DE69622943T2 - Optisches Dünnfilmmessverfahren, Filmformationsverfahren und Halbleiterlaserfabrikationsverfahren - Google Patents

Optisches Dünnfilmmessverfahren, Filmformationsverfahren und Halbleiterlaserfabrikationsverfahren

Info

Publication number
DE69622943T2
DE69622943T2 DE69622943T DE69622943T DE69622943T2 DE 69622943 T2 DE69622943 T2 DE 69622943T2 DE 69622943 T DE69622943 T DE 69622943T DE 69622943 T DE69622943 T DE 69622943T DE 69622943 T2 DE69622943 T2 DE 69622943T2
Authority
DE
Germany
Prior art keywords
semiconductor laser
optical thin
thin film
film formation
laser fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69622943T
Other languages
English (en)
Other versions
DE69622943D1 (de
Inventor
Takayuki Kondo
Katsumi Mori
Takeo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69622943D1 publication Critical patent/DE69622943D1/de
Application granted granted Critical
Publication of DE69622943T2 publication Critical patent/DE69622943T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
DE69622943T 1995-07-17 1996-07-16 Optisches Dünnfilmmessverfahren, Filmformationsverfahren und Halbleiterlaserfabrikationsverfahren Expired - Lifetime DE69622943T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20287295A JP3624476B2 (ja) 1995-07-17 1995-07-17 半導体レーザ装置の製造方法

Publications (2)

Publication Number Publication Date
DE69622943D1 DE69622943D1 (de) 2002-09-19
DE69622943T2 true DE69622943T2 (de) 2003-03-27

Family

ID=16464602

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69622943T Expired - Lifetime DE69622943T2 (de) 1995-07-17 1996-07-16 Optisches Dünnfilmmessverfahren, Filmformationsverfahren und Halbleiterlaserfabrikationsverfahren

Country Status (7)

Country Link
US (1) US5724145A (de)
EP (1) EP0754932B1 (de)
JP (1) JP3624476B2 (de)
KR (1) KR100203229B1 (de)
CN (1) CN1065046C (de)
DE (1) DE69622943T2 (de)
TW (1) TW368713B (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9297645B2 (en) 2011-04-06 2016-03-29 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9494409B2 (en) 2011-06-17 2016-11-15 Precitec Optronik Gmbh Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer
US9500471B2 (en) 2013-06-17 2016-11-22 Precitec Optronik Gmbh Optical measuring device and method for acquiring in situ a stage height between a support and an edge region of an object
US9677871B2 (en) 2012-11-15 2017-06-13 Precitec Optronik Gmbh Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
US10466357B1 (en) 2018-12-04 2019-11-05 Precitec Optronik Gmbh Optical measuring device
US11460577B2 (en) 2017-11-09 2022-10-04 Precitec Optronik Gmbh Distance measuring device

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JP3764794B2 (ja) * 1997-03-06 2006-04-12 松下電器産業株式会社 多層薄膜の膜厚測定方法と光学情報記録媒体の製造方法及び製造装置
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JP3357596B2 (ja) * 1998-03-05 2002-12-16 インターナショナル・ビジネス・マシーンズ・コーポレーション 成膜工程においてｉｎ−ｓｉｔｕに膜厚を測定する膜付着装置及びその方法
KR100315599B1 (ko) * 1998-11-19 2002-02-19 오길록 실시간레이저반사율측정장치를이용한표면방출형레이저용에피택시성장시스템및그를이용한표면방출형레이저제조방법
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6381021B1 (en) * 2000-06-22 2002-04-30 Applied Materials, Inc. Method and apparatus for measuring reflectivity of deposited films
WO2002006902A2 (en) * 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
WO2002017383A2 (en) * 2000-08-21 2002-02-28 Board Of Regents, The University Of Texas System Flexure based translation stage
US20060005657A1 (en) * 2004-06-01 2006-01-12 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
CN100365507C (zh) 2000-10-12 2008-01-30 德克萨斯州大学***董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
US20050274219A1 (en) * 2004-06-01 2005-12-15 Molecular Imprints, Inc. Method and system to control movement of a body for nano-scale manufacturing
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
DE10204943B4 (de) * 2002-02-07 2005-04-21 Leica Microsystems Jena Gmbh Verfahren zur Bestimmung von Schichtdicken
US6646752B2 (en) * 2002-02-22 2003-11-11 Taiwan Semiconductor Manufacturing Co. Ltd Method and apparatus for measuring thickness of a thin oxide layer
DE10227376B4 (de) * 2002-06-20 2005-03-31 Leica Microsystems Jena Gmbh Verfahren zur Bestimmung von Schichtdickenbereichen
US6932934B2 (en) * 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
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US7071088B2 (en) * 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US20040109188A1 (en) * 2002-09-13 2004-06-10 Kunihiro Akiyoshi Image forming apparatus and methods used in the image forming apparatus
US20040065252A1 (en) * 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US8349241B2 (en) * 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6929762B2 (en) * 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
JP3795007B2 (ja) 2002-11-27 2006-07-12 松下電器産業株式会社 半導体発光素子及びその製造方法
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US20040168613A1 (en) * 2003-02-27 2004-09-02 Molecular Imprints, Inc. Composition and method to form a release layer
US7452574B2 (en) * 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7815862B2 (en) * 2003-03-14 2010-10-19 Alliance For Sustainable Energy, Llc Wafer characteristics via reflectometry
US7122079B2 (en) * 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
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US7157036B2 (en) * 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
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JP5074800B2 (ja) * 2007-03-29 2012-11-14 古河電気工業株式会社 面発光レーザ素子および面発光レーザ素子の製造方法
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JP5660026B2 (ja) * 2011-12-28 2015-01-28 信越半導体株式会社 膜厚分布測定方法
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CN105067529A (zh) * 2015-08-24 2015-11-18 中国科学院国家空间科学中心 一种用于半导体器件材料吸收系数的光学测量方法
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JP6800800B2 (ja) 2017-04-06 2020-12-16 株式会社ニューフレアテクノロジー 成長速度測定装置および成長速度検出方法
CN107218896B (zh) * 2017-07-26 2019-06-25 大连理工大学 测量真空离子镀和等离子体喷涂镀膜膜厚与均匀性的方法
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9297645B2 (en) 2011-04-06 2016-03-29 Precitec Optronik Gmbh Apparatus and method for determining a depth of a region having a high aspect ratio that protrudes into a surface of a semiconductor wafer
US9494409B2 (en) 2011-06-17 2016-11-15 Precitec Optronik Gmbh Test device for testing a bonding layer between wafer-shaped samples and test process for testing the bonding layer
US9677871B2 (en) 2012-11-15 2017-06-13 Precitec Optronik Gmbh Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head
US9982994B2 (en) 2012-11-15 2018-05-29 Precitec Optronik Gmbh Optical measuring method and measuring device having a measuring head for capturing a surface topography by calibrating the orientation of the measuring head
US9500471B2 (en) 2013-06-17 2016-11-22 Precitec Optronik Gmbh Optical measuring device and method for acquiring in situ a stage height between a support and an edge region of an object
US10234265B2 (en) 2016-12-12 2019-03-19 Precitec Optronik Gmbh Distance measuring device and method for measuring distances
US11460577B2 (en) 2017-11-09 2022-10-04 Precitec Optronik Gmbh Distance measuring device
US10466357B1 (en) 2018-12-04 2019-11-05 Precitec Optronik Gmbh Optical measuring device

Also Published As

Publication number Publication date
US5724145A (en) 1998-03-03
DE69622943D1 (de) 2002-09-19
CN1140832A (zh) 1997-01-22
JP3624476B2 (ja) 2005-03-02
KR100203229B1 (ko) 1999-06-15
EP0754932B1 (de) 2002-08-14
EP0754932A3 (de) 1998-01-28
TW368713B (en) 1999-09-01
CN1065046C (zh) 2001-04-25
EP0754932A2 (de) 1997-01-22
JPH0933223A (ja) 1997-02-07
KR970007298A (ko) 1997-02-21

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