DE69930999D1 - Nichtflüchtiger Halbleiter-Speicher - Google Patents

Nichtflüchtiger Halbleiter-Speicher

Info

Publication number
DE69930999D1
DE69930999D1 DE69930999T DE69930999T DE69930999D1 DE 69930999 D1 DE69930999 D1 DE 69930999D1 DE 69930999 T DE69930999 T DE 69930999T DE 69930999 T DE69930999 T DE 69930999T DE 69930999 D1 DE69930999 D1 DE 69930999D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69930999T
Other languages
English (en)
Other versions
DE69930999T2 (de
Inventor
Akira Yoneyama
Yoshinobu Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of DE69930999D1 publication Critical patent/DE69930999D1/de
Application granted granted Critical
Publication of DE69930999T2 publication Critical patent/DE69930999T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69930999T 1998-08-27 1999-08-18 Nichtflüchtiger Halbleiter-Speicher Expired - Lifetime DE69930999T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP24229798 1998-08-27
JP24229998 1998-08-27
JP24229798 1998-08-27
JP24229998 1998-08-27

Publications (2)

Publication Number Publication Date
DE69930999D1 true DE69930999D1 (de) 2006-06-01
DE69930999T2 DE69930999T2 (de) 2006-09-07

Family

ID=26535705

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69930999T Expired - Lifetime DE69930999T2 (de) 1998-08-27 1999-08-18 Nichtflüchtiger Halbleiter-Speicher

Country Status (5)

Country Link
US (1) US6349061B1 (de)
EP (1) EP0982737B1 (de)
KR (1) KR100365872B1 (de)
DE (1) DE69930999T2 (de)
TW (1) TW446876B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4421615B2 (ja) * 2004-12-24 2010-02-24 スパンション エルエルシー 記憶装置のバイアス印加方法、および記憶装置
KR100865824B1 (ko) * 2006-10-31 2008-10-28 주식회사 하이닉스반도체 메모리 소자 및 리페어 방법
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US9251864B2 (en) * 2012-09-06 2016-02-02 Infineon Technologies Ag System and method for providing voltage supply protection in a memory device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0447595A (ja) * 1990-06-15 1992-02-17 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2738195B2 (ja) * 1991-12-27 1998-04-08 日本電気株式会社 不揮発性半導体記憶装置
US5608676A (en) * 1993-08-31 1997-03-04 Crystal Semiconductor Corporation Current limited current reference for non-volatile memory sensing
US5442586A (en) * 1993-09-10 1995-08-15 Intel Corporation Method and apparatus for controlling the output current provided by a charge pump circuit
US5550772A (en) * 1995-02-13 1996-08-27 National Semiconductor Corporation Memory array utilizing multi-state memory cells
EP0757356B1 (de) 1995-07-31 2001-06-06 STMicroelectronics S.r.l. Flash-EEPROM mit gesteuerter Entladungszeit der Wortleitungs- und Sourcespannungen nach der Löschung
EP0786778B1 (de) * 1996-01-24 2003-11-12 STMicroelectronics S.r.l. Verfahren zum Löschen einer elektrisch programmierbaren und löschbaren nichtflüchtigen Speicherzelle
US5663907A (en) 1996-04-25 1997-09-02 Bright Microelectronics, Inc. Switch driver circuit for providing small sector sizes for negative gate erase flash EEPROMS using a standard twin-well CMOS process
JPH09320282A (ja) * 1996-05-27 1997-12-12 Sharp Corp 不揮発性半導体記憶装置の消去制御方法
US5732021A (en) 1996-07-19 1998-03-24 Smayling; Michael C. Programmable and convertible non-volatile memory array
KR100232190B1 (ko) * 1996-10-01 1999-12-01 김영환 비휘발성 메모리장치
JPH10326494A (ja) * 1997-03-24 1998-12-08 Seiko Epson Corp 半導体記憶装置
JP3600054B2 (ja) * 1998-02-24 2004-12-08 三洋電機株式会社 不揮発性半導体メモリ装置
KR100371022B1 (ko) * 1998-11-26 2003-07-16 주식회사 하이닉스반도체 다중비트 메모리셀의 데이터 센싱장치

Also Published As

Publication number Publication date
TW446876B (en) 2001-07-21
US6349061B1 (en) 2002-02-19
KR20000017543A (ko) 2000-03-25
EP0982737A3 (de) 2000-05-17
EP0982737B1 (de) 2006-04-26
KR100365872B1 (ko) 2002-12-26
DE69930999T2 (de) 2006-09-07
EP0982737A2 (de) 2000-03-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition