DE69737783D1 - Verfahren zur Herstellung eines Halbleiterspeicherbauteils - Google Patents

Verfahren zur Herstellung eines Halbleiterspeicherbauteils

Info

Publication number
DE69737783D1
DE69737783D1 DE69737783T DE69737783T DE69737783D1 DE 69737783 D1 DE69737783 D1 DE 69737783D1 DE 69737783 T DE69737783 T DE 69737783T DE 69737783 T DE69737783 T DE 69737783T DE 69737783 D1 DE69737783 D1 DE 69737783D1
Authority
DE
Germany
Prior art keywords
manufacturing
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69737783T
Other languages
English (en)
Other versions
DE69737783T2 (de
Inventor
Hyo-Dong Ban
Hyun-Cheol Choe
Chang-Sik Choi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019960050492A external-priority patent/KR100200748B1/ko
Priority claimed from KR1019960069320A external-priority patent/KR100230396B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69737783D1 publication Critical patent/DE69737783D1/de
Publication of DE69737783T2 publication Critical patent/DE69737783T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69737783T 1996-10-30 1997-10-29 Verfahren zur Herstellung eines Halbleiterspeicherbauteils Expired - Lifetime DE69737783T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR9650492 1996-10-30
KR1019960050492A KR100200748B1 (ko) 1996-10-30 1996-10-30 반도체장치의 제조방법
KR9669320 1996-12-20
KR1019960069320A KR100230396B1 (en) 1996-12-20 1996-12-20 Semiconductor device making method

Publications (2)

Publication Number Publication Date
DE69737783D1 true DE69737783D1 (de) 2007-07-19
DE69737783T2 DE69737783T2 (de) 2008-02-28

Family

ID=26632242

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69737783T Expired - Lifetime DE69737783T2 (de) 1996-10-30 1997-10-29 Verfahren zur Herstellung eines Halbleiterspeicherbauteils

Country Status (7)

Country Link
US (2) US6071802A (de)
EP (3) EP1684343A3 (de)
JP (2) JPH10135333A (de)
CN (2) CN1123927C (de)
DE (1) DE69737783T2 (de)
RU (1) RU2190897C2 (de)
TW (1) TW405236B (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649308B1 (en) * 1998-03-30 2003-11-18 Texas Instruments-Acer Incorporated Ultra-short channel NMOSFETS with self-aligned silicide contact
US6342419B1 (en) * 1999-04-19 2002-01-29 Taiwan Semiconductor Manufacturing Co., Ltd. DRAM capacitor and a method of fabricating the same
KR100351890B1 (ko) * 1999-05-08 2002-09-12 주식회사 하이닉스반도체 반도체 소자의 플러그층 형성 방법
KR100334393B1 (ko) * 1999-06-30 2002-05-03 박종섭 반도체소자의 제조방법
TW417245B (en) * 1999-07-16 2001-01-01 Taiwan Semiconductor Mfg Method of producing bitline
KR100331848B1 (ko) * 1999-07-20 2002-04-09 박종섭 반도체 소자의 콘택 패드 형성 방법
KR100366620B1 (ko) * 1999-09-02 2003-01-09 삼성전자 주식회사 자기정합 콘택을 갖는 반도체 메모리장치 및 그 제조방법
JP2001102550A (ja) * 1999-09-02 2001-04-13 Samsung Electronics Co Ltd 自己整合コンタクトを有する半導体メモリ装置及びその製造方法
JP4667551B2 (ja) * 1999-10-19 2011-04-13 ルネサスエレクトロニクス株式会社 半導体装置
US20050026412A1 (en) * 2000-06-16 2005-02-03 Drynan John M. Interconnect line selectively isolated from an underlying contact plug
US6511879B1 (en) 2000-06-16 2003-01-28 Micron Technology, Inc. Interconnect line selectively isolated from an underlying contact plug
KR100343148B1 (ko) * 2000-11-10 2002-07-06 윤종용 반도체 소자의 콘택패드 형성방법
JP2002319632A (ja) * 2001-04-20 2002-10-31 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002319551A (ja) * 2001-04-23 2002-10-31 Nec Corp 半導体装置およびその製造方法
US6861698B2 (en) * 2002-01-24 2005-03-01 Silicon Storage Technology, Inc. Array of floating gate memory cells having strap regions and a peripheral logic device region
KR100583118B1 (ko) * 2003-12-19 2006-05-23 주식회사 하이닉스반도체 반도체 소자의 캐패시터 형성방법
JP2007294618A (ja) * 2006-04-24 2007-11-08 Elpida Memory Inc 半導体装置の製造方法及び半導体装置
US7709367B2 (en) * 2006-06-30 2010-05-04 Hynix Semiconductor Inc. Method for fabricating storage node contact in semiconductor device
US7666343B2 (en) * 2006-10-18 2010-02-23 Polymer Group, Inc. Process and apparatus for producing sub-micron fibers, and nonwovens and articles containing same
JP2007158370A (ja) * 2007-01-31 2007-06-21 Oki Electric Ind Co Ltd 窒化膜サイドウォール付きゲートを有する半導体装置の製造方法
JP2010080798A (ja) * 2008-09-29 2010-04-08 Renesas Technology Corp 半導体集積回路装置および半導体集積回路装置の製造方法
JP5268618B2 (ja) * 2008-12-18 2013-08-21 株式会社東芝 半導体装置
KR20110120695A (ko) * 2010-04-29 2011-11-04 삼성전자주식회사 반도체 소자
JP5127907B2 (ja) * 2010-11-11 2013-01-23 ルネサスエレクトロニクス株式会社 半導体装置
US8440533B2 (en) * 2011-03-04 2013-05-14 Globalfoundries Singapore Pte. Ltd. Self-aligned contact for replacement metal gate and silicide last processes
JP5858952B2 (ja) * 2013-05-20 2016-02-10 三菱電機株式会社 半導体装置の製造方法
US9716160B2 (en) 2014-08-01 2017-07-25 International Business Machines Corporation Extended contact area using undercut silicide extensions
US9431455B2 (en) * 2014-11-09 2016-08-30 Tower Semiconductor, Ltd. Back-end processing using low-moisture content oxide cap layer
US9379194B2 (en) * 2014-11-09 2016-06-28 Tower Semiconductor Ltd. Floating gate NVM with low-moisture-content oxide cap layer
CN106847670A (zh) * 2017-02-14 2017-06-13 上海华虹宏力半导体制造有限公司 半导体器件的制造方法
US11996297B2 (en) * 2021-08-06 2024-05-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61156883A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置の製造方法
US5235199A (en) * 1988-03-25 1993-08-10 Kabushiki Kaisha Toshiba Semiconductor memory with pad electrode and bit line under stacked capacitor
JP3199717B2 (ja) * 1989-09-08 2001-08-20 株式会社東芝 半導体装置およびその製造方法
JPH04181769A (ja) * 1990-11-15 1992-06-29 Matsushita Electric Ind Co Ltd 半導体記憶装置およびその製造方法
US5137842A (en) * 1991-05-10 1992-08-11 Micron Technology, Inc. Stacked H-cell capacitor and process to fabricate same
US5296400A (en) * 1991-12-14 1994-03-22 Hyundai Electronics Industries Co., Ltd. Method of manufacturing a contact of a highly integrated semiconductor device
KR950000660B1 (ko) * 1992-02-29 1995-01-27 현대전자산업 주식회사 고집적 소자용 미세콘택 형성방법
US5292677A (en) * 1992-09-18 1994-03-08 Micron Technology, Inc. Reduced mask CMOS process for fabricating stacked capacitor multi-megabit dynamic random access memories utilizing single etch stop layer for contacts
KR940016805A (ko) * 1992-12-31 1994-07-25 김주용 반도체 소자의 적층 캐패시터 제조 방법
US5340763A (en) * 1993-02-12 1994-08-23 Micron Semiconductor, Inc. Multi-pin stacked capacitor utilizing micro villus patterning in a container cell and method to fabricate same
KR0161731B1 (ko) * 1994-10-28 1999-02-01 김주용 반도체소자의 미세콘택 형성방법
US5858865A (en) * 1995-12-07 1999-01-12 Micron Technology, Inc. Method of forming contact plugs
US6015986A (en) * 1995-12-22 2000-01-18 Micron Technology, Inc. Rugged metal electrodes for metal-insulator-metal capacitors

Also Published As

Publication number Publication date
EP0840371B1 (de) 2007-06-06
TW405236B (en) 2000-09-11
EP0840371A3 (de) 2005-02-16
CN1123927C (zh) 2003-10-08
EP1684343A3 (de) 2010-03-03
EP1684343A2 (de) 2006-07-26
US6316803B1 (en) 2001-11-13
DE69737783T2 (de) 2008-02-28
EP1684342A2 (de) 2006-07-26
CN1200457C (zh) 2005-05-04
CN1181628A (zh) 1998-05-13
JP3236001B2 (ja) 2001-12-04
RU2190897C2 (ru) 2002-10-10
EP1684342B1 (de) 2011-06-01
CN1426101A (zh) 2003-06-25
JP2000323573A (ja) 2000-11-24
EP1684342A3 (de) 2010-03-03
JPH10135333A (ja) 1998-05-22
US6071802A (en) 2000-06-06
EP0840371A2 (de) 1998-05-06

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