DE69820397D1 - Ätzmittel und ihre Verwendung - Google Patents
Ätzmittel und ihre VerwendungInfo
- Publication number
- DE69820397D1 DE69820397D1 DE69820397T DE69820397T DE69820397D1 DE 69820397 D1 DE69820397 D1 DE 69820397D1 DE 69820397 T DE69820397 T DE 69820397T DE 69820397 T DE69820397 T DE 69820397T DE 69820397 D1 DE69820397 D1 DE 69820397D1
- Authority
- DE
- Germany
- Prior art keywords
- etchants
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0041—Photosensitive materials providing an etching agent upon exposure
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D9/00—Chemical paint or ink removers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- C11D2111/22—
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97575597A | 1997-11-21 | 1997-11-21 | |
US975755 | 1997-11-21 | ||
US137179 | 1998-08-20 | ||
US09/137,179 US6630074B1 (en) | 1997-04-04 | 1998-08-20 | Etching composition and use thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69820397D1 true DE69820397D1 (de) | 2004-01-22 |
DE69820397T2 DE69820397T2 (de) | 2004-10-28 |
Family
ID=26834992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69820397T Expired - Lifetime DE69820397T2 (de) | 1997-11-21 | 1998-10-12 | Ätzmittel und ihre Verwendung |
Country Status (8)
Country | Link |
---|---|
US (1) | US6630074B1 (de) |
EP (1) | EP0918081B1 (de) |
JP (1) | JP3181264B2 (de) |
KR (1) | KR100334346B1 (de) |
CN (1) | CN1180459C (de) |
DE (1) | DE69820397T2 (de) |
HK (1) | HK1019774A1 (de) |
TW (1) | TW570971B (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030209514A1 (en) * | 1997-04-04 | 2003-11-13 | Infineon Technologies North America Corp. | Etching composition and use thereof with feedback control of HF in BEOL clean |
US20050217707A1 (en) * | 1998-03-13 | 2005-10-06 | Aegerter Brian K | Selective processing of microelectronic workpiece surfaces |
US6664196B1 (en) | 1999-03-15 | 2003-12-16 | Matsushita Electric Industrial Co., Ltd. | Method of cleaning electronic device and method of fabricating the same |
TW589685B (en) * | 2000-07-14 | 2004-06-01 | Infineon Technologies Corp | Etching composition and use thereof with feedback control of HF in BEOL clean |
TW527443B (en) * | 2000-07-28 | 2003-04-11 | Infineon Technologies Corp | Etching composition and use thereof with feedback control of HF in BEOL clean |
US6692976B1 (en) * | 2000-08-31 | 2004-02-17 | Agilent Technologies, Inc. | Post-etch cleaning treatment |
DE10063600A1 (de) * | 2000-12-20 | 2002-07-04 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Enstellen einer vorgegebenen HF-Konzentration in einem Reinigungsbad für Wafer |
JP4678665B2 (ja) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
DE10208120A1 (de) * | 2002-02-26 | 2003-09-18 | Schloetter Fa Dr Ing Max | Verfahren zur Metallisierung von Keramik auf Basis von Titanaten |
JP3688650B2 (ja) | 2002-03-26 | 2005-08-31 | 株式会社東芝 | 電子デバイスの製造方法 |
CN1326638C (zh) * | 2002-07-19 | 2007-07-18 | 上海华虹(集团)有限公司 | 一种去除硅化物形成过程中多余金属的方法 |
US7169323B2 (en) * | 2002-11-08 | 2007-01-30 | 3M Innovative Properties Company | Fluorinated surfactants for buffered acid etch solutions |
KR100505044B1 (ko) * | 2002-12-17 | 2005-07-29 | 삼성전자주식회사 | 세정액 및 이를 이용한 반도체 장치의 세정방법 |
TWI304439B (en) * | 2003-01-30 | 2008-12-21 | Merck Kanto Advanced Chemical | Solution for removal residue of post dry etch |
US20040163681A1 (en) * | 2003-02-25 | 2004-08-26 | Applied Materials, Inc. | Dilute sulfuric peroxide at point-of-use |
KR20050011510A (ko) * | 2003-07-23 | 2005-01-29 | 동부전자 주식회사 | 반도체 공정의 폴리머 제거용 에천트 |
JP4326928B2 (ja) * | 2003-12-09 | 2009-09-09 | 株式会社東芝 | フォトレジスト残渣除去液組成物及び該組成物を用いる半導体回路素子の製造方法 |
JP4859355B2 (ja) * | 2004-08-13 | 2012-01-25 | セイコーエプソン株式会社 | トレンチ素子分離構造の形成方法、半導体基板および半導体装置 |
JP4776191B2 (ja) * | 2004-08-25 | 2011-09-21 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法 |
US7718009B2 (en) * | 2004-08-30 | 2010-05-18 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
JP4728826B2 (ja) * | 2006-02-07 | 2011-07-20 | 株式会社東芝 | 半導体装置の製造方法およびエッチング液 |
KR100815188B1 (ko) * | 2006-06-29 | 2008-03-19 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 및 이를 이용한 낸드 플래시메모리 소자의 제조방법 |
US20080083427A1 (en) * | 2006-10-09 | 2008-04-10 | Semitool, Inc. | Post etch residue removal from substrates |
JP4642001B2 (ja) | 2006-10-24 | 2011-03-02 | 関東化学株式会社 | フォトレジスト残渣及びポリマー残渣除去液組成物 |
CN101303987B (zh) * | 2007-05-11 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
CN101393843B (zh) * | 2007-09-20 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | 离子注入后的清洗方法 |
JP5360703B2 (ja) * | 2008-01-11 | 2013-12-04 | メック株式会社 | エッチング液 |
CN102107196B (zh) * | 2009-12-23 | 2013-02-13 | 北大方正集团有限公司 | 一种清洗半导体中的聚合物的方法 |
US20130099330A1 (en) * | 2011-10-25 | 2013-04-25 | Intermolecular, Inc. | Controllable Undercut Etching of Tin Metal Gate Using DSP+ |
US8545639B2 (en) * | 2011-10-31 | 2013-10-01 | Lam Research Corporation | Method of cleaning aluminum plasma chamber parts |
CN103515295B (zh) * | 2012-06-26 | 2015-09-02 | 中芯国际集成电路制造(上海)有限公司 | 通孔的处理方法 |
CN103087718B (zh) * | 2013-01-16 | 2014-12-31 | 四川大学 | 湿法刻蚀镍酸镧薄膜和铁电薄膜/镍酸镧复合薄膜的腐蚀液及其制备方法 |
US9252053B2 (en) | 2014-01-16 | 2016-02-02 | International Business Machines Corporation | Self-aligned contact structure |
CN105087184A (zh) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 清洗试剂、清洗半导体器件中刻蚀残留物的方法及金属互连层的制作方法 |
KR102124328B1 (ko) | 2019-12-11 | 2020-06-18 | 와이엠티 주식회사 | 구리 금속 표면의 밀착 향상용 미세 조도 형성 조성물 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5497546A (en) * | 1978-01-20 | 1979-08-01 | Fujitsu Ltd | Etching method of permalloy thin layer |
JP2787788B2 (ja) * | 1990-09-26 | 1998-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 残留物除去方法 |
US5082518A (en) * | 1990-10-29 | 1992-01-21 | Submicron Systems, Inc. | Sparger plate for ozone gas diffusion |
KR0124484B1 (ko) * | 1993-03-23 | 1997-12-10 | 모리시다 요이치 | 반도체 장치의 세정방법 및 그 장치 |
WO1994027314A1 (en) * | 1993-05-13 | 1994-11-24 | Interuniversitair Microelektronica Centrum | Method for semiconductor processing using mixtures of hf and carboxylic acid |
JP3407086B2 (ja) * | 1994-06-17 | 2003-05-19 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置の製造方法 |
TW296405B (en) * | 1996-02-12 | 1997-01-21 | Merck Kanto Advanced Chemical | Solution and process for removing side-wall residue after dry etching |
US6605230B1 (en) * | 1996-03-22 | 2003-08-12 | Merck Patent Gmbh | Solutions and processes for removal of sidewall residue after dry etching |
US5700740A (en) * | 1996-03-25 | 1997-12-23 | Taiwan Semiconductor Manufacturing Company Ltd | Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species |
US5780363A (en) * | 1997-04-04 | 1998-07-14 | International Business Machines Coporation | Etching composition and use thereof |
-
1998
- 1998-08-20 US US09/137,179 patent/US6630074B1/en not_active Expired - Fee Related
- 1998-10-12 EP EP98308276A patent/EP0918081B1/de not_active Expired - Lifetime
- 1998-10-12 DE DE69820397T patent/DE69820397T2/de not_active Expired - Lifetime
- 1998-11-16 JP JP32532998A patent/JP3181264B2/ja not_active Expired - Lifetime
- 1998-11-20 KR KR1019980049923A patent/KR100334346B1/ko not_active IP Right Cessation
- 1998-11-20 CN CNB981265189A patent/CN1180459C/zh not_active Expired - Lifetime
-
1999
- 1999-01-04 TW TW087119174A patent/TW570971B/zh not_active IP Right Cessation
- 1999-10-28 HK HK99104858A patent/HK1019774A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0918081A1 (de) | 1999-05-26 |
HK1019774A1 (en) | 2000-02-25 |
KR100334346B1 (ko) | 2002-08-22 |
CN1180459C (zh) | 2004-12-15 |
KR19990045461A (ko) | 1999-06-25 |
JPH11243085A (ja) | 1999-09-07 |
US6630074B1 (en) | 2003-10-07 |
DE69820397T2 (de) | 2004-10-28 |
JP3181264B2 (ja) | 2001-07-03 |
TW570971B (en) | 2004-01-11 |
EP0918081B1 (de) | 2003-12-10 |
CN1227279A (zh) | 1999-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE Owner name: INTERNATIONAL BUSINESS MACHINES CORP., ARMONK,, US |