EP0208315B1 - Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers - Google Patents
Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers Download PDFInfo
- Publication number
- EP0208315B1 EP0208315B1 EP86109420A EP86109420A EP0208315B1 EP 0208315 B1 EP0208315 B1 EP 0208315B1 EP 86109420 A EP86109420 A EP 86109420A EP 86109420 A EP86109420 A EP 86109420A EP 0208315 B1 EP0208315 B1 EP 0208315B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- openings
- workpiece
- plastic
- disc
- carrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000003754 machining Methods 0.000 title claims description 8
- 239000004033 plastic Substances 0.000 claims description 18
- 229920003023 plastic Polymers 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- -1 polyethylene Polymers 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 6
- 239000010959 steel Substances 0.000 claims description 6
- 239000000725 suspension Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 3
- 239000004800 polyvinyl chloride Substances 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 2
- 229920000573 polyethylene Polymers 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
Definitions
- the invention relates to a method for two-sided abrasive machining of disc-shaped workpieces, in particular semiconductor wafers, in which the workpieces, v .. 'I's is loaded than the workpiece having carrier disk in the openings staggered by engaging at its outer periphery drive unit in rotation, lesser thickness , with the addition of an abrasive suspension, are subjected to a circular movement between flat structures moving over their top and bottom sides.
- Carrier washers are used, which are either entirely made of metal, e.g. Sheet steel, are made or consist entirely of plastic.
- the metal carrier disks are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks can no longer be used. Such problems do not occur with the carrier disks made of plastic. However, the service life is short, since in particular the outer circumference of the carrier disks can withstand the mechanical loads caused by the drive unit, e.g. a planetary gear that cannot withstand long.
- carrier disks made of hard material are described, in the at least one opening of which workpiece holders made of softer material are inserted, which in turn have an opening for receiving the workpieces.
- the workpiece holders are free in the openings.
- the object of the invention was to provide a further method which permits treatment on both sides, such as lapping or polishing of disk-shaped workpieces, with little mechanical stress on the workpiece edge and at the same time a long service life of the carrier disks used.
- carrier disks which consist of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings and which have openings for receiving the workpiece or workpieces to be machined at least the outer circumference of the carrier disks is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area that comes into contact with the outer circumference of the workpiece, a plastic with a modulus of elasticity of 1.0 to 8x104 N / mm 2 is provided.
- This process can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material such as semiconductor wafers made of e.g. silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as e.g. Gallium gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as Glass can be applied.
- crystalline material such as semiconductor wafers made of e.g. silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as e.g. Gallium gadolinium garnet.
- oxidic material such as e.g. Gallium gadolinium garnet.
- Suitable materials are those which have sufficient mechanical stability in relation to the mechanical stresses caused by the drive, especially tensile and compressive loads.
- Suitable materials such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2.
- care must be taken to ensure that the material selected is erosive from the one used acting suspension, that is, as a rule, attacked as little as possible by the polishing or lapping agent in order to increase the service life of the carrier disks and to largely exclude contamination of the workpieces to be machined.
- the use of plastics with sufficient tensile strength for example some types of bakelite or fiber-reinforced materials, is not excluded.
- plastics that come into contact with the outer circumference of the workpiece materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process.
- plastics with a modulus of elasticity of 1.0 to 8.10 4 N / mm2 are therefore suitable, in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene.
- influences on the mechanical stability resulting from the geometry of the area of the carrier disk consisting of plastic are also to be taken into account.
- Carrier disks suitable for carrying out the method according to the invention which typically have a thickness of approximately 150-850 11 m, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways. Both the metal and the plastic parts of these carrier disks can be inexpensively punched out in the desired shape Produce metal, preferably steel sheets and plastic, preferably polyvinyl chloride films of the appropriate thickness.
- a possible embodiment which can advantageously also be used for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which are provided with openings for receiving the workpiece or workpieces to be machined.
- the fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate.
- Another possibility is to first open the openings of the base plate e.g. after the injection molding process with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate.
- these openings can also have a polygonal, for example prismatic, square or hexagonal cross section.
- the principle applies that it is advisable to leave a margin for the inserted workpiece. In general it has e.g. Proven for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.
- carrier disks described here by way of example can be used without problems in conventional machines for double-sided polishing or lapping, the usual conditions familiar to the person skilled in the art, e.g. as far as the abrasive suspension used, temperature, processing pressure and the like are concerned, can be maintained or adjusted. If necessary, the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components. However, thickness differences of up to ⁇ 5% of the total thickness can usually be tolerated.
- lapping and / or polishing on both sides, in particular of semiconductor wafers significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.
- a commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 pm), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 ⁇ m, tensile strength 2000 N / mm 2 ) were inserted.
- polishing agent a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area).
- the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.
- Carrier disks were used in the manner according to the invention, which were made of sheet steel (thickness 380 .mu.m, tensile strength 2000 N / mm 2 ) and had round, punched-out openings (inside diameter approx. 85 mm). These openings had been cast using the injection molding process with a polypolylene film (thickness approx. 380 ⁇ m, modulus of elasticity approx. 1.2. 10 3 N / mm 2 ), from which a circular opening with a diameter of approx. 77 mm had then been punched out. The fixation was improved in that the film was additionally interlocked with the carrier disk over 12 tooth-shaped recesses evenly distributed over the inner circumference of its openings.
- the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.
Description
Die Erfindung betrifft ein Verfahren zum beidseitigen abtragenden Bearbeiten von scheibenförmigen Werkstücken, insbesondere Halbleiterscheiben, bei welchem die Werkstücke, v..'Iche in die Öffnungen einer durch eine an ihrem Außenumfang angreifende Antriebseinheit in Drehung versetzten, geringere Dicke als das Werkstück aufweisenden Trägerscheibe eingelegt sind, unter Zusatz einer abtragend wirkenden Suspension einer kreisenden Bewegung zwischen über ihre Ober- und Unterseite bewegten Flächengebilden unterworfen werden.The invention relates to a method for two-sided abrasive machining of disc-shaped workpieces, in particular semiconductor wafers, in which the workpieces, v .. 'I's is loaded than the workpiece having carrier disk in the openings staggered by engaging at its outer periphery drive unit in rotation, lesser thickness , with the addition of an abrasive suspension, are subjected to a circular movement between flat structures moving over their top and bottom sides.
Ein solches Verfahren, welches beispielsweise beim beidseitigen Polieren oder Läppen von Halbleiterscheiben eingesetzt werden kann, ist z.B. in der US-PS 36 91 694 oder in einem im IBM Technical Disclosure Bulletin, Vol. 15, No. 6, November 1972, Seite 1760-1761 veröffentlichten Artikel (Verfasser: F. E. Goetz und J. R. Hause) beschrieben. Dabei kommen Trägerscheiben zum Einsatz, die entweder ganz aus Metall, z.B. Stahlblech, gefertigt sind oder aber ganz aus Kunststoff bestehen.Such a method, which can be used, for example, when polishing or lapping semiconductor wafers on both sides, is e.g. in US-PS 36 91 694 or in one in the IBM Technical Disclosure Bulletin, Vol. 15, No. 6, November 1972, pages 1760-1761 published articles (author: F. E. Goetz and J. R. Hause). Carrier washers are used, which are either entirely made of metal, e.g. Sheet steel, are made or consist entirely of plastic.
Die Trägerscheiben aus Metall zeichnen sich zwar durch lange Standzeiten aus, verursachen aber im Verlauf des Bearbeitungsvorganges insbesondere bei den vielfach spröden und gegenüber mechanischen Belastungen empfindlichen Halbleiterscheiben Beschädigungen am Scheibenrand wie etwa Randausbrüche, so daß ein großer Teil der bearbeiteten Scheiben nicht mehr weiterverwendet werden kann. Solche Probleme treten bei den aus Kunststoff gefertigten Trägerscheiben nicht auf. Dafür sind aber die Standzeiten gering, da insbesondere der Außenumfang der Trägerscheiben den mechanischen Belastungen durch die Antriebseinheit, z.B. ein Planetengetriebe, nicht lange standzuhalten vermag.The metal carrier disks are characterized by long service lives, but cause damage to the edge of the wafer, such as edge chipping, in the course of the machining process, in particular in the case of the semiconductor wafers, which are often brittle and sensitive to mechanical loads, so that a large part of the machined disks can no longer be used. Such problems do not occur with the carrier disks made of plastic. However, the service life is short, since in particular the outer circumference of the carrier disks can withstand the mechanical loads caused by the drive unit, e.g. a planetary gear that cannot withstand long.
In der älteren EP-A-197 214 sind Trägerscheiben aus hartem Material beschrieben, in deren zumindest eine Öffnung Werkstückhalter aus demgegenüber weicherem Material eingelegt werden, welche ihrerseits eine Öffnung zur Aufnahme der Werkstücke besitzen. Die Werkstückhalter liegen dabei frei in den Öffnungen.In the older EP-A-197 214 carrier disks made of hard material are described, in the at least one opening of which workpiece holders made of softer material are inserted, which in turn have an opening for receiving the workpieces. The workpiece holders are free in the openings.
Aufgabe der Erfindung war es, ein weiteres Verfahren anzugeben, welches eine beidseitig abtragende Behandlung wie Läppen oder Polieren von scheibenförmigen Werkstücken unter geringer mechanischer Beanspruchung des Werkstückrandes bei gleichzeitiger hoher Standzeit der eingesetzten Trägerscheiben gestattet.The object of the invention was to provide a further method which permits treatment on both sides, such as lapping or polishing of disk-shaped workpieces, with little mechanical stress on the workpiece edge and at the same time a long service life of the carrier disks used.
Gelöst wird die Aufgabe durch ein Verfahren, welches dadurch gekennzeichnet ist, daß Trägerscheiben eingesetzt werden, welche aus einer mit kreisförmigen bis polygonalen Öffnungen versehenen Grundplatte mit in diesen Öffnungen fixierten Flächengebilden aus Kunststoff bestehen, welche mit Öffnungen zurAufnahme des oder der abtragend zu bearbeitenden Werkstücke versehen sind, wobei zmindest der Außenumfang der Trägerscheiben aus einem Werkstoff mit einer Zugfestigkeit von mindestens 100 N/mm2 gefertigt ist, während im mit dem Außenumfang des Werkstückes in Kontakt kommenden Bereich ein Kunststoff mit einem Elastizitätsmodul von 1,0 bis 8x104 N/mm2 vorgesehen ist.The object is achieved by a method which is characterized in that carrier disks are used which consist of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings and which have openings for receiving the workpiece or workpieces to be machined at least the outer circumference of the carrier disks is made of a material with a tensile strength of at least 100 N / mm 2 , while in the area that comes into contact with the outer circumference of the workpiece, a plastic with a modulus of elasticity of 1.0 to 8x104 N / mm 2 is provided.
Dieses Verfahren kann in den üblichen, beispielsweise zum beidseitigen Polieren oder Läppen von scheibenförmigen Werkstücken gebraüchlichen Maschinen unter den dem Fachmann geläufigen Bedingungen durchgeführt werden. Es eignet sich insbesondere für das abtragende Bearbeiten von Scheiben aus kristallinem Material wie Halbleiterscheiben aus beispielsweise Silizium, Germanium, Galliumarsenid, Galliumphosphid, Indiumphosphid oder Scheiben aus oxydischem Material wie z.B. Gallium-Gadolinium-Granat. Daneben kann es auch für das abtragende Bearbeiten von scheibenförmigen Werkstücken aus anderen spröden Werkstoffen wie z.B. Glas angewendet werden.This process can be carried out in the customary machines, for example for polishing or lapping disk-shaped workpieces on both sides, under the conditions familiar to the person skilled in the art. It is particularly suitable for the machining of disks made of crystalline material such as semiconductor wafers made of e.g. silicon, germanium, gallium arsenide, gallium phosphide, indium phosphide or wafers made of oxidic material such as e.g. Gallium gadolinium garnet. In addition, it can also be used for the machining of disc-shaped workpieces made of other brittle materials such as Glass can be applied.
Geeignete Werkstoffe sind dabei solche, die eine gegenüber den durch den Antrieb verursachten mechanischen Beanspruchungen, vor allem Zug- und Druckbelastungen, ausreichende mechanische Stabilität aufweisen. Geeignete Materialien, wie z.B. Metalle wie Aluminium oder insbesondere verschiedene Stähle, besitzen allgemein eine Zugfestigkeit von mindestens 100 N/ mm2, vorzugsweise mindestens 1000 N/mm2. In diesem Zusammenhang ist darauf zu achten, daß der gewählte Werkstoff von der jeweils eingesetzten abtragend wirkenden Suspension, d.h. in der Regel von dem Polier- oder Läppmittel, möglichst wenig angegriffen wird, um die Lebensdauer der Trägerscheiben zu erhöhen und eine Kontamination der zu bearbeitenden Werkstücke weitestgehend auszuschließen. Grundsätzlich ist auch die Verwendung von Kunststoffen ausreichender Zugfestigkeit, also z.B. mancher Bakelitarten oder faserverstärkter Materialien, nicht ausgeschlossen.Suitable materials are those which have sufficient mechanical stability in relation to the mechanical stresses caused by the drive, especially tensile and compressive loads. Suitable materials, such as metals such as aluminum or in particular various steels, generally have a tensile strength of at least 100 N / mm 2 , preferably at least 1000 N / mm 2. In this connection, care must be taken to ensure that the material selected is erosive from the one used acting suspension, that is, as a rule, attacked as little as possible by the polishing or lapping agent in order to increase the service life of the carrier disks and to largely exclude contamination of the workpieces to be machined. In principle, the use of plastics with sufficient tensile strength, for example some types of bakelite or fiber-reinforced materials, is not excluded.
Als Kunststoffe, die mit dem Außenumfang des Werkstückes in Kontakt kommen, können solche Materialien eingesetzt werden, die durch ihre Elastizität eine geringe mechanische Belastung des Werkstückumfanges und durch ihre mechanische Stabilität zugleich während des Bearbeitungsvorganges eine sichere Lagerung des Werkstückes gewährleisten. Grundsätzlich geeignet sind daher Kunststoffe mit einem Elastizitätsmodul von 1,0 bis 8.104 N/mm2, also insbesondere Materialien auf Polyvinylchlorid-, Polypropylen-, Polyethylen- oder Polytetrafluorethylenbasis. Dabei sind jedoch auch gegebenenfalls aus der Geometrie des aus Kunststoff bestehenden Bereiches der Trägerscheibe resultierende Einflüsse auf die mechanische Stabilität zu berücksichtigen.As plastics that come into contact with the outer circumference of the workpiece, materials can be used which, due to their elasticity, ensure a low mechanical load on the workpiece circumference and, due to their mechanical stability, at the same time ensure secure storage of the workpiece during the machining process. Basically, plastics with a modulus of elasticity of 1.0 to 8.10 4 N / mm2 are therefore suitable, in particular materials based on polyvinyl chloride, polypropylene, polyethylene or polytetrafluoroethylene. However, influences on the mechanical stability resulting from the geometry of the area of the carrier disk consisting of plastic are also to be taken into account.
Zur Durchführung des erfindungsgemäßen Verfahrens geeignete Trägerscheiben, welche beispielsweise für das abtragende Bearbeiten von Halbleiterscheiben je nach Dicke des Werkstückes typisch eine Dicke von etwa 150-850 11m aufweisen, können in verschiedener Weise gestaltet sein. Sowohl die Metall-, als auch die Kunststoffteile dieser Trägerscheiben lassen sich günstig in der gewünschten Form durch Stanzen aus Metall-, bevorzugt Stahlblechen und Kunststoff-, bevorzugt Polyvinylchloridfolien entsprechender Dicke herstellen.Carrier disks suitable for carrying out the method according to the invention, which typically have a thickness of approximately 150-850 11 m, for example for the machining of semiconductor wafers depending on the thickness of the workpiece, can be designed in various ways. Both the metal and the plastic parts of these carrier disks can be inexpensively punched out in the desired shape Produce metal, preferably steel sheets and plastic, preferably polyvinyl chloride films of the appropriate thickness.
Eine mögliche Ausführungsform, welche mit Vorteil auch beim beidseitigen Läppen eingesetzt werden kann, besteht aus einer mit kreisförmigen bis polygonalen Öffnungen versehenen Grundplatte mit in diesen Öffnungen fixierten Flächengebilden aus Kunststoff, welche mit Öffnungen zur Aufnahme des oder der abtragend zu bearbeitenden Werkstücke versehen sind. Die Fixierung kann dabei beispielsweise dadurch erreicht werden, daß die paßgerecht ausgestanzten Kunststoffteile mit der metallenen Grundplatte verklebt werden. Eine andere Möglichkeit besteht darin, die Öffnungen der Grundplatte zunächst z.B. nach dem Spritzgußverfahren mit einer Kunststoffolie, bevorzugt aus Polypropylen, auszugießen und aus dieser Folie dann die gewünschte Öffnung auszustanzen. Gegebenenfalls kann die Fixierung durch in die Öffnungen der Grundplatte eingearbeitete, beispielsweise nut- oder zackenförmige Ausnehmungen weiterverbessert werden. Desweiteren können diese Öffnungen auch polygonalen beispielsweise prismatischen, quadrätischen oder hexagonalen Querschnitt aufweisen. Für die Maße der in den Kunststoff eingearbeiteten Öffnungen gilt der Grundsatz, daß zweckmäßig ein Spielraum für das eingelegte Werkstück belassen wird. Allgemein hat es sich z.B. bei runden Werkstücken bewährt, wenn diese in Ruhelage von einem Spalt von 0,1-2 mm Breite umgeben sind.A possible embodiment, which can advantageously also be used for lapping on both sides, consists of a base plate provided with circular to polygonal openings with plastic surface structures fixed in these openings, which are provided with openings for receiving the workpiece or workpieces to be machined. The fixation can be achieved, for example, by gluing the plastic parts punched out to fit the metal base plate. Another possibility is to first open the openings of the base plate e.g. after the injection molding process with a plastic film, preferably made of polypropylene, and then punch the desired opening out of this film. If necessary, the fixation can be further improved by recesses, for example groove-shaped or serrated, machined into the openings in the base plate. Furthermore, these openings can also have a polygonal, for example prismatic, square or hexagonal cross section. For the dimensions of the openings worked into the plastic, the principle applies that it is advisable to leave a margin for the inserted workpiece. In general it has e.g. Proven for round workpieces if they are surrounded by a gap of 0.1-2 mm width in the rest position.
Die hier beispielhaft beschriebene mögliche Ausführungsform von Trägerscheiben läßt sich problemlos in den gebraüchlichen Maschinen zum beidseitigen Polieren oder Läppen einsetzen, wobei für den eigentlichen Bearbeitungsvorgang die üblichen, dem Fachmann geläufigen Bedingungen, z.B. was die eingesetzte abtragende Suspension, Temperatur, Bearbeitungsdruck und dergleichen betrifft, beibehalten oder angepaßt werden können. Gegebenenfalls sind vor dem ersten Einsatz die Trägerscheiben einer vergleichmäßigenden Behandlung, beispielsweise durch Läppen, zu unterziehen, um etwaige Dickeunterschiede zwischen Metall- und Kunststoffbestandteilen auszugleichen. Zumeist können jedoch Dikkeunterschiede bis zu ±5% der Gesamtdicke toleriert werden.The possible embodiment of carrier disks described here by way of example can be used without problems in conventional machines for double-sided polishing or lapping, the usual conditions familiar to the person skilled in the art, e.g. as far as the abrasive suspension used, temperature, processing pressure and the like are concerned, can be maintained or adjusted. If necessary, the carrier disks must be subjected to a comparative treatment, for example by lapping, before the first use in order to compensate for any differences in thickness between metal and plastic components. However, thickness differences of up to ± 5% of the total thickness can usually be tolerated.
Mit Hilfe des erfindungsgemäßen Verfahrens gelingt es beim beidseitigen Läppen und/oder Polieren, insbesondere von Halbleiterscheiben, Verluste an im Randbereich beschädigten Scheiben deutlich verringern und dabei Standzeiten für Trägerscheiben zu erreichen, die denen von Ganzmetallträgerscheiben entsprechen.With the aid of the method according to the invention, lapping and / or polishing on both sides, in particular of semiconductor wafers, significantly reduces losses on wafers damaged in the edge region and thereby achieve service lives for carrier wafers which correspond to those of all-metal carrier wafers.
Eine handelsübliche Apparatur zum beidseitigen Polieren von Halbleiterscheiben wurde mit 27 Siliciumscheiben (Durchmesser 76,2 mm, Scheibendicke 450 pm) beladen, wobei jeweils 3 Scheiben in die Öffnungen je einer von insgesamt 9 aufgelegten, außenverzahnten, und mittels Planetengetriebe angetriebenen Trägerscheiben aus Stahlblech (Dicke 380 um, Zugfestigkeit 2000 N/ mm2) eingelegt wurden.A commercially available apparatus for double-sided polishing of semiconductor wafers was loaded with 27 silicon wafers (diameter 76.2 mm, wafer thickness 450 pm), 3 wafers each in the openings of one of a total of 9 externally toothed carrier disks made of sheet steel and driven by planetary gears (thickness 380 µm, tensile strength 2000 N / mm 2 ) were inserted.
Während des 30-minütigen Poliervorganges wurde als Poliermittel ein handelsübliches Si02 -Sol zugeführt und eine Temperatur von ca. 40°C eingehalten; der Polierdruck betrug 0,5 bar (bezogen auf cm2 Scheibenfläche). Die beiden mit Poliertüchern aus Polyesterfilz belegten Polierplatten rotierten gegensinnig mit je 50 UPM; die Drehzahl der Trägerscheiben betrug 20 UPM.During the 30-minute polishing process, a commercially available SiO 2 sol was supplied as the polishing agent and a temperature of approximately 40 ° C. was maintained; the polishing pressure was 0.5 bar (based on cm 2 disc area). The two polishing plates covered with polishing cloths made of polyester felt rotated in opposite directions with 50 RPM each; the speed of the carrier disks was 20 rpm.
Nach Beendigung des Polierens wurden die Scheiben entnommen und im Randbereich mikroskopisch bei 40- bis 100-facher Vergrößerung untersucht. Sämtliche Scheiben wiesen deutliche Beschädigungen auf und konnten nicht mehr weiter verwendet werden.After the polishing was finished, the disks were removed and examined microscopically in the edge region at a magnification of 40 to 100 times. All of the windows were clearly damaged and could no longer be used.
Nach 50 Polierfahrten wurde die Trägerscheibe wegen des Verschleißes der Außenverzahnung ausgewechselt.After 50 polishing runs, the carrier washer was replaced due to wear on the external teeth.
In derselben Apparatur wurden erneut 27 Siliciumscheiben derselben Spezifikation poliert. Dabei wurden in der erfindungsgemäßen Weise Trägerscheiben eingesetzt, die aus Stahlblech (Dicke 380 um, Zugfestigkeit 2000 N/mm2) gefertigt waren, und die runde, ausgestanzte Öffnungen (Innendurchmesser ca. 85 mm) aufwiesen. Diese Öffnungen waren nach dem Spritzgußverfahren mit einer Polypolylenfolie (Dicke ca. 380 pm, Elastizitätsmodul ca. 1.2 . 103 N/mm2) ausgegossen worden aus der dann eine kreisrunde Öffnung mit ca. 77 mm Durchmesser ausgestanzt worden war. Die Fixierung wurde dadurch verbessert, daß die Folie mit der Trägerscheibe über 12 gleichmäßig über den Innenumfang von deren Öffnungen verteilte zackenförmige Ausnehmungen zusätzlich verzahnt war.27 silicon wafers of the same specification were polished again in the same apparatus. Carrier disks were used in the manner according to the invention, which were made of sheet steel (thickness 380 .mu.m, tensile strength 2000 N / mm 2 ) and had round, punched-out openings (inside diameter approx. 85 mm). These openings had been cast using the injection molding process with a polypolylene film (thickness approx. 380 μm, modulus of elasticity approx. 1.2. 10 3 N / mm 2 ), from which a circular opening with a diameter of approx. 77 mm had then been punched out. The fixation was improved in that the film was additionally interlocked with the carrier disk over 12 tooth-shaped recesses evenly distributed over the inner circumference of its openings.
Nach dem unter ansonsten genau gleichen Bedingungen durchgeführten Poliervorgang wurden die Scheiben ebenfalls entnommen und unter dem Mikroskop im Randbereich untersucht. Bei 40- bis 100-facher Vergrößerung konnten keinerlei Beschädigungen festgestellt werden, so daß sich sämtliche Scheiben weiterverwenden ließen.After the polishing process, which was otherwise carried out under exactly the same conditions, the disks were also removed and examined under the microscope in the edge region. At 40- to 100-fold magnification, no damage was found, so that all the panes could be used again.
Nach 50 Polierfahrten ohne Wechsel der fixierten Folie machte der Verschleiß an der Außenverzahnung einen Wechsel der Trägerscheibe erforderlich.After 50 polishing runs without changing the fixed film, the wear on the external toothing made it necessary to change the carrier disc.
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3524978 | 1985-07-12 | ||
DE19853524978 DE3524978A1 (en) | 1985-07-12 | 1985-07-12 | METHOD FOR DOUBLE-SIDED REMOVAL MACHINING OF DISK-SHAPED WORKPIECES, IN PARTICULAR SEMICONDUCTOR DISCS |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0208315A1 EP0208315A1 (en) | 1987-01-14 |
EP0208315B1 true EP0208315B1 (en) | 1990-09-26 |
Family
ID=6275644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP86109420A Expired - Lifetime EP0208315B1 (en) | 1985-07-12 | 1986-07-10 | Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers |
Country Status (4)
Country | Link |
---|---|
US (1) | US4739589A (en) |
EP (1) | EP0208315B1 (en) |
JP (1) | JPS6224964A (en) |
DE (2) | DE3524978A1 (en) |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19905737C2 (en) * | 1999-02-11 | 2000-12-14 | Wacker Siltronic Halbleitermat | Method for producing a semiconductor wafer with improved flatness |
DE19956250C1 (en) * | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Production of a number of semiconductor wafers comprise simultaneously polishing a front side and a rear side of each wafer and evaluating each wafer for further processing according to quality criteria |
DE19958077A1 (en) * | 1999-12-02 | 2001-06-13 | Wacker Siltronic Halbleitermat | Process for polishing both sides of semiconductor wafers comprises simultaneously polishing and treating the front side and the rear side of the wafers, transferring to an aqueous bath, and cleaning and drying |
DE10004578C1 (en) * | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Production of a semiconductor wafer comprises polishing the edges of the wafer with a cloth with the continuous introduction of an alkaline polishing agent using polishing plates, wetting with a film and cleaning and drying |
DE10012840C2 (en) * | 2000-03-16 | 2001-08-02 | Wacker Siltronic Halbleitermat | Process for the production of a large number of polished semiconductor wafers |
DE10018338C1 (en) * | 2000-04-13 | 2001-08-02 | Wacker Siltronic Halbleitermat | Process for the production of a semiconductor wafer |
DE10023002A1 (en) * | 2000-05-11 | 2001-11-29 | Wacker Siltronic Halbleitermat | Process for double-sided polishing of semiconductor wafers and rotor disks for carrying out the process |
DE10060697A1 (en) * | 2000-12-07 | 2002-06-27 | Wacker Siltronic Halbleitermat | Producing semiconductor wafers used in the production of processor and storage components comprises polishing both sides of the wafer using polishing plates |
DE10250823A1 (en) * | 2002-10-31 | 2004-05-19 | Wacker Siltronic Ag | Carrier disc and process for simultaneous two sided processing of workpieces such as silicon wafers has smooth steel body with plastic coated openings |
DE102004054567A1 (en) * | 2004-11-11 | 2005-12-01 | Siltronic Ag | Process for simultaneous two sided removal of material from semiconductor wafers has wafer between rotary working discs and direction reversal at reduced force |
DE102007013058A1 (en) | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method for simultaneous double-side grinding of semiconductor wafers, comprises moving the wafer freely into a recess of a circulating disk, and processing the wafer between two rotating circular working disk components |
DE102007056627A1 (en) | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method for simultaneously grinding a plurality of semiconductor wafers |
DE102004004556B4 (en) * | 2004-01-29 | 2008-12-24 | Siltronic Ag | Method for producing a semiconductor wafer |
DE102007049811A1 (en) | 2007-10-17 | 2009-04-23 | Siltronic Ag | Rotor disc, method for coating a rotor disc and method for the simultaneous double-sided material removing machining of semiconductor wafers |
DE102009025243A1 (en) | 2009-06-17 | 2010-12-30 | Siltronic Ag | Method for producing and method of processing a semiconductor wafer |
DE102009030292A1 (en) | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method for polishing both sides of a semiconductor wafer |
DE102009047927A1 (en) | 2009-10-01 | 2011-01-27 | Siltronic Ag | Rotor disk for supporting one or multiple disks for conditioning polishing cloth in polishing machine, has core made of material, which have high rigidity and core is fully and partially provided with coating |
DE102010010885A1 (en) | 2010-03-10 | 2011-09-15 | Siltronic Ag | Method for polishing a semiconductor wafer |
DE102011082777A1 (en) | 2011-09-15 | 2012-02-09 | Siltronic Ag | Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer |
DE102012206398A1 (en) | 2012-04-18 | 2012-06-21 | Siltronic Ag | Method for performing two-sided planarization of semiconductor material e.g. wafer, involves providing the insert inside recesses in rotary disc, while supplying the polishing agent in the recess |
DE102011080323A1 (en) | 2011-08-03 | 2013-02-07 | Siltronic Ag | Method for simultaneously abrasive processing e.g. front surface of single crystalline silicon wafer in semiconductor industry, involves locating wafer and ring in recess of rotor disk such that edge of recess of disk guides wafer and ring |
DE102012201516A1 (en) | 2012-02-02 | 2013-08-08 | Siltronic Ag | Semiconductor wafer polishing method for semiconductor industry, involves performing removal polishing on front and back sides of wafer, and single-sided polishing on front side of wafer in presence of polishing agent |
DE102012206708A1 (en) | 2012-04-24 | 2013-10-24 | Siltronic Ag | Method for polishing semiconductor wafer, involves providing functional layer of polishing cloth with pores and small blind holes which are arranged in radially inward region and radially outward region |
DE102013211086A1 (en) | 2013-06-14 | 2013-11-28 | Siltronic Ag | Method for polishing substrate with foamed polishing cloth, involves providing polishing cloth with blind holes whose positions correspond with outlet openings such that polishing agent passes through polishing cloth |
DE102012214998A1 (en) | 2012-08-23 | 2014-02-27 | Siltronic Ag | Method for simultaneous double-sided machining of front and back of e.g. silicon wafer slice, involves inserting semiconductor element into recess formed in base surface of rotor disc to avoid contact of working layer and base surface |
DE102012218745A1 (en) | 2012-10-15 | 2014-04-17 | Siltronic Ag | Method for simultaneous two-sided material-removing machining of surfaces of disc of e.g. semiconductor wafer, involves conducting disc of semiconductor material during co-material-machining of surfaces of recess in rotor disc |
DE102013201663A1 (en) | 2012-12-04 | 2014-06-05 | Siltronic Ag | Method for polishing front and rear sides of disk for fastidious components, involves extending polishing gap from inner edge of cloth to outer edge of cloth, where height of gap at inner edge differs from height of gap at outer edge |
DE102013200072A1 (en) * | 2013-01-04 | 2014-07-10 | Siltronic Ag | Rotor disk for receiving single-crystal silicon, for reciprocal processing between work disk units of double-side polishing apparatus, has damping element arranged between exterior portion and inner portion and made of non-metal material |
