DE69425582D1 - Durch topologie hervorgerufene erhöhung der plasmadichte zur verbesserten homogenität beim ätzen - Google Patents

Durch topologie hervorgerufene erhöhung der plasmadichte zur verbesserten homogenität beim ätzen

Info

Publication number
DE69425582D1
DE69425582D1 DE69425582T DE69425582T DE69425582D1 DE 69425582 D1 DE69425582 D1 DE 69425582D1 DE 69425582 T DE69425582 T DE 69425582T DE 69425582 T DE69425582 T DE 69425582T DE 69425582 D1 DE69425582 D1 DE 69425582D1
Authority
DE
Germany
Prior art keywords
topology
increase
plasma density
density caused
improve etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69425582T
Other languages
English (en)
Other versions
DE69425582T2 (de
Inventor
S Mundt
R Kerr
Howard Lenz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE69425582D1 publication Critical patent/DE69425582D1/de
Publication of DE69425582T2 publication Critical patent/DE69425582T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69425582T 1993-11-17 1994-11-17 Durch topologie hervorgerufene erhöhung der plasmadichte zur verbesserten homogenität beim ätzen Expired - Fee Related DE69425582T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/153,084 US5472565A (en) 1993-11-17 1993-11-17 Topology induced plasma enhancement for etched uniformity improvement
PCT/US1994/013228 WO1995013927A1 (en) 1993-11-17 1994-11-17 Topology induced plasma enhancement for etched uniformity improvement

Publications (2)

Publication Number Publication Date
DE69425582D1 true DE69425582D1 (de) 2000-09-21
DE69425582T2 DE69425582T2 (de) 2001-05-23

Family

ID=22545711

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69425582T Expired - Fee Related DE69425582T2 (de) 1993-11-17 1994-11-17 Durch topologie hervorgerufene erhöhung der plasmadichte zur verbesserten homogenität beim ätzen

Country Status (8)

Country Link
US (2) US5472565A (de)
EP (1) EP0730532B1 (de)
JP (1) JPH09505690A (de)
KR (1) KR100352770B1 (de)
AT (1) ATE195462T1 (de)
DE (1) DE69425582T2 (de)
ES (1) ES2148471T3 (de)
WO (1) WO1995013927A1 (de)

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US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement
JP3454333B2 (ja) * 1996-04-22 2003-10-06 日清紡績株式会社 プラズマエッチング電極
KR100246858B1 (ko) * 1997-05-07 2000-03-15 윤종용 건식 식각 장치
US6024799A (en) * 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6892669B2 (en) * 1998-02-26 2005-05-17 Anelva Corporation CVD apparatus
US6050216A (en) * 1998-08-21 2000-04-18 M.E.C. Technology, Inc. Showerhead electrode for plasma processing
US6415736B1 (en) 1999-06-30 2002-07-09 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6528947B1 (en) 1999-12-06 2003-03-04 E. I. Du Pont De Nemours And Company Hollow cathode array for plasma generation
US6170432B1 (en) 2000-01-24 2001-01-09 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6237528B1 (en) 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
KR100419756B1 (ko) * 2000-06-23 2004-02-21 아넬바 가부시기가이샤 박막 형성 장치
US6391787B1 (en) * 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
WO2003100817A1 (en) 2002-05-23 2003-12-04 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
US20050011447A1 (en) * 2003-07-14 2005-01-20 Tokyo Electron Limited Method and apparatus for delivering process gas to a process chamber
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
US20070221128A1 (en) * 2006-03-23 2007-09-27 Soo Young Choi Method and apparatus for improving uniformity of large-area substrates
US8409459B2 (en) * 2008-02-28 2013-04-02 Tokyo Electron Limited Hollow cathode device and method for using the device to control the uniformity of a plasma process
JP5348919B2 (ja) * 2008-03-27 2013-11-20 東京エレクトロン株式会社 電極構造及び基板処理装置
US8161906B2 (en) * 2008-07-07 2012-04-24 Lam Research Corporation Clamped showerhead electrode assembly
KR101046335B1 (ko) * 2008-07-29 2011-07-05 피에스케이 주식회사 할로우 캐소드 플라즈마 발생방법 및 할로우 캐소드플라즈마를 이용한 대면적 기판 처리방법
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
TWI385272B (zh) * 2009-09-25 2013-02-11 Ind Tech Res Inst 氣體分佈板及其裝置
JP6255647B2 (ja) * 2013-07-25 2018-01-10 株式会社ユーテック 結晶膜、結晶膜の製造方法、蒸着装置及びマルチチャンバー装置
US9406535B2 (en) * 2014-08-29 2016-08-02 Lam Research Corporation Ion injector and lens system for ion beam milling
US10825652B2 (en) 2014-08-29 2020-11-03 Lam Research Corporation Ion beam etch without need for wafer tilt or rotation
US9779955B2 (en) 2016-02-25 2017-10-03 Lam Research Corporation Ion beam etching utilizing cryogenic wafer temperatures
CN112951696B (zh) * 2019-12-10 2024-04-09 中微半导体设备(上海)股份有限公司 等离子体处理设备及其气体挡板结构、等离子体处理方法

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JPS58157975A (ja) * 1982-03-10 1983-09-20 Tokyo Ohka Kogyo Co Ltd プラズマエツチング方法
JPS61104625A (ja) * 1984-10-29 1986-05-22 Hitachi Ltd プラズマ処理装置
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
KR900001825B1 (ko) * 1984-11-14 1990-03-24 가부시끼가이샤 히다찌세이사꾸쇼 성막 지향성을 고려한 스퍼터링장치
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
US4960488A (en) * 1986-12-19 1990-10-02 Applied Materials, Inc. Reactor chamber self-cleaning process
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
US4820371A (en) * 1987-12-15 1989-04-11 Texas Instruments Incorporated Apertured ring for exhausting plasma reactor gases
US4792378A (en) * 1987-12-15 1988-12-20 Texas Instruments Incorporated Gas dispersion disk for use in plasma enhanced chemical vapor deposition reactor
US5472565A (en) * 1993-11-17 1995-12-05 Lam Research Corporation Topology induced plasma enhancement for etched uniformity improvement

Also Published As

Publication number Publication date
WO1995013927A1 (en) 1995-05-26
EP0730532B1 (de) 2000-08-16
ATE195462T1 (de) 2000-09-15
US5714031A (en) 1998-02-03
KR100352770B1 (ko) 2003-02-05
ES2148471T3 (es) 2000-10-16
DE69425582T2 (de) 2001-05-23
US5472565A (en) 1995-12-05
EP0730532A4 (de) 1997-01-02
KR960705692A (ko) 1996-11-08
EP0730532A1 (de) 1996-09-11
JPH09505690A (ja) 1997-06-03

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee