EP0217601A2 - Cellule de mémoire - Google Patents

Cellule de mémoire Download PDF

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Publication number
EP0217601A2
EP0217601A2 EP86307201A EP86307201A EP0217601A2 EP 0217601 A2 EP0217601 A2 EP 0217601A2 EP 86307201 A EP86307201 A EP 86307201A EP 86307201 A EP86307201 A EP 86307201A EP 0217601 A2 EP0217601 A2 EP 0217601A2
Authority
EP
European Patent Office
Prior art keywords
transistor
channel
source
drain
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP86307201A
Other languages
German (de)
English (en)
Other versions
EP0217601B1 (fr
EP0217601A3 (en
Inventor
Hung-Cheng Hsieh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xilinx Inc
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of EP0217601A2 publication Critical patent/EP0217601A2/fr
Publication of EP0217601A3 publication Critical patent/EP0217601A3/en
Application granted granted Critical
Publication of EP0217601B1 publication Critical patent/EP0217601B1/fr
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Definitions

  • Transistor N 2 has a channel length of 4 microns and a channel width of 4 microns .
  • R(N 2 )/(R(N 2 )+R(N 3 )) equals 0.6.
  • V TRIG INV 1
  • the output signal on node B goes low and the output signal of inverter INV 2 goes high, driving sense node A to the V CC level.
  • V TRIG V TRIG (INV 1 ) during read
  • the address supply voltage source can be implemented as shown in Fi g . 3.
  • Address supply circuit 90 shown in Fig. 3 includes P channel enhancement mode transistor TA 1 , N channel enhancement mode transistor TA 2 , N channel enhancement mode transistor TA 4 , and P channel enhancement mode transistor TA 3 .
  • source 30 of transistor TA 1 is connected to the positive voltage supply V CC .
  • Drain 31 of transistor TA 1 is connected to drain 33 of transistor TA 2 whose source 34 is connected to drain 36 of transistor TA 4 whose source 37 is connected to ground.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
EP86307201A 1985-09-19 1986-09-18 Cellule de mémoire Expired EP0217601B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/777,670 US4750155A (en) 1985-09-19 1985-09-19 5-Transistor memory cell which can be reliably read and written
US777670 1991-10-15

Publications (3)

Publication Number Publication Date
EP0217601A2 true EP0217601A2 (fr) 1987-04-08
EP0217601A3 EP0217601A3 (en) 1990-05-02
EP0217601B1 EP0217601B1 (fr) 1992-09-02

Family

ID=25110921

Family Applications (1)

Application Number Title Priority Date Filing Date
EP86307201A Expired EP0217601B1 (fr) 1985-09-19 1986-09-18 Cellule de mémoire

Country Status (5)

Country Link
US (2) US4750155A (fr)
EP (1) EP0217601B1 (fr)
JP (1) JPS62117192A (fr)
CA (1) CA1260140A (fr)
DE (1) DE3686626T2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0344894A2 (fr) * 1988-06-02 1989-12-06 Xilinx, Inc. Cellule de mémoire
EP0345623A2 (fr) * 1988-06-08 1989-12-13 Siemens Aktiengesellschaft Dispositif de commutation pour signaux à large bande

