DE69419451D1 - Farbanzeige / Farbdetektor - Google Patents
Farbanzeige / FarbdetektorInfo
- Publication number
- DE69419451D1 DE69419451D1 DE69419451T DE69419451T DE69419451D1 DE 69419451 D1 DE69419451 D1 DE 69419451D1 DE 69419451 T DE69419451 T DE 69419451T DE 69419451 T DE69419451 T DE 69419451T DE 69419451 D1 DE69419451 D1 DE 69419451D1
- Authority
- DE
- Germany
- Prior art keywords
- color
- detector
- display
- color display
- color detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
- H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9308300A GB2277405A (en) | 1993-04-22 | 1993-04-22 | Semiconductor colour display or detector array |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69419451D1 true DE69419451D1 (de) | 1999-08-19 |
DE69419451T2 DE69419451T2 (de) | 1999-12-09 |
Family
ID=10734260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69419451T Expired - Fee Related DE69419451T2 (de) | 1993-04-22 | 1994-04-21 | Farbanzeige / Farbdetektor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5583351A (de) |
EP (1) | EP0621646B1 (de) |
JP (1) | JPH077223A (de) |
DE (1) | DE69419451T2 (de) |
GB (1) | GB2277405A (de) |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0856018A (ja) * | 1994-08-11 | 1996-02-27 | Rohm Co Ltd | 半導体発光素子、および半導体発光素子の製造方法 |
US6218677B1 (en) * | 1994-08-15 | 2001-04-17 | Texas Instruments Incorporated | III-V nitride resonant tunneling |
FR2726126A1 (fr) * | 1994-10-24 | 1996-04-26 | Mitsubishi Electric Corp | Procede de fabrication de dispositifs a diodes electroluminescentes a lumiere visible |
JP3680337B2 (ja) * | 1995-02-14 | 2005-08-10 | 昭和電工株式会社 | 発光ダイオード |
US5707139A (en) * | 1995-11-01 | 1998-01-13 | Hewlett-Packard Company | Vertical cavity surface emitting laser arrays for illumination |
US7385574B1 (en) * | 1995-12-29 | 2008-06-10 | Cree, Inc. | True color flat panel display module |
JP3814880B2 (ja) * | 1996-08-05 | 2006-08-30 | 富士ゼロックス株式会社 | 半導体装置およびその製造方法 |
JP4097232B2 (ja) | 1996-09-05 | 2008-06-11 | 株式会社リコー | 半導体レーザ素子 |
US6072196A (en) * | 1996-09-05 | 2000-06-06 | Ricoh Company, Ltd. | semiconductor light emitting devices |
US5976957A (en) * | 1996-10-28 | 1999-11-02 | Sony Corporation | Method of making silicon quantum wires on a substrate |
US5835521A (en) * | 1997-02-10 | 1998-11-10 | Motorola, Inc. | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
JPH10319871A (ja) * | 1997-05-19 | 1998-12-04 | Kouha:Kk | Ledディスプレイ装置 |
US6825501B2 (en) * | 1997-08-29 | 2004-11-30 | Cree, Inc. | Robust Group III light emitting diode for high reliability in standard packaging applications |
ATE279789T1 (de) * | 1997-08-29 | 2004-10-15 | Cree Inc | Robuste lichtemittierende diode aus einer nitridverbindung von elementen der gruppe iii für hohe zuverlässigkeit in standardpackungen |
DE69917388T2 (de) * | 1998-02-18 | 2005-05-25 | Seiko Epson Corp. | Verfahren zur herstellung eines vielschichtspiegels mit verteilter reflektion |
US6888175B1 (en) | 1998-05-29 | 2005-05-03 | Massachusetts Institute Of Technology | Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers |
WO2000007221A2 (en) * | 1998-07-31 | 2000-02-10 | Emory University | Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
US6120909A (en) * | 1998-08-19 | 2000-09-19 | International Business Machines Corporation | Monolithic silicon-based nitride display device |
US6958865B1 (en) * | 1998-11-12 | 2005-10-25 | California Institute Of Technology | Microlicensing particles and applications |
US6603784B1 (en) | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
US7286585B2 (en) | 1998-12-21 | 2007-10-23 | Finisar Corporation | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
US6975660B2 (en) * | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
US20030219917A1 (en) | 1998-12-21 | 2003-11-27 | Johnson Ralph H. | System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers |
US7257143B2 (en) * | 1998-12-21 | 2007-08-14 | Finisar Corporation | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
US7435660B2 (en) * | 1998-12-21 | 2008-10-14 | Finisar Corporation | Migration enhanced epitaxy fabrication of active regions having quantum wells |
US7167495B2 (en) * | 1998-12-21 | 2007-01-23 | Finisar Corporation | Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers |
DE19911717A1 (de) * | 1999-03-16 | 2000-09-28 | Osram Opto Semiconductors Gmbh | Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung |
US6176925B1 (en) * | 1999-05-07 | 2001-01-23 | Cbl Technologies, Inc. | Detached and inverted epitaxial regrowth & methods |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
DE19943405B4 (de) * | 1999-09-10 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines lateral monolithisch integrierten Lichtemissions-Halbleiterbauelements und Lichtemissions-Halbleiterbauelement |
WO2001052373A2 (de) | 2000-01-13 | 2001-07-19 | Infineon Technologies Ag | Halbleiterlaserstruktur |
JP2001339121A (ja) * | 2000-05-29 | 2001-12-07 | Sharp Corp | 窒化物半導体発光素子とそれを含む光学装置 |
US6410940B1 (en) * | 2000-06-15 | 2002-06-25 | Kansas State University Research Foundation | Micro-size LED and detector arrays for minidisplay, hyper-bright light emitting diodes, lighting, and UV detector and imaging sensor applications |
US6301055B1 (en) * | 2000-08-16 | 2001-10-09 | California Institute Of Technology | Solid immersion lens structures and methods for producing solid immersion lens structures |
US6498113B1 (en) | 2001-06-04 | 2002-12-24 | Cbl Technologies, Inc. | Free standing substrates by laser-induced decoherency and regrowth |
TW522534B (en) * | 2001-09-11 | 2003-03-01 | Hsiu-Hen Chang | Light source of full color LED using die bonding and packaging technology |
KR100446622B1 (ko) * | 2002-01-10 | 2004-09-04 | 삼성전자주식회사 | 실리콘 광소자 및 이를 적용한 발광 디바이스 장치 |
KR100940530B1 (ko) * | 2003-01-17 | 2010-02-10 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
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US6972516B2 (en) * | 2002-06-14 | 2005-12-06 | University Of Cincinnati | Photopump-enhanced electroluminescent devices |
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US7042649B2 (en) * | 2003-08-11 | 2006-05-09 | California Institute Of Technology | Microfabricated rubber microscope using soft solid immersion lenses |
DE10345410A1 (de) * | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
US7576365B2 (en) | 2004-03-12 | 2009-08-18 | Showa Denko K.K. | Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
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CN102136502B (zh) * | 2004-03-31 | 2014-10-22 | 奥斯兰姆奥普托半导体有限责任公司 | 辐射探测器 |
EP2933630A3 (de) | 2004-06-07 | 2015-10-28 | Fluidigm Corporation | Optisches linsensystem und verfahren für mikrofluidische vorrichtungen |
CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
KR100612875B1 (ko) * | 2004-11-24 | 2006-08-14 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
KR20060059327A (ko) * | 2004-11-27 | 2006-06-01 | 삼성전자주식회사 | 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치 |
WO2006079333A2 (de) * | 2005-01-26 | 2006-08-03 | Philipps Universität Marburg | Iii/v-halbleiter |
KR100672994B1 (ko) * | 2005-01-28 | 2007-01-24 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
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TWI344314B (en) * | 2005-10-14 | 2011-06-21 | Hon Hai Prec Ind Co Ltd | Light-emitting element, plane light source and direct-type backlight module |
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US8101961B2 (en) * | 2006-01-25 | 2012-01-24 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with growth substrates |
US7899093B1 (en) | 2007-05-24 | 2011-03-01 | University Of Central Florida Research Foundation, Inc. | Combination of up-converting materials with semiconductor light sources |
US8866007B2 (en) * | 2006-06-07 | 2014-10-21 | California Institute Of Technology | Plasmonic photovoltaics |
US7875370B2 (en) | 2006-08-18 | 2011-01-25 | United Technologies Corporation | Thermal barrier coating with a plasma spray top layer |
US20080191604A1 (en) * | 2006-09-27 | 2008-08-14 | Evident Technologies | Retro-emission systems comprising microlens arrays and luminescent emitters |
CA2668654A1 (en) * | 2006-11-21 | 2008-05-29 | Onechip Photonics Inc. | Integrated optics arrangement for wavelength (de)multiplexing in a multi-guide vertical stack |
DE102007012115A1 (de) | 2006-11-30 | 2008-06-05 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
US8681743B2 (en) * | 2006-12-08 | 2014-03-25 | Samsung Electronics Co., Ltd. | Apparatus and method for selecting frame structure in multihop relay broadband wireless access communication system |
JP2010517274A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
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US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
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-
1993
- 1993-04-22 GB GB9308300A patent/GB2277405A/en not_active Withdrawn
-
1994
- 1994-04-21 US US08/230,909 patent/US5583351A/en not_active Expired - Fee Related
- 1994-04-21 DE DE69419451T patent/DE69419451T2/de not_active Expired - Fee Related
- 1994-04-21 EP EP94302856A patent/EP0621646B1/de not_active Expired - Lifetime
- 1994-04-21 JP JP6083512A patent/JPH077223A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0621646A2 (de) | 1994-10-26 |
JPH077223A (ja) | 1995-01-10 |
US5583351A (en) | 1996-12-10 |
EP0621646B1 (de) | 1999-07-14 |
EP0621646A3 (en) | 1994-11-23 |
GB9308300D0 (en) | 1993-06-09 |
DE69419451T2 (de) | 1999-12-09 |
GB2277405A (en) | 1994-10-26 |
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