EP0231473B1 - Dispositif de couplage d'ondes d'un guide d'ondes à un composant semi-conducteur - Google Patents

Dispositif de couplage d'ondes d'un guide d'ondes à un composant semi-conducteur Download PDF

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Publication number
EP0231473B1
EP0231473B1 EP86116758A EP86116758A EP0231473B1 EP 0231473 B1 EP0231473 B1 EP 0231473B1 EP 86116758 A EP86116758 A EP 86116758A EP 86116758 A EP86116758 A EP 86116758A EP 0231473 B1 EP0231473 B1 EP 0231473B1
Authority
EP
European Patent Office
Prior art keywords
waveguide
coupling
waveguides
semiconductor element
semiconductor component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP86116758A
Other languages
German (de)
English (en)
Other versions
EP0231473A3 (en
EP0231473A2 (fr
Inventor
Michael Dipl.-Ing. Alberty
Walter Dipl.-Ing. Gross
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bosch Telecom GmbH
Original Assignee
ANT Nachrichtentechnik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ANT Nachrichtentechnik GmbH filed Critical ANT Nachrichtentechnik GmbH
Publication of EP0231473A2 publication Critical patent/EP0231473A2/fr
Publication of EP0231473A3 publication Critical patent/EP0231473A3/de
Application granted granted Critical
Publication of EP0231473B1 publication Critical patent/EP0231473B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
    • H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
    • H01P5/103—Hollow-waveguide/coaxial-line transitions

Definitions

  • the present invention relates to an arrangement for coupling waveguide waves to a semiconductor component, the semiconductor component being inserted into a coupling opening in a partition between two waveguides, both of which are short-circuited at one end and run parallel to one another at least over a partial length, and one in each waveguide coupling probe contacted with the semiconductor component protrudes.
  • US-A-2 433 074 and DE-B-1 028 639 disclose that a coupling probe projects into or out of a waveguide for coupling in or out radio-frequency energy.
  • the waveguide is short-circuited and the coupling probes are arranged at a suitable distance in front of the short-circuit wall.
  • the invention is based on the object of specifying an arrangement of the type mentioned in the introduction, which has the smallest possible overall length.
  • the input waveguide 1 shows a longitudinal section through a microwave circuit, for example an amplifier, oscillator, mixer or the like, with a waveguide input and a waveguide output.
  • the input waveguide 1 is coupled to the output waveguide 2 via a coupling opening 4 let into the common side wall 3.
  • the coupling opening 4 is at a distance of approximately ⁇ / 16- ⁇ / 4 both from the short-circuit plane 5 of the input waveguide 1 and from the short-circuit plane 6 of the output waveguide 2.
  • the active semiconductor component 7 (e.g. diode, FET) of the microwave circuit is inserted into the coupling opening 4 between the two waveguides 1 and 2 and is in ground contact with the waveguide wall 3.
  • a first connection arm 8 of the semiconductor component 7 projects into the input waveguide 1 and couples the wave of the input signal there.
  • a second connection arm 9 of the semiconductor component protrudes into the output waveguide 2 and couples to it the waves of the semiconductor component e.g. amplified or frequency multiplied signal.
  • the connecting arms 8 and 9 of the semiconductor component 7 serving as coupling probes are approximately 0.3-0.8 times the narrow side of the waveguide (i.e. approximately 0.15-0.35 cm at an operating frequency of 20 GHz). Because only very short coupling probes are required here, the thin and not very stable connecting arms can freely project into the waveguide 1, 2 without having to support them.
  • the connecting arms 8 and 9 of the semiconductor component 7 are supplied with direct voltages by coaxial bushings 10 and 11 in the walls of the waveguides 1 and 2.
  • the direct voltage is fed to the connection arm of the semiconductor component via a thin wire 12 which runs through the waveguide perpendicular to the E field. This type of direct voltage supply ensures that the Waveguide field is disturbed as little as possible and the damping of the coupling is relatively low.
  • the coupling between the waveguides and the semiconductor component can be adjusted in a simple manner by means of tuning screws 13, 14 and 15, 16, which project through the waveguide walls opposite the coupling opening 4 in the vicinity of the coupling probes 8 and 9 into the waveguides 1 and 2 .
  • FIGS. 3 and 4 The arrangement shown in FIGS. 3 and 4 is identical to the arrangement described above according to FIGS. 1 and 2 except for the mounting of the semiconductor component and the design of the coupling probes. 3 and 4, the same reference numerals are used as in FIGS. 1 and 2.
  • a semiconductor component 7 which is not housed in a housing is placed on a dielectric carrier plate 17.
  • the carrier plate 17 On one side, the carrier plate 17 is provided with two conductor tracks 18 and 19 which are approximately 0.3-0.8 times the waveguide narrow side and run in opposite directions, with which two connection contacts of the semiconductor component 7 are connected by means of bonding wires.
  • the carrier plate 17 has two further conductive surfaces 20 with which the semiconductor component is ground-contacted.
  • This dielectric carrier plate 17, which is occupied by the semiconductor component 7, is installed in the coupling opening 4 in such a way that its conductive surfaces 20 are contacted with the waveguide wall 3 and its conductor tracks 18 and 19 protrude into the waveguides 1 and 2 as coupling probes.

Landscapes

  • Microwave Amplifiers (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Claims (5)

  1. Dispositif de couplage des ondes entre un guide d'ondes et un composant semiconducteur (7), où le composant semiconducteur (7) est monté dans une ouverture de couplage (4) ménagée dans la paroi séparatrice (3) entre deux guides d'ondes (1, 2) qui sont tous deux court-circuités à une de leurs extrémités et qui sont disposés parallèlenent l'un à l'autre sur au moins une partie de leur longueur, et où une sonde de couplage (18, 19) reliée au composant semiconducteur (7) est en saillie dans chacun des guides d'ondes, caractérisé en ce que le composant semiconducteur (7) est monté sur une plaquette support diélectrique (17), en ce que la plaquette support diélectrique (17) porte sur une face deux pistes conductrices (18, 19) orientées dans des directions opposées qui sont raccordées aux contacts de raccordement du composant semiconducteur (7), en ce que la plaquette support diélectrique (17) possède au moins une surface conductrice (20) grâce à laquelle le composant semiconducteur (7) est en contact avec la masse et en ce que la plaquette support diélectrique (17) est insérée dans l'ouverture de couplage (4) de manière à ce que sa surface conductrice (20) soit en contact avec la paroi séparatrice entre les guides d'ondes (3) et à ce que les pistes conductrices (18, 19) soient en saillie dans les deux guides d'ondes (1, 2) et y servent de sondes de couplage.
  2. Dispositif selon la revendication 1, caractérisé en ce que l'ouverture de couplage (4) est à une distance de λ/16 à λ/4 (où λ ≈ longueur d'onde du guide d'ondes) en avant des plans de court-circuit (5, 6) des deux guides d'ondes (1, 2) et est ménagée dans leur paroi séparatrice commune (3).
  3. Dispositif selon la revendication 1, caractérisé en ce que les pistes conductrices (18, 19) servant de sondes de couplage et disposées sur la plaquette support diélectrique (17) ont une longueur comprise entre 0,3 et 0,8 fois le petit côté des guides d'ondes.
  4. Dispositif selon la revendication 3, caractérisé en ce que des goujons d'accord (13, 14, 15, 16) montés dans les parois latérales des deux guides d'ondes (1, 2) opposées à l'ouverture de couplage (4) forment saillie au niveau des sondes de couplage (18, 19).
  5. Dispositif selon la revendication 1, caractérisé en ce que les sondes de couplage (18, 19) sont reliées à des fils (12) conduisant une tension continue et disposés perpendiculairement au champ électrique dans les guides d'ondes (1, 2).
EP86116758A 1986-02-05 1986-12-02 Dispositif de couplage d'ondes d'un guide d'ondes à un composant semi-conducteur Expired - Lifetime EP0231473B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3603454 1986-02-05
DE19863603454 DE3603454A1 (de) 1986-02-05 1986-02-05 Anordnung zum ankoppeln von hohlleiterwellen an ein halbleiterbauelement

Publications (3)

Publication Number Publication Date
EP0231473A2 EP0231473A2 (fr) 1987-08-12
EP0231473A3 EP0231473A3 (en) 1988-09-14
EP0231473B1 true EP0231473B1 (fr) 1992-06-17

Family

ID=6293380

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86116758A Expired - Lifetime EP0231473B1 (fr) 1986-02-05 1986-12-02 Dispositif de couplage d'ondes d'un guide d'ondes à un composant semi-conducteur

Country Status (4)

Country Link
US (1) US4734667A (fr)
EP (1) EP0231473B1 (fr)
CA (1) CA1263457A (fr)
DE (2) DE3603454A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182631A (en) * 1988-04-15 1993-01-26 Nippon Telegraph And Telephone Corporation Film carrier for RF IC
DE10010713B4 (de) * 2000-03-04 2008-08-28 Endress + Hauser Gmbh + Co. Kg Füllstandmeßgerät zum Aussenden und Empfangen breitbandiger hochfrequenter Signale

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2433074A (en) * 1943-07-02 1947-12-23 Raytheon Mfg Co High-frequency coupling device
DE1028639B (de) * 1956-10-11 1958-04-24 Siemens Ag Einseitig kurzgeschlossener Hohlleiter-abschnitt, der mit einer Vorrichtung zum Anschluss einer Koaxialleitung versehen ist
US3092711A (en) * 1958-09-08 1963-06-04 Bennett Manufacture of honeycomb core
US3017585A (en) * 1959-04-24 1962-01-16 Research Corp Microwave switch
US3239744A (en) * 1965-04-16 1966-03-08 Gen Electronic Lab Inc Frequency multiplier
US3379956A (en) * 1966-08-26 1968-04-23 Navy Usa Floating diode harmonic multiplier

Also Published As

Publication number Publication date
DE3685745D1 (de) 1992-07-23
CA1263457A (fr) 1989-11-28
US4734667A (en) 1988-03-29
DE3603454A1 (de) 1987-08-06
EP0231473A3 (en) 1988-09-14
EP0231473A2 (fr) 1987-08-12

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