DE69600713D1 - Oberflächenemittierender Halbleiterlaser mit Lichtempfänger, Herstellungsverfahren, und Sensor unter Verwendung desselben - Google Patents
Oberflächenemittierender Halbleiterlaser mit Lichtempfänger, Herstellungsverfahren, und Sensor unter Verwendung desselbenInfo
- Publication number
- DE69600713D1 DE69600713D1 DE69600713T DE69600713T DE69600713D1 DE 69600713 D1 DE69600713 D1 DE 69600713D1 DE 69600713 T DE69600713 T DE 69600713T DE 69600713 T DE69600713 T DE 69600713T DE 69600713 D1 DE69600713 D1 DE 69600713D1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- manufacturing
- same
- semiconductor laser
- light receiver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0076—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means
- G01L9/0077—Transmitting or indicating the displacement of flexible diaphragms using photoelectric means for measuring reflected light
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/126—Circuits, methods or arrangements for laser control or stabilisation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/08—Disposition or mounting of heads or light sources relatively to record carriers
- G11B7/09—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
- G11B7/095—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following specially adapted for discs, e.g. for compensation of eccentricity or wobble
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0042—On wafer testing, e.g. lasers are tested before separating wafer into chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0208—Semi-insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7198203A JPH0927611A (ja) | 1995-07-11 | 1995-07-11 | 光検出部を備えた面発光型半導体レーザ及びその製造方法並びにそれを用いたセンサ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69600713D1 true DE69600713D1 (de) | 1998-11-05 |
DE69600713T2 DE69600713T2 (de) | 1999-04-15 |
Family
ID=16387203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69600713T Expired - Lifetime DE69600713T2 (de) | 1995-07-11 | 1996-07-10 | Oberflächenemittierender Halbleiterlaser mit Lichtempfänger, Herstellungsverfahren, und Sensor unter Verwendung desselben |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0753912B1 (de) |
JP (1) | JPH0927611A (de) |
KR (1) | KR100205731B1 (de) |
CN (2) | CN1089958C (de) |
DE (1) | DE69600713T2 (de) |
HK (1) | HK1004502A1 (de) |
TW (2) | TW399341B (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6535779B1 (en) | 1998-03-06 | 2003-03-18 | Applied Materials, Inc. | Apparatus and method for endpoint control and plasma monitoring |
US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
EP1125314A1 (de) | 1998-07-10 | 2001-08-22 | Applied Materials, Inc. | Verbesserte endpunktbestimmung für einen substratfabrikationsprozess |
GB2344455A (en) * | 1998-12-01 | 2000-06-07 | Mitel Semiconductor Ab | Semiconductor device with low parasitic capacitance |
US6449038B1 (en) | 1999-12-13 | 2002-09-10 | Applied Materials, Inc. | Detecting a process endpoint from a change in reflectivity |
US6274402B1 (en) * | 1999-12-30 | 2001-08-14 | Sunpower Corporation | Method of fabricating a silicon solar cell |
US6717974B2 (en) * | 2002-04-01 | 2004-04-06 | Lumei Optoelectronics Corporation | Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser |
JP4366921B2 (ja) | 2002-07-12 | 2009-11-18 | セイコーエプソン株式会社 | 本人照合装置、カード型情報記録媒体及びそれを用いた情報処理システム |
JP2004235190A (ja) | 2003-01-28 | 2004-08-19 | Sony Corp | 光半導体装置 |
US6905624B2 (en) | 2003-07-07 | 2005-06-14 | Applied Materials, Inc. | Interferometric endpoint detection in a substrate etching process |
KR100617693B1 (ko) * | 2003-08-20 | 2006-08-28 | 삼성전자주식회사 | 광검출기를 구비하는 반도체 광증폭 장치 및 그 제조방법 |
JP4091529B2 (ja) * | 2003-11-20 | 2008-05-28 | ローム株式会社 | 半導体レーザ |
JP4584066B2 (ja) | 2004-12-10 | 2010-11-17 | 韓國電子通信研究院 | 光感知器を備えた面発光レーザ素子及びこれを用いた光導波路素子 |
JP2007129010A (ja) * | 2005-11-02 | 2007-05-24 | Seiko Epson Corp | 面発光型半導体レーザ及びその製造方法 |
JP2008235477A (ja) * | 2007-03-19 | 2008-10-02 | Oki Electric Ind Co Ltd | フォトダイオードおよびそれを用いたフォトic |
JP6294150B2 (ja) * | 2014-05-09 | 2018-03-14 | 旭化成エレクトロニクス株式会社 | 受発光装置 |
CN108718032A (zh) * | 2018-05-18 | 2018-10-30 | 河南仕佳光子科技股份有限公司 | 一种整片制作和测试边发射光器件的方法 |
CN114593756B (zh) * | 2022-03-04 | 2023-09-29 | 武汉东湖学院 | 电子通讯用防水光电传感接头及其使用方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5132982A (en) * | 1991-05-09 | 1992-07-21 | Bell Communications Research, Inc. | Optically controlled surface-emitting lasers |
JPH0555703A (ja) * | 1991-05-15 | 1993-03-05 | Fujitsu Ltd | 面発光レーザ装置 |
US5331658A (en) * | 1992-08-26 | 1994-07-19 | Motorola, Inc. | Vertical cavity surface emitting laser and sensor |
DE4404635C2 (de) * | 1993-02-17 | 1998-06-18 | Hitachi Ltd | Schwimmender optischer Abtastkopf, der integral mit einer Lichtquelle und einem Photodetektor ausgebildet ist, und optisches Plattengerät mit einem solchen |
-
1995
- 1995-07-11 JP JP7198203A patent/JPH0927611A/ja active Pending
-
1996
- 1996-06-28 TW TW085107855A patent/TW399341B/zh active
- 1996-06-28 TW TW088200682U patent/TW416576U/zh not_active IP Right Cessation
- 1996-07-09 KR KR1019960027549A patent/KR100205731B1/ko not_active IP Right Cessation
- 1996-07-10 CN CN96110615A patent/CN1089958C/zh not_active Expired - Lifetime
- 1996-07-10 DE DE69600713T patent/DE69600713T2/de not_active Expired - Lifetime
- 1996-07-10 EP EP96111116A patent/EP0753912B1/de not_active Expired - Lifetime
-
1998
- 1998-04-30 HK HK98103702A patent/HK1004502A1/xx not_active IP Right Cessation
-
2002
- 2002-01-18 CN CNB021017921A patent/CN1197213C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0753912B1 (de) | 1998-09-30 |
KR100205731B1 (ko) | 1999-07-01 |
HK1004502A1 (en) | 1998-11-27 |
TW399341B (en) | 2000-07-21 |
KR970008752A (ko) | 1997-02-24 |
JPH0927611A (ja) | 1997-01-28 |
CN1089958C (zh) | 2002-08-28 |
CN1396686A (zh) | 2003-02-12 |
DE69600713T2 (de) | 1999-04-15 |
EP0753912A1 (de) | 1997-01-15 |
TW416576U (en) | 2000-12-21 |
CN1152801A (zh) | 1997-06-25 |
CN1197213C (zh) | 2005-04-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |