DE69623518T2 - Flüssigkristall-Anzeigevorrichtung - Google Patents
Flüssigkristall-AnzeigevorrichtungInfo
- Publication number
- DE69623518T2 DE69623518T2 DE69623518T DE69623518T DE69623518T2 DE 69623518 T2 DE69623518 T2 DE 69623518T2 DE 69623518 T DE69623518 T DE 69623518T DE 69623518 T DE69623518 T DE 69623518T DE 69623518 T2 DE69623518 T2 DE 69623518T2
- Authority
- DE
- Germany
- Prior art keywords
- liquid crystal
- display device
- crystal display
- liquid
- display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004973 liquid crystal related substance Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
- G02F1/136281—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon having a transmissive semiconductor substrate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7044995 | 1995-03-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69623518D1 DE69623518D1 (de) | 2002-10-17 |
DE69623518T2 true DE69623518T2 (de) | 2003-05-22 |
Family
ID=13431834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69623518T Expired - Fee Related DE69623518T2 (de) | 1995-03-06 | 1996-03-05 | Flüssigkristall-Anzeigevorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5726720A (de) |
EP (1) | EP0731375B1 (de) |
KR (1) | KR100205207B1 (de) |
DE (1) | DE69623518T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100386203B1 (ko) * | 1996-02-29 | 2003-12-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전기광학장치및그제조방법 |
US6288764B1 (en) * | 1996-06-25 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device or electronic device having liquid crystal display panel |
JP3249077B2 (ja) * | 1996-10-18 | 2002-01-21 | キヤノン株式会社 | マトリクス基板と液晶装置 |
US6262438B1 (en) | 1996-11-04 | 2001-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type display circuit and method of manufacturing the same |
GB9827901D0 (en) * | 1998-12-19 | 1999-02-10 | Secr Defence | Active semiconductor |
US7821065B2 (en) | 1999-03-02 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same |
US6346730B1 (en) * | 1999-04-06 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate |
JP2001175198A (ja) * | 1999-12-14 | 2001-06-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US7525165B2 (en) | 2000-04-17 | 2009-04-28 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
KR100815900B1 (ko) * | 2001-12-20 | 2008-03-21 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
JP2003302649A (ja) * | 2002-04-12 | 2003-10-24 | Nec Lcd Technologies Ltd | 液晶表示装置 |
TWI244060B (en) * | 2003-06-12 | 2005-11-21 | Ind Tech Res Inst | A scan driving circuit with single-type transistors |
JP2006330130A (ja) * | 2005-05-24 | 2006-12-07 | Mitsubishi Electric Corp | 液晶表示装置およびその製造方法 |
TWI400785B (zh) * | 2007-07-12 | 2013-07-01 | Chunghwa Picture Tubes Ltd | 主動元件陣列基板 |
BRPI0922157A2 (pt) * | 2008-12-10 | 2015-12-29 | Sharp Kk | substrato de matriz ativa, método de fabricação de substrato de matriz ativa, painel de cristal líquido, método de fabricação de painel de cristal líquido, dispositivo de exibição de cristal líquido, unidade de exibição de cristal líquido, e receptor de televisão |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57132191A (en) * | 1981-02-10 | 1982-08-16 | Suwa Seikosha Kk | Active matrix substrate |
WO1989002095A1 (en) * | 1987-08-27 | 1989-03-09 | Hughes Aircraft Company | Lcmos displays fabricated with implant treated silicon wafers |
JPH01134426A (ja) * | 1987-11-20 | 1989-05-26 | Hitachi Ltd | 液晶デイスプレイ駆動用薄膜トランジスタ |
JPH02198428A (ja) * | 1989-01-27 | 1990-08-06 | Nec Corp | 液晶表示装置用アクティブマトリクス基板 |
JPH04226079A (ja) * | 1990-04-17 | 1992-08-14 | Canon Inc | 半導体装置及びその製造方法及びそれを有する電子回路装置 |
JP2895166B2 (ja) * | 1990-05-31 | 1999-05-24 | キヤノン株式会社 | 半導体装置の製造方法 |
DE69131570T2 (de) * | 1990-11-16 | 2000-02-17 | Seiko Epson Corp | Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung |
DE69332960T2 (de) * | 1992-01-28 | 2004-05-13 | Canon K.K. | Halbleiteranordnung |
US5434441A (en) * | 1992-01-31 | 1995-07-18 | Canon Kabushiki Kaisha | Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness |
JP3191061B2 (ja) * | 1992-01-31 | 2001-07-23 | キヤノン株式会社 | 半導体装置及び液晶表示装置 |
JP3526058B2 (ja) * | 1992-08-19 | 2004-05-10 | セイコーインスツルメンツ株式会社 | 光弁用半導体装置 |
-
1996
- 1996-03-04 US US08/610,355 patent/US5726720A/en not_active Expired - Fee Related
- 1996-03-05 EP EP96301495A patent/EP0731375B1/de not_active Expired - Lifetime
- 1996-03-05 DE DE69623518T patent/DE69623518T2/de not_active Expired - Fee Related
- 1996-03-06 KR KR1019960005774A patent/KR100205207B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0731375B1 (de) | 2002-09-11 |
EP0731375A3 (de) | 1997-07-23 |
KR960035118A (ko) | 1996-10-24 |
KR100205207B1 (ko) | 1999-07-01 |
EP0731375A2 (de) | 1996-09-11 |
DE69623518D1 (de) | 2002-10-17 |
US5726720A (en) | 1998-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |