DE69432433D1 - Mikrowellensputtervorrichtung zur herstellung dünner kompositfilme - Google Patents

Mikrowellensputtervorrichtung zur herstellung dünner kompositfilme

Info

Publication number
DE69432433D1
DE69432433D1 DE69432433T DE69432433T DE69432433D1 DE 69432433 D1 DE69432433 D1 DE 69432433D1 DE 69432433 T DE69432433 T DE 69432433T DE 69432433 T DE69432433 T DE 69432433T DE 69432433 D1 DE69432433 D1 DE 69432433D1
Authority
DE
Germany
Prior art keywords
composite films
producing thin
thin composite
sputter device
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432433T
Other languages
English (en)
Inventor
Curtis M Lampkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69432433D1 publication Critical patent/DE69432433D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3432—Target-material dispenser

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE69432433T 1993-12-06 1994-11-30 Mikrowellensputtervorrichtung zur herstellung dünner kompositfilme Expired - Lifetime DE69432433D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/162,592 US5405517A (en) 1993-12-06 1993-12-06 Magnetron sputtering method and apparatus for compound thin films
PCT/US1994/013117 WO1995016058A1 (en) 1993-12-06 1994-11-30 Magnetron sputtering apparatus for compound thin films

Publications (1)

Publication Number Publication Date
DE69432433D1 true DE69432433D1 (de) 2003-05-08

Family

ID=22586307

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432433T Expired - Lifetime DE69432433D1 (de) 1993-12-06 1994-11-30 Mikrowellensputtervorrichtung zur herstellung dünner kompositfilme

Country Status (4)

Country Link
US (1) US5405517A (de)
EP (1) EP0740710B1 (de)
DE (1) DE69432433D1 (de)
WO (1) WO1995016058A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4418906B4 (de) * 1994-05-31 2004-03-25 Unaxis Deutschland Holding Gmbh Verfahren zum Beschichten eines Substrates und Beschichtungsanlage zu seiner Durchführung
WO1999005338A2 (en) 1997-07-24 1999-02-04 Toyo Tanso Usa, Inc. Surface converted graphite components and methods of making same
US6113751A (en) * 1998-08-06 2000-09-05 Lockheed Martin Corporation Electromagnetic beam assisted deposition method for depositing a material on an irradiated substrate
WO2002084702A2 (en) * 2001-01-16 2002-10-24 Lampkin Curtis M Sputtering deposition apparatus and method for depositing surface films
DE10359508B4 (de) * 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Magnetronsputtern
JP2008505842A (ja) 2004-07-12 2008-02-28 日本板硝子株式会社 低保守コーティング
US20060070869A1 (en) * 2004-10-04 2006-04-06 Krisko Annette J Thin film coating and temporary protection technology, insulating glazing units, and associated methods
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US20070074970A1 (en) * 2005-09-20 2007-04-05 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US7842355B2 (en) 2005-11-01 2010-11-30 Applied Materials, Inc. System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
US20080276860A1 (en) * 2007-05-10 2008-11-13 Burrows Brian H Cross flow apparatus and method for hydride vapor phase deposition
WO2008153690A1 (en) * 2007-05-22 2008-12-18 Miasole High rate sputtering apparatus and method
US20080289575A1 (en) * 2007-05-24 2008-11-27 Burrows Brian H Methods and apparatus for depositing a group iii-v film using a hydride vapor phase epitaxy process
WO2009036263A2 (en) * 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coating technology
DE102009015737B4 (de) * 2009-03-31 2013-12-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Magnetron-Beschichtungsmodul sowie Magnetron-Beschichtungsverfahren
JP5648349B2 (ja) * 2009-09-17 2015-01-07 東京エレクトロン株式会社 成膜装置
US20120067717A1 (en) * 2010-09-17 2012-03-22 Guardian Industries Corp. Method of co-sputtering alloys and compounds using a dual C-MAG cathode arrangement and corresponding apparatus
WO2013023173A2 (en) * 2011-08-11 2013-02-14 NuvoSun, Inc. Sputtering systems for liquid target materials
US20130108789A1 (en) * 2011-10-31 2013-05-02 General Electric Company Method for deposition
US10604442B2 (en) 2016-11-17 2020-03-31 Cardinal Cg Company Static-dissipative coating technology
CN108359937B (zh) * 2018-02-27 2023-08-22 温州驰诚真空机械有限公司 转换式物理气相沉积粒子源

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US4465575A (en) * 1981-09-21 1984-08-14 Atlantic Richfield Company Method for forming photovoltaic cells employing multinary semiconductor films
US4443318A (en) * 1983-08-17 1984-04-17 Shatterproof Glass Corporation Cathodic sputtering apparatus
US4466877A (en) * 1983-10-11 1984-08-21 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
JP2613201B2 (ja) * 1987-01-23 1997-05-21 株式会社日立製作所 スパツタリング方法
JPH0772349B2 (ja) * 1987-05-12 1995-08-02 住友電気工業株式会社 大面積化合物薄膜の作製方法および装置
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
BE1003701A3 (fr) * 1990-06-08 1992-05-26 Saint Roch Glaceries Cathode rotative.
JPH04210470A (ja) * 1990-11-30 1992-07-31 Mitsubishi Materials Corp スパタリングターゲットの製造方法
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
US5211824A (en) * 1991-10-31 1993-05-18 Siemens Solar Industries L.P. Method and apparatus for sputtering of a liquid

Also Published As

Publication number Publication date
WO1995016058A1 (en) 1995-06-15
US5405517A (en) 1995-04-11
EP0740710A4 (de) 1998-07-01
EP0740710A1 (de) 1996-11-06
EP0740710B1 (de) 2003-04-02

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8332 No legal effect for de