DE69936625D1 - Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters - Google Patents

Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters

Info

Publication number
DE69936625D1
DE69936625D1 DE69936625T DE69936625T DE69936625D1 DE 69936625 D1 DE69936625 D1 DE 69936625D1 DE 69936625 T DE69936625 T DE 69936625T DE 69936625 T DE69936625 T DE 69936625T DE 69936625 D1 DE69936625 D1 DE 69936625D1
Authority
DE
Germany
Prior art keywords
semiconductor
improvement
mechanical polishing
chemical mechanical
polishing process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69936625T
Other languages
English (en)
Other versions
DE69936625T2 (de
Inventor
Ronald Joseph Schutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of DE69936625D1 publication Critical patent/DE69936625D1/de
Application granted granted Critical
Publication of DE69936625T2 publication Critical patent/DE69936625T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69936625T 1998-12-17 1999-10-27 Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters Expired - Lifetime DE69936625T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US213469 1998-12-17
US09/213,469 US6136714A (en) 1998-12-17 1998-12-17 Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor

Publications (2)

Publication Number Publication Date
DE69936625D1 true DE69936625D1 (de) 2007-09-06
DE69936625T2 DE69936625T2 (de) 2008-01-31

Family

ID=22795239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69936625T Expired - Lifetime DE69936625T2 (de) 1998-12-17 1999-10-27 Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters

Country Status (7)

Country Link
US (1) US6136714A (de)
EP (1) EP1011131B1 (de)
JP (1) JP2000183004A (de)
KR (1) KR100693640B1 (de)
CN (1) CN1257305A (de)
DE (1) DE69936625T2 (de)
TW (1) TW466640B (de)

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US6274478B1 (en) * 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6573173B2 (en) 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
DE60039996D1 (de) * 1999-08-13 2008-10-02 Cabot Microelectronics Corp Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung
US6656842B2 (en) 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
US6458289B1 (en) 1999-10-06 2002-10-01 Agere Systems Guardian Corp. CMP slurry for polishing semiconductor wafers and related methods
US6436830B1 (en) * 1999-10-06 2002-08-20 Agere Systems Guardian Corp. CMP system for polishing semiconductor wafers and related method
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6881674B2 (en) * 1999-12-28 2005-04-19 Intel Corporation Abrasives for chemical mechanical polishing
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6858540B2 (en) * 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP2002164307A (ja) 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6350692B1 (en) 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
KR100407296B1 (ko) * 2000-12-18 2003-11-28 주식회사 하이닉스반도체 티타늄알루미늄나이트라이드의 화학적기계적연마 방법
US7012025B2 (en) * 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6482732B1 (en) * 2001-06-29 2002-11-19 Oki Electric Industry Co., Ltd. Method and apparatus for polishing semiconductor wafer
US6790768B2 (en) 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) * 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
US6805812B2 (en) 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
JP4010903B2 (ja) * 2002-08-02 2007-11-21 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7037174B2 (en) * 2002-10-03 2006-05-02 Applied Materials, Inc. Methods for reducing delamination during chemical mechanical polishing
WO2004072332A1 (ja) * 2003-02-12 2004-08-26 Ebara Corporation 研磨液、研磨方法及び研磨装置
USPP17182P3 (en) * 2003-10-02 2006-11-07 Plantas De Navarra S.A. Peach tree plant named ‘Plawhite 5’
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
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US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US20070254558A1 (en) * 2004-08-27 2007-11-01 Masako Kodera Polishing Apparatus and Polishing Method
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JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
ATE463763T1 (de) * 2004-12-10 2010-04-15 Mallinckrodt Baker Inc Wasserfreie nicht korrosive mikroelektronische reinigungsverbindungen mit polymerischen corrosionsinhibitoren
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
FR2898906B1 (fr) * 2006-03-21 2008-05-16 Kemesys Composition de polissage mecano chimique incluant un alkylxanthate, procede de preparation et utilisation
US20100273330A1 (en) * 2006-08-23 2010-10-28 Citibank N.A. As Collateral Agent Rinse formulation for use in the manufacture of an integrated circuit
JP2008074990A (ja) * 2006-09-22 2008-04-03 Nihon Micro Coating Co Ltd 研磨スラリー及び方法
TWI446425B (zh) * 2007-08-29 2014-07-21 Applied Materials Inc 高生產量及低表面形貌的銅化學機械研磨製程
JP5379441B2 (ja) * 2008-10-09 2013-12-25 関東化学株式会社 基板処理用アルカリ性水溶液組成物
JP5767898B2 (ja) * 2011-08-12 2015-08-26 株式会社東芝 半導体装置の製造方法
CN103474395B (zh) * 2013-09-13 2016-08-24 华进半导体封装先导技术研发中心有限公司 一种tsv平坦化方法
KR102544643B1 (ko) * 2015-12-23 2023-06-19 솔브레인 주식회사 연마 슬러리 조성물 및 이를 이용한 연마방법
KR101698168B1 (ko) * 2016-06-02 2017-01-20 에버테크노 주식회사 Agv를 이용한 번인 랙 이송장치

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Also Published As

Publication number Publication date
JP2000183004A (ja) 2000-06-30
KR100693640B1 (ko) 2007-03-14
TW466640B (en) 2001-12-01
KR20000048170A (ko) 2000-07-25
US6136714A (en) 2000-10-24
DE69936625T2 (de) 2008-01-31
EP1011131B1 (de) 2007-07-25
CN1257305A (zh) 2000-06-21
EP1011131A1 (de) 2000-06-21

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE

8364 No opposition during term of opposition