689A
Other languages
English (en)
French (fr)
Other versions
EP1027463A1 (de
Inventor
Vladimir Segal
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Johnson Matthey Electronics Inc
Original Assignee
Johnson Matthey Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johnson Matthey Electronics Inc filed Critical Johnson Matthey Electronics Inc
Publication of EP1027463A1 publication Critical patent/EP1027463A1/de
Publication of EP1027463A4 publication Critical patent/EP1027463A4/de
Ceased legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21JFORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J3/00Lubricating during forging or pressing
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0221Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the working steps
    • C21D8/0236Cold rolling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/38Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B3/00Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21JFORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/02Hardening articles or materials formed by forging or rolling, with no further heating beyond that required for the formation
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/26Methods of annealing
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D8/00Modifying the physical properties by deformation combined with, or followed by, heat treatment
    • C21D8/02Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
    • C21D8/0247Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the heat treatment
    • C21D8/0273Final recrystallisation annealing
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C27/00Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02Alloys based on vanadium, niobium, or tantalum
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/10Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18High-melting or refractory metals or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18High-melting or refractory metals or alloys based thereon
    • C22F1/183High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Definitions

  • the invention relates to metal articles with fine uniform structures and textures and methods of making such articles.
  • metal articles of type described are especially useful as sputtering targets.
  • Sputtering targets of high purity metals and alloys are widely used in electronics and semiconductor industries for sputtering thin films. It is desirable to obtain large size targets.
  • the billet is forged at a temperature below the minimum temperature of static recrystallization and then rolled and annealed at a time and temperature to provide the beginning stage of static recrystallization.
  • the rolling reduction per pass is desirably in accordance with a relationship of the minimum reduction per pass, the roll diameter and the desire billet thickness after forging. Generally, the reduction per pass during rolling is about 10% to 20% per pass.
  • the invention comprises a metal article, such as a sputtering target, having a near-to-minimum of statically crystallized grain size, a difference in grain size at any location of less than about ⁇ 3% and a dispersion in orientation content ratio of texture of less than about ⁇ 4%.
  • the present invention can be applied to different metals and alloys that display good ductility and workability at temperatures below corresponding temperatures of static recrystallization.
  • metals with which the invention can be applied are Al, Ti, Ta, Cu, Nb, Ni, Mo, Au, Ag, Re, Pt and other metals, as well as their alloys.
  • One embodiment of the method comprises the steps of processing an ingot to a semi-finished billet, including, for example, melting, ingot casting, homogenizing/solutionizing heat treatment, hot working to break down the cast structure, and billet preparation followed by billet shaping and thermomechanical treatment to fabricate a product, for example a sputtering target, and refine the metallurgical structure and produce a desired texture.
  • cold/warm working and annealing are used to develop extremely fine, uniform structures and strong, uniform textures that result in improvement in performance of sputtering targets.
  • FIG. 1 is a billet-film lubricant assembly at the beginning of upsetting
  • FIG. 2 shows a sectional view "C" of FIG. 1 during upsetting
  • FIG. 3 shows the beginning of rolling for long cylindrical billets
  • FIG. 4 shows the beginning of rolling for short cylindrical billets
  • FIG. 5 is a graph relating grain size and temperature for recrystallized structures showing effect of recrystallization annealing on grain size of pure Ti alloy after frictionless forging/rolling
  • FIG. 6A is the microstructure of pure Ti after frictionless forging/rolling and annealing at 375 °C, 2 hours (x200 magnification);
  • FIG. 6B is the microstructure of pure Ti after frictionless forging/rolling and annealing at 675 °C, 2 hours (x200 magnification);
  • FIG. 7 A shows the dispersion in grain size of pure Ti after frictionless forging/rolling and annealing at 375 °C, 2 hours;
  • FIG. 7B shows the dispersion in grain size of pure Ti after frictionless forging/rolling and annealing at 675 °C, 2 hours.
  • FIG. 8 shows the effect of annealing temperature on texture (x-ray intensity ratios) of pure titanium after frictionless forging/rolling processing.
  • targets are thin discs fabricated from a single billet processed by rolling or upsetting-forging operations. In both cases, an original billet length
  • the original billet ratio (Mo) advantageously should be less than 1 , otherwise the end effect during rolling of long cylindrical billets develops very strong non-uniformity in strain distribution.
  • the roll diameter advantageously should be significantly larger than the billet thickness and the number of reductions per pass can influence the result. Because of the foregoing, rolled billets may have concave-like shapes with maximum strain at contact surfaces and minimum strains at the middle billet section that are not sufficient to optimize recrystallization and develop most useful structures.
  • Japan Patent No 08-269701 describes a titanium target manufactured by intensive cold rolling of sheet from stock and low temperature annealing. However, this technology cannot be applied to plates and although fine grain size is described for some target parts, the Japanese patent data shows large deviation in grain diameters.
  • the patent describes a combination of forging and rolling for titanium targets at temperatures below the temperature of phase transformation.
  • the process uses a temperature below the phase transformation temperature but well above the temperature of static recrystallization for heavy worked materials. As a result, the process cannot optimize recrystallization and develop very fine and uniform structures/textures.
  • the present invention includes:
  • the original billet (1) has a cylindrical shape and a volume and length- to-diameter ratio Mo.
  • Two shallow pockets (2) are fabricated at the billet ends before upsetting. Cold upsetting is preferable, but in some cases preheating of the billet and tool to a temperature below the temperature of static recrystallization may be used to reduce working pressure and load.
  • Two thin sheets of solid lubricant (3) are placed between the billet end and forging plate (4) mounted in a press. It has been found that best results are obtained with lubricant polymers that exhibit visco-elastic behavior at working conditions, such as polyethylene, polytetrafluroethylene or polyurethane. As can be seen in FIGS.
  • film thickness( ⁇ ) is varied from about O.5 mm to 2.5 mm while film size (A) should exceed Do.
  • Pocket depth ( ⁇ o) is advantageously slightly less than film thickness ( ⁇ ) and pocket borders (5) have a width "S" from about 5 mm to 20 mm.
  • visco-elastic polymer film is used to entirely separate the billet and tool.
  • the polymer fills the pockets and flows into contact with the billet.
  • Some excess of polymer flows out from the pockets (FIG. 2) and provides low positive friction in the flow direction along billet ends, thus eliminating "dead metal” zones and improving billet stability.
  • the preliminary forged billet is rolled for further reduction of thickness.
  • Cold or warm rolling may be used.
  • Rolling may be performed in two or four mutually perpendicular directions to produce a product with a circle-like shape. It is important to provide the most uniform strain distribution during rolling by controlling roll diameter-to-billet thickness ratios ( ⁇ /H), billet thickness-to-diameter ratio (M) and reductions per pass.
  • An important aspect is to prevent buckling along the free surface (2) of a cylindrical billet ⁇ ) at the beginning of rolling (FIG. 3). It has been found that buckling area (T) is approximately equal to a billet-roll contact length (L), and buckling is eliminated if contact length exceeds a billet thickness hi after the first pass (FIG. 4). In other words, if L>H, then
  • the roll diameter should be at least about 10 times (9.7 in Table 1) as large as the cylindrical billet thickness.
  • use of thin billets for rolling without upsetting reduces possible reductions (1).
  • Conventional target rolling suffer from both disadvantages, that is, non-uniform and low reductions are equally unacceptable to optimize structure.
  • high ratios of roll diameter- to-billet thickness ( ⁇ /H) are provided by preliminary billet upsetting to the necessary thickness (H).
  • the upsetting operation provides a pre-rolling billet ratio (m) of less than about 0.3 that is useful to attain uniform rolling reductions along a billet.
  • Partial rolling reductions from about 10% to 20% per pass are also useful for near uniform strain distribution in the final product. Rolling reductions lower than about 10% develop higher strains at billet surfaces while reduction more than about 18% develop higher strains at billet middle section. All these parameters define the best embodiments for performing upsetting and rolling for targets for optimum results.
  • the last step in target processing is recrystallization annealing.
  • strains from equation (3) are enough to optimize static recrystallization.
  • the lowest temperature necessary to start static recrystallization and then the shortest time necessary to complete that at all billet volume should be determined.
  • Corresponding structures have the minimum grain sizes and the lowest dispersions of grain diameters inside each local area.
  • the minimum temperature of static recrystallization may be realized as the optimal temperature for the whole billet at the shortest time. This results in very fine and uniform structures and strong, uniform texture for the target produced.
  • Another embodiment of the invention is preforming forging in a few steps with successive decrease a billet thickness and resumption of film lubricant at each step. That way forging may be prolonged to low billet thickness without distortion of frictionless conditions and strain uniformity under relative low pressure and load. If forging is continued to the final target thickness without rolling, corresponding forging textures are provided for targets. Similarly, in the special cases rolling may be performed without forging with near uniform strain distribution in accordance with the invention.
  • High purity titanium was cast into an ingot of 300 mm diameter and hot worked by swaging at a temperature of 800 C to a rod diameter of 130 mm. Billets of 162 mm length were then cut from the 130 mm rod. Pockets of 120 mm diameter and 1 mm thickness were machined at billet ends. Billets were upset at a temperature of 350°C to a thickness of 54 mm. Teflon films of 150 x 150 mm2 and thickness of 1.2 mm were used as lubricants for frictionless upsetting. Thereafter cold rolling with a roll diameter of 915 mm was performed in eight passes with partial reductions of 12% per pass along four directions under an angle of 45°.
  • Coupons across the thickness of the rolled billet were cut from central, mid-radius and external areas and annealed at different temperatures during 2 hours (h). Two planes of coupons, one year the surface and the second near the middle section, were investigated for structure and texture and photomicrographs thereof are shown in FIGS. 6 A and 6B.
  • tantalum sputtering targets were made by the process described above.
  • the composition of the resulting tantalum target is shown in Table 2, the target comprising 99.95% tantalum and balance as shown in the table.
  • FIG. 5 shows effect of annealing temperature on average grain size of titanium.
  • the lowest temperature of static recrystallization is about 375 °C.
  • Corresponding very fine structure of average grain sizes of 6 micrometers demonstrates also low local dispersion of grain diameter and strong texture (1013) (FIG. 8) with orientation content ratio of 65% in the perpendicular direction to target surface.
  • An increase of annealing temperature results in intensive grain growth and larger dispersion in grain size with only moderate strengthening of texture.
  • the photomicrographs shown in FIGS. 6 A and 6B show structures of pure Ti after frictionless forging/rolling and annealing at 375 ° C for 2 hours and annealing at 675 °C for 2 hours, respectively.
  • FIGS. 7A and 7B depict graphically the dispersion of grain size of pure Ti for the structures shown in FIGS. 6A and 6B, respectively.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Forging (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
EP98931689A 1997-07-11 1998-06-26 Metallartikel mit feinem gleichförmigem gefüge und textur und verfahren zu dessen herstellung Ceased EP1027463A4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US5221897P 1997-07-11 1997-07-11
US52218P 1997-07-11
US09/098,761 US6569270B2 (en) 1997-07-11 1998-06-17 Process for producing a metal article
US98761 1998-06-17
PCT/US1998/013447 WO1999002743A1 (en) 1997-07-11 1998-06-26 Metal article with fine uniform structures and textures and process of making same

Publications (2)

Publication Number Publication Date
EP1027463A1 EP1027463A1 (de) 2000-08-16
EP1027463A4 true EP1027463A4 (de) 2004-06-16

Family

ID=26730344

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98931689A Ceased EP1027463A4 (de) 1997-07-11 1998-06-26 Metallartikel mit feinem gleichförmigem gefüge und textur und verfahren zu dessen herstellung

Country Status (5)

Country Link
US (2) US6569270B2 (de)
EP (1) EP1027463A4 (de)
JP (1) JP2003532791A (de)
KR (1) KR100528090B1 (de)
WO (1) WO1999002743A1 (de)

Families Citing this family (102)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6858102B1 (en) 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
US6423161B1 (en) 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials
KR20020070443A (ko) 1999-11-24 2002-09-09 허니웰 인터내셔널 인코포레이티드 전도성 상호연결장치
US6451222B1 (en) 1999-12-16 2002-09-17 Honeywell International Inc. Ferroelectric composition, ferroelectric vapor deposition target and method of making a ferroelectric vapor deposition target
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US7517417B2 (en) 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US20010047838A1 (en) * 2000-03-28 2001-12-06 Segal Vladimir M. Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions
US6585870B1 (en) * 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
WO2001094660A2 (en) * 2000-06-02 2001-12-13 Honeywell International Inc. Sputtering target
US20030227068A1 (en) * 2001-05-31 2003-12-11 Jianxing Li Sputtering target
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
US6887356B2 (en) * 2000-11-27 2005-05-03 Cabot Corporation Hollow cathode target and methods of making same
IL156802A0 (en) * 2001-01-11 2004-02-08 Cabot Corp Tantalum and niobium billets and methods of producing same
US20020112789A1 (en) * 2001-02-20 2002-08-22 H.C. Starck, Inc. Refractory metal plates with uniform texture and methods of making the same
JP2004535933A (ja) * 2001-07-19 2004-12-02 ハネウェル・インターナショナル・インコーポレーテッド スパッタリング・ターゲット、スパッタ・リアクタ、鋳込成形インゴットを調製する方法および金属物品を調製する方法
US8562664B2 (en) * 2001-10-25 2013-10-22 Advanced Cardiovascular Systems, Inc. Manufacture of fine-grained material for use in medical devices
IL161701A0 (en) 2001-11-13 2004-09-27 Praxair Technology Inc High-purity aluminum sputter targets
AU2002241512A1 (en) * 2001-11-16 2003-06-10 Honeywell International Inc. Anodes for electroplating operations, and methods of forming materials over semiconductor substrates
EP1471164B1 (de) * 2002-01-30 2013-01-23 JX Nippon Mining & Metals Corporation Sputtertarget aus kupferlegierung und herstellungsverfahren dafür
US7416697B2 (en) 2002-06-14 2008-08-26 General Electric Company Method for preparing a metallic article having an other additive constituent, without any melting
KR100568392B1 (ko) * 2002-06-24 2006-04-05 가부시키가이샤 코베루코 카겐 은 합금 스퍼터링 타겟 및 그의 제조 방법
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
US7235143B2 (en) * 2002-08-08 2007-06-26 Praxair S.T. Technology, Inc. Controlled-grain-precious metal sputter targets
US20040123920A1 (en) * 2002-10-08 2004-07-01 Thomas Michael E. Homogenous solid solution alloys for sputter-deposited thin films
JP4794802B2 (ja) 2002-11-21 2011-10-19 Jx日鉱日石金属株式会社 銅合金スパッタリングターゲット及び半導体素子配線
US7897103B2 (en) * 2002-12-23 2011-03-01 General Electric Company Method for making and using a rod assembly
US6921470B2 (en) * 2003-02-13 2005-07-26 Cabot Corporation Method of forming metal blanks for sputtering targets
US20040186810A1 (en) * 2003-02-14 2004-09-23 Michaluk Christopher A. Method of supplying sputtering targets to fabricators and other users
US20060151072A1 (en) * 2003-04-23 2006-07-13 James Daily Molybdenum alloy x-ray targets having uniform grain structure
US20040221929A1 (en) 2003-05-09 2004-11-11 Hebda John J. Processing of titanium-aluminum-vanadium alloys and products made thereby
US7228722B2 (en) * 2003-06-09 2007-06-12 Cabot Corporation Method of forming sputtering articles by multidirectional deformation
US20040256226A1 (en) * 2003-06-20 2004-12-23 Wickersham Charles E. Method and design for sputter target attachment to a backing plate
JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ag系スパッタリングターゲット及びその製造方法
CN1839213A (zh) * 2003-08-21 2006-09-27 霍尼韦尔国际公司 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US20050252268A1 (en) * 2003-12-22 2005-11-17 Michaluk Christopher A High integrity sputtering target material and method for producing bulk quantities of same
CN1985021A (zh) * 2003-12-22 2007-06-20 卡伯特公司 高完整性溅射靶材以及其批量制造方法
KR101021488B1 (ko) * 2004-03-01 2011-03-16 Jx닛코 닛세끼 킨조쿠 가부시키가이샤 니켈-플라티늄 합금 및 동(同) 합금 타겟트
CN1957103A (zh) * 2004-03-26 2007-05-02 H.C.施塔克公司 难熔金属罐
US7837812B2 (en) 2004-05-21 2010-11-23 Ati Properties, Inc. Metastable beta-titanium alloys and methods of processing the same by direct aging
US20060213592A1 (en) * 2004-06-29 2006-09-28 Postech Foundation Nanocrystalline titanium alloy, and method and apparatus for manufacturing the same
US8088232B2 (en) * 2004-08-31 2012-01-03 H.C. Starck Inc. Molybdenum tubular sputtering targets with uniform grain size and texture
US20060042728A1 (en) 2004-08-31 2006-03-02 Brad Lemon Molybdenum sputtering targets
US7531021B2 (en) 2004-11-12 2009-05-12 General Electric Company Article having a dispersion of ultrafine titanium boride particles in a titanium-base matrix
US7998287B2 (en) 2005-02-10 2011-08-16 Cabot Corporation Tantalum sputtering target and method of fabrication
US20060201589A1 (en) * 2005-03-11 2006-09-14 Honeywell International Inc. Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components
US20080274369A1 (en) * 2005-04-21 2008-11-06 Lee Eal H Novel Ruthenium-Based Materials and Ruthenium Alloys, Their Use in Vapor Deposition or Atomic Layer Deposition and Films Produced Therefrom
US20060259126A1 (en) * 2005-05-05 2006-11-16 Jason Lenz Medical devices and methods of making the same
KR101466996B1 (ko) 2006-03-07 2014-12-01 캐보트 코포레이션 변형된 금속 물품을 제조하는 방법
US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
US9358000B2 (en) 2006-12-15 2016-06-07 Ethicon, Inc. Tungsten alloy suture needles
US20080300552A1 (en) 2007-06-01 2008-12-04 Cichocki Frank R Thermal forming of refractory alloy surgical needles
US8062437B2 (en) * 2007-06-01 2011-11-22 Ethicon, Inc. Thermal forming of refractory alloy surgical needles and fixture and apparatus
US8250895B2 (en) 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
WO2009020587A1 (en) * 2007-08-06 2009-02-12 H.C. Starck, Inc. Refractory metal plates with improved uniformity of texture
US8702919B2 (en) * 2007-08-13 2014-04-22 Honeywell International Inc. Target designs and related methods for coupled target assemblies, methods of production and uses thereof
JP5685201B2 (ja) 2009-01-22 2015-03-18 トーソー エスエムディー,インク. 一体構造のアルミニウム合金ターゲットとそれを製造する方法
US10053758B2 (en) * 2010-01-22 2018-08-21 Ati Properties Llc Production of high strength titanium
US8230899B2 (en) 2010-02-05 2012-07-31 Ati Properties, Inc. Systems and methods for forming and processing alloy ingots
US9267184B2 (en) 2010-02-05 2016-02-23 Ati Properties, Inc. Systems and methods for processing alloy ingots
KR101967945B1 (ko) * 2010-04-26 2019-04-10 제이엑스금속주식회사 Sb-Te기 합금 소결체 스퍼터링 타깃
KR101226483B1 (ko) * 2010-05-24 2013-01-25 국방과학연구소 균질하고 초미립의 미세조직을 갖는 구리 라이너 제조 방법
US10207312B2 (en) * 2010-06-14 2019-02-19 Ati Properties Llc Lubrication processes for enhanced forgeability
US9255316B2 (en) 2010-07-19 2016-02-09 Ati Properties, Inc. Processing of α+β titanium alloys
US8499605B2 (en) 2010-07-28 2013-08-06 Ati Properties, Inc. Hot stretch straightening of high strength α/β processed titanium
US8613818B2 (en) 2010-09-15 2013-12-24 Ati Properties, Inc. Processing routes for titanium and titanium alloys
US9206497B2 (en) 2010-09-15 2015-12-08 Ati Properties, Inc. Methods for processing titanium alloys
US10513755B2 (en) 2010-09-23 2019-12-24 Ati Properties Llc High strength alpha/beta titanium alloy fasteners and fastener stock
US8789254B2 (en) 2011-01-17 2014-07-29 Ati Properties, Inc. Modifying hot workability of metal alloys via surface coating
US8652400B2 (en) 2011-06-01 2014-02-18 Ati Properties, Inc. Thermo-mechanical processing of nickel-base alloys
JP5159962B1 (ja) 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
US9050647B2 (en) 2013-03-15 2015-06-09 Ati Properties, Inc. Split-pass open-die forging for hard-to-forge, strain-path sensitive titanium-base and nickel-base alloys
US9869003B2 (en) 2013-02-26 2018-01-16 Ati Properties Llc Methods for processing alloys
JP5905600B2 (ja) * 2013-03-04 2016-04-20 Jx金属株式会社 タンタルスパッタリングターゲット及びその製造方法
US9192981B2 (en) 2013-03-11 2015-11-24 Ati Properties, Inc. Thermomechanical processing of high strength non-magnetic corrosion resistant material
US9539636B2 (en) 2013-03-15 2017-01-10 Ati Properties Llc Articles, systems, and methods for forging alloys
US9027374B2 (en) 2013-03-15 2015-05-12 Ati Properties, Inc. Methods to improve hot workability of metal alloys
US9777361B2 (en) 2013-03-15 2017-10-03 Ati Properties Llc Thermomechanical processing of alpha-beta titanium alloys
KR101282229B1 (ko) * 2013-03-28 2013-07-09 국방과학연구소 성형작약탄용 몰리브데늄 라이너의 제조방법 및 그 제조방법에 의해 제조된 성형작약탄용 몰리브데늄 라이너
US11111552B2 (en) 2013-11-12 2021-09-07 Ati Properties Llc Methods for processing metal alloys
DE102013225187B4 (de) * 2013-12-06 2018-07-19 Heraeus Deutschland GmbH & Co. KG Verfahren zur Bearbeitung einer dispersionsgehärteten Platinzusammensetzung
US10011895B2 (en) 2014-05-06 2018-07-03 Gyrus Acmi, Inc. Assembly fabrication and modification of elasticity in materials
US10094003B2 (en) 2015-01-12 2018-10-09 Ati Properties Llc Titanium alloy
KR102622052B1 (ko) * 2015-08-03 2024-01-08 허니웰 인터내셔널 인코포레이티드 개선된 특성을 갖는 무마찰 단조 알루미늄 합금 스퍼터링 타겟
US10502252B2 (en) 2015-11-23 2019-12-10 Ati Properties Llc Processing of alpha-beta titanium alloys
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
ES2920513T3 (es) * 2017-04-21 2022-08-04 Oerlikon Surface Solutions Ag Pfaeffikon Capa de adhesión de PVD
US11062889B2 (en) 2017-06-26 2021-07-13 Tosoh Smd, Inc. Method of production of uniform metal plates and sputtering targets made thereby
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
JP7308013B2 (ja) * 2017-11-10 2023-07-13 Jx金属株式会社 タングステンスパッタリングターゲット及びその製造方法
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
WO2020066956A1 (ja) * 2018-09-26 2020-04-02 Jx金属株式会社 スパッタリングターゲット及びその製造方法
CN112084924B (zh) * 2020-09-02 2022-05-24 燕山大学 晶粒组织均匀性的评价方法、锻造成形工艺选择方法
CN112481565B (zh) * 2020-11-12 2021-10-26 贵州航宇科技发展股份有限公司 一种Waspaloy合金的锻造方法
CN113231465B (zh) * 2021-05-13 2022-05-13 太原理工大学 一种大尺寸Ni-Ni3Al-NiAl层状结构复合板的制备方法
CN116005085A (zh) * 2023-03-17 2023-04-25 内蒙金属材料研究所 一种用于含钪铝合金板材的大辊径板厚比的冷轧制备工艺

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0281141A1 (de) * 1987-03-06 1988-09-07 Kabushiki Kaisha Toshiba Zerstäubungstarget
JPS63244727A (ja) * 1987-03-31 1988-10-12 Nkk Corp スパツタリング用タ−ゲツトの製造方法
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
EP0653498A1 (de) * 1993-09-27 1995-05-17 Japan Energy Corporation Hochreine Titan-Aufstäube-Targets
US5798005A (en) * 1995-03-31 1998-08-25 Hitachi Metals, Ltd. Titanium target for sputtering and production method for same
WO1999066100A1 (en) * 1998-06-17 1999-12-23 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246361A1 (de) 1982-02-27 1983-09-08 Philips Patentverwaltung Gmbh, 2000 Hamburg Kohlenstoff enthaltende gleitschicht
JPS6066425A (ja) 1983-09-22 1985-04-16 Nippon Telegr & Teleph Corp <Ntt> Lsi電極用の高純度モリブデンタ−ゲツトならびに高純度モリブデンシリサイドタ−ゲツトおよびその製造方法
US4663130A (en) 1983-11-14 1987-05-05 Cabot Corporation Process for dissolving tantalum/columbium materials containing alkali metal impurities
US4663120A (en) 1985-04-15 1987-05-05 Gte Products Corporation Refractory metal silicide sputtering target
JPH0621346B2 (ja) 1986-06-11 1994-03-23 日本鉱業株式会社 高純度金属タンタル製ターゲットの製造方法
US4889745A (en) 1986-11-28 1989-12-26 Japan As Represented By Director General Of Agency Of Industrial Science And Technology Method for reactive preparation of a shaped body of inorganic compound of metal
US4762558A (en) 1987-05-15 1988-08-09 Rensselaer Polytechnic Institute Production of reactive sintered nickel aluminide material
US4960163A (en) * 1988-11-21 1990-10-02 Aluminum Company Of America Fine grain casting by mechanical stirring
FR2648404B1 (fr) 1989-06-14 1991-09-13 Faiveley Sa Pantographe a coussin d'air
US5468401A (en) 1989-06-16 1995-11-21 Chem-Trend, Incorporated Carrier-free metalworking lubricant and method of making and using same
US5074907A (en) 1989-08-16 1991-12-24 General Electric Company Method for developing enhanced texture in titanium alloys, and articles made thereby
DE69117868T2 (de) 1990-05-15 1996-07-25 Toshiba Kawasaki Kk Zerstäubungstarget und dessen herstellung
KR930701633A (ko) 1990-07-03 1993-06-12 챨스 이. 위커샴 2세 컴팩트 디스크 코팅을 위한 개량된 스퍼터 타게트와 그 사용 방법 및 타게트의 제조방법
EP0535314A1 (de) 1991-08-30 1993-04-07 Mitsubishi Materials Corporation Zerstäubungstarget aus einer Platin-Kobalt-Legierung und Verfahren zu dessen Herstellung
US5231306A (en) 1992-01-31 1993-07-27 Micron Technology, Inc. Titanium/aluminum/nitrogen material for semiconductor devices
JPH05214523A (ja) 1992-02-05 1993-08-24 Toshiba Corp スパッタリングターゲットおよびその製造方法
US5330701A (en) 1992-02-28 1994-07-19 Xform, Inc. Process for making finely divided intermetallic
JP3338476B2 (ja) 1992-06-29 2002-10-28 住友チタニウム株式会社 スパッタリング用の金属Tiターゲットの製造方法
JPH0693400A (ja) 1992-09-16 1994-04-05 Nkk Corp チタン製電着ドラムの製造方法
TW234767B (de) 1992-09-29 1994-11-21 Nippon En Kk
US5693203A (en) 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JPH06256919A (ja) 1993-03-01 1994-09-13 Seiko Instr Inc チタン合金の加工方法
JPH06264232A (ja) 1993-03-12 1994-09-20 Nikko Kinzoku Kk Ta製スパッタリングタ−ゲットとその製造方法
US5400633A (en) 1993-09-03 1995-03-28 The Texas A&M University System Apparatus and method for deformation processing of metals, ceramics, plastics and other materials
US5513512A (en) 1994-06-17 1996-05-07 Segal; Vladimir Plastic deformation of crystalline materials
JP3506782B2 (ja) 1994-11-24 2004-03-15 オリンパス株式会社 光学薄膜の製造方法
US5590389A (en) 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JP2984778B2 (ja) 1995-02-27 1999-11-29 株式会社住友シチックス尼崎 高純度チタン材の鍛造方法
US5600989A (en) 1995-06-14 1997-02-11 Segal; Vladimir Method of and apparatus for processing tungsten heavy alloys for kinetic energy penetrators
US5673581A (en) 1995-10-03 1997-10-07 Segal; Vladimir Method and apparatus for forming thin parts of large length and width
JP3713332B2 (ja) 1996-06-21 2005-11-09 同和鉱業株式会社 単結晶銅ターゲット及びその製造方法
US5766380A (en) 1996-11-05 1998-06-16 Sony Corporation Method for fabricating randomly oriented aluminum alloy sputtering targets with fine grains and fine precipitates
JPH10158829A (ja) 1996-12-04 1998-06-16 Sony Corp スパッタリングターゲット組立体の製造方法
JP3867328B2 (ja) 1996-12-04 2007-01-10 ソニー株式会社 スパッタリングターゲット及びその製造方法
US5993621A (en) 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
US6001227A (en) 1997-11-26 1999-12-14 Applied Materials, Inc. Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target
US6193821B1 (en) 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
US6348113B1 (en) 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US6423161B1 (en) 1999-10-15 2002-07-23 Honeywell International Inc. High purity aluminum materials

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0281141A1 (de) * 1987-03-06 1988-09-07 Kabushiki Kaisha Toshiba Zerstäubungstarget
JPS63244727A (ja) * 1987-03-31 1988-10-12 Nkk Corp スパツタリング用タ−ゲツトの製造方法
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
EP0653498A1 (de) * 1993-09-27 1995-05-17 Japan Energy Corporation Hochreine Titan-Aufstäube-Targets
US5798005A (en) * 1995-03-31 1998-08-25 Hitachi Metals, Ltd. Titanium target for sputtering and production method for same
WO1999066100A1 (en) * 1998-06-17 1999-12-23 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 051 (E - 712) 6 February 1989 (1989-02-06) *
See also references of WO9902743A1 *

Also Published As

Publication number Publication date
JP2003532791A (ja) 2003-11-05
KR100528090B1 (ko) 2005-11-15
US20010001401A1 (en) 2001-05-24
WO1999002743A1 (en) 1999-01-21
US6238494B1 (en) 2001-05-29
KR20010021652A (ko) 2001-03-15
EP1027463A1 (de) 2000-08-16
US6569270B2 (en) 2003-05-27

Similar Documents

Publication Publication Date Title
US6569270B2 (en) Process for producing a metal article
US6348139B1 (en) Tantalum-comprising articles
EP1751324B1 (de) Sputtertargets und verfahren zu ihrer herstellung durch rotary axial forging
US7708845B2 (en) Method for manufacturing thin sheets of high strength titanium alloys description
CN101155650A (zh) 溅射靶及制造方法
KR20110106787A (ko) 모놀리식 알루미늄 합금 타겟 및 그 제조방법
US6210502B1 (en) Processing method for high-pure titanium
US7228722B2 (en) Method of forming sputtering articles by multidirectional deformation
US6589371B1 (en) Method of processing titanium metal alloys
USH1659H (en) Method for heat treating titanium aluminide alloys
CN113718110B (zh) 一种采用累积能量控制板材组织的高品质铌板的制备方法
WO2001094660A2 (en) Sputtering target
TW397722B (en) Metal article with fine uniform structures and textures and process of making same
JPH10277614A (ja) 金属帯板のエッジドロップ低減方法
Gerhardt et al. Influence of Hot Working on the Properties of the Ti 6A1 4V Alloy with Special Regard to Heavy Sections
SCHMIEDEWERKE et al. INFLUENCE OF HOT WORKING ON THE PROPERTIES OF THE

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20000112

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE GB SE

A4 Supplementary search report drawn up and despatched

Effective date: 20040506

RIC1 Information provided on ipc code assigned before grant

Ipc: 7C 22F 1/00 B

Ipc: 7C 23C 14/34 A

REG Reference to a national code

Ref country code: NL

Ref legal event code: ZD

Free format text: PATENT BULLETIN NO. 2, ISSUED 20050201, HEADING PD, SECTION 5, PAGE 305, PATENT NUMBER 1027463; THE NAME OF THE PROPRIETOR "CERALEC TECHNICAL CERAMICS B.V." SHOULD BE MODIFIED INTO: CERATEC TECHNICAL CERAMICS B.V.

Ref country code: NL

Ref legal event code: ZD

Free format text: PATENT BULLETIN NO. 2, ISSUED 20050201, HEADING PD, SECTION 3, PAGE 294, PATENT NUMBER 1027463, INT. CL. F16C 17/22: THE NAME OF THE PROPRIETOR OF THE PATENT "CERALEC TECHNICAL CERAMICS B.V." SHOULD BE MODIFIED INTO: CERATEC TECHNICAL CERAMICS B.V.

17Q First examination report despatched

Effective date: 20050302

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20061109