DE69728948D1 - Projektionsbelichtungsapparat - Google Patents

Projektionsbelichtungsapparat

Info

Publication number
DE69728948D1
DE69728948D1 DE69728948T DE69728948T DE69728948D1 DE 69728948 D1 DE69728948 D1 DE 69728948D1 DE 69728948 T DE69728948 T DE 69728948T DE 69728948 T DE69728948 T DE 69728948T DE 69728948 D1 DE69728948 D1 DE 69728948D1
Authority
DE
Germany
Prior art keywords
exposure apparatus
projection exposure
projection
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69728948T
Other languages
English (en)
Other versions
DE69728948T2 (de
Inventor
Nobutaka Magome
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of DE69728948D1 publication Critical patent/DE69728948D1/de
Application granted granted Critical
Publication of DE69728948T2 publication Critical patent/DE69728948T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/02—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers of vinyl-aromatic monomers and conjugated dienes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Integrated Circuits (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE69728948T 1996-11-14 1997-11-14 Projektionsbelichtungsvorrichtung und Verfahren Expired - Lifetime DE69728948T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31865796 1996-11-14
JP31865796 1996-11-14

Publications (2)

Publication Number Publication Date
DE69728948D1 true DE69728948D1 (de) 2004-06-09
DE69728948T2 DE69728948T2 (de) 2005-09-15

Family

ID=18101587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69728948T Expired - Lifetime DE69728948T2 (de) 1996-11-14 1997-11-14 Projektionsbelichtungsvorrichtung und Verfahren

Country Status (4)

Country Link
US (1) US6160619A (de)
EP (1) EP0843221B1 (de)
KR (1) KR100517491B1 (de)
DE (1) DE69728948T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG102627A1 (en) * 1996-11-28 2004-03-26 Nikon Corp Lithographic device
JPH10209039A (ja) 1997-01-27 1998-08-07 Nikon Corp 投影露光方法及び投影露光装置
US20030145353A1 (en) * 1997-05-07 2003-07-31 Lightner Jonathan E. Starch biosynthetic enzymes
JP3441966B2 (ja) * 1998-06-02 2003-09-02 キヤノン株式会社 走査型露光装置および方法、デバイス製造方法
TW554257B (en) * 2000-07-10 2003-09-21 Asml Netherlands Bv Lithographic projection apparatus and device manufacturing method
JP2002231622A (ja) * 2000-11-29 2002-08-16 Nikon Corp ステージ装置及び露光装置
EP1390690A4 (de) * 2001-03-13 2009-07-08 Zygo Corp Zyklische fehlerverminderung in gemittelten interferometrischen positionsmessungen
WO2003019111A1 (en) * 2001-08-23 2003-03-06 Zygo Corporation Dynamic interferometric controlling direction of input beam
JP2003086492A (ja) * 2001-09-12 2003-03-20 Canon Inc 露光装置及びその制御方法並びにデバイスの製造方法
WO2003040648A1 (en) 2001-11-05 2003-05-15 Zygo Corporation Interferometric cyclic error compensation
AU2002360461A1 (en) * 2001-12-03 2003-06-17 Zygo Corporation Compensating for effects of non-isotropics gas mixtures in interferometers
WO2003069286A2 (en) * 2002-02-12 2003-08-21 Zygo Corporation Method and apparatus to measure fiber optic pickup errors in interferometry systems
US6906784B2 (en) * 2002-03-04 2005-06-14 Zygo Corporation Spatial filtering in interferometry
AU2003247779A1 (en) 2002-07-08 2004-01-23 Zygo Corporation Cyclic error compensation in interferometry systems
US7616322B2 (en) * 2002-07-08 2009-11-10 Zygo Corporation Cyclic error compensation in interferometry systems
US7428685B2 (en) * 2002-07-08 2008-09-23 Zygo Corporation Cyclic error compensation in interferometry systems
US7262860B2 (en) * 2002-07-29 2007-08-28 Zygo Corporation Compensation for errors in off-axis interferometric measurements
US7274462B2 (en) * 2002-09-09 2007-09-25 Zygo Corporation In SITU measurement and compensation of errors due to imperfections in interferometer optics in displacement measuring interferometry systems
WO2004042319A2 (en) * 2002-11-04 2004-05-21 Zygo Corporation Compensation of refractivity perturbations in an intererometer path
JP4546255B2 (ja) * 2002-12-12 2010-09-15 ザイゴ コーポレーション フォトリソグラフィック露光サイクルの間のステージ・ミラー歪の工程内補正
JP4311713B2 (ja) * 2003-03-10 2009-08-12 キヤノン株式会社 露光装置
US7327465B2 (en) * 2003-06-19 2008-02-05 Zygo Corporation Compensation for effects of beam misalignments in interferometer metrology systems
JP2007526450A (ja) 2003-06-19 2007-09-13 ザイゴ　コーポレーション 平面ミラー干渉計測定システムにおけるビーム・ミスアライメントの幾何学的な影響に対する補償
WO2005045529A2 (en) * 2003-11-04 2005-05-19 Zygo Corporation Characterization and compensation of errors in multi-axis interferometry system
WO2005067815A1 (en) * 2004-01-05 2005-07-28 Zygo Corporation Stage alignment in lithography tools
US7283248B2 (en) * 2004-01-06 2007-10-16 Zygo Corporation Multi-axis interferometers and methods and systems using multi-axis interferometers
US7375823B2 (en) * 2004-04-22 2008-05-20 Zygo Corporation Interferometry systems and methods of using interferometry systems
WO2005106383A2 (en) * 2004-04-22 2005-11-10 Zygo Corporation Interferometry systems and methods of using interferometry systems
US7489407B2 (en) * 2004-10-06 2009-02-10 Zygo Corporation Error correction in interferometry systems
WO2006102234A2 (en) * 2005-03-18 2006-09-28 Zygo Corporation Multi-axis interferometer with procedure and data processing for mirror mapping
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US7576868B2 (en) * 2007-06-08 2009-08-18 Zygo Corporation Cyclic error compensation in interferometry systems
JP6614880B2 (ja) * 2015-09-10 2019-12-04 キヤノン株式会社 リソグラフィ装置および物品の製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
CN112805623A (zh) * 2018-09-24 2021-05-14 Asml荷兰有限公司 工艺工具和检测方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61190546A (ja) * 1985-02-20 1986-08-25 Central Glass Co Ltd 光学用樹脂組成物
JPS63159459A (ja) * 1986-12-23 1988-07-02 Central Glass Co Ltd 樹脂組成物
JP2606285B2 (ja) * 1988-06-07 1997-04-30 株式会社ニコン 露光装置および位置合わせ方法
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JP3282233B2 (ja) * 1992-08-18 2002-05-13 株式会社ニコン 距離測定装置、及びそれを用いた投影露光装置
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH085848Y2 (ja) * 1993-04-06 1996-02-21 松本金属株式会社 キャスター
JPH07103713A (ja) * 1993-10-04 1995-04-18 Canon Inc 移動ステージ装置
JP3419960B2 (ja) * 1995-06-09 2003-06-23 康博 小池 屈折率分布型光学樹脂材料
JPH08334601A (ja) * 1995-06-09 1996-12-17 Yasuhiro Koike 屈折率分布型の光学樹脂材料
EP0841594A3 (de) * 1996-11-07 1999-08-25 Nikon Corporation Marke für Positionsdetektion, Verfahren und Vorrichtung zur Detektion einer Marke, und Belichtungssystem

Also Published As

Publication number Publication date
KR19980042558A (ko) 1998-08-17
EP0843221A3 (de) 1999-08-11
DE69728948T2 (de) 2005-09-15
EP0843221A2 (de) 1998-05-20
EP0843221B1 (de) 2004-05-06
KR100517491B1 (ko) 2006-03-09
US6160619A (en) 2000-12-12

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8328 Change in the person/name/address of the agent

Representative=s name: DERZEIT KEIN VERTRETER BESTELLT