EP0000715A1 - Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé - Google Patents

Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé Download PDF

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Publication number
EP0000715A1
EP0000715A1 EP78100452A EP78100452A EP0000715A1 EP 0000715 A1 EP0000715 A1 EP 0000715A1 EP 78100452 A EP78100452 A EP 78100452A EP 78100452 A EP78100452 A EP 78100452A EP 0000715 A1 EP0000715 A1 EP 0000715A1
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European Patent Office
Prior art keywords
layer
cover glass
base
grid
sulfide layer
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EP78100452A
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German (de)
English (en)
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EP0000715B1 (fr
Inventor
Gerhard Dipl.-Ing. Bilger
Gert Dr.-Ing. Hewig
Fritz Dipl.-Phys. Pfisterer
Hans-Werner Dipl.-Ing. Schock
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
    • C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
    • C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
    • C11D17/047—Arrangements specially adapted for dry cleaning or laundry dryer related applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the invention relates to a method for producing solar cells with a p-n thin-film heterojunction from a cadmium sulfide layer vapor-deposited on an electrically conductive base and a copper sulfide layer chemically produced thereon, with which an electrically conductive grid is in contact.
  • Cadmium sulfide solar cells have a lower efficiency than the known silicon single-crystal solar cells, but they have the considerable advantage that they can be manufactured much more cheaply. It is known to produce a semiconductor photo element from a thin silicon single crystal with p- and n-type zones, which is subsequently coated by the like with a casting resin or the like. is encapsulated. Cadmium sulfide solar cells, which belong to the so-called thin-film solar cells, have a polycrystalline semiconductor layer which is vapor-deposited on an electrically conductive base, usually a metallic support, so that their production is considerably cheaper. It is known to convert them to cells in a manner similar to that of silicon solar cells encapsulate.
  • the manufacturing effort is thus reduced only with regard to the manufacture of the semiconductor layers, so that the overall manufacturing effort is still relatively high, especially if several solar cells are to be interconnected to form solar batteries.
  • additional carrier materials have to be provided, which further increase the costs.
  • the invention has for its object to provide a method for producing cadmium sulfide solar cells that enables inexpensive production of a fully encapsulated solar cell that has a favorable efficiency.
  • the invention consists in that the cadmium sulphide layer and the copper sulphide layer are applied to a component serving as a lower part, which then forms an encapsulated cell with an upper part formed from a cover glass previously provided with an adhesive and the conductive grid is put together.
  • cover slip is sufficient to ensure sufficient mechanical strength.
  • the use of the cover slip also has the advantage that the UV component of the incident light is filtered out of the cover slip, so that damage to the adhesive is not to be feared even after a long period of use.
  • the lower part contains a glass plate, on which, preferably using an adhesion promoter, a base made of silver or zinc is applied, onto which the cadmium sulfide layer is evaporated.
  • a glass plate in the lower part has the advantage that not only the mechanical strength is increased, but also that uniform thermal expansions of the entire cell are ensured, so that destruction or damage by thermal stresses is not to be expected, even if that is particularly the case specific solar cell is set up in areas where, for example, there are very large differences between day and night temperatures.
  • a thin, vapor-deposited layer of chromium or titanium can serve as an adhesion promoter, for example.
  • the base made of silver or zinc is evaporated at about 400 ° C. This leads to the advantage that, on the one hand, existing water vapor can escape, while, on the other hand, the base, which is preferably made of silver, crystallizes better, which leads to a better crystalline structure of the cadmium sulfide layer applied next.
  • the cadmium sulfide layer is vapor-deposited onto the base through a quartz frit.
  • This vapor deposition of cadmium sulfide through a quartz frit is also suitable for the production of solar cells constructed in a different way.
  • the cadmium sulfide layer is preferably roughened by etching before the copper sulfide layer is produced. This reduces, on the one hand, a potentially harmful reflection, while, on the other hand, grain boundaries are etched out.
  • a copper layer is evaporated onto the layer on copper sulfide, after which the lower part is heated to approximately 180 ° C.
  • This subsequently vapor-deposited copper means that any vacancies in the copper sulfide can be filled up by diffusion. If this is done under atmospheric conditions, a thin layer of copper oxide (Cu 2 O) forms on the surface. This causes an electron reflecting potential to be formed on the surface. This reduces the surface recombination of the minority carriers (electrons) in the copper sulfide.
  • a heat seal adhesive is applied to the cover glass of the upper part, on which a copper foil is first held, from which a grid is then etched out, after which the upper part and lower part are heat sealed under vacuum by means of the heat seal adhesive of the upper part.
  • the heat seal adhesive thus initially has the function of holding the copper foil on the upper part and then establishing the connection to the lower part.
  • the heat seal adhesive is applied in liquid form and then dried in a vacuum and, if appropriate, thereafter in the atmosphere.
  • the first drying under vacuum while removing all gases and vapors that may interfere with the electrical properties of the solar cell, creates an adhesive layer that then enables heat sealing and whose thickness is somewhat thicker than the thickness of the grid.
  • a thin gold layer is applied galvanically before the upper part and lower part are joined onto the grid in order to achieve a barrier-free contact.
  • a solar cell can be created in which a base plate, which is preferably made of glass, with an electrically conductive base, a cadmium sulfide layer and a copper sulfide layer forms a prefabricated lower part, which has an electrically conductive grid and a cover glass forming an upper part is joined to form an encapsulated cell.
  • a base plate which is preferably made of glass
  • an electrically conductive base a cadmium sulfide layer and a copper sulfide layer
  • a copper sulfide layer forms a prefabricated lower part, which has an electrically conductive grid and a cover glass forming an upper part is joined to form an encapsulated cell.
  • the cover glass with the grid and the base plate with the base are laterally offset from one another in such a way that a contact formed by the base and on the other side a contact formed by the grid are exposed.
  • a solar cell is very easy to connect to other solar cells because the necessary contacts are created and freely accessible.
  • a large cover glass with several in a row is arranged as the upper part electrically conductive grids are provided, each of which is assigned a lower part, which are arranged offset from the grids in such a way that the documents are in contact on one side with the grating associated with the adjacent lower part, and that on one side of the cover glass an edge of the outer Grid is exposed as a contact, while on the other side an edge of the base of the outer lower part is exposed as a contact.
  • a large cover glass is provided with several rows of grids and accordingly with several rows of lower parts. A very efficient production is obtained, the somewhat simpler upper part taking up a large area, while the lower parts are designed as individually manufactured elements which are of a size which is favorable for the application of the cadmium sulfide layer.
  • the solar cell shown in FIG. 1 has a prefabricated lower part 1 and a prefabricated upper part 2, which are assembled into a self-contained cell in a subsequent operation.
  • the lower part 1 has a base plate 3, which preferably consists of a substrate glass. This glass is ultrasonically cleaned in a solvent before an adhesion-promoting layer 4 is applied on one side, for which vapor-deposited chromium (Cr) is preferably used. A layer 5 of silver (Ag) is also applied to this adhesion promoter by vapor deposition. This vapor deposition of both the adhesion promoter and the silver takes place at about 400 ° C., which on the one hand leads to a release of water vapor and on the other hand leads to good crystallization of the silver layer 5, which is advantageous for the subsequent operations.
  • a base plate 3 which preferably consists of a substrate glass. This glass is ultrasonically cleaned in a solvent before an adhesion-promoting layer 4 is applied on one side, for which vapor-deposited chromium (Cr) is preferably used.
  • Cr chromium
  • a layer 5 of silver (Ag) is also applied to this adhesion promoter by vapor deposition. This
  • CdS cadmium sulfide
  • the cadmium sulfide layer 6 is roughened with an aqueous hydrochloric acid (HCl) to reduce reflection and to etch out grain boundaries.
  • a copper sulfide (Cu 2 S) layer 7 is then produced on the cadmium sulfide layer 6, which is done by a chemical reaction by briefly immersing the lower part in a monovalent copper ion solution for about 5 to 10 seconds.
  • This copper sulfide layer should have an order of magnitude of 0.2 ⁇ thickness.
  • a copper (Cu) layer 8 which has a thickness of 30 to 100 ⁇ , is also evaporated onto the copper sulfide layer 7. Subsequently, the lower part is heated at about 180 ° under atmosphere, which enables filling of vacancies by copper diffusing into the copper sulfide layer and formation of a copper oxide layer (Cu 2 O). With this operation, the manufacture of the lower part 1 is finished. As can be seen from FIG. 1, the layers 6, 7 and 8 are applied in such a way that an edge strip 9 of the base 5 made of silver remains free in FIG. 1, which can later be used as a contact.
  • the upper part 2 is also manufactured separately. It contains a cover glass 10, which is also cleaned with ultrasound in a solvent prior to further processing.
  • a first liquid heat seal adhesive 11 with a layer thickness of 120 to 150 ⁇ is placed on this cover glass 10 on one side by means of a doctor or the like. applied.
  • an adhesive from Kömmerling, Zweimaschiner Landstrasse, 6780 Pirmasens, which has the company identification AK 543, is suitable.
  • the cover glass 10 and the initially applied heat-sealing adhesive 11 are then subjected to drying in a vacuum oven at about 100 ° C. for 4 to 5 hours, so that vapors and chamfers can escape from the initially liquid heat-sealing adhesive.
  • the now finished upper part 2 is connected to the lower part 1 in a vacuum press at approx. 170 ° to 180 °, the connection being obtained by the layer 11 of the heat seal adhesive, which has a layer thickness which is somewhat larger than the thickness of the grid 12 .
  • the grid 12 lies with its gold layer 13 on the layer 8 made of copper and establishes a secure contact, while subsequently the grid 12 penetrates into the layer 11 during heating, which also has an adhesive connection between the cover glass 10 and the layer 8 manufactures.
  • the upper part 2 is applied so offset on the lower part 1 that on the left in the drawing, i.e. A strip 14 of the grid 12, which also serves as a contact, is exposed opposite the contact strip 9.
  • a solar battery can be assembled from several of the solar cells shown in FIG. 1, the contacts of the adjacent solar cells formed by the edge strips 9 and 14 then being connected to one another.
  • a common cover glass 15 can be provided for several solar cells, as shown in FIGS. 2 and 3.
  • There- . at parts 1 are used, which were produced according to the preceding description. These bases are appropriately manufactured in a certain size in which they can be manufactured economically.
  • the contacts between the individual solar cells are produced in the manner described for FIG. 1, which are only indicated schematically in FIG. 2. In this case, contact is made between the grid 12 and the layer 5 of silver serving as an electrically conductive base for those solar cells lying in a row. As can be seen in FIG.
  • FIG. 4 schematically shows a device with which a homogeneous layer of cadmium sulfide can be evaporated onto a lower part 1 of a solar cell.
  • a graphite furnace 16 is provided, which is surrounded by a graphite heating coil 17 to which a power supply 18 is connected.
  • the outside of the graphite heating coil 17 is surrounded by a radiation reflector 19.
  • a thermocouple 20 measuring the temperature for temperature control projects into the graphite furnace 16.
  • the graphite furnace is seated on an insulating ceramic ring 21.
  • the graphite furnace 16 has the shape of a cylinder, in which an upwardly open chamber 23 is divided by an annular collar 22, into which cadmium sulfide in powder form is filled.
  • the chamber 23 is closed at the top by a porous quartz frit 24, which is closely connected to the ring collar 22 is fitted outward adjoining cylindrical part.
  • the quartz frit 24 and the inner surface of the graphite furnace 16 are expediently ground.
  • the quartz frit 24 is secured in its position in a manner not shown by one or more pins.
  • the quartz frit 24 is arranged at a sufficient distance from the end of the graphite furnace 16, that is to say at about a third of the height, so that a temperature is maintained in the area of the quartz frit that is high enough to prevent the quartz frit from evaporating and becoming impermeable .
  • thermocouple 20 adjoins the graphite furnace, which sits on the ceramic ring. This approach envelops the thermocouple 20 over a sufficient length, so that it is ensured that the temperature measured by the thermocouple 20 corresponds as closely as possible to the temperature of the chamber 23.
  • a displaceable diaphragm 26 Arranged above the outlet of the graphite furnace 16 is a displaceable diaphragm 26, with which the evaporating gas from the lower part 1 of the solar cell can initially be maintained.
  • This lower part 1 rests on a support 27, which leaves a section of the size to be vaporized on the lower part 1 with cadmium sulfide.
  • a heating part 28 designed as a graphite meander is provided, which is covered by a radiation reflector 29. This heating part 28 ensures that the lower part of the solar cell maintains a temperature of approximately 200 ° C. when the cadmium sulfide is evaporated.

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
EP78100452A 1977-07-21 1978-07-20 Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé Expired EP0000715B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2732933 1977-07-21
DE2732933A DE2732933C2 (de) 1977-07-21 1977-07-21 Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang

Publications (2)

Publication Number Publication Date
EP0000715A1 true EP0000715A1 (fr) 1979-02-21
EP0000715B1 EP0000715B1 (fr) 1981-09-02

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EP78100452A Expired EP0000715B1 (fr) 1977-07-21 1978-07-20 Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé

Country Status (4)

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US (1) US4283590A (fr)
EP (1) EP0000715B1 (fr)
AU (1) AU519312B2 (fr)
DE (1) DE2732933C2 (fr)

Cited By (3)

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Publication number Priority date Publication date Assignee Title
EP0024615A2 (fr) * 1979-08-22 1981-03-11 Ses, Incorporated Electrode pour cellule photovoltaique et procédé pour sa fabrication
EP0121869A1 (fr) * 1983-04-02 1984-10-17 Nukem GmbH Procédé pour empêcher les courts-circuits ou les faux-contacts dans une cellule solaire à couches minces de grande surface
WO1988003706A1 (fr) * 1986-11-12 1988-05-19 Hughes Aircraft Company Systeme de cellule solaire a l'arseniure de gallium

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DE2926754A1 (de) * 1979-07-03 1981-01-15 Licentia Gmbh Solarzellen-anordnung
US4319258A (en) * 1980-03-07 1982-03-09 General Dynamics, Pomona Division Schottky barrier photovoltaic detector
US4400577A (en) * 1981-07-16 1983-08-23 Spear Reginald G Thin solar cells
EP0091998A1 (fr) * 1982-03-08 1983-10-26 Prutec Limited Cellules solaires en sulfure de cadmium
DE3328899C2 (de) * 1983-08-10 1985-07-11 Nukem Gmbh, 6450 Hanau Photovoltaische Zelle
DE3328869A1 (de) * 1983-08-10 1985-02-28 Nukem Gmbh, 6450 Hanau Photovoltaische zelle und verfahren zum herstellen dieser
US4616403A (en) * 1984-08-31 1986-10-14 Texas Instruments Incorporated Configuration of a metal insulator semiconductor with a processor based gate
US4673770A (en) * 1985-10-21 1987-06-16 Joseph Mandelkorn Glass sealed silicon membrane solar cell
IT1272665B (it) * 1993-09-23 1997-06-26 Eurosolare Spa Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino
JP3516156B2 (ja) * 1997-12-16 2004-04-05 シャープ株式会社 太陽電池の製造方法および保護カバー用素材板
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US8076568B2 (en) 2006-04-13 2011-12-13 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7507903B2 (en) * 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US7898054B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US7898053B2 (en) 2000-02-04 2011-03-01 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
WO2014019560A1 (fr) 2012-08-02 2014-02-06 Dynamic Solar Systems Inc. Photopile stratifiée améliorée

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THIN SOLID FILMS, vol. 45, no. 1, August 1977, Lausanne (CH) G.H. HEWIG, W.H. BLOSS: "Technology of thin film solar cells", Seiten 1-7. Vorgelesen an der International conference on metallurgical coatings, San Francisco USA; 28 M{rz-1 April 1977 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024615A2 (fr) * 1979-08-22 1981-03-11 Ses, Incorporated Electrode pour cellule photovoltaique et procédé pour sa fabrication
EP0024615A3 (fr) * 1979-08-22 1982-04-07 Ses, Incorporated Electrode pour cellule photovoltaique et procédé pour sa fabrication
EP0121869A1 (fr) * 1983-04-02 1984-10-17 Nukem GmbH Procédé pour empêcher les courts-circuits ou les faux-contacts dans une cellule solaire à couches minces de grande surface
WO1988003706A1 (fr) * 1986-11-12 1988-05-19 Hughes Aircraft Company Systeme de cellule solaire a l'arseniure de gallium

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DE2732933C2 (de) 1984-11-15
DE2732933A1 (de) 1979-02-08
US4283590A (en) 1981-08-11
EP0000715B1 (fr) 1981-09-02
AU519312B2 (en) 1981-11-26
AU3810878A (en) 1980-01-24

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