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JPH0810556B2 (ja) * 1986-04-17 1996-01-31 株式会社日立製作所 半導体メモリ回路
EP0276854B1 (fr) * 1987-01-28 1993-10-20 Nec Corporation Dispositif de mémoire à semi-conducteurs avec un schéma de sélection de colonnes
JPH01224999A (ja) * 1988-03-04 1989-09-07 Mitsubishi Electric Corp 半導体記憶装置
JPH02218096A (ja) * 1989-02-17 1990-08-30 Sharp Corp 半導体メモリの行選択回路
JPH0654873B2 (ja) * 1989-09-04 1994-07-20 株式会社東芝 プログラマブル型論理装置
US5322812A (en) * 1991-03-20 1994-06-21 Crosspoint Solutions, Inc. Improved method of fabricating antifuses in an integrated circuit device and resulting structure
US5289415A (en) * 1992-04-17 1994-02-22 Motorola, Inc. Sense amplifier and latching circuit for an SRAM
US5301147A (en) * 1993-01-08 1994-04-05 Aptix Corporation Static random access memory cell with single logic-high voltage level bit-line and address-line drivers
US5264741A (en) * 1992-06-19 1993-11-23 Aptix Corporation Low current, fast, CMOS static pullup circuit for static random-access memories
ATE184728T1 (de) * 1992-07-02 1999-10-15 Atmel Corp Unterbrechungsfreies, wahlfreies zugriffspeichersystem.
US5781756A (en) * 1994-04-01 1998-07-14 Xilinx, Inc. Programmable logic device with partially configurable memory cells and a method for configuration
US5430687A (en) * 1994-04-01 1995-07-04 Xilinx, Inc. Programmable logic device including a parallel input device for loading memory cells
US5453706A (en) * 1994-04-01 1995-09-26 Xilinx, Inc. Field programmable gate array providing contention free configuration and reconfiguration
US5682107A (en) * 1994-04-01 1997-10-28 Xilinx, Inc. FPGA architecture with repeatable tiles including routing matrices and logic matrices
US5550843A (en) * 1994-04-01 1996-08-27 Xilinx, Inc. Programmable scan chain testing structure and method
US5504439A (en) * 1994-04-01 1996-04-02 Xilinx, Inc. I/O interface cell for use with optional pad
US5450022A (en) * 1994-10-07 1995-09-12 Xilinx Inc. Structure and method for configuration of a field programmable gate array
US5847577A (en) * 1995-02-24 1998-12-08 Xilinx, Inc. DRAM memory cell for programmable logic devices
US5581198A (en) * 1995-02-24 1996-12-03 Xilinx, Inc. Shadow DRAM for programmable logic devices
US5808942A (en) * 1995-06-09 1998-09-15 Advanced Micro Devices, Inc. Field programmable gate array (FPGA) having an improved configuration memory and look up table
US5701441A (en) * 1995-08-18 1997-12-23 Xilinx, Inc. Computer-implemented method of optimizing a design in a time multiplexed programmable logic device
US5838954A (en) * 1995-08-18 1998-11-17 Xilinx, Inc. Computer-implemented method of optimizing a time multiplexed programmable logic device
US5761483A (en) * 1995-08-18 1998-06-02 Xilinx, Inc. Optimizing and operating a time multiplexed programmable logic device
US5583450A (en) * 1995-08-18 1996-12-10 Xilinx, Inc. Sequencer for a time multiplexed programmable logic device
US5629637A (en) * 1995-08-18 1997-05-13 Xilinx, Inc. Method of time multiplexing a programmable logic device
US5784313A (en) * 1995-08-18 1998-07-21 Xilinx, Inc. Programmable logic device including configuration data or user data memory slices
US5646545A (en) * 1995-08-18 1997-07-08 Xilinx, Inc. Time multiplexed programmable logic device
US5600263A (en) * 1995-08-18 1997-02-04 Xilinx, Inc. Configuration modes for a time multiplexed programmable logic device
US5870327A (en) * 1996-07-19 1999-02-09 Xilinx, Inc. Mixed mode RAM/ROM cell using antifuses
US5821772A (en) * 1996-08-07 1998-10-13 Xilinx, Inc. Programmable address decoder for programmable logic device
US5793671A (en) * 1997-01-21 1998-08-11 Advanced Micro Devices, Inc. Static random access memory cell utilizing enhancement mode N-channel transistors as load elements
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell
US6204689B1 (en) 1997-02-26 2001-03-20 Xilinx, Inc. Input/output interconnect circuit for FPGAs
US5889411A (en) * 1997-02-26 1999-03-30 Xilinx, Inc. FPGA having logic element carry chains capable of generating wide XOR functions
US6201410B1 (en) 1997-02-26 2001-03-13 Xilinx, Inc. Wide logic gate implemented in an FPGA configurable logic element
US5942913A (en) * 1997-03-20 1999-08-24 Xilinx, Inc. FPGA repeatable interconnect structure with bidirectional and unidirectional interconnect lines
US5920202A (en) * 1997-02-26 1999-07-06 Xilinx, Inc. Configurable logic element with ability to evaluate five and six input functions
US5914616A (en) * 1997-02-26 1999-06-22 Xilinx, Inc. FPGA repeatable interconnect structure with hierarchical interconnect lines
US5963050A (en) 1997-02-26 1999-10-05 Xilinx, Inc. Configurable logic element with fast feedback paths
US6185126B1 (en) 1997-03-03 2001-02-06 Cypress Semiconductor Corporation Self-initializing RAM-based programmable device
US6047115A (en) * 1997-05-29 2000-04-04 Xilinx, Inc. Method for configuring FPGA memory planes for virtual hardware computation
US6421817B1 (en) 1997-05-29 2002-07-16 Xilinx, Inc. System and method of computation in a programmable logic device using virtual instructions
US5923582A (en) * 1997-06-03 1999-07-13 Cypress Semiconductor Corp. SRAM with ROM functionality
US5986958A (en) * 1998-01-30 1999-11-16 Xilinx, Inc. DRAM configuration in PLDs
US6011740A (en) * 1998-03-04 2000-01-04 Xilinx, Inc. Structure and method for providing additional configuration memories on an FPGA
US6137307A (en) * 1998-08-04 2000-10-24 Xilinx, Inc. Structure and method for loading wide frames of data from a narrow input bus
US6069489A (en) 1998-08-04 2000-05-30 Xilinx, Inc. FPGA having fast configuration memory data readback
US6097210A (en) * 1998-08-04 2000-08-01 Xilinx, Inc. Multiplexer array with shifted input traces
US6205049B1 (en) 1999-08-26 2001-03-20 Integrated Device Technology, Inc. Five-transistor SRAM cell
US6529040B1 (en) 2000-05-05 2003-03-04 Xilinx, Inc. FPGA lookup table with speed read decoder
US6373279B1 (en) 2000-05-05 2002-04-16 Xilinx, Inc. FPGA lookup table with dual ended writes for ram and shift register modes
US6445209B1 (en) 2000-05-05 2002-09-03 Xilinx, Inc. FPGA lookup table with NOR gate write decoder and high speed read decoder
US6937063B1 (en) 2000-09-02 2005-08-30 Actel Corporation Method and apparatus of memory clearing with monitoring RAM memory cells in a field programmable gated array
US6476636B1 (en) 2000-09-02 2002-11-05 Actel Corporation Tileable field-programmable gate array architecture
GB2384092A (en) * 2002-01-14 2003-07-16 Zarlink Semiconductor Ab Low power static random access memory
US6842039B1 (en) 2002-10-21 2005-01-11 Altera Corporation Configuration shift register
US6815998B1 (en) 2002-10-22 2004-11-09 Xilinx, Inc. Adjustable-ratio global read-back voltage generator
US7639736B2 (en) * 2004-05-21 2009-12-29 Rambus Inc. Adaptive receive-side equalization
US6972987B1 (en) * 2004-05-27 2005-12-06 Altera Corporation Techniques for reducing power consumption in memory cells
US7257017B2 (en) * 2004-05-28 2007-08-14 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM cell for soft-error rate reduction and cell stability improvement
US7274242B2 (en) * 2004-11-02 2007-09-25 Rambus Inc. Pass transistors with minimized capacitive loading
US7271623B2 (en) * 2004-12-17 2007-09-18 Rambus Inc. Low-power receiver equalization in a clocked sense amplifier
US7307873B2 (en) * 2006-02-21 2007-12-11 M2000 Sa. Memory with five-transistor bit cells and associated control circuit
US7742336B2 (en) * 2006-11-01 2010-06-22 Gumbo Logic, Inc. Trap-charge non-volatile switch connector for programmable logic
CN101595699A (zh) 2007-01-08 2009-12-02 拉姆伯斯公司 用于校准第一后体isi的自适应连续时间均衡器
US7948791B1 (en) * 2009-01-15 2011-05-24 Xilinx, Inc. Memory array and method of implementing a memory array
US8503221B1 (en) 2011-06-02 2013-08-06 Richard Frederic Hobson SRAM cell with common bit line and source line standby voltage
US8659970B2 (en) * 2012-03-16 2014-02-25 Micron Technology, Inc. Memory device power control
US9202554B2 (en) 2014-03-13 2015-12-01 International Business Machines Corporation Methods and circuits for generating physically unclonable function
US10566050B1 (en) 2018-03-21 2020-02-18 Xilinx, Inc. Selectively disconnecting a memory cell from a power supply

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US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array

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US4156940A (en) * 1978-03-27 1979-05-29 Rca Corporation Memory array with bias voltage generator
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0344894A2 (fr) * 1988-06-02 1989-12-06 Xilinx, Inc. Cellule de mémoire
EP0344894A3 (fr) * 1988-06-02 1992-04-08 Xilinx, Inc. Cellule de mémoire
EP0345623A2 (fr) * 1988-06-08 1989-12-13 Siemens Aktiengesellschaft Dispositif de commutation pour signaux à large bande
EP0345623A3 (en) * 1988-06-08 1990-05-23 Siemens Aktiengesellschaft Switching device for broad-band signals

Also Published As

Publication number Publication date
US4750155A (en) 1988-06-07
US5148390A (en) 1992-09-15
EP0217601B1 (fr) 1992-09-02
DE3686626T2 (de) 1993-01-28
JPS62117192A (ja) 1987-05-28
CA1260140A (fr) 1989-09-26
EP0217601A3 (en) 1990-05-02
JPH048878B2 (fr) 1992-02-18
DE3686626D1 (de) 1992-10-08

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