EP0000715A1 - Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé - Google Patents
Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé Download PDFInfo
- Publication number
- EP0000715A1 EP0000715A1 EP78100452A EP78100452A EP0000715A1 EP 0000715 A1 EP0000715 A1 EP 0000715A1 EP 78100452 A EP78100452 A EP 78100452A EP 78100452 A EP78100452 A EP 78100452A EP 0000715 A1 EP0000715 A1 EP 0000715A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- cover glass
- base
- grid
- sulfide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- CKKNXLXIMISLER-UHFFFAOYSA-N [Cu]=S.[S-2].[Cd+2] Chemical compound [Cu]=S.[S-2].[Cd+2] CKKNXLXIMISLER-UHFFFAOYSA-N 0.000 title 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 31
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000006059 cover glass Substances 0.000 claims abstract description 27
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000002318 adhesion promoter Substances 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000007496 glass forming Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910002804 graphite Inorganic materials 0.000 description 11
- 239000010439 graphite Substances 0.000 description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004922 lacquer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000012945 sealing adhesive Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- AQKDYYAZGHBAPR-UHFFFAOYSA-M copper;copper(1+);sulfanide Chemical compound [SH-].[Cu].[Cu+] AQKDYYAZGHBAPR-UHFFFAOYSA-M 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical group O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D17/00—Detergent materials or soaps characterised by their shape or physical properties
- C11D17/04—Detergent materials or soaps characterised by their shape or physical properties combined with or containing other objects
- C11D17/041—Compositions releasably affixed on a substrate or incorporated into a dispensing means
- C11D17/047—Arrangements specially adapted for dry cleaning or laundry dryer related applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
- H01L31/03365—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table comprising only Cu2X / CdX heterojunctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a method for producing solar cells with a p-n thin-film heterojunction from a cadmium sulfide layer vapor-deposited on an electrically conductive base and a copper sulfide layer chemically produced thereon, with which an electrically conductive grid is in contact.
- Cadmium sulfide solar cells have a lower efficiency than the known silicon single-crystal solar cells, but they have the considerable advantage that they can be manufactured much more cheaply. It is known to produce a semiconductor photo element from a thin silicon single crystal with p- and n-type zones, which is subsequently coated by the like with a casting resin or the like. is encapsulated. Cadmium sulfide solar cells, which belong to the so-called thin-film solar cells, have a polycrystalline semiconductor layer which is vapor-deposited on an electrically conductive base, usually a metallic support, so that their production is considerably cheaper. It is known to convert them to cells in a manner similar to that of silicon solar cells encapsulate.
- the manufacturing effort is thus reduced only with regard to the manufacture of the semiconductor layers, so that the overall manufacturing effort is still relatively high, especially if several solar cells are to be interconnected to form solar batteries.
- additional carrier materials have to be provided, which further increase the costs.
- the invention has for its object to provide a method for producing cadmium sulfide solar cells that enables inexpensive production of a fully encapsulated solar cell that has a favorable efficiency.
- the invention consists in that the cadmium sulphide layer and the copper sulphide layer are applied to a component serving as a lower part, which then forms an encapsulated cell with an upper part formed from a cover glass previously provided with an adhesive and the conductive grid is put together.
- cover slip is sufficient to ensure sufficient mechanical strength.
- the use of the cover slip also has the advantage that the UV component of the incident light is filtered out of the cover slip, so that damage to the adhesive is not to be feared even after a long period of use.
- the lower part contains a glass plate, on which, preferably using an adhesion promoter, a base made of silver or zinc is applied, onto which the cadmium sulfide layer is evaporated.
- a glass plate in the lower part has the advantage that not only the mechanical strength is increased, but also that uniform thermal expansions of the entire cell are ensured, so that destruction or damage by thermal stresses is not to be expected, even if that is particularly the case specific solar cell is set up in areas where, for example, there are very large differences between day and night temperatures.
- a thin, vapor-deposited layer of chromium or titanium can serve as an adhesion promoter, for example.
- the base made of silver or zinc is evaporated at about 400 ° C. This leads to the advantage that, on the one hand, existing water vapor can escape, while, on the other hand, the base, which is preferably made of silver, crystallizes better, which leads to a better crystalline structure of the cadmium sulfide layer applied next.
- the cadmium sulfide layer is vapor-deposited onto the base through a quartz frit.
- This vapor deposition of cadmium sulfide through a quartz frit is also suitable for the production of solar cells constructed in a different way.
- the cadmium sulfide layer is preferably roughened by etching before the copper sulfide layer is produced. This reduces, on the one hand, a potentially harmful reflection, while, on the other hand, grain boundaries are etched out.
- a copper layer is evaporated onto the layer on copper sulfide, after which the lower part is heated to approximately 180 ° C.
- This subsequently vapor-deposited copper means that any vacancies in the copper sulfide can be filled up by diffusion. If this is done under atmospheric conditions, a thin layer of copper oxide (Cu 2 O) forms on the surface. This causes an electron reflecting potential to be formed on the surface. This reduces the surface recombination of the minority carriers (electrons) in the copper sulfide.
- a heat seal adhesive is applied to the cover glass of the upper part, on which a copper foil is first held, from which a grid is then etched out, after which the upper part and lower part are heat sealed under vacuum by means of the heat seal adhesive of the upper part.
- the heat seal adhesive thus initially has the function of holding the copper foil on the upper part and then establishing the connection to the lower part.
- the heat seal adhesive is applied in liquid form and then dried in a vacuum and, if appropriate, thereafter in the atmosphere.
- the first drying under vacuum while removing all gases and vapors that may interfere with the electrical properties of the solar cell, creates an adhesive layer that then enables heat sealing and whose thickness is somewhat thicker than the thickness of the grid.
- a thin gold layer is applied galvanically before the upper part and lower part are joined onto the grid in order to achieve a barrier-free contact.
- a solar cell can be created in which a base plate, which is preferably made of glass, with an electrically conductive base, a cadmium sulfide layer and a copper sulfide layer forms a prefabricated lower part, which has an electrically conductive grid and a cover glass forming an upper part is joined to form an encapsulated cell.
- a base plate which is preferably made of glass
- an electrically conductive base a cadmium sulfide layer and a copper sulfide layer
- a copper sulfide layer forms a prefabricated lower part, which has an electrically conductive grid and a cover glass forming an upper part is joined to form an encapsulated cell.
- the cover glass with the grid and the base plate with the base are laterally offset from one another in such a way that a contact formed by the base and on the other side a contact formed by the grid are exposed.
- a solar cell is very easy to connect to other solar cells because the necessary contacts are created and freely accessible.
- a large cover glass with several in a row is arranged as the upper part electrically conductive grids are provided, each of which is assigned a lower part, which are arranged offset from the grids in such a way that the documents are in contact on one side with the grating associated with the adjacent lower part, and that on one side of the cover glass an edge of the outer Grid is exposed as a contact, while on the other side an edge of the base of the outer lower part is exposed as a contact.
- a large cover glass is provided with several rows of grids and accordingly with several rows of lower parts. A very efficient production is obtained, the somewhat simpler upper part taking up a large area, while the lower parts are designed as individually manufactured elements which are of a size which is favorable for the application of the cadmium sulfide layer.
- the solar cell shown in FIG. 1 has a prefabricated lower part 1 and a prefabricated upper part 2, which are assembled into a self-contained cell in a subsequent operation.
- the lower part 1 has a base plate 3, which preferably consists of a substrate glass. This glass is ultrasonically cleaned in a solvent before an adhesion-promoting layer 4 is applied on one side, for which vapor-deposited chromium (Cr) is preferably used. A layer 5 of silver (Ag) is also applied to this adhesion promoter by vapor deposition. This vapor deposition of both the adhesion promoter and the silver takes place at about 400 ° C., which on the one hand leads to a release of water vapor and on the other hand leads to good crystallization of the silver layer 5, which is advantageous for the subsequent operations.
- a base plate 3 which preferably consists of a substrate glass. This glass is ultrasonically cleaned in a solvent before an adhesion-promoting layer 4 is applied on one side, for which vapor-deposited chromium (Cr) is preferably used.
- Cr chromium
- a layer 5 of silver (Ag) is also applied to this adhesion promoter by vapor deposition. This
- CdS cadmium sulfide
- the cadmium sulfide layer 6 is roughened with an aqueous hydrochloric acid (HCl) to reduce reflection and to etch out grain boundaries.
- a copper sulfide (Cu 2 S) layer 7 is then produced on the cadmium sulfide layer 6, which is done by a chemical reaction by briefly immersing the lower part in a monovalent copper ion solution for about 5 to 10 seconds.
- This copper sulfide layer should have an order of magnitude of 0.2 ⁇ thickness.
- a copper (Cu) layer 8 which has a thickness of 30 to 100 ⁇ , is also evaporated onto the copper sulfide layer 7. Subsequently, the lower part is heated at about 180 ° under atmosphere, which enables filling of vacancies by copper diffusing into the copper sulfide layer and formation of a copper oxide layer (Cu 2 O). With this operation, the manufacture of the lower part 1 is finished. As can be seen from FIG. 1, the layers 6, 7 and 8 are applied in such a way that an edge strip 9 of the base 5 made of silver remains free in FIG. 1, which can later be used as a contact.
- the upper part 2 is also manufactured separately. It contains a cover glass 10, which is also cleaned with ultrasound in a solvent prior to further processing.
- a first liquid heat seal adhesive 11 with a layer thickness of 120 to 150 ⁇ is placed on this cover glass 10 on one side by means of a doctor or the like. applied.
- an adhesive from Kömmerling, Zweimaschiner Landstrasse, 6780 Pirmasens, which has the company identification AK 543, is suitable.
- the cover glass 10 and the initially applied heat-sealing adhesive 11 are then subjected to drying in a vacuum oven at about 100 ° C. for 4 to 5 hours, so that vapors and chamfers can escape from the initially liquid heat-sealing adhesive.
- the now finished upper part 2 is connected to the lower part 1 in a vacuum press at approx. 170 ° to 180 °, the connection being obtained by the layer 11 of the heat seal adhesive, which has a layer thickness which is somewhat larger than the thickness of the grid 12 .
- the grid 12 lies with its gold layer 13 on the layer 8 made of copper and establishes a secure contact, while subsequently the grid 12 penetrates into the layer 11 during heating, which also has an adhesive connection between the cover glass 10 and the layer 8 manufactures.
- the upper part 2 is applied so offset on the lower part 1 that on the left in the drawing, i.e. A strip 14 of the grid 12, which also serves as a contact, is exposed opposite the contact strip 9.
- a solar battery can be assembled from several of the solar cells shown in FIG. 1, the contacts of the adjacent solar cells formed by the edge strips 9 and 14 then being connected to one another.
- a common cover glass 15 can be provided for several solar cells, as shown in FIGS. 2 and 3.
- There- . at parts 1 are used, which were produced according to the preceding description. These bases are appropriately manufactured in a certain size in which they can be manufactured economically.
- the contacts between the individual solar cells are produced in the manner described for FIG. 1, which are only indicated schematically in FIG. 2. In this case, contact is made between the grid 12 and the layer 5 of silver serving as an electrically conductive base for those solar cells lying in a row. As can be seen in FIG.
- FIG. 4 schematically shows a device with which a homogeneous layer of cadmium sulfide can be evaporated onto a lower part 1 of a solar cell.
- a graphite furnace 16 is provided, which is surrounded by a graphite heating coil 17 to which a power supply 18 is connected.
- the outside of the graphite heating coil 17 is surrounded by a radiation reflector 19.
- a thermocouple 20 measuring the temperature for temperature control projects into the graphite furnace 16.
- the graphite furnace is seated on an insulating ceramic ring 21.
- the graphite furnace 16 has the shape of a cylinder, in which an upwardly open chamber 23 is divided by an annular collar 22, into which cadmium sulfide in powder form is filled.
- the chamber 23 is closed at the top by a porous quartz frit 24, which is closely connected to the ring collar 22 is fitted outward adjoining cylindrical part.
- the quartz frit 24 and the inner surface of the graphite furnace 16 are expediently ground.
- the quartz frit 24 is secured in its position in a manner not shown by one or more pins.
- the quartz frit 24 is arranged at a sufficient distance from the end of the graphite furnace 16, that is to say at about a third of the height, so that a temperature is maintained in the area of the quartz frit that is high enough to prevent the quartz frit from evaporating and becoming impermeable .
- thermocouple 20 adjoins the graphite furnace, which sits on the ceramic ring. This approach envelops the thermocouple 20 over a sufficient length, so that it is ensured that the temperature measured by the thermocouple 20 corresponds as closely as possible to the temperature of the chamber 23.
- a displaceable diaphragm 26 Arranged above the outlet of the graphite furnace 16 is a displaceable diaphragm 26, with which the evaporating gas from the lower part 1 of the solar cell can initially be maintained.
- This lower part 1 rests on a support 27, which leaves a section of the size to be vaporized on the lower part 1 with cadmium sulfide.
- a heating part 28 designed as a graphite meander is provided, which is covered by a radiation reflector 29. This heating part 28 ensures that the lower part of the solar cell maintains a temperature of approximately 200 ° C. when the cadmium sulfide is evaporated.
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2732933 | 1977-07-21 | ||
DE2732933A DE2732933C2 (de) | 1977-07-21 | 1977-07-21 | Verfahren zum Herstellen von Dünnschicht-Solarzellen mit pn-Heteroübergang |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0000715A1 true EP0000715A1 (fr) | 1979-02-21 |
EP0000715B1 EP0000715B1 (fr) | 1981-09-02 |
Family
ID=6014494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78100452A Expired EP0000715B1 (fr) | 1977-07-21 | 1978-07-20 | Procédé de fabrication de cellules solaires sulfure de cadmium-sulfure de cuivre et cellules solaires réalisées selon ce procédé |
Country Status (4)
Country | Link |
---|---|
US (1) | US4283590A (fr) |
EP (1) | EP0000715B1 (fr) |
AU (1) | AU519312B2 (fr) |
DE (1) | DE2732933C2 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024615A2 (fr) * | 1979-08-22 | 1981-03-11 | Ses, Incorporated | Electrode pour cellule photovoltaique et procédé pour sa fabrication |
EP0121869A1 (fr) * | 1983-04-02 | 1984-10-17 | Nukem GmbH | Procédé pour empêcher les courts-circuits ou les faux-contacts dans une cellule solaire à couches minces de grande surface |
WO1988003706A1 (fr) * | 1986-11-12 | 1988-05-19 | Hughes Aircraft Company | Systeme de cellule solaire a l'arseniure de gallium |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2926754A1 (de) * | 1979-07-03 | 1981-01-15 | Licentia Gmbh | Solarzellen-anordnung |
US4319258A (en) * | 1980-03-07 | 1982-03-09 | General Dynamics, Pomona Division | Schottky barrier photovoltaic detector |
US4400577A (en) * | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
EP0091998A1 (fr) * | 1982-03-08 | 1983-10-26 | Prutec Limited | Cellules solaires en sulfure de cadmium |
DE3328899C2 (de) * | 1983-08-10 | 1985-07-11 | Nukem Gmbh, 6450 Hanau | Photovoltaische Zelle |
DE3328869A1 (de) * | 1983-08-10 | 1985-02-28 | Nukem Gmbh, 6450 Hanau | Photovoltaische zelle und verfahren zum herstellen dieser |
US4616403A (en) * | 1984-08-31 | 1986-10-14 | Texas Instruments Incorporated | Configuration of a metal insulator semiconductor with a processor based gate |
US4673770A (en) * | 1985-10-21 | 1987-06-16 | Joseph Mandelkorn | Glass sealed silicon membrane solar cell |
IT1272665B (it) * | 1993-09-23 | 1997-06-26 | Eurosolare Spa | Procedimento per la preparazione di moduli fotovoltaici a base di silicio cristallino |
JP3516156B2 (ja) * | 1997-12-16 | 2004-04-05 | シャープ株式会社 | 太陽電池の製造方法および保護カバー用素材板 |
US5972732A (en) * | 1997-12-19 | 1999-10-26 | Sandia Corporation | Method of monolithic module assembly |
US8076568B2 (en) | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
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US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US7507903B2 (en) * | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
WO2014019560A1 (fr) | 2012-08-02 | 2014-02-06 | Dynamic Solar Systems Inc. | Photopile stratifiée améliorée |
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FR1562163A (fr) * | 1968-02-16 | 1969-04-04 | ||
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FR2156924A1 (fr) * | 1971-10-23 | 1973-06-01 | Licentia Gmbh |
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US3480473A (en) * | 1966-06-24 | 1969-11-25 | Kewanee Oil Co | Method of producing polycrystalline photovoltaic cells |
DE2112812C2 (de) * | 1971-03-17 | 1984-02-09 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiterbauelement mit gitterförmiger Metallelektrode und Verfahren zu dessen Herstellung |
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BE789331A (fr) * | 1971-09-28 | 1973-01-15 | Communications Satellite Corp | Cellule solaire a geometrie fine |
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GB1504854A (en) * | 1974-03-21 | 1978-03-22 | Int Research & Dev Co Ltd | Photodetectors and thin film photovoltaic arrays |
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- 1978-07-20 US US05/926,433 patent/US4283590A/en not_active Expired - Lifetime
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FR1446911A (fr) * | 1964-09-18 | 1966-07-22 | Ass Elect Ind | Perfectionnements aux procédés de production d'une couche de sulfure de cadmium |
US3472690A (en) * | 1967-02-09 | 1969-10-14 | Kewanee Oil Co | Process of preparing a flexible rear wall photovoltaic cell |
FR1562163A (fr) * | 1968-02-16 | 1969-04-04 | ||
FR2156924A1 (fr) * | 1971-10-23 | 1973-06-01 | Licentia Gmbh |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0024615A2 (fr) * | 1979-08-22 | 1981-03-11 | Ses, Incorporated | Electrode pour cellule photovoltaique et procédé pour sa fabrication |
EP0024615A3 (fr) * | 1979-08-22 | 1982-04-07 | Ses, Incorporated | Electrode pour cellule photovoltaique et procédé pour sa fabrication |
EP0121869A1 (fr) * | 1983-04-02 | 1984-10-17 | Nukem GmbH | Procédé pour empêcher les courts-circuits ou les faux-contacts dans une cellule solaire à couches minces de grande surface |
WO1988003706A1 (fr) * | 1986-11-12 | 1988-05-19 | Hughes Aircraft Company | Systeme de cellule solaire a l'arseniure de gallium |
Also Published As
Publication number | Publication date |
---|---|
DE2732933C2 (de) | 1984-11-15 |
DE2732933A1 (de) | 1979-02-08 |
US4283590A (en) | 1981-08-11 |
EP0000715B1 (fr) | 1981-09-02 |
AU519312B2 (en) | 1981-11-26 |
AU3810878A (en) | 1980-01-24 |
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