DE69429794D1 - Nichtflüchtige Halbleiterspeicher - Google Patents

Nichtflüchtige Halbleiterspeicher

Info

Publication number
DE69429794D1
DE69429794D1 DE69429794T DE69429794T DE69429794D1 DE 69429794 D1 DE69429794 D1 DE 69429794D1 DE 69429794 T DE69429794 T DE 69429794T DE 69429794 T DE69429794 T DE 69429794T DE 69429794 D1 DE69429794 D1 DE 69429794D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69429794T
Other languages
English (en)
Inventor
Hiromi Nobukata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69429794D1 publication Critical patent/DE69429794D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3486—Circuits or methods to prevent overprogramming of nonvolatile memory cells, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
DE69429794T 1993-08-11 1994-08-11 Nichtflüchtige Halbleiterspeicher Expired - Lifetime DE69429794D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5199798A JPH0757484A (ja) 1993-08-11 1993-08-11 Ｎｏｒ型不揮発性メモリ制御回路

Publications (1)

Publication Number Publication Date
DE69429794D1 true DE69429794D1 (de) 2002-03-21

Family

ID=16413804

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69429794T Expired - Lifetime DE69429794D1 (de) 1993-08-11 1994-08-11 Nichtflüchtige Halbleiterspeicher

Country Status (5)

Country Link
US (1) US5521868A (de)
EP (1) EP0638906B1 (de)
JP (1) JPH0757484A (de)
KR (1) KR950006870A (de)
DE (1) DE69429794D1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100566464B1 (ko) 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
JPH0917196A (ja) * 1995-06-30 1997-01-17 Nec Corp テストモード設定回路
KR100193898B1 (ko) * 1996-06-29 1999-06-15 김영환 플래쉬 메모리 장치
JPH10222994A (ja) * 1997-02-06 1998-08-21 Mitsubishi Electric Corp 半導体記憶装置の読み出し電圧制御装置
JPH11214640A (ja) 1998-01-28 1999-08-06 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
JP3359615B2 (ja) * 1999-04-23 2002-12-24 松下電器産業株式会社 不揮発性半導体記憶装置
US6188608B1 (en) 1999-04-23 2001-02-13 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device
JP2004343128A (ja) * 2004-06-01 2004-12-02 Hitachi Ltd 半導体記憶素子、半導体記憶装置とその制御方法
US20090296506A1 (en) * 2008-05-28 2009-12-03 Macronix International Co., Ltd. Sense amplifier and data sensing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5053990A (en) * 1988-02-17 1991-10-01 Intel Corporation Program/erase selection for flash memory
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US5138576A (en) * 1991-11-06 1992-08-11 Altera Corporation Method and apparatus for erasing an array of electrically erasable EPROM cells
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same

Also Published As

Publication number Publication date
EP0638906A2 (de) 1995-02-15
KR950006870A (ko) 1995-03-21
EP0638906A3 (de) 1995-04-19
JPH0757484A (ja) 1995-03-03
US5521868A (en) 1996-05-28
EP0638906B1 (de) 2002-02-06

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Legal Events

Date Code Title Description
8332 No legal effect for de