DE69936625D1 - Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters - Google Patents
Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines HalbleitersInfo
- Publication number
- DE69936625D1 DE69936625D1 DE69936625T DE69936625T DE69936625D1 DE 69936625 D1 DE69936625 D1 DE 69936625D1 DE 69936625 T DE69936625 T DE 69936625T DE 69936625 T DE69936625 T DE 69936625T DE 69936625 D1 DE69936625 D1 DE 69936625D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- improvement
- mechanical polishing
- chemical mechanical
- polishing process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002184 metal Substances 0.000 title 1
- 238000007517 polishing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US213469 | 1998-12-17 | ||
US09/213,469 US6136714A (en) | 1998-12-17 | 1998-12-17 | Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69936625D1 true DE69936625D1 (de) | 2007-09-06 |
DE69936625T2 DE69936625T2 (de) | 2008-01-31 |
Family
ID=22795239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69936625T Expired - Lifetime DE69936625T2 (de) | 1998-12-17 | 1999-10-27 | Verbesserung der Metallentfernung bei einem chemisch-mechanischen Polierprozess eines Halbleiters |
Country Status (7)
Country | Link |
---|---|
US (1) | US6136714A (de) |
EP (1) | EP1011131B1 (de) |
JP (1) | JP2000183004A (de) |
KR (1) | KR100693640B1 (de) |
CN (1) | CN1257305A (de) |
DE (1) | DE69936625T2 (de) |
TW (1) | TW466640B (de) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6896826B2 (en) * | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6068879A (en) * | 1997-08-26 | 2000-05-30 | Lsi Logic Corporation | Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing |
SG73683A1 (en) | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
JP4516176B2 (ja) * | 1999-04-20 | 2010-08-04 | 関東化学株式会社 | 電子材料用基板洗浄液 |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
US6573173B2 (en) | 1999-07-13 | 2003-06-03 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
US6855266B1 (en) * | 1999-08-13 | 2005-02-15 | Cabot Microelectronics Corporation | Polishing system with stopping compound and method of its use |
DE60039996D1 (de) * | 1999-08-13 | 2008-10-02 | Cabot Microelectronics Corp | Chemisch-mechanische poliersysteme und verfahren zu ihrer verwendung |
US6656842B2 (en) | 1999-09-22 | 2003-12-02 | Applied Materials, Inc. | Barrier layer buffing after Cu CMP |
US6458289B1 (en) | 1999-10-06 | 2002-10-01 | Agere Systems Guardian Corp. | CMP slurry for polishing semiconductor wafers and related methods |
US6436830B1 (en) * | 1999-10-06 | 2002-08-20 | Agere Systems Guardian Corp. | CMP system for polishing semiconductor wafers and related method |
US6368955B1 (en) * | 1999-11-22 | 2002-04-09 | Lucent Technologies, Inc. | Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities |
US6638143B2 (en) | 1999-12-22 | 2003-10-28 | Applied Materials, Inc. | Ion exchange materials for chemical mechanical polishing |
US6881674B2 (en) * | 1999-12-28 | 2005-04-19 | Intel Corporation | Abrasives for chemical mechanical polishing |
JP2001269859A (ja) * | 2000-03-27 | 2001-10-02 | Jsr Corp | 化学機械研磨用水系分散体 |
US6858540B2 (en) * | 2000-05-11 | 2005-02-22 | Applied Materials, Inc. | Selective removal of tantalum-containing barrier layer during metal CMP |
US6524167B1 (en) | 2000-10-27 | 2003-02-25 | Applied Materials, Inc. | Method and composition for the selective removal of residual materials and barrier materials during substrate planarization |
US6709316B1 (en) * | 2000-10-27 | 2004-03-23 | Applied Materials, Inc. | Method and apparatus for two-step barrier layer polishing |
JP2002164307A (ja) | 2000-11-24 | 2002-06-07 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
US6350692B1 (en) | 2000-12-14 | 2002-02-26 | Infineon Technologies Ag | Increased polish removal rate of dielectric layers using fixed abrasive pads |
KR100407296B1 (ko) * | 2000-12-18 | 2003-11-28 | 주식회사 하이닉스반도체 | 티타늄알루미늄나이트라이드의 화학적기계적연마 방법 |
US7012025B2 (en) * | 2001-01-05 | 2006-03-14 | Applied Materials Inc. | Tantalum removal during chemical mechanical polishing |
US6783432B2 (en) | 2001-06-04 | 2004-08-31 | Applied Materials Inc. | Additives for pressure sensitive polishing compositions |
US6482732B1 (en) * | 2001-06-29 | 2002-11-19 | Oki Electric Industry Co., Ltd. | Method and apparatus for polishing semiconductor wafer |
US6790768B2 (en) | 2001-07-11 | 2004-09-14 | Applied Materials Inc. | Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects |
US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
US7008554B2 (en) * | 2001-07-13 | 2006-03-07 | Applied Materials, Inc. | Dual reduced agents for barrier removal in chemical mechanical polishing |
US6821881B2 (en) * | 2001-07-25 | 2004-11-23 | Applied Materials, Inc. | Method for chemical mechanical polishing of semiconductor substrates |
US6805812B2 (en) | 2001-10-11 | 2004-10-19 | Cabot Microelectronics Corporation | Phosphono compound-containing polishing composition and method of using same |
JP4010903B2 (ja) * | 2002-08-02 | 2007-11-21 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US7037174B2 (en) * | 2002-10-03 | 2006-05-02 | Applied Materials, Inc. | Methods for reducing delamination during chemical mechanical polishing |
WO2004072332A1 (ja) * | 2003-02-12 | 2004-08-26 | Ebara Corporation | 研磨液、研磨方法及び研磨装置 |
USPP17182P3 (en) * | 2003-10-02 | 2006-11-07 | Plantas De Navarra S.A. | Peach tree plant named ‘Plawhite 5’ |
US20050076579A1 (en) * | 2003-10-10 | 2005-04-14 | Siddiqui Junaid Ahmed | Bicine/tricine containing composition and method for chemical-mechanical planarization |
US7390744B2 (en) | 2004-01-29 | 2008-06-24 | Applied Materials, Inc. | Method and composition for polishing a substrate |
US7253111B2 (en) * | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
US20050252547A1 (en) * | 2004-05-11 | 2005-11-17 | Applied Materials, Inc. | Methods and apparatus for liquid chemical delivery |
US20070254558A1 (en) * | 2004-08-27 | 2007-11-01 | Masako Kodera | Polishing Apparatus and Polishing Method |
US20070205112A1 (en) * | 2004-08-27 | 2007-09-06 | Masako Kodera | Polishing apparatus and polishing method |
JP4027929B2 (ja) * | 2004-11-30 | 2007-12-26 | 花王株式会社 | 半導体基板用研磨液組成物 |
ATE463763T1 (de) * | 2004-12-10 | 2010-04-15 | Mallinckrodt Baker Inc | Wasserfreie nicht korrosive mikroelektronische reinigungsverbindungen mit polymerischen corrosionsinhibitoren |
WO2006125462A1 (en) * | 2005-05-25 | 2006-11-30 | Freescale Semiconductor, Inc | Cleaning solution for a semiconductor wafer |
KR20070041330A (ko) * | 2005-10-14 | 2007-04-18 | 가오가부시끼가이샤 | 반도체 기판용 연마액 조성물 |
FR2898906B1 (fr) * | 2006-03-21 | 2008-05-16 | Kemesys | Composition de polissage mecano chimique incluant un alkylxanthate, procede de preparation et utilisation |
US20100273330A1 (en) * | 2006-08-23 | 2010-10-28 | Citibank N.A. As Collateral Agent | Rinse formulation for use in the manufacture of an integrated circuit |
JP2008074990A (ja) * | 2006-09-22 | 2008-04-03 | Nihon Micro Coating Co Ltd | 研磨スラリー及び方法 |
TWI446425B (zh) * | 2007-08-29 | 2014-07-21 | Applied Materials Inc | 高生產量及低表面形貌的銅化學機械研磨製程 |
JP5379441B2 (ja) * | 2008-10-09 | 2013-12-25 | 関東化学株式会社 | 基板処理用アルカリ性水溶液組成物 |
JP5767898B2 (ja) * | 2011-08-12 | 2015-08-26 | 株式会社東芝 | 半導体装置の製造方法 |
CN103474395B (zh) * | 2013-09-13 | 2016-08-24 | 华进半导体封装先导技术研发中心有限公司 | 一种tsv平坦化方法 |
KR102544643B1 (ko) * | 2015-12-23 | 2023-06-19 | 솔브레인 주식회사 | 연마 슬러리 조성물 및 이를 이용한 연마방법 |
KR101698168B1 (ko) * | 2016-06-02 | 2017-01-20 | 에버테크노 주식회사 | Agv를 이용한 번인 랙 이송장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
JP3397501B2 (ja) * | 1994-07-12 | 2003-04-14 | 株式会社東芝 | 研磨剤および研磨方法 |
JPH0982668A (ja) * | 1995-09-20 | 1997-03-28 | Sony Corp | 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法 |
US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
US5858813A (en) * | 1996-05-10 | 1999-01-12 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers and films |
KR100257427B1 (ko) * | 1996-05-31 | 2000-05-15 | 아사무라 타카싯 | 반도체기판표면을연마하여평탄한표면형상을형성하기위한반도체기판연마방법 |
US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
US5735963A (en) * | 1996-12-17 | 1998-04-07 | Lucent Technologies Inc. | Method of polishing |
US6001269A (en) * | 1997-05-20 | 1999-12-14 | Rodel, Inc. | Method for polishing a composite comprising an insulator, a metal, and titanium |
-
1998
- 1998-12-17 US US09/213,469 patent/US6136714A/en not_active Expired - Lifetime
-
1999
- 1999-10-27 DE DE69936625T patent/DE69936625T2/de not_active Expired - Lifetime
- 1999-10-27 EP EP99121400A patent/EP1011131B1/de not_active Expired - Lifetime
- 1999-10-28 TW TW088118683A patent/TW466640B/zh not_active IP Right Cessation
- 1999-12-16 KR KR1019990058140A patent/KR100693640B1/ko not_active IP Right Cessation
- 1999-12-16 CN CN99126529A patent/CN1257305A/zh active Pending
- 1999-12-17 JP JP11359334A patent/JP2000183004A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2000183004A (ja) | 2000-06-30 |
KR100693640B1 (ko) | 2007-03-14 |
TW466640B (en) | 2001-12-01 |
KR20000048170A (ko) | 2000-07-25 |
US6136714A (en) | 2000-10-24 |
DE69936625T2 (de) | 2008-01-31 |
EP1011131B1 (de) | 2007-07-25 |
CN1257305A (zh) | 2000-06-21 |
EP1011131A1 (de) | 2000-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
8364 | No opposition during term of opposition |