DE69503285D1 - Diamantwafer und Verfahren zur Herstellung eines Diamantwafers - Google Patents
Diamantwafer und Verfahren zur Herstellung eines DiamantwafersInfo
- Publication number
- DE69503285D1 DE69503285D1 DE69503285T DE69503285T DE69503285D1 DE 69503285 D1 DE69503285 D1 DE 69503285D1 DE 69503285 T DE69503285 T DE 69503285T DE 69503285 T DE69503285 T DE 69503285T DE 69503285 D1 DE69503285 D1 DE 69503285D1
- Authority
- DE
- Germany
- Prior art keywords
- diamond wafer
- manufacturing
- diamond
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910003460 diamond Inorganic materials 0.000 title 2
- 239000010432 diamond Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Acoustics & Sound (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9593094 | 1994-04-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69503285D1 true DE69503285D1 (de) | 1998-08-13 |
DE69503285T2 DE69503285T2 (de) | 1998-11-05 |
Family
ID=14150997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69503285T Expired - Lifetime DE69503285T2 (de) | 1994-04-07 | 1995-04-04 | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
Country Status (4)
Country | Link |
---|---|
US (2) | US5776246A (de) |
EP (1) | EP0676485B1 (de) |
KR (1) | KR0163645B1 (de) |
DE (1) | DE69503285T2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69503285T2 (de) * | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
DE69516035T2 (de) | 1994-05-23 | 2000-08-31 | Sumitomo Electric Industries, Ltd. | Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters |
DE69535861D1 (de) * | 1994-06-24 | 2008-11-27 | Sumitomo Electric Industries | Wafer und sein Herstellungsverfahren |
US5880552A (en) * | 1997-05-27 | 1999-03-09 | The United States Of America As Represented By The Secretary Of The Navy | Diamond or diamond like carbon coated chemical sensors and a method of making same |
JP3168961B2 (ja) * | 1997-10-06 | 2001-05-21 | 住友電気工業株式会社 | ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ |
JP3125046B2 (ja) * | 1997-11-21 | 2001-01-15 | 工業技術院長 | ダイヤモンド単結晶薄膜製造方法 |
US6222299B1 (en) * | 1998-02-09 | 2001-04-24 | Lucent Technologies Inc. | Surface acoustic wave devices comprising large-grained diamonds and methods for making |
US6416865B1 (en) | 1998-10-30 | 2002-07-09 | Sumitomo Electric Industries, Ltd. | Hard carbon film and surface acoustic-wave substrate |
KR100352985B1 (ko) * | 1999-04-30 | 2002-09-18 | 한국과학기술연구원 | 균열이 없고 평탄한 다이아몬드막 합성 방법 |
EP1225694A4 (de) * | 1999-10-15 | 2005-08-03 | Seiko Epson Corp | Akusitische oberflächenwellenanordnung |
US6625250B2 (en) * | 1999-12-20 | 2003-09-23 | Agere Systems Inc. | Optical structures and methods for x-ray applications |
WO2001069676A2 (en) * | 2000-03-13 | 2001-09-20 | Sun Microsystems, Inc. | Method and apparatus for bonding substrates |
US6814130B2 (en) | 2000-10-13 | 2004-11-09 | Chien-Min Sung | Methods of making diamond tools using reverse casting of chemical vapor deposition |
US6659161B1 (en) | 2000-10-13 | 2003-12-09 | Chien-Min Sung | Molding process for making diamond tools |
US7132309B2 (en) | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
JP2002338388A (ja) * | 2001-02-15 | 2002-11-27 | Ngk Insulators Ltd | ダイヤモンドコート部材 |
US6770966B2 (en) * | 2001-07-31 | 2004-08-03 | Intel Corporation | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
US6660329B2 (en) * | 2001-09-05 | 2003-12-09 | Kennametal Inc. | Method for making diamond coated cutting tool |
AU2003209209A1 (en) * | 2002-01-25 | 2003-09-02 | Michigan State University | Surface acoustic wave devices based on unpolished nanocrystalline diamond |
JP3762893B2 (ja) * | 2002-02-13 | 2006-04-05 | 株式会社国際電気通信基礎技術研究所 | 反射装置およびその製造方法 |
US6930376B2 (en) * | 2002-02-13 | 2005-08-16 | Atr Advanced Telecommunications Research Institute International | Semiconductor device having a folded layer structure |
US6936497B2 (en) * | 2002-12-24 | 2005-08-30 | Intel Corporation | Method of forming electronic dies wherein each die has a layer of solid diamond |
US6964880B2 (en) * | 2003-06-27 | 2005-11-15 | Intel Corporation | Methods for the control of flatness and electron mobility of diamond coated silicon and structures formed thereby |
US6987028B2 (en) * | 2003-07-24 | 2006-01-17 | Intel Corporation | Method of fabricating a microelectronic die |
JP4233467B2 (ja) * | 2004-02-16 | 2009-03-04 | 株式会社神戸製鋼所 | 紫外線センサ及びその製造方法 |
CN100348774C (zh) * | 2005-06-24 | 2007-11-14 | 天津理工大学 | 适用saw器件的纳米金刚石膜及制备方法 |
US20070232074A1 (en) * | 2006-03-31 | 2007-10-04 | Kramadhati Ravi | Techniques for the synthesis of dense, high-quality diamond films using a dual seeding approach |
US20090017258A1 (en) * | 2007-07-10 | 2009-01-15 | Carlisle John A | Diamond film deposition |
US7846767B1 (en) | 2007-09-06 | 2010-12-07 | Chien-Min Sung | Semiconductor-on-diamond devices and associated methods |
JP5343419B2 (ja) * | 2008-06-27 | 2013-11-13 | 住友電気工業株式会社 | 成膜方法 |
US8691663B2 (en) * | 2009-11-06 | 2014-04-08 | Alliance For Sustainable Energy, Llc | Methods of manipulating stressed epistructures |
EP3054036B1 (de) | 2013-09-30 | 2021-03-03 | Adamant Namiki Precision Jewel Co., Ltd. | Diamantsubstratherstellungsverfahren |
US10373725B2 (en) | 2014-11-06 | 2019-08-06 | Ii-Vi Incorporated | Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof |
DE102015006514B4 (de) * | 2015-05-26 | 2016-12-15 | Condias Gmbh | Verfahren zum Herstellen einer Diamant-Elektrode und Diamant-Elektrode |
US10914800B2 (en) | 2015-07-10 | 2021-02-09 | Stc.Unm | Magnetic resonance spectrometer |
US20180061608A1 (en) * | 2017-09-28 | 2018-03-01 | Oxford Instruments X-ray Technology Inc. | Window member for an x-ray device |
CN112152588B (zh) * | 2020-09-25 | 2024-01-30 | 福建晶安光电有限公司 | 声表面波滤波器及声表面波滤波器用晶片的加工方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE40137C (de) * | p. olivier - LECQ in Templeuve, Nord-Frankreich | Maschine zum Auskörnen von Aehren, Samenkapseln u. dergl | ||
JPH0770456B2 (ja) * | 1986-04-25 | 1995-07-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
US4863529A (en) * | 1987-03-12 | 1989-09-05 | Sumitomo Electric Industries, Ltd. | Thin film single crystal diamond substrate |
JPS63256356A (ja) * | 1987-04-15 | 1988-10-24 | Hitachi Ltd | 研摩方法および装置 |
JPH0779958B2 (ja) * | 1987-05-08 | 1995-08-30 | 住友電気工業株式会社 | 大型ダイヤモンドの合成方法 |
US5270028A (en) * | 1988-02-01 | 1993-12-14 | Sumitomo Electric Industries, Ltd. | Diamond and its preparation by chemical vapor deposition method |
JPH0226900A (ja) * | 1988-07-15 | 1990-01-29 | Tosoh Corp | ダイヤモンド膜の研磨法 |
JPH02173264A (ja) * | 1988-12-26 | 1990-07-04 | Olympus Optical Co Ltd | 高硬度多層膜 |
JPH0355822A (ja) * | 1989-07-25 | 1991-03-11 | Shin Etsu Handotai Co Ltd | 半導体素子形成用基板の製造方法 |
US5273731A (en) * | 1989-09-14 | 1993-12-28 | General Electric Company | Substantially transparent free standing diamond films |
JPH03145900A (ja) * | 1989-11-01 | 1991-06-21 | Yamaha Corp | スピーカー用振動板 |
JP3028660B2 (ja) * | 1991-10-21 | 2000-04-04 | 住友電気工業株式会社 | ダイヤモンドヒートシンクの製造方法 |
JPH04358410A (ja) * | 1991-06-05 | 1992-12-11 | Sumitomo Electric Ind Ltd | 表面弾性波素子及びその製造方法 |
US5240749A (en) * | 1991-08-27 | 1993-08-31 | University Of Central Florida | Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition |
JP3132515B2 (ja) * | 1991-09-26 | 2001-02-05 | 住友電気工業株式会社 | 表面弾性波素子の製造方法 |
US5270077A (en) * | 1991-12-13 | 1993-12-14 | General Electric Company | Method for producing flat CVD diamond film |
JP3121102B2 (ja) * | 1992-03-26 | 2000-12-25 | キヤノン株式会社 | 平板ダイヤモンド結晶、及びその形成方法 |
JP3252865B2 (ja) * | 1992-09-11 | 2002-02-04 | 住友電気工業株式会社 | 表面弾性波素子および表面弾性波素子の製造方法 |
US5382809A (en) * | 1992-09-14 | 1995-01-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device including semiconductor diamond |
JPH06263595A (ja) * | 1993-03-10 | 1994-09-20 | Canon Inc | ダイヤモンド被覆部材及びその製造方法 |
JP3774904B2 (ja) * | 1994-01-27 | 2006-05-17 | 住友電気工業株式会社 | 平坦なダイヤモンド膜の合成法とダイヤモンド自立膜及びダイヤモンド膜の研磨方法 |
DE69503285T2 (de) * | 1994-04-07 | 1998-11-05 | Sumitomo Electric Industries | Diamantwafer und Verfahren zur Herstellung eines Diamantwafers |
DE69516035T2 (de) * | 1994-05-23 | 2000-08-31 | Sumitomo Electric Industries, Ltd. | Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters |
EP0699776B1 (de) * | 1994-06-09 | 1999-03-31 | Sumitomo Electric Industries, Limited | Wafer und Verfahren zur Herstellung eines Wafers |
US5882809A (en) * | 1997-01-02 | 1999-03-16 | U.S. The United States Of America As Represented By The United States Department Of Energy | Solid oxide fuel cell with multi-unit construction and prismatic design |
-
1995
- 1995-04-04 DE DE69503285T patent/DE69503285T2/de not_active Expired - Lifetime
- 1995-04-04 EP EP95302234A patent/EP0676485B1/de not_active Expired - Lifetime
- 1995-04-06 KR KR1019950008254A patent/KR0163645B1/ko not_active IP Right Cessation
- 1995-04-06 US US08/418,116 patent/US5776246A/en not_active Expired - Lifetime
-
1997
- 1997-11-21 US US08/975,254 patent/US6051063A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0676485B1 (de) | 1998-07-08 |
EP0676485A1 (de) | 1995-10-11 |
US6051063A (en) | 2000-04-18 |
DE69503285T2 (de) | 1998-11-05 |
KR0163645B1 (ko) | 1999-02-01 |
US5776246A (en) | 1998-07-07 |
KR950030220A (ko) | 1995-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8364 | No opposition during term of opposition | ||
R082 | Change of representative |
Ref document number: 676485 Country of ref document: EP Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN, DE |