DE69528217D1 - Vorrichtung und Verfahren zur Bearbeitung von Substraten - Google Patents
Vorrichtung und Verfahren zur Bearbeitung von SubstratenInfo
- Publication number
- DE69528217D1 DE69528217D1 DE69528217T DE69528217T DE69528217D1 DE 69528217 D1 DE69528217 D1 DE 69528217D1 DE 69528217 T DE69528217 T DE 69528217T DE 69528217 T DE69528217 T DE 69528217T DE 69528217 D1 DE69528217 D1 DE 69528217D1
- Authority
- DE
- Germany
- Prior art keywords
- processing substrates
- substrates
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/263,617 US5476548A (en) | 1994-06-20 | 1994-06-20 | Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69528217D1 true DE69528217D1 (de) | 2002-10-24 |
DE69528217T2 DE69528217T2 (de) | 2003-04-30 |
Family
ID=23002524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69528217T Expired - Fee Related DE69528217T2 (de) | 1994-06-20 | 1995-06-15 | Vorrichtung und Verfahren zur Bearbeitung von Substraten |
Country Status (5)
Country | Link |
---|---|
US (1) | US5476548A (de) |
EP (1) | EP0688888B1 (de) |
JP (2) | JP3963966B2 (de) |
KR (1) | KR960002527A (de) |
DE (1) | DE69528217T2 (de) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5855687A (en) * | 1990-12-05 | 1999-01-05 | Applied Materials, Inc. | Substrate support shield in wafer processing reactors |
US5695568A (en) * | 1993-04-05 | 1997-12-09 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US5766365A (en) * | 1994-02-23 | 1998-06-16 | Applied Materials, Inc. | Removable ring for controlling edge deposition in substrate processing apparatus |
US6033480A (en) * | 1994-02-23 | 2000-03-07 | Applied Materials, Inc. | Wafer edge deposition elimination |
US5888304A (en) * | 1996-04-02 | 1999-03-30 | Applied Materials, Inc. | Heater with shadow ring and purge above wafer surface |
US5590239A (en) * | 1994-06-06 | 1996-12-31 | Motorola | Planar uniform heating surface with additional circumscribing ring |
US5705080A (en) * | 1994-07-06 | 1998-01-06 | Applied Materials, Inc. | Plasma-inert cover and plasma cleaning process |
JP3257328B2 (ja) * | 1995-03-16 | 2002-02-18 | 株式会社日立製作所 | プラズマ処理装置及びプラズマ処理方法 |
JPH08302474A (ja) * | 1995-04-28 | 1996-11-19 | Anelva Corp | Cvd装置の加熱装置 |
US5908530A (en) * | 1995-05-18 | 1999-06-01 | Obsidian, Inc. | Apparatus for chemical mechanical polishing |
US5772773A (en) * | 1996-05-20 | 1998-06-30 | Applied Materials, Inc. | Co-axial motorized wafer lift |
US5866067A (en) * | 1997-03-24 | 1999-02-02 | Sony Corporation And Materials Research Corporation | High purity chromium metal by casting with controlled oxygen content |
US6110025A (en) * | 1997-05-07 | 2000-08-29 | Obsidian, Inc. | Containment ring for substrate carrier apparatus |
FR2763964B1 (fr) * | 1997-05-28 | 1999-08-13 | Sgs Thomson Microelectronics | Amelioration du flux gazeux dans un reacteur d'epitaxie |
US5985033A (en) * | 1997-07-11 | 1999-11-16 | Applied Materials, Inc. | Apparatus and method for delivering a gas |
US6063440A (en) * | 1997-07-11 | 2000-05-16 | Applied Materials, Inc. | Method for aligning a wafer |
US6296712B1 (en) | 1997-12-02 | 2001-10-02 | Applied Materials, Inc. | Chemical vapor deposition hardware and process |
US6210483B1 (en) | 1997-12-02 | 2001-04-03 | Applied Materials, Inc. | Anti-notch thinning heater |
US5955381A (en) * | 1998-03-03 | 1999-09-21 | Lucent Technologies Inc. | Integrated circuit fabrication |
US6159299A (en) * | 1999-02-09 | 2000-12-12 | Applied Materials, Inc. | Wafer pedestal with a purge ring |
US6323129B1 (en) * | 1999-04-02 | 2001-11-27 | National Semiconductor Corporation | Process for maintaining a semiconductor substrate layer deposition equipment chamber in a preconditioned and low particulate state |
US6423949B1 (en) * | 1999-05-19 | 2002-07-23 | Applied Materials, Inc. | Multi-zone resistive heater |
US6464795B1 (en) | 1999-05-21 | 2002-10-15 | Applied Materials, Inc. | Substrate support member for a processing chamber |
US6176931B1 (en) | 1999-10-29 | 2001-01-23 | International Business Machines Corporation | Wafer clamp ring for use in an ionized physical vapor deposition apparatus |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6494955B1 (en) | 2000-02-15 | 2002-12-17 | Applied Materials, Inc. | Ceramic substrate support |
US6350320B1 (en) * | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
US6488565B1 (en) | 2000-08-29 | 2002-12-03 | Applied Materials, Inc. | Apparatus for chemical mechanical planarization having nested load cups |
JP4583591B2 (ja) * | 2000-12-15 | 2010-11-17 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
US6709721B2 (en) | 2001-03-28 | 2004-03-23 | Applied Materials Inc. | Purge heater design and process development for the improvement of low k film properties |
US6795292B2 (en) | 2001-05-15 | 2004-09-21 | Dennis Grimard | Apparatus for regulating temperature of a process kit in a semiconductor wafer-processing chamber |
US6730175B2 (en) | 2002-01-22 | 2004-05-04 | Applied Materials, Inc. | Ceramic substrate support |
US7582186B2 (en) * | 2002-12-20 | 2009-09-01 | Tokyo Electron Limited | Method and apparatus for an improved focus ring in a plasma processing system |
US20040244949A1 (en) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Temperature controlled shield ring |
US7648579B2 (en) * | 2004-02-13 | 2010-01-19 | Asm America, Inc. | Substrate support system for reduced autodoping and backside deposition |
US7691204B2 (en) * | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
US8372203B2 (en) * | 2005-09-30 | 2013-02-12 | Applied Materials, Inc. | Apparatus temperature control and pattern compensation |
US9917001B2 (en) * | 2008-01-21 | 2018-03-13 | Applied Materials, Inc. | High temperature fine grain aluminum heater |
JP2009277720A (ja) * | 2008-05-12 | 2009-11-26 | Nec Electronics Corp | 半導体装置の製造方法及びエッチング装置 |
US8449679B2 (en) | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8753447B2 (en) * | 2009-06-10 | 2014-06-17 | Novellus Systems, Inc. | Heat shield for heater in semiconductor processing apparatus |
WO2011082020A2 (en) * | 2009-12-31 | 2011-07-07 | Applied Materials, Inc. | Shadow ring for modifying wafer edge and bevel deposition |
US8740206B2 (en) * | 2010-01-27 | 2014-06-03 | Applied Materials, Inc. | Life enhancement of ring assembly in semiconductor manufacturing chambers |
JP6056403B2 (ja) * | 2012-11-15 | 2017-01-11 | 東京エレクトロン株式会社 | 成膜装置 |
US9997381B2 (en) * | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
JP6024921B2 (ja) * | 2013-11-01 | 2016-11-16 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
ITCO20130058A1 (it) * | 2013-11-11 | 2015-05-12 | Lpe Spa | Suscettore con lavorazioni di forma arcuata nella superficie d'appoggio dei substrati |
ITCO20130072A1 (it) * | 2013-12-19 | 2015-06-20 | Lpe Spa | Suscettore con lavorazioni curve e concentriche nella superficie d'appoggio dei substrati |
US10903055B2 (en) | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
TWI734770B (zh) | 2016-04-24 | 2021-08-01 | 美商應用材料股份有限公司 | 用於防止空間ald處理腔室中之背側沉積的設備 |
US10147610B1 (en) | 2017-05-30 | 2018-12-04 | Lam Research Corporation | Substrate pedestal module including metallized ceramic tubes for RF and gas delivery |
US11330673B2 (en) | 2017-11-20 | 2022-05-10 | Applied Materials, Inc. | Heated substrate support |
US20210375591A1 (en) * | 2018-04-20 | 2021-12-02 | Lam Research Corporation | Edge exclusion control |
KR20210030074A (ko) * | 2019-09-09 | 2021-03-17 | 삼성전자주식회사 | 진공 척 및 상기 진공 척을 포함하는 기판 처리 장치 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262029A (en) * | 1988-05-23 | 1993-11-16 | Lam Research | Method and system for clamping semiconductor wafers |
EP0456372B1 (de) * | 1990-04-23 | 1995-03-22 | Genus, Inc. | Peripherieabdichtung für Halbleiterplättchen durch Gasinjektion |
US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
US5238499A (en) * | 1990-07-16 | 1993-08-24 | Novellus Systems, Inc. | Gas-based substrate protection during processing |
US5304248A (en) * | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
WO1993013241A1 (en) * | 1991-12-23 | 1993-07-08 | Genus, Inc. | Purge gas in wafer coating area selection |
US5328722A (en) * | 1992-11-06 | 1994-07-12 | Applied Materials, Inc. | Metal chemical vapor deposition process using a shadow ring |
US5292554A (en) * | 1992-11-12 | 1994-03-08 | Applied Materials, Inc. | Deposition apparatus using a perforated pumping plate |
US5326725A (en) * | 1993-03-11 | 1994-07-05 | Applied Materials, Inc. | Clamping ring and susceptor therefor |
US5695568A (en) * | 1993-04-05 | 1997-12-09 | Applied Materials, Inc. | Chemical vapor deposition chamber |
DE69432383D1 (de) * | 1993-05-27 | 2003-05-08 | Applied Materials Inc | Verbesserungen betreffend Substrathalter geeignet für den Gebrauch in Vorrichtungen für die chemische Abscheidung aus der Dampfphase |
US5511799A (en) * | 1993-06-07 | 1996-04-30 | Applied Materials, Inc. | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
DE69401863T2 (de) * | 1993-07-15 | 1997-07-03 | Applied Materials Inc | Verbesserte Suszeptor Ausführung |
JP4108119B2 (ja) * | 1994-02-23 | 2008-06-25 | アプライド マテリアルズ, インコーポレイテッド | 改良型化学気相堆積チャンバ |
-
1994
- 1994-06-20 US US08/263,617 patent/US5476548A/en not_active Expired - Lifetime
-
1995
- 1995-06-15 DE DE69528217T patent/DE69528217T2/de not_active Expired - Fee Related
- 1995-06-15 EP EP95304139A patent/EP0688888B1/de not_active Expired - Lifetime
- 1995-06-20 KR KR1019950016322A patent/KR960002527A/ko not_active Application Discontinuation
- 1995-06-20 JP JP15329395A patent/JP3963966B2/ja not_active Expired - Lifetime
-
2006
- 2006-11-15 JP JP2006309527A patent/JP4563984B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5476548A (en) | 1995-12-19 |
EP0688888A2 (de) | 1995-12-27 |
JP2007113119A (ja) | 2007-05-10 |
JP4563984B2 (ja) | 2010-10-20 |
KR960002527A (ko) | 1996-01-26 |
JP3963966B2 (ja) | 2007-08-22 |
EP0688888B1 (de) | 2002-09-18 |
DE69528217T2 (de) | 2003-04-30 |
JPH0881775A (ja) | 1996-03-26 |
EP0688888A3 (de) | 1998-02-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |