DK200300588A - Doteret halvlederskive af zonetrukket halvledermateriale samt fremgangsmåde til fremstilling af halvlederskiven - Google Patents

Doteret halvlederskive af zonetrukket halvledermateriale samt fremgangsmåde til fremstilling af halvlederskiven Download PDF

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Publication number
DK200300588A
DK200300588A DK200300588A DKPA200300588A DK200300588A DK 200300588 A DK200300588 A DK 200300588A DK 200300588 A DK200300588 A DK 200300588A DK PA200300588 A DKPA200300588 A DK PA200300588A DK 200300588 A DK200300588 A DK 200300588A
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DK
Denmark
Prior art keywords
semiconductor
disk
semiconductor disk
zone
drawn
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Application number
DK200300588A
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English (en)
Inventor
Knobel Rolf
Virbulis Janis
Ammon Wilfried Von
Grundner Manfred
Original Assignee
Wacker Siltronic Halbleitermat
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Application filed by Wacker Siltronic Halbleitermat filed Critical Wacker Siltronic Halbleitermat
Publication of DK200300588A publication Critical patent/DK200300588A/da
Application granted granted Critical
Publication of DK176922B1 publication Critical patent/DK176922B1/da

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/26—Stirring of the molten zone

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Description

PATENTKRAV: 1. Doteret halvlederskive af zonetrukket halvledermateriale, der indeholder et til en smeltemasse tilsat doteringsstof og har en radial makroskopisk modstandsfordeling på under 12% og striationer fra -10% til +10%. 2. Halvlederskive ifølge krav 1, kendetegnet ved en levetid af minoritetsladningsbærerne på mindst 100 psek. 3. Halvlederskive ifølge krav 1, kendetegnet ved en specifik modstand på 0,05 til 8000 Ohnvcm. 4. Fremgangsmåde til fremstilling af en doteret halvlederskive ved zonetrækning af en enkrystal og deling af enkrystallen, idet en med en induktionsspole dannet smeltemasse doteres med et doteringsstof og udsættes for mindst ét roterende magnetfelt og bringes til størkning, og den ved smeltemassens størkning voksende enkrystal drejes, idet enkrystallen og magnetfeltet drejes i modsat retning, og magnetfeltet har en frekvens fra 400 til 700 Hz. 5 Fremgangsmåde ifølge krav 4, kendetegnet ved, at magnetfeltet har en feltstyrke i området fra 1 til 20 mT. 6. Fremgangsmåde ifølge krav 4, kendetegnet ved, at enkrystallen drejes med en hastighed på mindst 1 omdrejning pr. minut. 7. Fremgangsmåde ifølge krav 4, kendetegnet ved, at magnetfeltet frembringes med et 6-polet magnetsystem. 8. Fremgangsmåde iføgle et af kravene 4 til 7, kendetegnet ved, at smeltemassen udsættes for et yderligere roterende magnetfelt, som roterer i samme eller modsat retning.
DKPA200300588A 2002-04-15 2003-04-15 Fremgangsmåde til fremstilling af en doteret halvlederskive ved zonetrækning af en enkrystal DK176922B1 (da)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10216609A DE10216609B4 (de) 2002-04-15 2002-04-15 Verfahren zur Herstellung der Halbleiterscheibe
DE10216609 2002-04-15

Publications (2)

Publication Number Publication Date
DK200300588A true DK200300588A (da) 2003-10-16
DK176922B1 DK176922B1 (da) 2010-05-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DKPA200300588A DK176922B1 (da) 2002-04-15 2003-04-15 Fremgangsmåde til fremstilling af en doteret halvlederskive ved zonetrækning af en enkrystal

Country Status (4)

Country Link
US (1) US7025827B2 (da)
JP (1) JP2003313087A (da)
DE (1) DE10216609B4 (da)
DK (1) DK176922B1 (da)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005016776B4 (de) 2005-04-06 2009-06-18 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd polygonalem Querschnitt
JP2007145629A (ja) * 2005-11-25 2007-06-14 Canon Machinery Inc 単結晶育成方法および装置
JP5485136B2 (ja) * 2007-04-13 2014-05-07 トップシル・セミコンダクター・マテリアルズ・アクティーゼルスカブ 単結晶を製造する方法及び装置
KR101020429B1 (ko) 2009-02-12 2011-03-08 주식회사 엘지실트론 비저항 특성이 균일한 단결정 제조방법 및 이 방법에 의해 제조된 단결정
CA2814843C (en) * 2010-10-25 2017-10-03 Lockheed Martin Corporation Sonar data collection system
JP2013103874A (ja) * 2011-11-11 2013-05-30 Yutaka Kamaike シリコンおよび製造方法
DE102012213506A1 (de) * 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium
US9093335B2 (en) * 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
CN103866375B (zh) * 2012-12-10 2016-02-24 有研半导体材料有限公司 一种掺杂区熔硅单晶的制备方法
DE102014226419A1 (de) 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
EP3208366A1 (en) 2016-02-16 2017-08-23 Siltronic AG Fz silicon and method to prepare fz silicon
JP6863240B2 (ja) * 2017-11-13 2021-04-21 株式会社Sumco シリコン単結晶の製造装置および製造方法
JP2022114134A (ja) * 2021-01-26 2022-08-05 信越半導体株式会社 単結晶引上げ装置および単結晶引上げ方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE263310C (da)
GB8805478D0 (en) * 1988-03-08 1988-04-07 Secr Defence Method & apparatus for growing semi-conductor crystalline materials
EP0504929B1 (en) * 1991-03-22 1996-08-28 Shin-Etsu Handotai Company Limited Method of growing silicon monocrystalline rod
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
JP2000082679A (ja) * 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
DE10051885B4 (de) * 2000-10-19 2007-07-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls durch Zonenziehen

Also Published As

Publication number Publication date
US20030192470A1 (en) 2003-10-16
JP2003313087A (ja) 2003-11-06
DE10216609A1 (de) 2003-10-30
DE10216609B4 (de) 2005-04-07
DK176922B1 (da) 2010-05-17
US7025827B2 (en) 2006-04-11

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