DE69515407T2 - Ausgangspufferschaltung - Google Patents

Ausgangspufferschaltung

Info

Publication number
DE69515407T2
DE69515407T2 DE69515407T DE69515407T DE69515407T2 DE 69515407 T2 DE69515407 T2 DE 69515407T2 DE 69515407 T DE69515407 T DE 69515407T DE 69515407 T DE69515407 T DE 69515407T DE 69515407 T2 DE69515407 T2 DE 69515407T2
Authority
DE
Germany
Prior art keywords
output buffer
buffer circuit
circuit
output
buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515407T
Other languages
English (en)
Other versions
DE69515407D1 (de
Inventor
Masayuki Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69515407D1 publication Critical patent/DE69515407D1/de
Publication of DE69515407T2 publication Critical patent/DE69515407T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)
DE69515407T 1994-09-26 1995-09-26 Ausgangspufferschaltung Expired - Fee Related DE69515407T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6229308A JPH0897706A (ja) 1994-09-26 1994-09-26 出力バッファ回路

Publications (2)

Publication Number Publication Date
DE69515407D1 DE69515407D1 (de) 2000-04-13
DE69515407T2 true DE69515407T2 (de) 2000-07-27

Family

ID=16890111

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515407T Expired - Fee Related DE69515407T2 (de) 1994-09-26 1995-09-26 Ausgangspufferschaltung

Country Status (5)

Country Link
US (1) US5646571A (de)
EP (1) EP0703670B1 (de)
JP (1) JPH0897706A (de)
KR (1) KR100262233B1 (de)
DE (1) DE69515407T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723994A (en) * 1996-06-10 1998-03-03 Etron Technology, Inc. Level boost restoration circuit
US6188265B1 (en) * 1997-12-12 2001-02-13 Scenix Semiconduction, Inc. High-voltage NMOS switch
GB2332793A (en) * 1997-12-24 1999-06-30 Ericsson Telefon Ab L M Voltage doubling circuit for MOS transistor gate drive
JP4354056B2 (ja) * 1999-10-12 2009-10-28 株式会社 沖マイクロデザイン 半導体集積回路
KR100343466B1 (ko) * 1999-12-27 2002-07-11 박종섭 고전압 구동회로
KR100372246B1 (ko) * 2000-05-03 2003-02-17 삼성전자주식회사 반도체 메모리 장치의 에코클럭 생성회로 및 방법
US6512400B1 (en) * 2000-08-30 2003-01-28 Micron Technology, Inc. Integrated circuit comparator or amplifier
KR100833400B1 (ko) * 2001-12-15 2008-05-28 주식회사 하이닉스반도체 출력 버퍼
KR100481057B1 (ko) * 2002-06-11 2005-04-07 경상대학교산학협력단 알루미나-지르코니아 복합체의 제조방법
US20040130387A1 (en) * 2003-01-06 2004-07-08 Andrew Marshall Logic circuitry with reduced standby leakage using charge pumped switches
JP4300058B2 (ja) * 2003-05-15 2009-07-22 パナソニック株式会社 電圧発生装置、電荷転送装置、固体撮像素子、固体撮像システムおよび電圧発生方法
JP4400336B2 (ja) * 2003-08-27 2010-01-20 株式会社デンソー 電子制御装置
TW200525869A (en) * 2004-01-28 2005-08-01 Renesas Tech Corp Switching power supply and semiconductor IC
JP4631524B2 (ja) * 2005-04-26 2011-02-16 富士電機システムズ株式会社 ドライブ回路
TWI353575B (en) * 2006-12-29 2011-12-01 Novatek Microelectronics Corp Gate driver structure of tft-lcd display
JP2010279138A (ja) * 2009-05-28 2010-12-09 Hitachi Ltd スイッチング昇圧型ｄｃ−ｄｃコンバータおよび半導体集積回路装置
JP2017216611A (ja) * 2016-06-01 2017-12-07 マイクロン テクノロジー， インク． 半導体装置
CN108206689B (zh) * 2016-12-19 2024-02-23 上海安其威微电子科技有限公司 电平转换驱动电路

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265635A (en) * 1975-11-28 1977-05-31 Toshiba Corp Level shift circuit
SU636805A1 (ru) * 1976-07-07 1978-12-05 Организация П/Я Х-5263 Формирователь импульсов на мдптранзисторах
JPS57192119A (en) * 1981-05-21 1982-11-26 Toshiba Corp Complementary mos type sequence circuit
US4542310A (en) * 1983-06-29 1985-09-17 International Business Machines Corporation CMOS bootstrapped pull up circuit
JPH0777346B2 (ja) * 1988-12-28 1995-08-16 株式会社東芝 論理レベル変換回路
IT1239781B (it) * 1990-05-08 1993-11-15 Texas Instruments Italia Spa Circuito e metodo per commutare selettivamente tensioni negative in circuiti integrati cmos
KR930003929B1 (ko) * 1990-08-09 1993-05-15 삼성전자 주식회사 데이타 출력버퍼
US5128560A (en) * 1991-03-22 1992-07-07 Micron Technology, Inc. Boosted supply output driver circuit for driving an all N-channel output stage
JPH04365372A (ja) * 1991-06-13 1992-12-17 Toshiba Corp 半導体集積回路
JP3055230B2 (ja) * 1991-06-29 2000-06-26 日本電気株式会社 レベルシフタ回路
DE69222144T2 (de) * 1992-03-12 1998-02-05 St Microelectronics Srl Treiber, insbesondere für Leistungs-MOS-Halbbrücken
US5365118A (en) * 1992-06-04 1994-11-15 Linear Technology Corp. Circuit for driving two power mosfets in a half-bridge configuration
JPH0637624A (ja) * 1992-07-13 1994-02-10 Nec Corp レベル変換回路
DE4400872A1 (de) * 1994-01-14 1995-07-20 Philips Patentverwaltung Ausgangstreiberschaltung

Also Published As

Publication number Publication date
EP0703670A3 (de) 1996-09-11
EP0703670A2 (de) 1996-03-27
KR100262233B1 (ko) 2000-07-15
EP0703670B1 (de) 2000-03-08
JPH0897706A (ja) 1996-04-12
KR960012722A (ko) 1996-04-20
US5646571A (en) 1997-07-08
DE69515407D1 (de) 2000-04-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP

8339 Ceased/non-payment of the annual fee