DK573588A - Fremgangsmaade til sloerfri polering af halvlederplader - Google Patents
Fremgangsmaade til sloerfri polering af halvlederpladerInfo
- Publication number
- DK573588A DK573588A DK573588A DK573588A DK573588A DK 573588 A DK573588 A DK 573588A DK 573588 A DK573588 A DK 573588A DK 573588 A DK573588 A DK 573588A DK 573588 A DK573588 A DK 573588A
- Authority
- DK
- Denmark
- Prior art keywords
- slool
- procedure
- semiconductor plates
- free polishing
- polishing
- Prior art date
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19873735158 DE3735158A1 (de) | 1987-10-16 | 1987-10-16 | Verfahren zum schleierfreien polieren von halbleiterscheiben |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DK573588D0 DK573588D0 (da) | 1988-10-14 |
| DK573588A true DK573588A (da) | 1989-04-17 |
Family
ID=6338517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK573588A DK573588A (da) | 1987-10-16 | 1988-10-14 | Fremgangsmaade til sloerfri polering af halvlederplader |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4968381A (da) |
| EP (1) | EP0311994B1 (da) |
| JP (1) | JPH077754B2 (da) |
| DE (2) | DE3735158A1 (da) |
| DK (1) | DK573588A (da) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3823765A1 (de) * | 1988-07-13 | 1990-01-18 | Wacker Chemitronic | Verfahren zur konservierung der oberflaeche von siliciumscheiben |
| US5078801A (en) * | 1990-08-14 | 1992-01-07 | Intel Corporation | Post-polish cleaning of oxidized substrates by reverse colloidation |
| US5409544A (en) * | 1990-08-20 | 1995-04-25 | Hitachi, Ltd. | Method of controlling adhesion of fine particles to an object in liquid |
| US5376222A (en) * | 1991-09-04 | 1994-12-27 | Fujitsu Limited | Polishing method for polycrystalline silicon |
| US5320706A (en) * | 1991-10-15 | 1994-06-14 | Texas Instruments Incorporated | Removing slurry residue from semiconductor wafer planarization |
| US5773403A (en) * | 1992-01-21 | 1998-06-30 | Olympus Optical Co., Ltd. | Cleaning and drying solvent |
| US5540810A (en) * | 1992-12-11 | 1996-07-30 | Micron Technology Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| JP2894153B2 (ja) * | 1993-05-27 | 1999-05-24 | 信越半導体株式会社 | シリコンウエーハの製造方法、およびその装置 |
| US5571373A (en) * | 1994-05-18 | 1996-11-05 | Memc Electronic Materials, Inc. | Method of rough polishing semiconductor wafers to reduce surface roughness |
| US6110820A (en) * | 1995-06-07 | 2000-08-29 | Micron Technology, Inc. | Low scratch density chemical mechanical planarization process |
| US5676587A (en) * | 1995-12-06 | 1997-10-14 | International Business Machines Corporation | Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride |
| DE19627748B4 (de) * | 1996-07-10 | 2006-04-20 | Heidelberger Druckmaschinen Ag | Reinigungseinrichtung an Druckmaschinen |
| US5896870A (en) * | 1997-03-11 | 1999-04-27 | International Business Machines Corporation | Method of removing slurry particles |
| US6022400A (en) * | 1997-05-22 | 2000-02-08 | Nippon Steel Corporation | Polishing abrasive grains, polishing agent and polishing method |
| US5934980A (en) * | 1997-06-09 | 1999-08-10 | Micron Technology, Inc. | Method of chemical mechanical polishing |
| US6592776B1 (en) * | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US5932493A (en) * | 1997-09-15 | 1999-08-03 | International Business Machines Corporaiton | Method to minimize watermarks on silicon substrates |
| US6143663A (en) * | 1998-01-22 | 2000-11-07 | Cypress Semiconductor Corporation | Employing deionized water and an abrasive surface to polish a semiconductor topography |
| US6200896B1 (en) * | 1998-01-22 | 2001-03-13 | Cypress Semiconductor Corporation | Employing an acidic liquid and an abrasive surface to polish a semiconductor topography |
| US6171180B1 (en) | 1998-03-31 | 2001-01-09 | Cypress Semiconductor Corporation | Planarizing a trench dielectric having an upper surface within a trench spaced below an adjacent polish stop surface |
| JP4163785B2 (ja) * | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
| JP4163788B2 (ja) * | 1998-06-25 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
| US6534378B1 (en) | 1998-08-31 | 2003-03-18 | Cypress Semiconductor Corp. | Method for forming an integrated circuit device |
| US6232231B1 (en) | 1998-08-31 | 2001-05-15 | Cypress Semiconductor Corporation | Planarized semiconductor interconnect topography and method for polishing a metal layer to form interconnect |
| TW476777B (en) * | 1998-08-31 | 2002-02-21 | Hitachi Chemical Co Ltd | Abrasive liquid for metal and method for polishing |
| US5972124A (en) * | 1998-08-31 | 1999-10-26 | Advanced Micro Devices, Inc. | Method for cleaning a surface of a dielectric material |
| US6566249B1 (en) | 1998-11-09 | 2003-05-20 | Cypress Semiconductor Corp. | Planarized semiconductor interconnect topography and method for polishing a metal layer to form wide interconnect structures |
| US6083840A (en) * | 1998-11-25 | 2000-07-04 | Arch Specialty Chemicals, Inc. | Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys |
| US6555466B1 (en) | 1999-03-29 | 2003-04-29 | Speedfam Corporation | Two-step chemical-mechanical planarization for damascene structures on semiconductor wafers |
| CA2378790A1 (en) * | 1999-08-13 | 2001-02-22 | Cabot Microelectronics Corporation | Polishing system and method of its use |
| EP1263906A1 (en) * | 2000-02-02 | 2002-12-11 | Rodel Holdings, Inc. | Polishing composition |
| DE10018338C1 (de) | 2000-04-13 | 2001-08-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe |
| JP2003533023A (ja) * | 2000-04-28 | 2003-11-05 | スリーエム イノベイティブ プロパティズ カンパニー | 半導体ウェハの表面を改質する方法 |
| KR100378180B1 (ko) * | 2000-05-22 | 2003-03-29 | 삼성전자주식회사 | 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법 |
| US6361407B1 (en) * | 2000-08-02 | 2002-03-26 | Memc Electronic Materials, Inc. | Method of polishing a semiconductor wafer |
| DE10058305A1 (de) | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
| DE10103062A1 (de) * | 2001-01-24 | 2002-08-01 | Promos Technologies Inc | Chemisch-mechanisches Polierverfahren für emulsionsfreie feste Schleifkissen |
| US6969684B1 (en) | 2001-04-30 | 2005-11-29 | Cypress Semiconductor Corp. | Method of making a planarized semiconductor structure |
| US20040132308A1 (en) * | 2001-10-24 | 2004-07-08 | Psiloquest, Inc. | Corrosion retarding polishing slurry for the chemical mechanical polishing of copper surfaces |
| US6828678B1 (en) | 2002-03-29 | 2004-12-07 | Silicon Magnetic Systems | Semiconductor topography with a fill material arranged within a plurality of valleys associated with the surface roughness of the metal layer |
| JP4749775B2 (ja) * | 2005-06-23 | 2011-08-17 | 山口精研工業株式会社 | ウェーハ研磨液組成物及びウェーハ研磨方法 |
| JP2007257810A (ja) | 2006-03-24 | 2007-10-04 | Hoya Corp | 磁気ディスク用ガラス基板の製造方法および磁気ディスクの製造方法 |
| WO2009096495A1 (ja) * | 2008-02-01 | 2009-08-06 | Fujimi Incorporated | 研磨用組成物及びそれを用いた研磨方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3485608A (en) * | 1968-01-02 | 1969-12-23 | Texas Instruments Inc | Slurry for polishing silicon slices |
| DE2247067C3 (de) * | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| US3979239A (en) * | 1974-12-30 | 1976-09-07 | Monsanto Company | Process for chemical-mechanical polishing of III-V semiconductor materials |
| DE2531431C3 (de) * | 1975-07-14 | 1979-03-01 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Poliermittel zur Herstellung schleierfreier Halbleiteroberflächen |
| DE2538855A1 (de) * | 1975-09-01 | 1977-03-10 | Wacker Chemitronic | Verfahren zur herstellung von schleierfreien halbleiteroberflaechen, insbesondere schleierfreien oberflaechen von (111)-orientiertem galliumarsenid |
| JPS5247369A (en) * | 1975-10-08 | 1977-04-15 | Du Pont | Method of polishing semiconductor materials |
| US4050954A (en) * | 1976-03-25 | 1977-09-27 | International Business Machines Corporation | Surface treatment of semiconductor substrates |
| JPS58145604A (ja) * | 1982-02-18 | 1983-08-30 | Nippon Telegr & Teleph Corp <Ntt> | リン化インジウムの研摩方法 |
| US4549374A (en) * | 1982-08-12 | 1985-10-29 | International Business Machines Corporation | Method for polishing semiconductor wafers with montmorillonite slurry |
| US4837923A (en) * | 1988-04-29 | 1989-06-13 | Magnetic Peripherals Inc. | Surface finishing for magnetic transducers |
-
1987
- 1987-10-16 DE DE19873735158 patent/DE3735158A1/de not_active Withdrawn
-
1988
- 1988-09-28 US US07/250,394 patent/US4968381A/en not_active Expired - Fee Related
- 1988-10-12 EP EP88116896A patent/EP0311994B1/de not_active Expired - Lifetime
- 1988-10-12 DE DE3853397T patent/DE3853397D1/de not_active Expired - Fee Related
- 1988-10-14 DK DK573588A patent/DK573588A/da not_active Application Discontinuation
- 1988-10-14 JP JP63257388A patent/JPH077754B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0311994A3 (en) | 1990-12-19 |
| DE3853397D1 (de) | 1995-04-27 |
| JPH077754B2 (ja) | 1995-01-30 |
| DE3735158A1 (de) | 1989-05-03 |
| EP0311994B1 (de) | 1995-03-22 |
| JPH01135026A (ja) | 1989-05-26 |
| DK573588D0 (da) | 1988-10-14 |
| EP0311994A2 (de) | 1989-04-19 |
| US4968381A (en) | 1990-11-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHB | Application shelved due to non-payment |