DE69801612D1 - Nichtflüchtiger Halbleiterspeicher und Verfahren zur Herstellung - Google Patents
Nichtflüchtiger Halbleiterspeicher und Verfahren zur HerstellungInfo
- Publication number
- DE69801612D1 DE69801612D1 DE69801612T DE69801612T DE69801612D1 DE 69801612 D1 DE69801612 D1 DE 69801612D1 DE 69801612 T DE69801612 T DE 69801612T DE 69801612 T DE69801612 T DE 69801612T DE 69801612 D1 DE69801612 D1 DE 69801612D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor memory
- volatile semiconductor
- volatile
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9143126A JPH10316495A (ja) | 1997-05-16 | 1997-05-16 | 強誘電体およびメモリ素子ならびにそれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69801612D1 true DE69801612D1 (de) | 2001-10-18 |
DE69801612T2 DE69801612T2 (de) | 2002-06-20 |
Family
ID=15331529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801612T Expired - Fee Related DE69801612T2 (de) | 1997-05-16 | 1998-05-14 | Nichtflüchtiger Halbleiterspeicher und Verfahren zur Herstellung |
Country Status (6)
Country | Link |
---|---|
US (2) | US6171871B1 (de) |
EP (1) | EP0878847B1 (de) |
JP (1) | JPH10316495A (de) |
KR (1) | KR19980087104A (de) |
DE (1) | DE69801612T2 (de) |
TW (1) | TW408399B (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3907921B2 (ja) * | 2000-06-19 | 2007-04-18 | 富士通株式会社 | 半導体装置の製造方法 |
US20030124324A1 (en) * | 2001-11-27 | 2003-07-03 | Kappler Safety Group | Breathable blood and viral barrier fabric |
US6621683B1 (en) * | 2002-09-19 | 2003-09-16 | Infineon Technologies Aktiengesellschaft | Memory cells with improved reliability |
WO2005122260A1 (ja) * | 2004-06-11 | 2005-12-22 | Fujitsu Limited | 容量素子、集積回路および電子装置 |
WO2015141626A1 (ja) | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 半導体装置、半導体装置の製造方法、および、強誘電体膜 |
KR20180097378A (ko) | 2017-02-23 | 2018-08-31 | 에스케이하이닉스 주식회사 | 강유전성 메모리 장치 및 그 제조 방법 |
US10923501B2 (en) | 2017-02-23 | 2021-02-16 | SK Hynix Inc. | Ferroelectric memory device and method of manufacturing the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4714848A (en) * | 1987-03-02 | 1987-12-22 | The United States Of America As Represented By The United States Department Of Energy | Electrically induced mechanical precompression of ferroelectric plates |
JPH0451022A (ja) * | 1990-06-18 | 1992-02-19 | Mitsubishi Gas Chem Co Inc | 液晶の配向法 |
US5155658A (en) | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
JPH05289081A (ja) * | 1992-04-06 | 1993-11-05 | Idemitsu Kosan Co Ltd | 強誘電性液晶素子配向修復方法 |
US5607632A (en) * | 1995-05-30 | 1997-03-04 | Rockwell International Corporation | Method of fabricating PLZT piezoelectric ceramics |
JP3188179B2 (ja) * | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
JP3478012B2 (ja) | 1995-09-29 | 2003-12-10 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
US5998910A (en) * | 1997-01-28 | 1999-12-07 | The Penn State Research Foundation | Relaxor ferroelectric single crystals for ultrasound transducers |
-
1997
- 1997-05-16 JP JP9143126A patent/JPH10316495A/ja active Pending
-
1998
- 1998-04-30 TW TW087106678A patent/TW408399B/zh not_active IP Right Cessation
- 1998-05-14 DE DE69801612T patent/DE69801612T2/de not_active Expired - Fee Related
- 1998-05-14 US US09/078,678 patent/US6171871B1/en not_active Expired - Fee Related
- 1998-05-14 EP EP98108834A patent/EP0878847B1/de not_active Expired - Lifetime
- 1998-05-15 KR KR1019980017555A patent/KR19980087104A/ko not_active Application Discontinuation
-
1999
- 1999-10-29 US US09/430,479 patent/US20020130337A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR19980087104A (ko) | 1998-12-05 |
EP0878847A1 (de) | 1998-11-18 |
TW408399B (en) | 2000-10-11 |
US6171871B1 (en) | 2001-01-09 |
US20020130337A1 (en) | 2002-09-19 |
EP0878847B1 (de) | 2001-09-12 |
JPH10316495A (ja) | 1998-12-02 |
DE69801612T2 (de) | 2002-06-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |