DE69836851D1 - Homogenisierapparat für einen optischen Strahl, Verfahren und Vorrichtung zur Laserbeleuchtung, und Halbleiterbauelement - Google Patents
Homogenisierapparat für einen optischen Strahl, Verfahren und Vorrichtung zur Laserbeleuchtung, und HalbleiterbauelementInfo
- Publication number
- DE69836851D1 DE69836851D1 DE69836851T DE69836851T DE69836851D1 DE 69836851 D1 DE69836851 D1 DE 69836851D1 DE 69836851 T DE69836851 T DE 69836851T DE 69836851 T DE69836851 T DE 69836851T DE 69836851 D1 DE69836851 D1 DE 69836851D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optical beam
- laser illumination
- beam homogenizer
- homogenizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02592—Microstructure amorphous
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0905—Dividing and/or superposing multiple light beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0966—Cylindrical lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0972—Prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
- Mechanical Optical Scanning Systems (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28256697 | 1997-09-30 | ||
JP28256697A JP3462053B2 (ja) | 1997-09-30 | 1997-09-30 | ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69836851D1 true DE69836851D1 (de) | 2007-02-22 |
DE69836851T2 DE69836851T2 (de) | 2007-11-15 |
Family
ID=17654159
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69839631T Expired - Lifetime DE69839631D1 (de) | 1997-09-30 | 1998-09-30 | Strahlenhomogenisator, Laserbestrahlungsvorrichtung und verfahren sowie Halbleiterbauelement |
DE69836851T Expired - Lifetime DE69836851T2 (de) | 1997-09-30 | 1998-09-30 | Homogenisierapparat für einen optischen Strahl, Verfahren und Vorrichtung zur Laserbeleuchtung, und Halbleiterbauelement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69839631T Expired - Lifetime DE69839631D1 (de) | 1997-09-30 | 1998-09-30 | Strahlenhomogenisator, Laserbestrahlungsvorrichtung und verfahren sowie Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (3) | US6002523A (de) |
EP (2) | EP0905540B1 (de) |
JP (1) | JP3462053B2 (de) |
DE (2) | DE69839631D1 (de) |
Families Citing this family (98)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09234579A (ja) * | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
JPH10253916A (ja) * | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | レーザー光学装置 |
JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
JP3462053B2 (ja) * | 1997-09-30 | 2003-11-05 | 株式会社半導体エネルギー研究所 | ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス |
JPH11186189A (ja) | 1997-12-17 | 1999-07-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
DE19819333A1 (de) * | 1998-04-30 | 1999-11-04 | Lissotschenko Vitaly | Optisches Emitter-Array mit Kollimationsoptik |
US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
JP4663047B2 (ja) | 1998-07-13 | 2011-03-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置及び半導体装置の作製方法 |
EP1744349A3 (de) | 1998-10-05 | 2007-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren, Strahlhomogenisierer und Herstellungsverfahren für ein Halbleiterbauelement |
US6535535B1 (en) | 1999-02-12 | 2003-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and semiconductor device |
US6393042B1 (en) | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
JP4588153B2 (ja) * | 1999-03-08 | 2010-11-24 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
JP4403599B2 (ja) * | 1999-04-19 | 2010-01-27 | ソニー株式会社 | 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP4827276B2 (ja) | 1999-07-05 | 2011-11-30 | 株式会社半導体エネルギー研究所 | レーザー照射装置、レーザー照射方法及び半導体装置の作製方法 |
JP3422290B2 (ja) | 1999-07-22 | 2003-06-30 | 日本電気株式会社 | 半導体薄膜の製造方法 |
US7160765B2 (en) * | 1999-08-13 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
US6567219B1 (en) | 1999-08-13 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
TW473783B (en) * | 1999-08-13 | 2002-01-21 | Semiconductor Energy Lab | Laser apparatus, laser annealing method, and manufacturing method of a semiconductor device |
US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
US6856630B2 (en) * | 2000-02-02 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device |
JP4651772B2 (ja) * | 2000-02-29 | 2011-03-16 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
US6830993B1 (en) * | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
US7078321B2 (en) | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
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DE10049557B4 (de) * | 2000-10-06 | 2004-09-02 | Microlas Lasersystem Gmbh | Vorrichtung zum Umwandeln der Intensitätsverteilung eines Laserstrahls |
US7115503B2 (en) | 2000-10-10 | 2006-10-03 | The Trustees Of Columbia University In The City Of New York | Method and apparatus for processing thin metal layers |
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JP2003059858A (ja) * | 2001-08-09 | 2003-02-28 | Sony Corp | レーザアニール装置及び薄膜トランジスタの製造方法 |
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KR20050047103A (ko) * | 2002-08-19 | 2005-05-19 | 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 | 다양한 조사 패턴을 포함하는 원 샷 반도체 가공 시스템 및방법 |
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JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
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US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
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WO2005029547A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
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WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
US7311778B2 (en) * | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
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JP4817639B2 (ja) * | 2004-10-14 | 2011-11-16 | キヤノン株式会社 | 照明光学系及びそれを用いた画像表示装置 |
WO2006046495A1 (en) * | 2004-10-27 | 2006-05-04 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
EP1708008B1 (de) * | 2005-04-01 | 2011-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Strahlhomogenisator und Laserbestrahlungsvorrichtung |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
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1998
- 1998-09-29 US US09/163,296 patent/US6002523A/en not_active Expired - Lifetime
- 1998-09-30 DE DE69839631T patent/DE69839631D1/de not_active Expired - Lifetime
- 1998-09-30 EP EP98307941A patent/EP0905540B1/de not_active Expired - Lifetime
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1999
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2001
- 2001-07-23 US US09/912,054 patent/US6512634B2/en not_active Expired - Lifetime
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US20010053030A1 (en) | 2001-12-20 |
EP0905540B1 (de) | 2007-01-10 |
EP1736813B1 (de) | 2008-06-18 |
US6310727B1 (en) | 2001-10-30 |
DE69839631D1 (de) | 2008-07-31 |
US6002523A (en) | 1999-12-14 |
DE69836851T2 (de) | 2007-11-15 |
EP0905540A2 (de) | 1999-03-31 |
US6512634B2 (en) | 2003-01-28 |
JP3462053B2 (ja) | 2003-11-05 |
EP0905540A3 (de) | 2001-04-04 |
EP1736813A1 (de) | 2006-12-27 |
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