DE102013200756A1 (en) | 2013-01-18 | 2014-08-07 | Siltronic Ag | Rotor disc used for double-sided polishing of semiconductor wafer e.g. silicon wafer, has lower polishing cloth that is arranged at bottom annular region, as contact surface of rotor disc |
WO2019154790A1 (en) | 2018-02-09 | 2019-08-15 | Siltronic Ag | Method for polishing a semiconductor wafer |
EP4212280A1 (en) | 2022-01-12 | 2023-07-19 | Siltronic AG | Method of applying a polishing cloth to a polishing plate |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02190258A (en) * | 1989-01-20 | 1990-07-26 | Nkk Corp | Double polishing method for titanium plate |
JPH0373265A (en) * | 1989-05-02 | 1991-03-28 | Sekisui Chem Co Ltd | Carrier for holding body to be polished and manufacture thereof |
USRE37997E1 (en) | 1990-01-22 | 2003-02-18 | Micron Technology, Inc. | Polishing pad with controlled abrasion rate |
DE4011993A1 (en) * | 1990-04-12 | 1991-10-17 | Wacker Chemitronic | Single-sided polished semiconductor disc mfg. system - uses upper and lower polishing surfaces for polishing opposing pairs of discs |
US5140782A (en) * | 1990-10-29 | 1992-08-25 | Honore Mecteau | Tool and method for forming a lens |
US5314107A (en) * | 1992-12-31 | 1994-05-24 | Motorola, Inc. | Automated method for joining wafers |
US5695392A (en) * | 1995-08-09 | 1997-12-09 | Speedfam Corporation | Polishing device with improved handling of fluid polishing media |
MY129961A (en) * | 1996-02-01 | 2007-05-31 | Shinetsu Handotai Kk | Double side polishing machine and method of polishing opposite sides of a workpiece using the same |
US5876273A (en) * | 1996-04-01 | 1999-03-02 | Kabushiki Kaisha Toshiba | Apparatus for polishing a wafer |
JPH10180624A (en) * | 1996-12-19 | 1998-07-07 | Shin Etsu Handotai Co Ltd | Device and method for lapping |
US6062963A (en) * | 1997-12-01 | 2000-05-16 | United Microelectronics Corp. | Retainer ring design for polishing head of chemical-mechanical polishing machine |
US6241582B1 (en) | 1997-09-01 | 2001-06-05 | United Microelectronics Corp. | Chemical mechanical polish machines and fabrication process using the same |
DE19756537A1 (en) * | 1997-12-18 | 1999-07-01 | Wacker Siltronic Halbleitermat | Process for achieving wear behavior that is as linear as possible and tool with wear behavior that is as linear as possible |
US6203407B1 (en) | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
US6089961A (en) * | 1998-12-07 | 2000-07-18 | Speedfam-Ipec Corporation | Wafer polishing carrier and ring extension therefor |
US6419555B1 (en) | 1999-06-03 | 2002-07-16 | Brian D. Goers | Process and apparatus for polishing a workpiece |
DE19938340C1 (en) | 1999-08-13 | 2001-02-15 | Wacker Siltronic Halbleitermat | Production of semiconductor wafer comprises simultaneously polishing the front and rear sides of wafer between rotating polishing plates using an alkaline polishing sol and then an alcohol, cleaning, drying and applying an epitaxial layer |
US6454635B1 (en) | 2000-08-08 | 2002-09-24 | Memc Electronic Materials, Inc. | Method and apparatus for a wafer carrier having an insert |
DE10132504C1 (en) * | 2001-07-05 | 2002-10-10 | Wacker Siltronic Halbleitermat | Method for simultaneously polishing both sides of semiconductor wafer mounted on cogwheel between central cogwheel and annulus uses upper and lower polishing wheel |
DE10228441B4 (en) * | 2001-07-11 | 2005-09-08 | Peter Wolters Werkzeugmaschinen Gmbh | Method and device for automatically loading a double-sided polishing machine with semiconductor wafers |
US7468893B2 (en) * | 2004-09-03 | 2008-12-23 | Entorian Technologies, Lp | Thin module system and method |
US7446410B2 (en) * | 2004-09-03 | 2008-11-04 | Entorian Technologies, Lp | Circuit module with thermal casing systems |
US7522421B2 (en) * | 2004-09-03 | 2009-04-21 | Entorian Technologies, Lp | Split core circuit module |
US20060261449A1 (en) * | 2005-05-18 | 2006-11-23 | Staktek Group L.P. | Memory module system and method |
US7542297B2 (en) | 2004-09-03 | 2009-06-02 | Entorian Technologies, Lp | Optimized mounting area circuit module system and method |
US7443023B2 (en) * | 2004-09-03 | 2008-10-28 | Entorian Technologies, Lp | High capacity thin module system |
US7606050B2 (en) * | 2004-09-03 | 2009-10-20 | Entorian Technologies, Lp | Compact module system and method |
US7606040B2 (en) * | 2004-09-03 | 2009-10-20 | Entorian Technologies, Lp | Memory module system and method |
US20060049513A1 (en) * | 2004-09-03 | 2006-03-09 | Staktek Group L.P. | Thin module system and method with thermal management |
US7511968B2 (en) * | 2004-09-03 | 2009-03-31 | Entorian Technologies, Lp | Buffered thin module system and method |
US20060048385A1 (en) * | 2004-09-03 | 2006-03-09 | Staktek Group L.P. | Minimized profile circuit module systems and methods |
US7606049B2 (en) * | 2004-09-03 | 2009-10-20 | Entorian Technologies, Lp | Module thermal management system and method |
US7579687B2 (en) * | 2004-09-03 | 2009-08-25 | Entorian Technologies, Lp | Circuit module turbulence enhancement systems and methods |
US20060053345A1 (en) * | 2004-09-03 | 2006-03-09 | Staktek Group L.P. | Thin module system and method |
US7289327B2 (en) * | 2006-02-27 | 2007-10-30 | Stakick Group L.P. | Active cooling methods and apparatus for modules |
US7324352B2 (en) * | 2004-09-03 | 2008-01-29 | Staktek Group L.P. | High capacity thin module system and method |
US7616452B2 (en) | 2004-09-03 | 2009-11-10 | Entorian Technologies, Lp | Flex circuit constructions for high capacity circuit module systems and methods |
US7423885B2 (en) * | 2004-09-03 | 2008-09-09 | Entorian Technologies, Lp | Die module system |
US7760513B2 (en) * | 2004-09-03 | 2010-07-20 | Entorian Technologies Lp | Modified core for circuit module system and method |
US20060050492A1 (en) | 2004-09-03 | 2006-03-09 | Staktek Group, L.P. | Thin module system and method |
US7511969B2 (en) * | 2006-02-02 | 2009-03-31 | Entorian Technologies, Lp | Composite core circuit module system and method |
WO2008064158A2 (en) | 2006-11-21 | 2008-05-29 | 3M Innovative Properties Company | Lapping carrier and method |
JP5076723B2 (en) * | 2007-08-09 | 2012-11-21 | 富士通株式会社 | Polishing apparatus, substrate and method for manufacturing electronic apparatus |
JP5494224B2 (en) * | 2010-05-20 | 2014-05-14 | 信越半導体株式会社 | Carrier for double-side polishing apparatus, double-side polishing apparatus and double-side polishing method using the same |
USD726133S1 (en) | 2012-03-20 | 2015-04-07 | Veeco Instruments Inc. | Keyed spindle |
USD712852S1 (en) | 2012-03-20 | 2014-09-09 | Veeco Instruments Inc. | Spindle key |
US9816184B2 (en) | 2012-03-20 | 2017-11-14 | Veeco Instruments Inc. | Keyed wafer carrier |
KR101422955B1 (en) * | 2012-12-20 | 2014-07-23 | 삼성전기주식회사 | Base assembly and driving device of recording disk having the same |
JP5847789B2 (en) * | 2013-02-13 | 2016-01-27 | 信越半導体株式会社 | Method for manufacturing carrier for double-side polishing apparatus and double-side polishing method for wafer |
CN106181747B (en) * | 2016-06-13 | 2018-09-04 | 江苏吉星新材料有限公司 | A kind of large-size sapphire ultrathin double-face polishing window slice processing method |
JP6777530B2 (en) * | 2016-12-26 | 2020-10-28 | クアーズテック株式会社 | Polishing method |
DE102018216304A1 (en) | 2018-09-25 | 2020-03-26 | Siltronic Ag | Process for polishing a semiconductor wafer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2424835A (en) * | 1945-02-10 | 1947-07-29 | Hamilton Watch Co | Method for surfacing small parts |
US2466610A (en) * | 1945-11-23 | 1949-04-05 | Prec Scient Co | Specimen holder |
DE1652055B2 (en) * | 1967-07-20 | 1973-02-22 | Hahn & KoIb, 7000 Stuttgart | FLAT LACING MACHINE |
US3691694A (en) * | 1970-11-02 | 1972-09-19 | Ibm | Wafer polishing machine |
US4205489A (en) * | 1976-12-10 | 1980-06-03 | Balabanov Anatoly S | Apparatus for finishing workpieces on surface-lapping machines |
JPS5555957U (en) * | 1978-10-09 | 1980-04-16 | ||
US4319432A (en) * | 1980-05-13 | 1982-03-16 | Spitfire Tool And Machine Co. | Polishing fixture |
JPS5741164A (en) * | 1980-08-12 | 1982-03-08 | Citizen Watch Co Ltd | Dual carrier for lapping |
JPS57138576A (en) * | 1981-02-20 | 1982-08-26 | Ricoh Co Ltd | Lapping carrier |
US4512113A (en) * | 1982-09-23 | 1985-04-23 | Budinger William D | Workpiece holder for polishing operation |
-
1985
- 1985-07-12 DE DE19853524978 patent/DE3524978A1/en not_active Withdrawn
-
1986
- 1986-05-28 JP JP61121367A patent/JPS6224964A/en active Pending
- 1986-07-02 US US06/881,108 patent/US4739589A/en not_active Expired - Lifetime
- 1986-07-10 DE DE8686109420T patent/DE3674486D1/en not_active Expired - Fee Related
- 1986-07-10 EP EP86109420A patent/EP0208315B1/en not_active Expired - Lifetime
Cited By (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19905737C2 (en) * | 1999-02-11 | 2000-12-14 | Wacker Siltronic Halbleitermat | Method for producing a semiconductor wafer with improved flatness |
DE19956250C1 (en) * | 1999-11-23 | 2001-05-17 | Wacker Siltronic Halbleitermat | Production of a number of semiconductor wafers comprise simultaneously polishing a front side and a rear side of each wafer and evaluating each wafer for further processing according to quality criteria |
DE19958077A1 (en) * | 1999-12-02 | 2001-06-13 | Wacker Siltronic Halbleitermat | Process for polishing both sides of semiconductor wafers comprises simultaneously polishing and treating the front side and the rear side of the wafers, transferring to an aqueous bath, and cleaning and drying |
DE10004578C1 (en) * | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Production of a semiconductor wafer comprises polishing the edges of the wafer with a cloth with the continuous introduction of an alkaline polishing agent using polishing plates, wetting with a film and cleaning and drying |
DE10012840C2 (en) * | 2000-03-16 | 2001-08-02 | Wacker Siltronic Halbleitermat | Process for the production of a large number of polished semiconductor wafers |
DE10018338C1 (en) * | 2000-04-13 | 2001-08-02 | Wacker Siltronic Halbleitermat | Process for the production of a semiconductor wafer |
DE10023002B4 (en) * | 2000-05-11 | 2006-10-26 | Siltronic Ag | Set of carriers and its use |
DE10023002A1 (en) * | 2000-05-11 | 2001-11-29 | Wacker Siltronic Halbleitermat | Process for double-sided polishing of semiconductor wafers and rotor disks for carrying out the process |
DE10060697A1 (en) * | 2000-12-07 | 2002-06-27 | Wacker Siltronic Halbleitermat | Producing semiconductor wafers used in the production of processor and storage components comprises polishing both sides of the wafer using polishing plates |
DE10060697B4 (en) * | 2000-12-07 | 2005-10-06 | Siltronic Ag | Double-sided polishing method with reduced scratch rate and apparatus for carrying out the method |
DE10250823A1 (en) * | 2002-10-31 | 2004-05-19 | Wacker Siltronic Ag | Carrier disc and process for simultaneous two sided processing of workpieces such as silicon wafers has smooth steel body with plastic coated openings |
DE10250823B4 (en) * | 2002-10-31 | 2005-02-03 | Siltronic Ag | Carrier and method for simultaneous two-sided machining of workpieces |
DE102004004556B4 (en) * | 2004-01-29 | 2008-12-24 | Siltronic Ag | Method for producing a semiconductor wafer |
DE102004054567A1 (en) * | 2004-11-11 | 2005-12-01 | Siltronic Ag | Process for simultaneous two sided removal of material from semiconductor wafers has wafer between rotary working discs and direction reversal at reduced force |
DE102007056628A1 (en) | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method for simultaneously grinding a plurality of semiconductor wafers |
DE102007056627A1 (en) | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method for simultaneously grinding a plurality of semiconductor wafers |
DE102007013058A1 (en) | 2007-03-19 | 2008-09-25 | Siltronic Ag | Method for simultaneous double-side grinding of semiconductor wafers, comprises moving the wafer freely into a recess of a circulating disk, and processing the wafer between two rotating circular working disk components |
DE102007013058B4 (en) | 2007-03-19 | 2024-01-11 | Lapmaster Wolters Gmbh | Method for grinding several semiconductor wafers simultaneously |
US8113913B2 (en) | 2007-03-19 | 2012-02-14 | Siltronic Ag | Method for the simultaneous grinding of a plurality of semiconductor wafers |
DE102007049811A1 (en) | 2007-10-17 | 2009-04-23 | Siltronic Ag | Rotor disc, method for coating a rotor disc and method for the simultaneous double-sided material removing machining of semiconductor wafers |
US9539695B2 (en) | 2007-10-17 | 2017-01-10 | Siltronic Ag | Carrier, method for coating a carrier, and method for the simultaneous double-side material-removing machining of semiconductor wafers |
DE102007049811B4 (en) * | 2007-10-17 | 2016-07-28 | Peter Wolters Gmbh | Rotor disc, method for coating a rotor disc and method for the simultaneous double-sided material removing machining of semiconductor wafers |
DE102009025243A1 (en) | 2009-06-17 | 2010-12-30 | Siltronic Ag | Method for producing and method of processing a semiconductor wafer |
DE102009030292A1 (en) | 2009-06-24 | 2010-12-30 | Siltronic Ag | Method for polishing both sides of a semiconductor wafer |
US8376811B2 (en) | 2009-06-24 | 2013-02-19 | Siltronic Ag | Method for the double sided polishing of a semiconductor wafer |
DE102009047927A1 (en) | 2009-10-01 | 2011-01-27 | Siltronic Ag | Rotor disk for supporting one or multiple disks for conditioning polishing cloth in polishing machine, has core made of material, which have high rigidity and core is fully and partially provided with coating |
DE102010010885A1 (en) | 2010-03-10 | 2011-09-15 | Siltronic Ag | Method for polishing a semiconductor wafer |
US10707069B2 (en) | 2010-03-10 | 2020-07-07 | Siltronic Ag | Method for polishing a semiconductor wafer |
DE102011080323A1 (en) | 2011-08-03 | 2013-02-07 | Siltronic Ag | Method for simultaneously abrasive processing e.g. front surface of single crystalline silicon wafer in semiconductor industry, involves locating wafer and ring in recess of rotor disk such that edge of recess of disk guides wafer and ring |
DE102011082777A1 (en) | 2011-09-15 | 2012-02-09 | Siltronic Ag | Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer |
DE102012201516A1 (en) | 2012-02-02 | 2013-08-08 | Siltronic Ag | Semiconductor wafer polishing method for semiconductor industry, involves performing removal polishing on front and back sides of wafer, and single-sided polishing on front side of wafer in presence of polishing agent |
DE102012206398A1 (en) | 2012-04-18 | 2012-06-21 | Siltronic Ag | Method for performing two-sided planarization of semiconductor material e.g. wafer, involves providing the insert inside recesses in rotary disc, while supplying the polishing agent in the recess |
DE102012206708A1 (en) | 2012-04-24 | 2013-10-24 | Siltronic Ag | Method for polishing semiconductor wafer, involves providing functional layer of polishing cloth with pores and small blind holes which are arranged in radially inward region and radially outward region |
DE102012214998A1 (en) | 2012-08-23 | 2014-02-27 | Siltronic Ag | Method for simultaneous double-sided machining of front and back of e.g. silicon wafer slice, involves inserting semiconductor element into recess formed in base surface of rotor disc to avoid contact of working layer and base surface |
DE102012218745A1 (en) | 2012-10-15 | 2014-04-17 | Siltronic Ag | Method for simultaneous two-sided material-removing machining of surfaces of disc of e.g. semiconductor wafer, involves conducting disc of semiconductor material during co-material-machining of surfaces of recess in rotor disc |
DE102013201663B4 (en) | 2012-12-04 | 2020-04-23 | Siltronic Ag | Process for polishing a semiconductor wafer |
DE102013201663A1 (en) | 2012-12-04 | 2014-06-05 | Siltronic Ag | Method for polishing front and rear sides of disk for fastidious components, involves extending polishing gap from inner edge of cloth to outer edge of cloth, where height of gap at inner edge differs from height of gap at outer edge |
DE102013200072A1 (en) * | 2013-01-04 | 2014-07-10 | Siltronic Ag | Rotor disk for receiving single-crystal silicon, for reciprocal processing between work disk units of double-side polishing apparatus, has damping element arranged between exterior portion and inner portion and made of non-metal material |
DE102013200756A1 (en) | 2013-01-18 | 2014-08-07 | Siltronic Ag | Rotor disc used for double-sided polishing of semiconductor wafer e.g. silicon wafer, has lower polishing cloth that is arranged at bottom annular region, as contact surface of rotor disc |
DE102013211086A1 (en) | 2013-06-14 | 2013-11-28 | Siltronic Ag | Method for polishing substrate with foamed polishing cloth, involves providing polishing cloth with blind holes whose positions correspond with outlet openings such that polishing agent passes through polishing cloth |
WO2019154790A1 (en) | 2018-02-09 | 2019-08-15 | Siltronic Ag | Method for polishing a semiconductor wafer |
EP4212280A1 (en) | 2022-01-12 | 2023-07-19 | Siltronic AG | Method of applying a polishing cloth to a polishing plate |
Also Published As
Publication number | Publication date |
---|---|
JPS6224964A (en) | 1987-02-02 |
DE3674486D1 (en) | 1990-10-31 |
DE3524978A1 (en) | 1987-01-22 |
US4739589A (en) | 1988-04-26 |
EP0208315A1 (en) | 1987-01-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0208315B1 (en) | Method for simultaneously machining both sides of disc-shaped work pieces, especially semiconductor wafers | |
DE10132504C1 (en) | Method for simultaneously polishing both sides of semiconductor wafer mounted on cogwheel between central cogwheel and annulus uses upper and lower polishing wheel | |
DE3335116A1 (en) | SEMICONDUCTOR BOARDS AND METHOD AND DEVICE FOR THEIR PRODUCTION | |
DE102013219468B4 (en) | A method of simultaneously separating a plurality of slices from a workpiece | |
DE19626396A1 (en) | Silicon wafer grinding machine - grinds front and back wafer faces simultaneously under temp. control | |
DE102010013520B4 (en) | Process for double-sided polishing of a semiconductor wafer | |
DE3120477A1 (en) | DEVICE FOR CLAMPING AND FIXING SEMICONDUCTOR PLATES | |
DE19755705A1 (en) | Double sided lapping method for large sized wafer | |
DE69928154T2 (en) | Ultra-fine groove cutting tip and ultra-fine grooving tool | |
DE2055230A1 (en) | Semiconductor material cutting device and method of making the device | |
DE2819420A1 (en) | PROCESS FOR SAWING A HARD SINGLE CRYSTAL BLOCK INTO DISCS | |
DE60018338T2 (en) | Method and device for processing the components of a neutron lens | |
DE102006022089A1 (en) | Process for producing a semiconductor wafer with a profiled edge | |
EP0412537A2 (en) | Process and device for the treatment of chemico-mechanical publishing fabrics, particularly for semiconductor wafers | |
DE60012320T2 (en) | TURNING TOOL WITH COMBINED GRINDING AND BREAKING EFFICIENCY FOR PRODUCING PROFILES OR CUTS ON SHEETS FROM FRAGILE MATERIALS AND MARBLE, GRANITE, STONE | |
DE3033944A1 (en) | LAPPING DEVICE FOR THIN PLAINS AND CLAMPING DEVICE FOR THE SAME AS PART OF THE LAPPING DEVICE | |
DE102014220888B4 (en) | Apparatus and method for double-sided polishing of disc-shaped workpieces | |
DE102016211709B3 (en) | Apparatus and method for dressing polishing cloths | |
DE3339942C1 (en) | Processing of disc-shaped workpieces made of broken brittle materials | |
DE102012214998B4 (en) | Method for double-sided processing of a semiconductor wafer | |
DE3300860C2 (en) | Inner diameter saw | |
DE102007029907A1 (en) | Rotor disk for material-erosive processing of tool in e.g. double-sided processing machine, has insert ring engaged into recess and comprises another recess for receiving tool to be processed | |
DE1943659A1 (en) | Laepp machine | |
DE10162597C1 (en) | Polished semiconductor disc manufacturing method uses polishing between upper and lower polishing plates | |
DE102019218879A1 (en) | WAFER PROCESSING PROCESS |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 19860710 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB IT NL |
|
17Q | First examination report despatched |
Effective date: 19880912 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB IT NL |
|
ITF | It: translation for a ep patent filed |
Owner name: SOCIETA' ITALIANA BREVETTI S.P.A. |
|
REF | Corresponds to: |
Ref document number: 3674486 Country of ref document: DE Date of ref document: 19901031 |
|
ET | Fr: translation filed | ||
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) | ||
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed | ||
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 19920610 Year of fee payment: 7 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 19920731 Year of fee payment: 7 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Effective date: 19940201 |
|
NLV4 | Nl: lapsed or anulled due to non-payment of the annual fee | ||
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FR Effective date: 19940331 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: ST |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 19940808 Year of fee payment: 9 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: 732E |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DE Effective date: 19960402 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20050706 Year of fee payment: 20 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20050728 Year of fee payment: 20 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: PE20 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20060709 |