DE69522738D1 - Verfahren und Schaltkreis zum Programmieren einer Schwebegatterspeicherzelle - Google Patents
Verfahren und Schaltkreis zum Programmieren einer SchwebegatterspeicherzelleInfo
- Publication number
- DE69522738D1 DE69522738D1 DE69522738T DE69522738T DE69522738D1 DE 69522738 D1 DE69522738 D1 DE 69522738D1 DE 69522738 T DE69522738 T DE 69522738T DE 69522738 T DE69522738 T DE 69522738T DE 69522738 D1 DE69522738 D1 DE 69522738D1
- Authority
- DE
- Germany
- Prior art keywords
- programming
- circuit
- memory cell
- floating gate
- gate memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/239,008 US5412603A (en) | 1994-05-06 | 1994-05-06 | Method and circuitry for programming floating-gate memory cell using a single low-voltage supply |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69522738D1 true DE69522738D1 (de) | 2001-10-25 |
DE69522738T2 DE69522738T2 (de) | 2002-07-04 |
Family
ID=22900226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69522738T Expired - Lifetime DE69522738T2 (de) | 1994-05-06 | 1995-05-05 | Verfahren und Schaltkreis zum Programmieren einer Schwebegatterspeicherzelle |
Country Status (4)
Country | Link |
---|---|
US (1) | US5412603A (de) |
EP (1) | EP0681296B1 (de) |
JP (1) | JPH0845291A (de) |
DE (1) | DE69522738T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2731701B2 (ja) * | 1993-06-30 | 1998-03-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Dramセル |
US5659504A (en) * | 1995-05-25 | 1997-08-19 | Lucent Technologies Inc. | Method and apparatus for hot carrier injection |
DE69514791T2 (de) * | 1995-07-24 | 2000-07-20 | Stmicroelectronics S.R.L., Agrate Brianza | Flash-EEPROM mit onchip-Löschung-Source-Spannungsgenerator |
US5753952A (en) * | 1995-09-22 | 1998-05-19 | Texas Instruments Incorporated | Nonvolatile memory cell with P-N junction formed in polysilicon floating gate |
US6330190B1 (en) | 1996-05-30 | 2001-12-11 | Hyundai Electronics America | Semiconductor structure for flash memory enabling low operating potentials |
US5909397A (en) * | 1996-10-08 | 1999-06-01 | Texas Instruments Incorporated | Method and system for testing and adjusting threshold voltages in flash eeproms |
US5912837A (en) * | 1996-10-28 | 1999-06-15 | Micron Technology, Inc. | Bitline disturb reduction |
GB2325546B (en) * | 1997-05-21 | 2001-10-17 | Motorola Inc | Electrically programmable memory and method of programming |
US6240023B1 (en) | 1998-02-27 | 2001-05-29 | Micron Technology, Inc. | Method for efficiently executing soft programming of a memory block |
US6587903B2 (en) | 1998-02-27 | 2003-07-01 | Micron Technology, Inc. | Soft programming for recovery of overerasure |
JP3999900B2 (ja) * | 1998-09-10 | 2007-10-31 | 株式会社東芝 | 不揮発性半導体メモリ |
US6373094B2 (en) * | 1998-09-11 | 2002-04-16 | Texas Instruments Incorporated | EEPROM cell using conventional process steps |
US6011722A (en) * | 1998-10-13 | 2000-01-04 | Lucent Technologies Inc. | Method for erasing and programming memory devices |
US6141255A (en) * | 1999-09-02 | 2000-10-31 | Advanced Micro Devices, Inc. | 1 transistor cell for EEPROM application |
US6137727A (en) * | 2000-01-24 | 2000-10-24 | Advanced Micro Devices, Inc. | Reduction of oxide stress through the use of forward biased body voltage |
US6747899B2 (en) * | 2001-05-14 | 2004-06-08 | Nexflash Technologies, Inc. | Method and apparatus for multiple byte or page mode programming of a flash memory array |
US6449187B1 (en) | 2001-07-17 | 2002-09-10 | Texas Instruments Incorporated | Method and apparatus for programming flash memory device |
US20060007732A1 (en) * | 2004-07-06 | 2006-01-12 | Macronix International Co., Ltd. | Charge trapping non-volatile memory and method for operating same |
US7387932B2 (en) * | 2004-07-06 | 2008-06-17 | Macronix International Co., Ltd. | Method for manufacturing a multiple-gate charge trapping non-volatile memory |
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7473589B2 (en) * | 2005-12-09 | 2009-01-06 | Macronix International Co., Ltd. | Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
US7315474B2 (en) * | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
US7763927B2 (en) * | 2005-12-15 | 2010-07-27 | Macronix International Co., Ltd. | Non-volatile memory device having a nitride-oxide dielectric layer |
US7907450B2 (en) * | 2006-05-08 | 2011-03-15 | Macronix International Co., Ltd. | Methods and apparatus for implementing bit-by-bit erase of a flash memory device |
DE102006023934B3 (de) * | 2006-05-19 | 2007-11-15 | Atmel Germany Gmbh | Speichervorrichtung mit einer nicht-flüchtigen Speichermatrix |
DE102006023933A1 (de) * | 2006-05-19 | 2007-11-29 | Atmel Germany Gmbh | Speichervorrichtung und Verfahren zur Programmierung einer nicht-flüchtigen Speichermatrix |
US8772858B2 (en) * | 2006-10-11 | 2014-07-08 | Macronix International Co., Ltd. | Vertical channel memory and manufacturing method thereof and operating method using the same |
US7811890B2 (en) * | 2006-10-11 | 2010-10-12 | Macronix International Co., Ltd. | Vertical channel transistor structure and manufacturing method thereof |
US7737488B2 (en) * | 2007-08-09 | 2010-06-15 | Macronix International Co., Ltd. | Blocking dielectric engineered charge trapping memory cell with high speed erase |
US9240405B2 (en) | 2011-04-19 | 2016-01-19 | Macronix International Co., Ltd. | Memory with off-chip controller |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016588A (en) * | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
JPS59124095A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 半導体記憶装置 |
US4687312A (en) * | 1984-06-27 | 1987-08-18 | Panavision, Inc. | Matte box assembly |
JPH04123471A (ja) * | 1990-09-14 | 1992-04-23 | Oki Electric Ind Co Ltd | 半導体記憶装置のデータ書込みおよび消去方法 |
US5313429A (en) * | 1992-02-14 | 1994-05-17 | Catalyst Semiconductor, Inc. | Memory circuit with pumped voltage for erase and program operations |
US5306954A (en) * | 1992-06-04 | 1994-04-26 | Sipex Corporation | Charge pump with symmetrical +V and -V outputs |
US5341342A (en) * | 1992-12-18 | 1994-08-23 | National Semiconductor Corporation | Flash memory cell structure |
-
1994
- 1994-05-06 US US08/239,008 patent/US5412603A/en not_active Expired - Lifetime
-
1995
- 1995-05-02 JP JP10879295A patent/JPH0845291A/ja active Pending
- 1995-05-05 DE DE69522738T patent/DE69522738T2/de not_active Expired - Lifetime
- 1995-05-05 EP EP95106827A patent/EP0681296B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69522738T2 (de) | 2002-07-04 |
JPH0845291A (ja) | 1996-02-16 |
US5412603A (en) | 1995-05-02 |
EP0681296A2 (de) | 1995-11-08 |
EP0681296A3 (de) | 1998-10-14 |
EP0681296B1 (de) | 2001-09-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |