DE69428578T2 - Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen - Google Patents

Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen

Info

Publication number
DE69428578T2
DE69428578T2 DE69428578T DE69428578T DE69428578T2 DE 69428578 T2 DE69428578 T2 DE 69428578T2 DE 69428578 T DE69428578 T DE 69428578T DE 69428578 T DE69428578 T DE 69428578T DE 69428578 T2 DE69428578 T2 DE 69428578T2
Authority
DE
Germany
Prior art keywords
manufacturing
light emitting
semiconductor light
emitting devices
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69428578T
Other languages
English (en)
Other versions
DE69428578D1 (de
Inventor
Takehisa Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5316606A external-priority patent/JPH07170024A/ja
Priority claimed from JP06126103A external-priority patent/JP3074112B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69428578D1 publication Critical patent/DE69428578D1/de
Publication of DE69428578T2 publication Critical patent/DE69428578T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/22—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device liquid at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02232—Liquid-filled housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
DE69428578T 1993-12-16 1994-12-16 Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen Expired - Fee Related DE69428578T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5316606A JPH07170024A (ja) 1993-12-16 1993-12-16 半導体装置
JP06126103A JP3074112B2 (ja) 1994-06-08 1994-06-08 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69428578D1 DE69428578D1 (de) 2001-11-15
DE69428578T2 true DE69428578T2 (de) 2002-06-27

Family

ID=26462333

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69428578T Expired - Fee Related DE69428578T2 (de) 1993-12-16 1994-12-16 Herstellungsverfahren für lichtemittierenden Halbleitervorrichtungen

Country Status (2)

Country Link
EP (1) EP0658933B1 (de)
DE (1) DE69428578T2 (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841768B2 (en) 2012-07-23 2014-09-23 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
DE102018129575A1 (de) * 2018-11-23 2020-05-28 Osram Opto Semiconductors Gmbh Lichtemittereinheit mit wenigstens einem VCSEL-Chip
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19803936A1 (de) * 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
US6639360B2 (en) * 2001-01-31 2003-10-28 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US7075112B2 (en) 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
JP2002314139A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
GB2389706A (en) * 2002-06-13 2003-12-17 Enfis Ltd Optoelectronic devices
US20040264192A1 (en) * 2003-05-06 2004-12-30 Seiko Epson Corporation Light source apparatus, method of manufacture therefor, and projection-type display apparatus
US7405433B2 (en) 2005-02-22 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Semiconductor light emitting device
DE102005050947A1 (de) 2005-10-22 2007-04-26 Noctron S.A.R.L. Leuchtelement mit wenigstens einem Leucht-Chip-Kristall
DE102006049081B4 (de) * 2006-10-13 2012-06-14 Noctron Soparfi S.A. Halbleiter-Leuchtmittel und Leuchtpaneel mit solchen
US8193702B2 (en) 2006-05-02 2012-06-05 Switch Bulb Company, Inc. Method of light dispersion and preferential scattering of certain wavelengths of light-emitting diodes and bulbs constructed therefrom
CA2645231A1 (en) 2006-05-02 2007-11-15 Superbulbs, Inc. Heat removal design for led bulbs
EA200870494A1 (ru) 2006-05-02 2009-06-30 Супербалбс, Инк. Пластмассовая светодиодная лампа
US8450927B2 (en) 2007-09-14 2013-05-28 Switch Bulb Company, Inc. Phosphor-containing LED light bulb
WO2009045438A1 (en) 2007-10-03 2009-04-09 Superbulbs, Inc. Glass led light bulbs
JP2011501464A (ja) 2007-10-24 2011-01-06 テオス・インコーポレイテッド Ｌｅｄ光源用拡散器
US8471445B2 (en) 2008-08-18 2013-06-25 Switch Bulb Company, Inc. Anti-reflective coatings for light bulbs
US9107273B2 (en) 2008-09-11 2015-08-11 Switch Bulb Company, Inc. End-of-life bulb circuitry
DE102010046090A1 (de) 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Halbleiterbauelement und Halbleiterbauelement
DE102010046088A1 (de) 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Gehäuse und Verfahren zum Herstellen eines Gehäuses
US8226274B2 (en) 2011-03-01 2012-07-24 Switch Bulb Company, Inc. Liquid displacer in LED bulbs
DE102011081417A1 (de) * 2011-08-23 2012-09-20 Siemens Ag Optoelektronisches Bauelement
US8591069B2 (en) 2011-09-21 2013-11-26 Switch Bulb Company, Inc. LED light bulb with controlled color distribution using quantum dots
CN104300356A (zh) * 2014-10-29 2015-01-21 山东华光光电子有限公司 一种波长稳定的半导体激光器及其制作方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS609663B2 (ja) * 1979-04-23 1985-03-12 松下電器産業株式会社 発光ダイオ−ドの外装部形成法
JPS57133652A (en) * 1981-02-12 1982-08-18 Hitachi Ltd Semiconductor device
JPS58186980A (ja) * 1982-04-26 1983-11-01 Nec Corp 光半導体装置
JPS6083337A (ja) * 1983-10-14 1985-05-11 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS62206859A (ja) * 1986-03-06 1987-09-11 Mitsubishi Electric Corp 半導体装置
JPH01179483A (ja) * 1988-01-08 1989-07-17 Canon Inc 半導体レーザー装置
WO1991003085A1 (en) * 1989-08-21 1991-03-07 Cray Research, Inc. Improved laser diode package
NO911774D0 (no) * 1991-05-06 1991-05-06 Sensonor As Anordning ved innkapsling av et funksjonsorgan, samt fremgangsmaate for fremstilling av samme.

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841768B2 (en) 2012-07-23 2014-09-23 Infineon Technologies Ag Chip package and a method for manufacturing a chip package
DE102018129575A1 (de) * 2018-11-23 2020-05-28 Osram Opto Semiconductors Gmbh Lichtemittereinheit mit wenigstens einem VCSEL-Chip
DE102019100794A1 (de) * 2018-12-20 2020-06-25 Osram Opto Semiconductors Gmbh Laservorrichtung und verfahren zur herstellung einer laservorrichtung

Also Published As

Publication number Publication date
DE69428578D1 (de) 2001-11-15
EP0658933A3 (de) 1995-12-13
EP0658933A2 (de) 1995-06-21
EP0658933B1 (de) 2001-10-10

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