DE69512700T2 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE69512700T2
DE69512700T2 DE69512700T DE69512700T DE69512700T2 DE 69512700 T2 DE69512700 T2 DE 69512700T2 DE 69512700 T DE69512700 T DE 69512700T DE 69512700 T DE69512700 T DE 69512700T DE 69512700 T2 DE69512700 T2 DE 69512700T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69512700T
Other languages
English (en)
Other versions
DE69512700D1 (de
Inventor
Shinji Miyano
Katsuhiko Sato
Tomoaki Yabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69512700D1 publication Critical patent/DE69512700D1/de
Application granted granted Critical
Publication of DE69512700T2 publication Critical patent/DE69512700T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69512700T 1994-04-13 1995-04-12 Halbleiterspeicheranordnung Expired - Lifetime DE69512700T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6074549A JP3048498B2 (ja) 1994-04-13 1994-04-13 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69512700D1 DE69512700D1 (de) 1999-11-18
DE69512700T2 true DE69512700T2 (de) 2000-03-09

Family

ID=13550448

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69512700T Expired - Lifetime DE69512700T2 (de) 1994-04-13 1995-04-12 Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US5590084A (de)
EP (1) EP0678872B1 (de)
JP (1) JP3048498B2 (de)
KR (1) KR0159465B1 (de)
CN (1) CN1041250C (de)
DE (1) DE69512700T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW348266B (en) 1996-03-11 1998-12-21 Toshiba Co Ltd Semiconductor memory device
JPH10162568A (ja) * 1996-12-02 1998-06-19 Toshiba Corp 半導体記憶装置
KR100597620B1 (ko) * 1999-08-18 2006-07-06 삼성전자주식회사 반도체 메모리 장치의 어드레스 디코딩 회로
JP2001338492A (ja) * 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 半導体装置と制御方法
WO2007143278A2 (en) 2006-04-12 2007-12-13 Soft Machines, Inc. Apparatus and method for processing an instruction matrix specifying parallel and dependent operations
CN101627365B (zh) 2006-11-14 2017-03-29 索夫特机械公司 多线程架构
WO2012037491A2 (en) 2010-09-17 2012-03-22 Soft Machines, Inc. Single cycle multi-branch prediction including shadow cache for early far branch prediction
EP2689327B1 (de) 2011-03-25 2021-07-28 Intel Corporation Ausführung von befehlsfolgen-codeblocks mittels durch partitionierbare engines realisierter virtueller kerne
CN103635875B (zh) 2011-03-25 2018-02-16 英特尔公司 用于通过使用由可分区引擎实例化的虚拟核来支持代码块执行的存储器片段
WO2012162189A1 (en) 2011-05-20 2012-11-29 Soft Machines, Inc. An interconnect structure to support the execution of instruction sequences by a plurality of engines
TWI666551B (zh) 2011-05-20 2019-07-21 美商英特爾股份有限公司 以複數個引擎作資源與互連結構的分散式分配以支援指令序列的執行
EP2783280B1 (de) 2011-11-22 2019-09-11 Intel Corporation Beschleunigter codeoptimierer für einen mehrmotor-mikroprozessor
CN104040491B (zh) 2011-11-22 2018-06-12 英特尔公司 微处理器加速的代码优化器
KR102083390B1 (ko) 2013-03-15 2020-03-02 인텔 코포레이션 네이티브 분산된 플래그 아키텍처를 이용하여 게스트 중앙 플래그 아키텍처를 에뮬레이션하는 방법
US9904625B2 (en) 2013-03-15 2018-02-27 Intel Corporation Methods, systems and apparatus for predicting the way of a set associative cache
WO2014150806A1 (en) 2013-03-15 2014-09-25 Soft Machines, Inc. A method for populating register view data structure by using register template snapshots
US9886279B2 (en) 2013-03-15 2018-02-06 Intel Corporation Method for populating and instruction view data structure by using register template snapshots
KR101708591B1 (ko) 2013-03-15 2017-02-20 소프트 머신즈, 인크. 블록들로 그룹화된 멀티스레드 명령어들을 실행하기 위한 방법
US9891924B2 (en) 2013-03-15 2018-02-13 Intel Corporation Method for implementing a reduced size register view data structure in a microprocessor
US9569216B2 (en) 2013-03-15 2017-02-14 Soft Machines, Inc. Method for populating a source view data structure by using register template snapshots
US9811342B2 (en) 2013-03-15 2017-11-07 Intel Corporation Method for performing dual dispatch of blocks and half blocks
US10275255B2 (en) 2013-03-15 2019-04-30 Intel Corporation Method for dependency broadcasting through a source organized source view data structure
US10140138B2 (en) 2013-03-15 2018-11-27 Intel Corporation Methods, systems and apparatus for supporting wide and efficient front-end operation with guest-architecture emulation
WO2014150991A1 (en) 2013-03-15 2014-09-25 Soft Machines, Inc. A method for implementing a reduced size register view data structure in a microprocessor
JP6490840B1 (ja) * 2018-01-05 2019-03-27 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． メモリデバイス
US10878934B2 (en) * 2018-07-16 2020-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and electronic device
US11081149B1 (en) * 2020-03-31 2021-08-03 Winbond Electronics Corp. Memory device for artificial intelligence operation
CN111863071B (zh) * 2020-07-22 2022-12-06 上海高性能集成电路设计中心 一种基于sram实现存内运算的电路结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6381688A (ja) * 1986-09-26 1988-04-12 Hitachi Ltd 半導体記憶装置
JPS6419583A (en) * 1987-07-15 1989-01-23 Hitachi Ltd Semiconductor memory
JPH01303695A (ja) * 1988-06-01 1989-12-07 Nec Corp 半導体記憶装置
JPH0814985B2 (ja) * 1989-06-06 1996-02-14 富士通株式会社 半導体記憶装置
US5289413A (en) * 1990-06-08 1994-02-22 Kabushiki Kaisha Toshiba Dynamic semiconductor memory device with high-speed serial-accessing column decoder
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로

Also Published As

Publication number Publication date
US5590084A (en) 1996-12-31
JPH07282581A (ja) 1995-10-27
EP0678872B1 (de) 1999-10-13
DE69512700D1 (de) 1999-11-18
JP3048498B2 (ja) 2000-06-05
CN1041250C (zh) 1998-12-16
EP0678872A1 (de) 1995-10-25
KR950030151A (ko) 1995-11-24
CN1120224A (zh) 1996-04-10
KR0159465B1 (ko) 1999-02-01

Similar Documents

Publication Publication Date Title
DE69518343D1 (de) Halbleiterspeicheranordnung
DE69521159D1 (de) Halbleiterspeicheranordnung
DE69422901T2 (de) Halbleiterspeicheranordnung
DE69603632D1 (de) Halbleiter-Speicheranordnung
KR960008845A (ko) 반도체 기억장치
DE69520902T2 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69512700T2 (de) Halbleiterspeicheranordnung
DE69615783D1 (de) Halbleiterspeicheranordnung
KR960012510A (ko) 반도체 메모리 장치
DE69600591T2 (de) Halbleiterspeicheranordnung
DE69520333D1 (de) Halbleiterspeicher
DE69520254D1 (de) Halbleiterspeicher
DE69427443D1 (de) Halbleiterspeicheranordnung
DE69432846D1 (de) Halbleiterspeichereinrichtung
KR960012033A (ko) 반도체 기억장치
DE69427107T2 (de) Halbleiterspeicheranordnung
KR960011703A (ko) 반도체 메모리
DE69521066D1 (de) Halbleiterspeicheranordnung
DE69526834D1 (de) Halbleiterspeicher
KR960012034A (ko) 반도체 메모리
DE69423996D1 (de) Halbleiterspeicheranordnung
KR960011705A (ko) 반도체 메모리 장치
DE69731802D1 (de) Halbleiter-Speicherbauteil
KR960012010A (ko) 반도체 메모리
DE69420195T2 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition