DE69933396D1 - Optische halbleitervorrichtung - Google Patents
Optische halbleitervorrichtungInfo
- Publication number
- DE69933396D1 DE69933396D1 DE69933396T DE69933396T DE69933396D1 DE 69933396 D1 DE69933396 D1 DE 69933396D1 DE 69933396 T DE69933396 T DE 69933396T DE 69933396 T DE69933396 T DE 69933396T DE 69933396 D1 DE69933396 D1 DE 69933396D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optical semiconductor
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
- H01S5/2013—MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9827492 | 1998-12-15 | ||
GB9827492A GB2344932A (en) | 1998-12-15 | 1998-12-15 | Semiconductor Laser with gamma and X electron barriers |
PCT/JP1999/007053 WO2000036719A1 (en) | 1998-12-15 | 1999-12-15 | An optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69933396D1 true DE69933396D1 (de) | 2006-11-09 |
DE69933396T2 DE69933396T2 (de) | 2007-08-23 |
Family
ID=10844188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69933396T Expired - Fee Related DE69933396T2 (de) | 1998-12-15 | 1999-12-15 | Optische halbleitervorrichtung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6785311B1 (de) |
EP (1) | EP1147584B1 (de) |
JP (1) | JP2002532908A (de) |
KR (1) | KR100463972B1 (de) |
DE (1) | DE69933396T2 (de) |
GB (1) | GB2344932A (de) |
TW (1) | TW461164B (de) |
WO (1) | WO2000036719A1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6628694B2 (en) * | 2001-04-23 | 2003-09-30 | Agilent Technologies, Inc. | Reliability-enhancing layers for vertical cavity surface emitting lasers |
US6901096B2 (en) * | 2002-12-20 | 2005-05-31 | Finisar Corporation | Material system for Bragg reflectors in long wavelength VCSELs |
US6931044B2 (en) * | 2003-02-18 | 2005-08-16 | Agilent Technologies, Inc. | Method and apparatus for improving temperature performance for GaAsSb/GaAs devices |
KR20050073740A (ko) * | 2004-01-10 | 2005-07-18 | 삼성전자주식회사 | 이중 장벽층을 구비하는 양자우물 구조체를 포함하는반도체 소자 및 이를 채용한 반도체 레이저 및 그 제조 방법 |
WO2005101532A1 (ja) * | 2004-04-16 | 2005-10-27 | Nitride Semiconductors Co., Ltd. | 窒化ガリウム系発光装置 |
JP4943052B2 (ja) * | 2006-04-27 | 2012-05-30 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置、画像形成装置及び光通信システム |
US8890113B2 (en) * | 2011-06-08 | 2014-11-18 | Nikolay Ledentsov | Optoelectronic device with a wide bandgap and method of making same |
DE102012107795B4 (de) | 2012-08-23 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und optoelektronischer Halbleiterchip |
US11973316B2 (en) * | 2018-03-28 | 2024-04-30 | Sony Corporation | Vertical cavity surface emitting laser element and electronic apparatus |
US11228160B2 (en) * | 2018-11-15 | 2022-01-18 | Sharp Kabushiki Kaisha | AlGaInPAs-based semiconductor laser device and method for producing same |
CN113948967B (zh) * | 2021-12-21 | 2022-03-15 | 苏州长光华芯光电技术股份有限公司 | 一种半导体结构及其制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0728080B2 (ja) * | 1984-09-25 | 1995-03-29 | 日本電気株式会社 | 半導体超格子構造体 |
JPH0666519B2 (ja) * | 1986-08-14 | 1994-08-24 | 東京工業大学長 | 超格子構造体 |
CA2055208C (en) * | 1990-11-09 | 2000-07-04 | Michinori Irikawa | A quatum barrier semiconductor optical device |
JP3135960B2 (ja) * | 1991-12-20 | 2001-02-19 | シャープ株式会社 | 半導体レーザ装置 |
JPH05243676A (ja) * | 1992-02-28 | 1993-09-21 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH06326406A (ja) * | 1993-03-18 | 1994-11-25 | Fuji Xerox Co Ltd | 半導体レーザ装置 |
JPH07147449A (ja) * | 1993-11-25 | 1995-06-06 | Mitsubishi Electric Corp | 多重量子障壁構造,及び可視光半導体レーザダイオード |
US5509024A (en) * | 1994-11-28 | 1996-04-16 | Xerox Corporation | Diode laser with tunnel barrier layer |
US5557627A (en) * | 1995-05-19 | 1996-09-17 | Sandia Corporation | Visible-wavelength semiconductor lasers and arrays |
EP0835541B1 (de) * | 1996-04-24 | 2001-10-17 | Uniphase Opto Holdings, Inc. | Strahlungsemittierende halbleiterdiode und deren herstellungsverfahren |
GB2320609A (en) * | 1996-12-21 | 1998-06-24 | Sharp Kk | Semiconductor laser device |
GB2320610A (en) * | 1996-12-21 | 1998-06-24 | Sharp Kk | laser device |
GB2353899A (en) * | 1999-09-01 | 2001-03-07 | Sharp Kk | A quantum well semiconductor device with strained barrier layer |
-
1998
- 1998-12-15 GB GB9827492A patent/GB2344932A/en not_active Withdrawn
-
1999
- 1999-12-15 WO PCT/JP1999/007053 patent/WO2000036719A1/en active IP Right Grant
- 1999-12-15 EP EP99959836A patent/EP1147584B1/de not_active Expired - Lifetime
- 1999-12-15 KR KR10-2001-7007509A patent/KR100463972B1/ko not_active IP Right Cessation
- 1999-12-15 US US09/857,936 patent/US6785311B1/en not_active Expired - Fee Related
- 1999-12-15 JP JP2000588869A patent/JP2002532908A/ja not_active Withdrawn
- 1999-12-15 DE DE69933396T patent/DE69933396T2/de not_active Expired - Fee Related
- 1999-12-15 TW TW088121986A patent/TW461164B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100463972B1 (ko) | 2005-01-03 |
US6785311B1 (en) | 2004-08-31 |
DE69933396T2 (de) | 2007-08-23 |
GB2344932A (en) | 2000-06-21 |
WO2000036719A1 (en) | 2000-06-22 |
GB9827492D0 (en) | 1999-02-10 |
JP2002532908A (ja) | 2002-10-02 |
KR20010082349A (ko) | 2001-08-29 |
EP1147584A1 (de) | 2001-10-24 |
TW461164B (en) | 2001-10-21 |
EP1147584B1 (de) | 2006-09-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69937926D1 (de) | Optische Schalteinrichtung | |
DE69908294D1 (de) | Optische schaltvorrichtung | |
DE60037616D1 (de) | Optische Querverbindungsvorrichtung | |
DE69937641D1 (de) | Optische bauelemente | |
DE60039403D1 (de) | Optische Vorrichtung | |
DE69801375D1 (de) | Integrierte optische schaltung | |
DE69724757D1 (de) | Optische Polarisationsvorrichtung | |
DE59805839D1 (de) | Optische detektoreinrichtung | |
DE60036049D1 (de) | Optische vorrichtung | |
DE60003985D1 (de) | Autofokusvorrichtung | |
DE69920823D1 (de) | Photographisches Gerät | |
DE19882819T1 (de) | Optische Empfangsvorrichtung | |
DE69932563D1 (de) | Optische Abtastvorrichtung | |
DE60032338D1 (de) | Optische nachrichrenübertragungsvorrichtung | |
DE69839961D1 (de) | Optische querverbindungsvorrichtung | |
DE60027949D1 (de) | Optische Halbleitervorrichtung | |
DE69920653D1 (de) | Halbleiterlaservorrichtung | |
DE50009478D1 (de) | Optische modulationseinrichtung | |
DE69930584D1 (de) | Optische Abtastvorrichtung | |
DE69905622D1 (de) | Optische vorrichtung | |
DE69934144D1 (de) | Optische messvorrichtung | |
DE69933396D1 (de) | Optische halbleitervorrichtung | |
DE69833672D1 (de) | Optische abtastvorrichtung | |
DE19882818T1 (de) | Optische Empfangsvorrichtung | |
DE69902759D1 (de) | Optische verbindungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |