DE69737172D1 - Herstellungsverfahren für einen Feldeffekttransistor mit isoliertem Gate - Google Patents
Herstellungsverfahren für einen Feldeffekttransistor mit isoliertem GateInfo
- Publication number
- DE69737172D1 DE69737172D1 DE69737172T DE69737172T DE69737172D1 DE 69737172 D1 DE69737172 D1 DE 69737172D1 DE 69737172 T DE69737172 T DE 69737172T DE 69737172 T DE69737172 T DE 69737172T DE 69737172 D1 DE69737172 D1 DE 69737172D1
- Authority
- DE
- Germany
- Prior art keywords
- fabricating
- field effect
- effect transistor
- insulated gate
- gate field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US688346 | 1996-07-30 | ||
US08/688,346 US5824580A (en) | 1996-07-30 | 1996-07-30 | Method of manufacturing an insulated gate field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69737172D1 true DE69737172D1 (de) | 2007-02-15 |
DE69737172T2 DE69737172T2 (de) | 2008-01-03 |
Family
ID=24764062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69737172T Expired - Lifetime DE69737172T2 (de) | 1996-07-30 | 1997-07-15 | Herstellungsverfahren für einen Feldeffekttransistor mit isoliertem Gate |
Country Status (8)
Country | Link |
---|---|
US (1) | US5824580A (de) |
EP (1) | EP0822593B1 (de) |
JP (1) | JP3422660B2 (de) |
KR (1) | KR100242409B1 (de) |
CN (1) | CN1086513C (de) |
DE (1) | DE69737172T2 (de) |
SG (1) | SG50863A1 (de) |
TW (1) | TW353808B (de) |
Families Citing this family (36)
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WO1999067817A1 (en) | 1998-06-22 | 1999-12-29 | Applied Materials, Inc. | Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion |
US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
EP1077475A3 (de) | 1999-08-11 | 2003-04-02 | Applied Materials, Inc. | Verfahren zur Mikrobearbeitung einer Körperhölung mit mehrfachem Profil |
DE19956078B4 (de) * | 1999-11-22 | 2006-12-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines Isolationskragens in einem Grabenkondensators |
KR100545699B1 (ko) * | 1999-12-30 | 2006-01-24 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 콘택용 플러그 형성방법 |
US6833079B1 (en) | 2000-02-17 | 2004-12-21 | Applied Materials Inc. | Method of etching a shaped cavity |
US6509233B2 (en) * | 2000-10-13 | 2003-01-21 | Siliconix Incorporated | Method of making trench-gated MOSFET having cesium gate oxide layer |
US6559030B1 (en) * | 2001-12-13 | 2003-05-06 | International Business Machines Corporation | Method of forming a recessed polysilicon filled trench |
TWI305667B (en) * | 2002-10-25 | 2009-01-21 | Nanya Technology Corp | Process for filling polysilicon seam |
CN1299337C (zh) * | 2003-04-29 | 2007-02-07 | 旺宏电子股份有限公司 | 用于非易失性存储器的氧-氮-氧介电层制造方法 |
US6903011B2 (en) * | 2003-06-05 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Displacement method to grow cu overburden |
JP2006093506A (ja) * | 2004-09-27 | 2006-04-06 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置およびその製造方法 |
US7518179B2 (en) | 2004-10-08 | 2009-04-14 | Freescale Semiconductor, Inc. | Virtual ground memory array and method therefor |
KR100744068B1 (ko) * | 2005-04-29 | 2007-07-30 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 제조 방법 |
US7642594B2 (en) * | 2005-07-25 | 2010-01-05 | Freescale Semiconductor, Inc | Electronic device including gate lines, bit lines, or a combination thereof |
US7205608B2 (en) * | 2005-07-25 | 2007-04-17 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
US7582929B2 (en) * | 2005-07-25 | 2009-09-01 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements |
US7285819B2 (en) * | 2005-07-25 | 2007-10-23 | Freescale Semiconductor, Inc. | Nonvolatile storage array with continuous control gate employing hot carrier injection programming |
US7314798B2 (en) * | 2005-07-25 | 2008-01-01 | Freescale Semiconductor, Inc. | Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming |
US7256454B2 (en) * | 2005-07-25 | 2007-08-14 | Freescale Semiconductor, Inc | Electronic device including discontinuous storage elements and a process for forming the same |
US7262997B2 (en) * | 2005-07-25 | 2007-08-28 | Freescale Semiconductor, Inc. | Process for operating an electronic device including a memory array and conductive lines |
US7226840B2 (en) * | 2005-07-25 | 2007-06-05 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
US7250340B2 (en) * | 2005-07-25 | 2007-07-31 | Freescale Semiconductor, Inc. | Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench |
US7619270B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Electronic device including discontinuous storage elements |
US20070020840A1 (en) * | 2005-07-25 | 2007-01-25 | Freescale Semiconductor, Inc. | Programmable structure including nanocrystal storage elements in a trench |
US7112490B1 (en) * | 2005-07-25 | 2006-09-26 | Freescale Semiconductor, Inc. | Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench |
US7394686B2 (en) * | 2005-07-25 | 2008-07-01 | Freescale Semiconductor, Inc. | Programmable structure including discontinuous storage elements and spacer control gates in a trench |
US7619275B2 (en) * | 2005-07-25 | 2009-11-17 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
US7211487B2 (en) * | 2005-07-25 | 2007-05-01 | Freescale Semiconductor, Inc. | Process for forming an electronic device including discontinuous storage elements |
US7592224B2 (en) | 2006-03-30 | 2009-09-22 | Freescale Semiconductor, Inc | Method of fabricating a storage device including decontinuous storage elements within and between trenches |
US7572699B2 (en) * | 2007-01-24 | 2009-08-11 | Freescale Semiconductor, Inc | Process of forming an electronic device including fins and discontinuous storage elements |
US7838922B2 (en) * | 2007-01-24 | 2010-11-23 | Freescale Semiconductor, Inc. | Electronic device including trenches and discontinuous storage elements |
US7651916B2 (en) * | 2007-01-24 | 2010-01-26 | Freescale Semiconductor, Inc | Electronic device including trenches and discontinuous storage elements and processes of forming and using the same |
KR100973276B1 (ko) * | 2008-06-27 | 2010-07-30 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
CN102315153A (zh) * | 2010-07-06 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件浅沟隔离结构的制作方法 |
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US3868793A (en) * | 1973-06-18 | 1975-03-04 | Norton Co | Internally safety reinforced cup grinding wheel |
JPS6043024B2 (ja) * | 1978-12-30 | 1985-09-26 | 富士通株式会社 | 半導体装置の製造方法 |
US4356211A (en) * | 1980-12-19 | 1982-10-26 | International Business Machines Corporation | Forming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysilicon |
IT1211079B (it) * | 1981-07-20 | 1989-09-29 | Sibit S P A Ora Tioxide Italia | Catalizzatori per reazioni di ossido-riduzione fotoassistite. |
JPS58220445A (ja) * | 1982-06-16 | 1983-12-22 | Toshiba Corp | 半導体集積回路の製造方法 |
US4797373A (en) * | 1984-10-31 | 1989-01-10 | Texas Instruments Incorporated | Method of making dRAM cell with trench capacitor |
US5164325A (en) * | 1987-10-08 | 1992-11-17 | Siliconix Incorporated | Method of making a vertical current flow field effect transistor |
US4986878A (en) * | 1988-07-19 | 1991-01-22 | Cypress Semiconductor Corp. | Process for improved planarization of the passivation layers for semiconductor devices |
KR910007181B1 (ko) * | 1988-09-22 | 1991-09-19 | 현대전자산업 주식회사 | Sdtas구조로 이루어진 dram셀 및 그 제조방법 |
US4954854A (en) * | 1989-05-22 | 1990-09-04 | International Business Machines Corporation | Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
US4989055A (en) * | 1989-06-15 | 1991-01-29 | Texas Instruments Incorporated | Dynamic random access memory cell |
US5078801A (en) * | 1990-08-14 | 1992-01-07 | Intel Corporation | Post-polish cleaning of oxidized substrates by reverse colloidation |
US5358894A (en) * | 1992-02-06 | 1994-10-25 | Micron Technology, Inc. | Oxidation enhancement in narrow masked field regions of a semiconductor wafer |
US5391511A (en) * | 1992-02-19 | 1995-02-21 | Micron Technology, Inc. | Semiconductor processing method of producing an isolated polysilicon lined cavity and a method of forming a capacitor |
US5217919A (en) * | 1992-03-19 | 1993-06-08 | Harris Corporation | Method of forming island with polysilicon-filled trench isolation |
US5292679A (en) * | 1992-04-23 | 1994-03-08 | Nippon Steel Corporation | Process for producing a semiconductor memory device having memory cells including transistors and capacitors |
US5240875A (en) * | 1992-08-12 | 1993-08-31 | North American Philips Corporation | Selective oxidation of silicon trench sidewall |
US5313419A (en) * | 1993-02-01 | 1994-05-17 | National Semiconductor Corporation | Self-aligned trench isolation scheme for select transistors in an alternate metal virtual ground (AMG) EPROM array |
JPH06252153A (ja) * | 1993-03-01 | 1994-09-09 | Toshiba Corp | 半導体装置の製造方法 |
US5422294A (en) * | 1993-05-03 | 1995-06-06 | Noble, Jr.; Wendell P. | Method of making a trench capacitor field shield with sidewall contact |
US5316965A (en) * | 1993-07-29 | 1994-05-31 | Digital Equipment Corporation | Method of decreasing the field oxide etch rate in isolation technology |
US5397725A (en) * | 1993-10-28 | 1995-03-14 | National Semiconductor Corporation | Method of controlling oxide thinning in an EPROM or flash memory array |
US5536675A (en) * | 1993-12-30 | 1996-07-16 | Intel Corporation | Isolation structure formation for semiconductor circuit fabrication |
US5448090A (en) * | 1994-08-03 | 1995-09-05 | International Business Machines Corporation | Structure for reducing parasitic leakage in a memory array with merged isolation and node trench construction |
US5426324A (en) * | 1994-08-11 | 1995-06-20 | International Business Machines Corporation | High capacitance multi-level storage node for high density TFT load SRAMs with low soft error rates |
-
1996
- 1996-07-30 US US08/688,346 patent/US5824580A/en not_active Expired - Lifetime
-
1997
- 1997-05-30 KR KR1019970022218A patent/KR100242409B1/ko not_active IP Right Cessation
- 1997-06-27 CN CN97113529A patent/CN1086513C/zh not_active Expired - Fee Related
- 1997-07-07 SG SG1997002379A patent/SG50863A1/en unknown
- 1997-07-15 EP EP97305279A patent/EP0822593B1/de not_active Expired - Lifetime
- 1997-07-15 DE DE69737172T patent/DE69737172T2/de not_active Expired - Lifetime
- 1997-07-28 JP JP21707797A patent/JP3422660B2/ja not_active Expired - Fee Related
- 1997-07-30 TW TW086110886A patent/TW353808B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5824580A (en) | 1998-10-20 |
EP0822593A2 (de) | 1998-02-04 |
EP0822593B1 (de) | 2007-01-03 |
JPH10107227A (ja) | 1998-04-24 |
CN1175087A (zh) | 1998-03-04 |
SG50863A1 (en) | 1998-07-20 |
TW353808B (en) | 1999-03-01 |
JP3422660B2 (ja) | 2003-06-30 |
EP0822593A3 (de) | 1998-04-15 |
KR980012136A (ko) | 1998-04-30 |
DE69737172T2 (de) | 2008-01-03 |
CN1086513C (zh) | 2002-06-19 |
KR100242409B1 (ko) | 2000-02-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |