EP0361212A2 - Circuit de protection pour un transistor de commutation - Google Patents

Circuit de protection pour un transistor de commutation Download PDF

Info

Publication number
EP0361212A2
EP0361212A2 EP89116977A EP89116977A EP0361212A2 EP 0361212 A2 EP0361212 A2 EP 0361212A2 EP 89116977 A EP89116977 A EP 89116977A EP 89116977 A EP89116977 A EP 89116977A EP 0361212 A2 EP0361212 A2 EP 0361212A2
Authority
EP
European Patent Office
Prior art keywords
switching transistor
emitter
collector
circuit
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89116977A
Other languages
German (de)
English (en)
Other versions
EP0361212A3 (en
EP0361212B1 (fr
Inventor
Harald Dipl.-Ing. Hügel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to AT89116977T priority Critical patent/ATE98826T1/de
Publication of EP0361212A2 publication Critical patent/EP0361212A2/fr
Publication of EP0361212A3 publication Critical patent/EP0361212A3/de
Application granted granted Critical
Publication of EP0361212B1 publication Critical patent/EP0361212B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches

Definitions

  • the invention relates to a protective circuit for a switching transistor with a switch-off device for a control signal of the switching transistor, the switch-off device being controlled by a collector-emitter monitoring system monitoring the switching transistor.
  • a protective circuit for a switching transistor with a switch-off device for control pulses of the switching transistor is known, the switch-off device being controlled by a comparator which compares a voltage at the switching transistor with a reference voltage and switches off the drive pulses when the switching transistor is overloaded.
  • the switching transistor is monitored for desaturation, i.e. it is checked whether a collector-emitter voltage exceeds the value which occurs when the transistor is saturated. The switching transistor can thus be protected against short circuit and overload.
  • the voltage applied to the collector-emitter path of the switching transistor is compared in a comparator with a reference voltage corresponding to the saturation value, and the drive pulses are switched off when the collector-emitter voltage of the switching transistor exceeds the saturation value.
  • a circuit arrangement with a short-circuit-proof output wherein a diode circuit forming the current limiting stage of the output transistor is electrically connected in parallel to the series circuit of the base-emitter path of the output transistor and its emitter resistor.
  • the diode circuit comprises a zener diode and the emitter-base path of a transistor. This transistor controls a monostable multivibrator. As soon as a short circuit occurs in the load, the current flowing over the emitter-collector path of the output transistor and the voltage drop of the emitter-base path of the output transistor increase.
  • the diode circuit When the threshold value set by the zener diode is exceeded, the diode circuit becomes conductive, the monostable multivibrator is controlled in its quasi-stable state and the output transistor is switched into its blocking state. The diode circuit remains conductive until the monostable multivibrator has flipped back into its stable state. With this circuit arrangement, one can only limit the current of the output transistor in the event of a short circuit. In addition, due to the comparative means, the protective circuit only responds after a response delay.
  • the invention is based on the object of designing a protective circuit of the type mentioned at the outset without a response delay, the switching transistor also being protected when switching to an existing short circuit.
  • a timing element is arranged on the input side, at the input of which the drive signal is present, that a series circuit comprising a zener diode and a switch is electrically connected in parallel to the base-emitter path of the switching transistor and that the output of the timing element on the one hand with a control output the collector-emitter monitoring and on the other hand is linked to the switch.
  • the base-emitter path of the switching transistor is provided with a Zener diode which can be switched off, the switch-off taking place after a predetermined delay time at the earliest, the switching transistor is also protected when a short circuit is present.
  • the delay time depends on the switching transistor used, since the delay time indicates the time span in which the collector-emitter voltage reaches the low static value from the time of switching on. Only when the switching transistor has reached this operating point is the collector-emitter monitoring activated and the Zener diode switched off from the base-emitter path of the switching transistor.
  • the switch switches to its rest position, i.e. the switch is closed and the collector-emitter monitoring is no longer activated.
  • the base current and thereby the collector current or an existing short-circuit current are limited by the Zener diode during the delay time.
  • the timer only opens the switch after the delay time has elapsed after the collector-emitter monitoring has been activated. This ensures that the switching transistor is protected even when it is connected to an existing short circuit.
  • a switching transistor 2 is connected on the collector side to a supply voltage source + U V.
  • This switching transistor 2 can be one of the two switching transistors of a bridge arm of a converter, the emitter E being connected to a collector of the switching transistor connected downstream, which is not shown for reasons of clarity.
  • a voltage of an intermediate circuit can also be provided as the supply voltage + U V. If the switching transistor 2 is one of, for example, six switching transistors of a converter, a load, which is not shown for reasons of clarity, can be connected to the collector C or to the emitter E of the switching transistor 2.
  • the collector C of the switching transistor 2 is linked to a collector-emitter monitoring 6 via a decoupling diode 4, the anode of the decoupling diode 4 being connected to a supply voltage + U B via a resistor 8.
  • the base B of the switching transistor 2 is supplied with control pulses U BL via a symbolically illustrated switch-off device 10, with which switch-on pulses for the switching transistor 2 can be interrupted or short-circuited in the event of a fault.
  • This shutdown device 10 is controlled by the collector-emitter monitoring 6.
  • the control signal U BL is fed to a protective circuit 12.
  • This protection circuit 12 contains a timing element 14, a Zener diode 16 and an off switch 18. The timing element 14 is connected downstream of an input 20 of this protection circuit 12.
  • a timer 14 can In the simplest case, a monoflop and a plurality of diodes electrically connected in series can also be provided as the Zener diode 16.
  • the output of this timer 14 is linked on the one hand via a control output 22 to the collector-emitter monitoring 6 and on the other hand to the switch 18.
  • This switch 18 and the Zener diode 16 are electrically connected in series, this series connection being electrically connected in parallel to the base-emitter path of the switching transistor 2.
  • the switch 18 is designed so that when no control signal U BL is present, the switch 18 is in its rest position, ie the switch 18 is closed.
  • a comparator can be provided as collector-emitter monitoring 6, which compares the collector-emitter voltage U CE of the switching transistor 2 with a reference voltage, a signal being present at the output as soon as this collector-emitter voltage U CE of the Switching transistor 2 is greater than this reference voltage.
  • FIG. 2 shows the control signal U BL in a diagram over the time t.
  • 3 shows the circuit diagram of the switch 18, this circuit diagram being shown in a diagram over the time t.
  • FIG. 4 also shows the output signal U BLZ of the timing element 14, this output signal U BLZ being shown in a diagram over the time t.
  • the control signal U BL is present at the base B of the switching transistor 2 and at the input 20 of the protective circuit 12.
  • no output signal U BLZ appears at the output of the timing element 14, as a result of which the switch 18 remains in its rest position, ie it is closed.
  • the base-emitter path of the switching transistor 2 is bridged by the series connection of the Zener diode 16 and the switch 18.
  • the switching transistor 2 is driven by the control signal U BL , as a result of which a collector current flows. Is the Switching transistor 2 has been switched to an existing short circuit, the collector current is limited by means of the Zener diode 16.
  • an output signal U BLZ appears at the output of the timer 14, whereby the collector-emitter monitoring 6 is activated and the switch 18 is opened.
  • the time difference t2 - t1 is such that the collector-emitter voltage U CE has dropped to its low static value after switching on. This time difference depends on the switching transistor 2 used, this time span being of the order of 15 to 30 microseconds. lies.
  • the switch 18 After the time difference t2 - t1 on the one hand the switch 18 is kept in the off state and on the other hand the collector-emitter monitoring 6 is kept active as long as the control signal U BL is in the high state at the base of the switching transistor 2 and at the input 20 of the protective circuit 12 located.
  • the level of the control signal U BL goes from the high state to the low state, the signal U BLZ also changing to the low state at the output of the timing element 14. Because the signal U BLZ is no longer present at the output of the timing element 14, the switch 18 jumps back to its rest position, ie the Zener diode 16 is again connected in parallel to the base-emitter path of the switching transistor 2.
  • the switching transistor 2 is thus protected by the Zener diode 16 outside the activation time of the collector-emitter monitoring 6.
  • the base-emitter voltage U BE of this switching transistor 2 is limited by this Zener diode 16, as a result of which the drive current flows from the base into the Zener diode 16 in the event of a short circuit as soon as the base-emitter voltage U BE reaches the value of the Zener Tension has reached.
  • the switching transistor 2 is driven weakly in the event of a short circuit, as a result of which the short circuit current or the collector current is limited.
  • Zener diode 16 Since the Zener diode 16 is switched off as soon as the collector-emitter voltage U CE of the controlled switching transistor 2 has reached its nominal value, no part of the base current can flow away via the Zener diode 16. This enhances the natural reinforcement of the Switching transistor 2 is not reduced. At the nominal operating point, the switching transistor 2 is protected against overload by means of the collector-emitter monitoring 6.

Landscapes

  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Dc-Dc Converters (AREA)
EP89116977A 1988-09-28 1989-09-13 Circuit de protection pour un transistor de commutation Expired - Lifetime EP0361212B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AT89116977T ATE98826T1 (de) 1988-09-28 1989-09-13 Schutzschaltung fuer einen schalttransistor.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3832918 1988-09-28
DE3832918 1988-09-28

Publications (3)

Publication Number Publication Date
EP0361212A2 true EP0361212A2 (fr) 1990-04-04
EP0361212A3 EP0361212A3 (en) 1990-09-26
EP0361212B1 EP0361212B1 (fr) 1993-12-15

Family

ID=6363888

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89116977A Expired - Lifetime EP0361212B1 (fr) 1988-09-28 1989-09-13 Circuit de protection pour un transistor de commutation

Country Status (3)

Country Link
EP (1) EP0361212B1 (fr)
AT (1) ATE98826T1 (fr)
DE (1) DE58906431D1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093836B2 (en) 2011-02-07 2015-07-28 Infineon Technologies Austria Ag Method for controlling a transistor and control circuit
CN105359413A (zh) * 2013-07-05 2016-02-24 恩德莱斯和豪瑟尔两合公司 用于保护两线电流环路的至少一个部件的电路布置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112098739B (zh) * 2020-05-27 2024-02-23 深圳天邦达科技有限公司 电池包短路保护测试电路、电路板和测试设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2555509A1 (de) * 1975-12-10 1977-06-16 Vdo Schindling Schaltungsanordnung mit einem kurzschlussfesten ausgang
EP0095579A1 (fr) * 1982-05-05 1983-12-07 Siemens Aktiengesellschaft Circuit de protection pour un transistor de commutation
DE3504200A1 (de) * 1985-02-07 1986-08-07 Siemens AG, 1000 Berlin und 8000 München Kurzschlussueberwachung fuer schaltregler

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2555509A1 (de) * 1975-12-10 1977-06-16 Vdo Schindling Schaltungsanordnung mit einem kurzschlussfesten ausgang
EP0095579A1 (fr) * 1982-05-05 1983-12-07 Siemens Aktiengesellschaft Circuit de protection pour un transistor de commutation
DE3504200A1 (de) * 1985-02-07 1986-08-07 Siemens AG, 1000 Berlin und 8000 München Kurzschlussueberwachung fuer schaltregler

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELEKTRONIK *
ELEKTRONIK Heft 15, 1980, Seiten 45-49, DE; K.Rischmueller: "Pulsgesteuerte Treiberstufen für Brückenschaltungen" *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9093836B2 (en) 2011-02-07 2015-07-28 Infineon Technologies Austria Ag Method for controlling a transistor and control circuit
CN105359413A (zh) * 2013-07-05 2016-02-24 恩德莱斯和豪瑟尔两合公司 用于保护两线电流环路的至少一个部件的电路布置
CN105359413B (zh) * 2013-07-05 2018-08-24 恩德莱斯和豪瑟尔欧洲两合公司 用于保护两线电流环路的至少一个部件的电路装置

Also Published As

Publication number Publication date
EP0361212A3 (en) 1990-09-26
EP0361212B1 (fr) 1993-12-15
DE58906431D1 (de) 1994-01-27
ATE98826T1 (de) 1994-01-15

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