DE69706503D1 - Steuerungsverfahren für eine optische Halbleitervorrichtung - Google Patents
Steuerungsverfahren für eine optische HalbleitervorrichtungInfo
- Publication number
- DE69706503D1 DE69706503D1 DE69706503T DE69706503T DE69706503D1 DE 69706503 D1 DE69706503 D1 DE 69706503D1 DE 69706503 T DE69706503 T DE 69706503T DE 69706503 T DE69706503 T DE 69706503T DE 69706503 D1 DE69706503 D1 DE 69706503D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- control method
- optical semiconductor
- optical
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
- H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
- H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1057—Comprising an active region having a varying composition or cross-section in a specific direction varying composition along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8293895A JP2937148B2 (ja) | 1996-11-06 | 1996-11-06 | 半導体集積型偏波モード変換器 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69706503D1 true DE69706503D1 (de) | 2001-10-11 |
DE69706503T2 DE69706503T2 (de) | 2002-04-25 |
Family
ID=17800550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69706503T Expired - Fee Related DE69706503T2 (de) | 1996-11-06 | 1997-11-06 | Steuerungsverfahren für eine optische Halbleitervorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6026107A (de) |
EP (3) | EP0997993A3 (de) |
JP (1) | JP2937148B2 (de) |
DE (1) | DE69706503T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19624514C1 (de) * | 1996-06-19 | 1997-07-17 | Siemens Ag | Laserdiode-Modulator-Kombination |
US6175446B1 (en) * | 1998-09-23 | 2001-01-16 | Sarnoff Corporation | Polarization-independent semiconductor optical amplifier |
KR100353419B1 (ko) * | 2000-03-10 | 2002-09-18 | 삼성전자 주식회사 | 편광 무의존 반도체 광증폭기 |
FR2813448A1 (fr) * | 2000-08-22 | 2002-03-01 | Cit Alcatel | Amplificateur optique a semi-conducteur |
WO2003032021A2 (en) * | 2001-10-09 | 2003-04-17 | Infinera Corporation | TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs |
US7751658B2 (en) * | 2001-10-09 | 2010-07-06 | Infinera Corporation | Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning |
US20080044128A1 (en) * | 2001-10-09 | 2008-02-21 | Infinera Corporation | TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs |
US7672546B2 (en) * | 2001-10-09 | 2010-03-02 | Infinera Corporation | Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips |
US6807214B2 (en) * | 2002-08-01 | 2004-10-19 | Agilent Technologies, Inc. | Integrated laser and electro-absorption modulator with improved extinction |
US7747114B2 (en) * | 2002-10-08 | 2010-06-29 | Infinera Corporation | Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same |
JP4359035B2 (ja) * | 2002-11-21 | 2009-11-04 | 富士通株式会社 | 光中継器 |
JP4632833B2 (ja) | 2005-03-25 | 2011-02-16 | 富士通株式会社 | 半導体装置 |
EP2146410A1 (de) * | 2008-07-18 | 2010-01-20 | Alcatel, Lucent | Verfahren und Photonenvorrichtung zur Eliminierung oder wesentlichen Reduzierung der Polarisationsempfindlichkeit eines injizierten optischen Signals und Herstellungsverfahren für solch eine Photonenvorrichtung |
GB2465754B (en) * | 2008-11-26 | 2011-02-09 | Univ Dublin City | A semiconductor optical amplifier with a reduced noise figure |
JP2013197200A (ja) * | 2012-03-16 | 2013-09-30 | Sumitomo Electric Device Innovations Inc | 受光装置の制御方法及び通信制御方法 |
CN107238992B (zh) * | 2016-03-28 | 2021-05-25 | 上海诺基亚贝尔股份有限公司 | 一种半导体光放大器装置和操作方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0732279B2 (ja) * | 1985-01-22 | 1995-04-10 | 日本電信電話株式会社 | 半導体発光素子 |
EP0469681B1 (de) * | 1990-08-03 | 1994-10-12 | Koninklijke Philips Electronics N.V. | Optischer Verstärker |
US5155737A (en) * | 1990-11-07 | 1992-10-13 | Nippon Telegraph & Telephone Corporation | Semiconductor wavelength conversion device |
US5117469A (en) * | 1991-02-01 | 1992-05-26 | Bell Communications Research, Inc. | Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well |
JP3306892B2 (ja) * | 1992-02-28 | 2002-07-24 | 株式会社日立製作所 | 半導体光集積素子およびその製造方法 |
JPH06180405A (ja) * | 1992-12-14 | 1994-06-28 | Canon Inc | 半導体光素子及び歪超格子を用いたte/tm位相整合光導波路素子 |
DE69521157T2 (de) * | 1994-02-18 | 2001-11-08 | Canon K.K., Tokio/Tokyo | Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers |
JPH07249832A (ja) * | 1994-03-10 | 1995-09-26 | Canon Inc | 光送受信器、及びその駆動方法、及びそれを用いた光通信システム |
JPH088491A (ja) * | 1994-06-22 | 1996-01-12 | Fujitsu Ltd | 光半導体装置及びそれを用いた光通信システム |
US5757832A (en) * | 1995-04-27 | 1998-05-26 | Canon Kabushiki Kaisha | Optical semiconductor device, driving method therefor and light source and opitcal communication system using the same |
JP3323725B2 (ja) * | 1995-12-08 | 2002-09-09 | キヤノン株式会社 | 偏波変調レーザ、その駆動方法及びそれを用いた光通信システム |
-
1996
- 1996-11-06 JP JP8293895A patent/JP2937148B2/ja not_active Expired - Lifetime
-
1997
- 1997-11-06 US US08/965,614 patent/US6026107A/en not_active Expired - Fee Related
- 1997-11-06 DE DE69706503T patent/DE69706503T2/de not_active Expired - Fee Related
- 1997-11-06 EP EP99123045A patent/EP0997993A3/de not_active Withdrawn
- 1997-11-06 EP EP99123044A patent/EP0997992A3/de not_active Withdrawn
- 1997-11-06 EP EP97119465A patent/EP0841733B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2937148B2 (ja) | 1999-08-23 |
EP0997993A2 (de) | 2000-05-03 |
EP0841733A1 (de) | 1998-05-13 |
EP0997992A3 (de) | 2001-12-12 |
DE69706503T2 (de) | 2002-04-25 |
EP0997993A3 (de) | 2001-12-12 |
EP0841733B1 (de) | 2001-09-05 |
EP0997992A2 (de) | 2000-05-03 |
JPH10144999A (ja) | 1998-05-29 |
US6026107A (en) | 2000-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |