EP0386085A1 - Mosfet in silicon carbide - Google Patents
Mosfet in silicon carbideInfo
- Publication number
- EP0386085A1 EP0386085A1 EP19880909938 EP88909938A EP0386085A1 EP 0386085 A1 EP0386085 A1 EP 0386085A1 EP 19880909938 EP19880909938 EP 19880909938 EP 88909938 A EP88909938 A EP 88909938A EP 0386085 A1 EP0386085 A1 EP 0386085A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- drain
- silicon carbide
- source
- doped
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 53
- 230000005669 field effect Effects 0.000 claims abstract description 32
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 26
- 239000010410 layer Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 238000002513 implantation Methods 0.000 claims description 12
- 239000002344 surface layer Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910021332 silicide Inorganic materials 0.000 claims description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 abstract description 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 150000004706 metal oxides Chemical class 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000008186 active pharmaceutical agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 240000001492 Carallia brachiata Species 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 238000001835 Lely method Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- MANYRMJQFFSZKJ-UHFFFAOYSA-N bis($l^{2}-silanylidene)tantalum Chemical compound [Si]=[Ta]=[Si] MANYRMJQFFSZKJ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Definitions
- MOSFET IN SILICON CARBIDE Field of the Invention relates to metal oxide semiconductor field effect transistors (MOSFETs) , and in particular to such transistors formed in silicon carbide.
- MOSFET metal-oxide-semiconductor field-effect transistor
- MISFET metal-insulator- semiconductor field-effect transistor
- a field effect transistor differs somewhat from a junction transistor.
- Junction transistors which historically were the first developed, are formed when two p-n junctions are placed in close proximity with one another and share a small portion of the semiconductor material known as the base.
- a junction transistor controls the flow of current from a portion of semiconductor material adjacent from a portion of semiconductor material adjacent one of the junctions (the collector) through the base and then to and out from the semiconductor portion adjacent the other junction (the emitter) by controlling the applied voltage on the base.
- a field effect transistor works on a somewhat different principle.
- current enters a field effect transistor through a region of semiconductor material known as the source, and exits the semiconductor material from another region of semiconductor material known as the drain.
- the source and drain are separated from each other by yet another region of semiconductor material which is known as the gate.
- an appropriate voltage of either positive or negative bias (depending upon the type of transistor) is applied to the active region through the gate, current can be controlled.
- the semiconductor material in the gate is an n-type material through which current would normally flow, applying a negative bias to the gate depletes electrons from the active region, making the conducting channel smaller and thereby hindering the flow of electrons from the source to the drain.
- Such a device is referred to as a depletion mode MOSFET.
- the semiconductor material in the gate is a p-type material which is normally nonconductive, applying a positive bias voltage to the gate depletes holes from the region, making it more conductive from the resulting excess of electron carriers.
- an insulator material is positioned between these respective portions. Because silicon is presently the semiconductor material most commonly used in MOSFETs, the insulating portion most commonly is formed from silicon dioxide.
- MOSFET has gained wide acceptance as an appropriate device since its introduction. As is the with all other semiconductor devices, however, some of the characteristics of a MOSFET will be limited by the characteristics of the semiconductor material from which it is formed. Because silicon has some inherent limitations for certain applications, corresponding MOSFETs formed from silicon will also have inherent limitations. Accordingly, it has long been recognized that one method of improving the performance of devices is to attempt to form them on materials having superior characteristics.
- One such material having a number of superior characteristics is silicon carbide (SiC) . Silicon carbide has some excellent semiconductor properties: a wide bandgap, a high thermal conductivity, a high melting point, a high breakdown electric field strength and a high saturated electron drift velocity.
- the wide bandgap gives silicon carbide advantages over semiconductor materials with narrower bandgaps. Additionally, its high thermal conductivity and better temperature stability mean that devices made from silicon carbide can be packed more closely together without risk of destroying each other from dissipated heat energy, and devices made from silicon carbide can operate at significantly higher temperatures than can those devices made from narrower bandgap semiconductors. Accordingly, a number of attempts have been made to form devices, and specifically MOSFETs, on silicon carbide. Silicon carbide is, however, a successful production of crystalline silicon carbide of an appropriate chemical purity and low defect level has remained a somewhat elusive goal, and the growth of single crystal thin films and large crystals have heretofore been difficult to accomplish.
- 2,918,396 also discusses a method of forming a junction type transistor in silicon carbide in which the primary technique suggested by the disclosure is that of placing an alloy formed of silicon along with an "activator" (dopant) on the surface of a single crystal of silicon carbide, raising the silicon carbide to a temperature below its melting point but sufficient to cause the alloy to melt and dissolve a surface portion of the silicon carbide. When the materials are cooled, a p-n junction hopefully results. According to Hall, appropriate crystals can be prepared using the Lely technique. As is known to those familiar with silicon carbide technology, however, the Lely process represents an unseeded sublimation technique which has generally failed to overcome the inherent difficulties in producing device quality single crystals of silicon carbide.
- MOSFET metal-oxide-semiconductor field-effect transistor
- Figure 6 is a cross-sectional view of an n-channel depletion mode metal-insulator- semiconductor field-effect transistor according to the present invention.
- Figure 7 is a plot of drain current versus drain voltage at a temperature of 296K for an n-channel depletion mode MOSFET according to the present invention.
- Figure 8 is another plot of drain current versus drain voltage at a temperature of 573K for the same MOSFET as Figure 7 according to the present invention.
- Figure 9 is yet another plot of drain current versus drain voltage at a temperature of 923K for the same MOSFET as Figures 7 and 8 according to the present invention. Summary of the Invention
- the invention is a method of forming a metal-oxide-semiconductor field-effect transistor suitable for operation at temperatures of at least 650° centigrade, and at high radiation densities and at high power levels.
- the method comprises oxidizing a silicon carbide substrate having a first conductivity type to form a silicon dioxide surface layer, then selectively applying gate contact material to the silicon dioxide surface layer.
- a doped source and a doped drain of a desired conductivity type are formed by high temperature implantation of doping ions, following which source and drain contacts are applied.
- depletion mode n-channel metal-oxide-semiconductor field-effect transistors were fabricated on n-type beta silicon carbide (111) thin films epitaxially grown by chemical vapor deposition on the (0001) face of 6H alpha silicon carbide single crystals.
- the gate oxide was thermally grown on the silicon carbide, the source and drain were doped n + by nitrogen ion implantation at 823K. Stable saturation and subthreshold current was achieved at drain voltages (V DS ) exceeding 25 volts. Transconductances as high as 11.9 mS/mm were achieved. Stable transistor action was observed at temperatures as high as 923K, the highest temperature reported to date for a transistor in any material.
- Figures 1-5 show some of the steps used in forming an n-channel inversion mode MOSFET according to the present invention and its resulting * structure.
- Figure 5 is a cross-sectional view of the finished device which has a concentric ring structure which will be described further herein.
- the source is indicated at 10 and is n-type.
- the drain is indicated at 11 and is also n-type, both formed by high temperature implantation in a p-type silicon carbide substrate 12.
- the gate is indicated at 13.
- the insulating layer of silicon dioxide is indicated at 14, the source contacts at 15, and the drain contacts at 16, with both source and drain contacts being formed of tantalum silicide (TaSi 2 ) , which is a novel use of this material.
- TaSi 2 tantalum silicide
- the gate 13 has a gate contact 17 formed of polysilicon.
- the concentric gate ring had a 20 micrometer (um) wide connecting strip which extended to a 100 um X 100 um contact pad.
- the source contact 15 is an outer concentric semicircle that surrounds the gate ring 13 and the gate contact except for the gate's connection strip.
- the source ring also has a connecting strip to the 100 micrometer diameter contact pad 15.
- Figure 1 illustrates some of the initial steps in forming a MOSFET according to the present invention.
- the silicon dioxide layer 14 is added through normal oxidation procedures to the p-type substrate of silicon carbide 12.
- a layer of phosphorous doped polysilicon 17 is deposited over the oxide layer 14.
- a photoresist material 20 is applied and patterned as shown. After the exposed polysilicon is etched away and the photoresist removed, the substrate 12 and oxide layer 14 have the appearance shown in Figure 2 in which the only remaining polysilicon is that which will form the gate contacts 17. Nitrogen is added by high temperature ion implantation (823K) through the oxide layer 14 into the p-type silicon carbide 12 to form n-type wells for the source 10 and the drain 11.
- Figure 6 shows a depletion mode MOSFET formed according to the present invention.
- a p-type alpha silicon carbide substrate is shown at 21 which carries a p-type beta silicon carbide layer 22 and an n-type beta silicon carbide layer 23.
- a more heavily n-doped source 24 and drain 25 are also illustrated along with the gate 26, Figure 6 being a cross-sectional view as discussed earlier.
- source and drain contacts 27 and 30 are formed of tantalum silicide while the gate contacts 31 are formed of polysilicon and are superimposed on the oxide layer 32.
- the silicon carbide films were first polished using 0.1 um diamond paste, oxidized to remove polishing damage and etched in hydrofluoric acid (HF) to remove the oxide film.
- the gate oxide was subsequently grown, preceded by a three-step cleaning process using hot sulfuric acid (H 2 S0 4 ) for five minutes, a one-to-one mixture of hot ammonium hydroxide (NH 4 OH) and hydrogen peroxide (H 2 0 2 ) for five minutes, and HF for one minute, followed by a rinse with deionized water.
- a 500 nm thick film of polysilicon was deposited on the prepared oxide via low pressure chemical vapor deposition at 893K which was degenerately doped by phosphorous (P) diffusion a. 1173K for five minutes, then patterned as shown ⁇ n the drawings to form the gate contacts.
- n-type doped source and drain areas were then formed by high temperature ion implantation of nitrogen through the oxide.
- the implantation was carried out at 773K, 70 keV at a dosage of 5.0 X 10 1 cm "2 .
- Figure 7 shows the drain current versus drain voltage characteristics measured at a temperature of 296K for a MOSFET formed according to the present invention in beta silicon carbide.
- the particular device upon which the measurements were made had a gate length of 7.2 um and a gate width of 390 um, with a source to drain contact distance of 24 um.
- this device showed very stable drain current saturation out to a drain source voltage of 25 volts.
- This trend actually continued to a source drain voltage of 30 volts at which point the oxides began to break down. Accordingly, this is the first time stable saturation has been reported for drain source voltages of greater than 5 volts for any field effect transistor formed in beta silicon carbide. 5
- the threshold voltage was a gate voltage
- V G V G -12.9 V, as determined from a plot of the square root of the drain-source current versus V G .
- Figure 8 is another plot of drain current versus drain voltage for the same device, but with
- Figure 9 is yet another plot of drain current versus drain voltage for the same device, 5 but measured at a temperature of 923K.
- the transconductance decreased with this further increase in temperature.
- the lower transconductance of the device as measured in Figure 9 at 923K is demonstrated by the lower current at a zero gate 0 voltage as compared with Figure 7 and Figure 8.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
La présente invention se rapporte à un transistor à effet de champ de type MOS (semiconducteur à grille isolée par oxyde métallique) formé dans du carbure de silicium (12). La source dopée (10) et le drain dopé (11) sont formés par implantation ionique à haute température d'ions dopants dans le carbure de silicium (12).The present invention relates to a field effect transistor of MOS type (metal oxide insulated gate semiconductor) formed in silicon carbide (12). The doped source (10) and the doped drain (11) are formed by ion implantation at high temperature of doping ions in the silicon carbide (12).
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11356487A | 1987-10-26 | 1987-10-26 | |
US113564 | 1987-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0386085A1 true EP0386085A1 (en) | 1990-09-12 |
EP0386085A4 EP0386085A4 (en) | 1990-11-28 |
Family
ID=22350162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19880909938 Withdrawn EP0386085A4 (en) | 1987-10-26 | 1988-10-26 | Mosfet in silicon carbide |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0386085A4 (en) |
JP (1) | JP2644028B2 (en) |
KR (1) | KR0137966B1 (en) |
CA (1) | CA1313571C (en) |
WO (1) | WO1989004056A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
US6344663B1 (en) | 1992-06-05 | 2002-02-05 | Cree, Inc. | Silicon carbide CMOS devices |
JP3146694B2 (en) * | 1992-11-12 | 2001-03-19 | 富士電機株式会社 | Silicon carbide MOSFET and method of manufacturing silicon carbide MOSFET |
US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
US5448081A (en) * | 1993-02-22 | 1995-09-05 | Texas Instruments Incorporated | Lateral power MOSFET structure using silicon carbide |
FR2707425A1 (en) * | 1993-07-09 | 1995-01-13 | Thomson Csf | Structure of semiconductor material, application to the production of a transistor and method of production |
US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
US5719409A (en) * | 1996-06-06 | 1998-02-17 | Cree Research, Inc. | Silicon carbide metal-insulator semiconductor field effect transistor |
DE19712561C1 (en) * | 1997-03-25 | 1998-04-30 | Siemens Ag | Silicon carbide semiconductor device e.g. lateral or vertical MOSFET |
US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
JP5098295B2 (en) | 2006-10-30 | 2012-12-12 | 株式会社デンソー | Method for manufacturing silicon carbide semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446961A1 (en) * | 1983-12-23 | 1985-07-18 | Sharp K.K., Osaka | METHOD FOR PRODUCING A SIC SEMICONDUCTOR DEVICE |
US4757028A (en) * | 1985-10-07 | 1988-07-12 | Agency Of Industrial Science And Technology | Process for preparing a silicon carbide device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1073110B (en) * | 1957-08-16 | 1960-01-14 | General Electric Company, Schenectady, N Y (V St A) | Process for the production of rectifying or ohmic connection contacts on silicon carbide bodies |
US3254280A (en) * | 1963-05-29 | 1966-05-31 | Westinghouse Electric Corp | Silicon carbide unipolar transistor |
US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
US3662458A (en) * | 1969-06-20 | 1972-05-16 | Westinghouse Electric Corp | Electrical contact for silicon carbide members |
US4032961A (en) * | 1974-10-16 | 1977-06-28 | General Electric Company | Gate modulated bipolar transistor |
US3975648A (en) * | 1975-06-16 | 1976-08-17 | Hewlett-Packard Company | Flat-band voltage reference |
US4028149A (en) * | 1976-06-30 | 1977-06-07 | Ibm Corporation | Process for forming monocrystalline silicon carbide on silicon substrates |
US4582561A (en) * | 1979-01-25 | 1986-04-15 | Sharp Kabushiki Kaisha | Method for making a silicon carbide substrate |
JPS567479A (en) * | 1979-06-29 | 1981-01-26 | Toshiba Corp | Field-effect type semiconductor device |
DE3208638A1 (en) * | 1982-03-10 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | SILICON CARBIDE LUMINESCENCE DIODE |
JPS62136077A (en) * | 1985-12-10 | 1987-06-19 | Nec Corp | Semiconductor device |
-
1988
- 1988-10-25 CA CA000581146A patent/CA1313571C/en not_active Expired - Lifetime
- 1988-10-26 EP EP19880909938 patent/EP0386085A4/en not_active Withdrawn
- 1988-10-26 JP JP63509172A patent/JP2644028B2/en not_active Expired - Lifetime
- 1988-10-26 WO PCT/US1988/003793 patent/WO1989004056A1/en not_active Application Discontinuation
-
1989
- 1989-06-26 KR KR89701157A patent/KR0137966B1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3446961A1 (en) * | 1983-12-23 | 1985-07-18 | Sharp K.K., Osaka | METHOD FOR PRODUCING A SIC SEMICONDUCTOR DEVICE |
US4757028A (en) * | 1985-10-07 | 1988-07-12 | Agency Of Industrial Science And Technology | Process for preparing a silicon carbide device |
Non-Patent Citations (8)
Title |
---|
APPLIED PHYSICS LETTERS, vol. 49, no. 17, 27th October 1986, pages 1074-1076, American Institute of Physics; H.S. KONG et al.: "Epitaxial growth of beta-SiC thin films on 6H alpha-SiC substrates via chemical vapor deposition" * |
APPLIED PHYSICS LETTERS, vol. 51, no. 6, 10th August 1987, pages 442-444, American Institute of Physics, New York, US; H.S. KONG et al.: "Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type beta-SiC grown via chemical vapor deposition" * |
I.E.E.E. ELECTRON DEVICE LETTERS, vol. EDL-8, no. 2, February 1987, pages 48-49, IEEE, New York, US; K. FURUKAWA et al.: "Insulated-gate and junction-gate FET's of CVD-grown beta-SiC" * |
IEEE ELECTRON DEVICE LETTERS, vol. EDL-7, no. 12, December 1986, pages 692-693, IEEE, New York, US; K. SHIBAHARA et al.: "Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si(100)" * |
JAPANESE JOURNAL OF APPLIED PHYSICS/PART 1: REGULAR PAPERS & SHORT NOTES, vol. 26, no. 2, February 1987, pages 310-311, Tokyo, JP; Y. KONDO et al.: "High-temperature operation of silicon carbide MOSFET" * |
JOURNAL OF APPLIED PHYSICS, vol. 64, no. 4, 15th August 1988, pages 2168-2177, American Institute of Physics, Woodbury, NY, US; J.W. PALMOUR et al.: "Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in beta-SiC thin films" * |
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 3, March 1986, pages 650-652, Manchester, NH, US; J.A. EDMOND et al.: "Chemical etching of ion implanted amorphous silicon carbide" * |
See also references of WO8904056A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR0137966B1 (en) | 1998-06-01 |
JP2644028B2 (en) | 1997-08-25 |
KR890702245A (en) | 1989-12-23 |
WO1989004056A1 (en) | 1989-05-05 |
JPH03501670A (en) | 1991-04-11 |
EP0386085A4 (en) | 1990-11-28 |
CA1313571C (en) | 1993-02-09 |
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