DE69726718D1 - Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden - Google Patents

Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

Info

Publication number
DE69726718D1
DE69726718D1 DE69726718T DE69726718T DE69726718D1 DE 69726718 D1 DE69726718 D1 DE 69726718D1 DE 69726718 T DE69726718 T DE 69726718T DE 69726718 T DE69726718 T DE 69726718T DE 69726718 D1 DE69726718 D1 DE 69726718D1
Authority
DE
Germany
Prior art keywords
sensors
way
highly sensitive
integrated acceleration
manufacturing highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726718T
Other languages
English (en)
Other versions
DE69726718T2 (de
Inventor
Paolo Ferrari
Benedetto Vigna
Pietro Montanini
Marco Ferrera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69726718D1 publication Critical patent/DE69726718D1/de
Publication of DE69726718T2 publication Critical patent/DE69726718T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0109—Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0176—Chemical vapour Deposition
    • B81C2201/0177—Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0757—Topology for facilitating the monolithic integration
    • B81C2203/0778—Topology for facilitating the monolithic integration not provided for in B81C2203/0764 - B81C2203/0771
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
DE69726718T 1997-07-31 1997-07-31 Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden Expired - Lifetime DE69726718T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830407A EP0895090B1 (de) 1997-07-31 1997-07-31 Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

Publications (2)

Publication Number Publication Date
DE69726718D1 true DE69726718D1 (de) 2004-01-22
DE69726718T2 DE69726718T2 (de) 2004-10-07

Family

ID=8230747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726718T Expired - Lifetime DE69726718T2 (de) 1997-07-31 1997-07-31 Verfahren zum Herstellen hochempfindlicher integrierter Beschleunigungs- und Gyroskopsensoren und Sensoren, die derartig hergestellt werden

Country Status (4)

Country Link
US (4) US6109106A (de)
EP (1) EP0895090B1 (de)
JP (1) JPH11183518A (de)
DE (1) DE69726718T2 (de)

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TW308719B (de) * 1995-10-23 1997-06-21 Dow Corning
DE69831075D1 (de) * 1998-10-21 2005-09-08 St Microelectronics Srl Herstellungsverfahren von integrierten Vorrichtungen, die Mikrostrukturen mit elektrischen schwebenden Zwischenverbindungen enthalten
JP2000206142A (ja) * 1998-11-13 2000-07-28 Denso Corp 半導体力学量センサおよびその製造方法
WO2001063758A1 (en) * 2000-02-22 2001-08-30 Koninklijke Philips Electronics N.V. Method of manufacturing a hybrid integrated circuit comprising a semiconductor element and a piezoelectric filter
DE10017976A1 (de) * 2000-04-11 2001-10-18 Bosch Gmbh Robert Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
JP2001304903A (ja) 2000-04-27 2001-10-31 Denso Corp 分岐案内装置
US6792804B2 (en) * 2001-10-19 2004-09-21 Kionix, Inc. Sensor for measuring out-of-plane acceleration
JP2005227089A (ja) * 2004-02-12 2005-08-25 Denso Corp 力学量センサ装置
JP4367165B2 (ja) * 2004-02-13 2009-11-18 株式会社デンソー 半導体力学量センサの検査方法
US8357958B2 (en) * 2004-04-02 2013-01-22 Silicon Laboratories Inc. Integrated CMOS porous sensor
JP2007535662A (ja) * 2004-04-02 2007-12-06 カミンズ，チモシー 統合電子センサ
US8007167B2 (en) * 2005-09-30 2011-08-30 Silicon Laboratories Inc. Integrated electronic sensor
JP4774902B2 (ja) * 2005-10-17 2011-09-21 セイコーエプソン株式会社 Ｍｅｍｓ素子の製造方法
JP2009216658A (ja) * 2008-03-12 2009-09-24 Alps Electric Co Ltd ジャイロセンサの製造方法
US8513746B2 (en) 2010-10-15 2013-08-20 Rohm Co., Ltd. MEMS sensor and method for producing MEMS sensor, and MEMS package
DE102010062056B4 (de) * 2010-11-26 2018-09-27 Robert Bosch Gmbh Mikromechanisches Bauteil
US9164052B1 (en) 2011-09-30 2015-10-20 Silicon Laboratories Inc. Integrated gas sensor
US8669131B1 (en) 2011-09-30 2014-03-11 Silicon Laboratories Inc. Methods and materials for forming gas sensor structures
US8691609B1 (en) 2011-09-30 2014-04-08 Silicon Laboratories Inc. Gas sensor materials and methods for preparation thereof
US8852513B1 (en) 2011-09-30 2014-10-07 Silicon Laboratories Inc. Systems and methods for packaging integrated circuit gas sensor systems
CN108020687B (zh) * 2018-02-06 2024-03-19 深迪半导体(绍兴)有限公司 一种mems加速度计

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US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4699006A (en) * 1984-03-19 1987-10-13 The Charles Stark Draper Laboratory, Inc. Vibratory digital integrating accelerometer
US5016072A (en) * 1988-01-13 1991-05-14 The Charles Stark Draper Laboratory, Inc. Semiconductor chip gyroscopic transducer
US5417111A (en) * 1990-08-17 1995-05-23 Analog Devices, Inc. Monolithic chip containing integrated circuitry and suspended microstructure
JP2940293B2 (ja) * 1992-03-31 1999-08-25 日産自動車株式会社 半導体加速度センサの製造方法
US6199874B1 (en) * 1993-05-26 2001-03-13 Cornell Research Foundation Inc. Microelectromechanical accelerometer for automotive applications
US5610335A (en) * 1993-05-26 1997-03-11 Cornell Research Foundation Microelectromechanical lateral accelerometer
DE4318466B4 (de) * 1993-06-03 2004-12-09 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Sensors
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Also Published As

Publication number Publication date
EP0895090B1 (de) 2003-12-10
USRE41856E1 (en) 2010-10-26
DE69726718T2 (de) 2004-10-07
EP0895090A1 (de) 1999-02-03
JPH11183518A (ja) 1999-07-09
US6109106A (en) 2000-08-29
USRE41889E1 (en) 2010-10-26
US6184051B1 (en) 2001-02-06

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